专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20050066881A1 Continuous production method for crystalline silicon and production apparatus for the same 审中-公开
标题翻译：晶体硅的连续生产方法及其制造装置
公开(公告)号：US20050066881A1
公开(公告)日：2005-03-31
申请号：US10938509
申请日：2004-09-13
申请人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida
发明人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： H01L31/182 , C30B28/08 , C30B28/10 , C30B29/06 , Y02E10/546 , Y02P70/521 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.
摘要翻译：提供了一种用于结晶硅的连续生产方法，包括：将熔融的硅保持在坩埚中; 通过从坩埚向上提供负温度梯度来固化靠近原料硅表面的部分; 通过牵引装置保持凝固的晶体硅; 并以预定的速率拉动固化的结晶硅，同时当固化的结晶硅通过具有开口的开放式加热器的开口部分时，通过使固化的结晶硅与开放的加热器接触来成形固化的结晶硅的截面形状并且保持在比原料硅的熔点高的温度。该方法即使在使用低纯度原料硅如冶金级硅时，也能以低成本连续生产具有均匀结晶度或杂质浓度和高质量的结晶硅锭。

32. 发明授权

US06872248B2 Liquid-phase growth process and liquid-phase growth apparatus 失效
标题翻译：液相生长过程和液相生长装置
公开(公告)号：US06872248B2
公开(公告)日：2005-03-29
申请号：US10400636
申请日：2003-03-28
申请人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B19/06 , C30B29/06 , H01L21/208 , C30B19/04 , C30B19/10
CPC分类号： C30B19/068 , C30B19/062 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
摘要翻译：一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。适用于实施所述液相生长过程的液相生长装置。

33. 发明授权

US06802900B2 Liquid phase growth methods and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06802900B2
公开(公告)日：2004-10-12
申请号：US10022545
申请日：2001-12-20
申请人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
发明人： Masaaki Iwane , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/02 , C30B19/04 , C30B19/06 , C30B19/08
摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.
摘要翻译：提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

34. 发明授权

US06566277B1 Liquid-phase growth method, liquid-phase growth apparatus, and solar cell 失效
标题翻译：液相生长方法，液相生长装置和太阳能电池
公开(公告)号：US06566277B1
公开(公告)日：2003-05-20
申请号：US09664340
申请日：2000-09-18
申请人： Katsumi Nakagawa , Shoji Nishida
发明人： Katsumi Nakagawa , Shoji Nishida
IPC分类号： H01L2130
CPC分类号： C30B19/06 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02573 , H01L21/02625 , H01L21/02628
摘要： The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a second semiconductor layer on the first semiconductor layer in liquid phase at a higher temperature; a solar cell produced by a method comprising a step of anodizing the surface of the first and second layer side of the semiconductor substrate produced by the liquid-phase growth method; a liquid-phase growth apparatus comprising means for storing a melt, means for changing the temperature of the stored melt, and means for bringing an oxygen-containing substrate into contact with the melt, wherein a substrate is brought into contact with the melt at a temperature so as to suppress the stacking faults contained in the semiconductor layer grown on the surface of the substrate.
摘要翻译：本发明提供一种制造半导体衬底的方法，其包括以下步骤：在适当控制的温度下在液相中在衬底上生长第一半导体层，以消除缺陷，并在液相中在第一半导体层上生长第二半导体层更高的温度; 通过包括通过液相生长法生产的半导体衬底的第一层和第二层的表面进行阳极氧化的步骤的方法制造的太阳能电池; 液相生长装置，包括用于储存熔体的装置，用于改变所储存的熔体温度的装置，以及使含氧基材与熔体接触的装置，其中使衬底与熔体接触，以抑制在衬底表面上生长的半导体层中包含的堆垛层错。

35. 发明授权

US07615115B2 Liquid-phase growth apparatus and method 失效
标题翻译：液相生长装置及方法
公开(公告)号：US07615115B2
公开(公告)日：2009-11-10
申请号：US12168464
申请日：2008-07-07
申请人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B19/00
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
摘要翻译：用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。衬底保持器包括连接器，接收部件和推动部件。接收部件和推动部件彼此相对并且通过连接器连接。推动部件保持基板的上部，而接收部件保持基板的下部。将含有垂直保持的基板的基板保持器浸入溶液中。接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

