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31. 发明授权

US09234746B2 Inspection method and inspection apparatus of winding state of sheet member 有权
标题翻译：片材卷绕状态的检查方法和检查装置
公开(公告)号：US09234746B2
公开(公告)日：2016-01-12
申请号：US13532000
申请日：2012-06-25
申请人： Hiroki Inoue , Kazuhiro Kobayashi , Nobuhiro Tani , Toshihide Suzuki
发明人： Hiroki Inoue , Kazuhiro Kobayashi , Nobuhiro Tani , Toshihide Suzuki
IPC分类号： G01N21/86 , G01B11/24 , B29D30/30 , G01B11/02
CPC分类号： G01B11/24 , B29D30/3007 , B29D2030/3064 , G01B11/026
摘要： Laser light is emitted to a sheet member wound on a forming drum in a range which includes the entire width of the sheet member and distance data on a distance to a reflecting surface is obtained, using a two-dimensional laser sensor which has a detection range along a drum circumferential direction, while moving either the two-dimensional laser sensor or the forming drum in a drum width direction. Further, the positions of width-directional opposite end sections of the sheet member are calculated on the basis of the obtained distance data.
摘要翻译：在包含片状部件的整个宽度的范围内，将激光发射到卷绕在成形鼓上的片状部件，并使用具有检测范围的二维激光传感器获得与反射面的距离的距离数据同时沿着鼓的圆周方向移动二维激光传感器或成形鼓的鼓宽度方向。此外，基于获得的距离数据来计算片状构件的宽度方向的相对端部的位置。

32. 发明授权

US08922182B2 DC converter circuit and power supply circuit 有权
标题翻译： DC转换电路和电源电路
公开(公告)号：US08922182B2
公开(公告)日：2014-12-30
申请号：US12956491
申请日：2010-11-30
申请人： Kei Takahashi , Yoshiaki Ito , Hiroki Inoue , Tatsuji Nishijima
发明人： Kei Takahashi , Yoshiaki Ito , Hiroki Inoue , Tatsuji Nishijima
IPC分类号： G05F1/00 , H01L27/12 , H01L29/786 , H02M3/155
CPC分类号： H02M3/156 , H01L27/12 , H01L27/1225 , H01L29/7869 , H02M3/155
摘要： A DC converter circuit having high reliability is provided. The DC converter circuit includes: an inductor configured to generate electromotive force in accordance with a change in flowing current; a transistor including a gate, a source, and a drain, which is configured to control generation of the electromotive force in the inductor by being on or off; a rectifier in a conducting state when the transistor is off; and a control circuit configured to control on and off of the transistor. The transistor includes an oxide semiconductor layer whose hydrogen concentration is less than or equal to 5×1019 atoms/cm3 as a channel formation layer.
摘要翻译：提供了具有高可靠性的DC转换器电路。 DC转换器电路包括：电感器，被配置为根据流动电流的变化产生电动势; 包括栅极，源极和漏极的晶体管，其被配置为通过导通或关断来控制电感器中的电动势的产生; 当晶体管截止时处于导通状态的整流器; 以及被配置为控制晶体管的导通和截止的控制电路。晶体管包括作为沟道形成层的氢浓度小于或等于5×1019原子/ cm3的氧化物半导体层。

33. 发明授权

US08727940B2 Device for controlling power transmission of vehicle 有权
标题翻译：用于控制车辆动力传递的装置
公开(公告)号：US08727940B2
公开(公告)日：2014-05-20
申请号：US13994174
申请日：2011-08-09
申请人： Hiroki Inoue , Takeshige Miyazaki
发明人： Hiroki Inoue , Takeshige Miyazaki
IPC分类号： B60W10/02 , B60W10/08
CPC分类号： B60W20/40 , B60K6/387 , B60K6/48 , B60K2006/4808 , B60L7/18 , B60L11/14 , B60L15/2009 , B60L2220/14 , B60L2240/12 , B60L2240/423 , B60L2240/461 , B60L2250/24 , B60L2250/26 , B60W10/06 , B60W10/08 , B60W10/11 , B60W20/00 , B60W20/14 , B60W20/15 , B60W30/18 , B60W30/18127 , B60W30/19 , B60W50/06 , B60W2540/103 , B60W2540/12 , B60W2540/14 , B60W2710/0666 , B60W2710/083 , B60Y2400/71 , Y02T10/6221 , Y02T10/626 , Y02T10/6286 , Y02T10/645 , Y02T10/70 , Y02T10/7077 , Y02T10/72 , Y02T10/7275 , Y10T477/26 , Y10T477/68
摘要： This power transmission control device is applied to a hybrid vehicle which includes an internal combustion engine and a motor (MG) as power sources. The power transmission control device includes a manual transmission and a friction clutch. When a clutch enters a completely disengaged state as a result of operation of a clutch pedal by a driver in a state where MG torque is adjusted to regeneration torque acting in a direction for decelerating the vehicle, the magnitude of the regeneration torque is decreased to “minute value A which is greater than zero,” and then maintained at the minute value A. Much energy generated as a result of regeneration can be stored in a battery (see the area shown by dots) as compared with the case where the regeneration torque is adjusted to zero immediately after the clutch enters the completely disengaged state. Accordingly, energy efficiency (fuel efficiency) is improved.
摘要翻译：该动力传递控制装置适用于作为动力源的内燃机和电动机（MG）的混合动力车辆。动力传递控制装置包括手动变速器和摩擦离合器。当离合器由于驾驶员在将MG转矩调节为沿着使车辆减速的方向作用的再生转矩的状态下由驾驶员进行离合器踏板的操作而进入完全分离状态时，再生转矩的大小减小到“ 分数值A大于零“，然后维持在分钟值A.与再生转矩（例如，再生转矩）的情况相比，能够将生成的再生结果所产生的许多能量存储在电池（见点所示的区域）在离合器进入完全脱离状态之后立即调整为零。因此，能量效率（燃料效率）提高。

34. 发明授权

US08600608B2 Communication system for vehicle 有权
标题翻译：车辆通信系统
公开(公告)号：US08600608B2
公开(公告)日：2013-12-03
申请号：US13235655
申请日：2011-09-19
申请人： Hiroki Inoue , Yuichi Ochiai , Tomohiro Kani , Ichiro Usami , Takashi Wada
发明人： Hiroki Inoue , Yuichi Ochiai , Tomohiro Kani , Ichiro Usami , Takashi Wada
IPC分类号： G06F7/00
CPC分类号： B60R25/00
摘要： A communication system for a vehicle includes: a plurality of controllers mounted on the vehicle; a data communication network for coupling the plurality of controllers with each other so that the controllers transmit data to and receive data from each other via the data communication network; a failure diagnosis device for diagnosing whether each controller is normal; a failure diagnosis activation device for activating the failure diagnosis device; and an avoiding condition setting device for setting an avoiding condition, which provides to avoid execution of the failure diagnosis when the failure diagnosis device is activated.
摘要翻译：车辆通信系统包括：安装在车辆上的多个控制器; 数据通信网络，用于将多个控制器彼此耦合，使得控制器经由数据通信网络将数据彼此传输和接收数据; 用于诊断每个控制器是否正常的故障诊断装置; 用于激活故障诊断装置的故障诊断激活装置; 以及用于设置避免条件的避免条件设置装置，其提供在故障诊断装置被激活时避免执行故障诊断。

35. 发明授权

US08577147B2 Character recognition apparatus and character recognition method 有权
标题翻译：字符识别装置和字符识别方法
公开(公告)号：US08577147B2
公开(公告)日：2013-11-05
申请号：US13150743
申请日：2011-06-01
申请人： Shohei Hasegawa , Shinichi Eguchi , Hajime Kawashima , Koichi Kanamoto , Hiroki Inoue , Maki Yabuki , Katsutoshi Kobara
发明人： Shohei Hasegawa , Shinichi Eguchi , Hajime Kawashima , Koichi Kanamoto , Hiroki Inoue , Maki Yabuki , Katsutoshi Kobara
IPC分类号： G06K9/18 , G06K9/48
CPC分类号： G06K9/346 , G06K2209/01
摘要： An objective is to eliminate dotted lines in a character box in image data to increase the character recognition rate. There are some cases in which a dotted line candidate cannot be extracted due to many overlapping parts of dotted lines and characters or due to a blurry part in a dotted line. In such cases, the position of a dotted line candidate is estimated referring to features such as the interval, length, width, etc. of a dotted line candidate in the same character box (or in a character box for another relevant item), and image data of the estimated position and image data of a previously extracted dotted line (or a reference dotted line) are compared to determine whether or not they are an identical dotted line.
摘要翻译：目的是消除图像数据中字符框中的虚线，以增加字符识别率。有些情况下，由于虚线和字符的重叠部分，或由于虚线中的模糊部分，虚线候选不能被提取。在这种情况下，参照同一字符框（或另一相关项目的字符框）中的虚线候补的间隔，长度，宽度等特征来估计虚线候选的位置，以及比较先前提取的虚线（或参考虚线）的估计位置和图像数据的图像数据，以确定它们是否是相同的虚线。

36. 发明授权

US08467231B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08467231B2
公开(公告)日：2013-06-18
申请号：US13193756
申请日：2011-07-29
申请人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： G11C16/0408 , G11C11/405 , G11C16/02
摘要： The semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：使用允许充分降低晶体管的截止电流的材料形成半导体器件; 例如，使用作为宽间隙半导体的氧化物半导体材料。当使用允许充分降低晶体管的截止电流的半导体材料时，半导体器件可以长时间保存数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

37. 发明授权

US08435866B2 Method for manufacturing silicon carbide substrate 失效
标题翻译：碳化硅基板的制造方法
公开(公告)号：US08435866B2
公开(公告)日：2013-05-07
申请号：US13256991
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： C30B29/36 , C30B33/06
摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
摘要翻译：制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。表面层至少部分去除。在该去除步骤之后，背面和主表面彼此连接。

38. 发明申请

US20120184113A1 METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：用于制造碳化硅基板的方法和装置
公开(公告)号：US20120184113A1
公开(公告)日：2012-07-19
申请号：US13395793
申请日：2011-01-07
申请人： Hiroki Inoue , Shin Harada , Makoto Sasaki , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
发明人： Hiroki Inoue , Shin Harada , Makoto Sasaki , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
IPC分类号： H01L21/30 , H05B3/02
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/02529 , H01L21/02667 , H01L21/7602 , H01L29/1608 , H01L29/66068
摘要： A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently.
摘要翻译：执行制备叠层的步骤，将第一单晶衬底组和第一衬底中的每个单晶衬底彼此面对，将每个单晶衬底放置在第二单晶衬底组中，第二基板彼此面对，并且在一个方向上依次堆叠第一单晶基板组，第一基板，插入部，第二单晶基板组和第二基板。接下来，对叠层进行加热，以使堆叠的温度达到碳化硅可以升华的温度，并且在上述方向上随着温度升高而在叠层中形成温度梯度。以这种方式，可以有效地制造碳化硅衬底。

39. 发明申请

US20120161158A1 COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：具有碳化硅基板的组合基板
公开(公告)号：US20120161158A1
公开(公告)日：2012-06-28
申请号：US13394640
申请日：2011-06-17
申请人： Tsutomu Hori , Shin Harada , Hiroki Inoue , Makoto Sasaki , Satomi Itoh , Kyoko Okita , Yasuo Namikawa
发明人： Tsutomu Hori , Shin Harada , Hiroki Inoue , Makoto Sasaki , Satomi Itoh , Kyoko Okita , Yasuo Namikawa
IPC分类号： H01L29/161
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02631 , H01L21/0475 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate.
摘要翻译：第一碳化硅衬底具有连接到支撑部分的第一背面，与第一背面相对的第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧表面。第二碳化硅衬底具有连接到支撑部分的第二背面，与第二背面相对的第二前侧表面，以及将第二背面和第二前侧表面彼此连接的第二侧表面，在第一侧表面和第二侧表面之间形成间隙。闭合部分闭合间隙。由此，可以防止异物残留在组合基板中设置的多个碳化硅基板之间的间隙中。

40. 发明申请

US20120063205A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120063205A1
公开(公告)日：2012-03-15
申请号：US13230093
申请日：2011-09-12
申请人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： H01L27/1052 , G11C8/08 , G11C11/403 , G11C11/405 , G11C11/4085 , G11C16/02 , G11C16/0433 , G11C16/0483 , G11C16/08 , G11C2211/4016
摘要： A semiconductor device in which stored data can be held even when power is not supplied and there is no limitation on the number of writing operations is provided. A semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, such as an oxide semiconductor material that is a wide-gap semiconductor. When a semiconductor material which can sufficiently reduce the off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, by providing a capacitor or a noise removal circuit electrically connected to a write word line, a signal such as a short pulse or a noise input to a memory cell can be reduced or removed. Accordingly, a malfunction in which data written into the memory cell is erased when a transistor in the memory cell is instantaneously turned on can be prevented.
摘要翻译：即使在不提供电力的情况下也可以保存存储的数据，并且没有限制写入操作的数量的半导体装置。使用可以充分降低诸如作为宽间隙半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。当使用可以充分降低晶体管的截止电流的半导体材料时，半导体器件可以长期保存数据。此外，通过提供电连接到写字线的电容器或噪声去除电路，可以减少或去除诸如短脉冲或输入到存储器单元的噪声的信号。因此，可以防止当存储单元中的晶体管瞬间导通时擦除写入存储单元的数据的故障。

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