36. 发明申请

US20060160336A1 Silicon layer production method and solar cell production method 失效
标题翻译：硅层生产方法和太阳能电池生产方法
公开(公告)号：US20060160336A1
公开(公告)日：2006-07-20
申请号：US10563115
申请日：2005-05-17
申请人： Masaki Mizutani , Shoji Nishida , Katsumi Nakagawa
发明人： Masaki Mizutani , Shoji Nishida , Katsumi Nakagawa
IPC分类号： H01L21/20 , C23C16/24
CPC分类号： H01L31/182 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L21/02658 , Y02E10/546 , Y02P70/521
摘要： A solar cell is produced by dipping a multicrystalline silicon substrate 28 in a solution 24 containing silicon, growing a silicon layer on the substrate 28 while decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.
摘要翻译：通过将多晶硅基板28浸渍在含硅的溶液24中来生产太阳能电池，在衬底28上生长硅层，同时随着时间的推移在衬底浸入溶液中时溶液的温度降低速率降低，并形成硅层中的pn结。因此，提供了可以在抑制粗糙度的同时形成厚层的硅层制造方法，由此提供实现大电流和高FF的低成本多晶硅太阳能电池制造方法。

37. 发明授权

US07014711B2 Liquid-phase growth apparatus and method 失效
公开(公告)号：US07014711B2
公开(公告)日：2006-03-21
申请号：US10385457
申请日：2003-03-12
申请人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B35/00
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

38. 发明申请

US20060054078A1 Liquid-phase growth apparatus and method 失效
标题翻译：液相生长装置及方法
公开(公告)号：US20060054078A1
公开(公告)日：2006-03-16
申请号：US11270562
申请日：2005-11-10
申请人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B11/00 , C30B19/00
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
摘要翻译：用于在基板上生长晶体的液相生长装置包括含有含有用于形成晶体的粘结材料的溶液的坩埚和用于垂直保持基板的基板保持器。衬底保持器包括连接器，接收部件和推动部件。接收部件和推动部件彼此相对并且通过连接器连接。推动部件保持基板的上部，而接收部件保持基板的下部。将含有垂直保持的基板的基板保持器浸入溶液中。接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

39. 发明授权

US06951585B2 Liquid-phase growth method and liquid-phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06951585B2
公开(公告)日：2005-10-04
申请号：US10397310
申请日：2003-03-27
申请人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida , Yasuyoshi Takai
发明人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida , Yasuyoshi Takai
IPC分类号： C30B19/02 , H01L31/18 , C30B19/10
CPC分类号： H01L31/182 , C30B19/02 , C30B29/06 , Y02E10/546 , Y02P70/521
摘要： A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.
摘要翻译：一种液晶生长方法，用于将熔融物中的多晶衬底浸入其中溶解晶体成分的坩埚中，从而在基底上生长多晶体，包括将多晶生长至预定厚度的第一步骤和用于熔化的第二步骤将在熔体中第一步生长的一部分多晶体返回，其中在第一步骤和第二步骤之间改变衬底和熔体之间的相对位置，使不同温度的熔体与多晶表面接触。所获得的多晶体具有与常规太阳能电池中使用的多晶体的性能相当的特性，但在应用于太阳能电池的情况下几乎没有诸如栅电极的线断线等故障的风险，并且可以以低成本大量获得。

40. 发明授权

US06429035B2 Method of growing silicon crystal in liquid phase and method of producing solar cell 失效
标题翻译：在液相中生长硅晶体的方法和生产太阳能电池的方法
公开(公告)号：US06429035B2
公开(公告)日：2002-08-06
申请号：US09198263
申请日：1998-11-24
申请人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
发明人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
IPC分类号： H01L2120
CPC分类号： H01L27/1296 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , H01L29/66765 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined concentration into indium melted in a carbon boat or a quartz crucible, supersaturating the melt, and submerging a substrate into the melt, thereby growing a silicon crystal containing a dopant element. This method can provide a method of growing a thin film of crystalline silicon having a high crystallinity and a dopant concentration favorably controlled, thereby serving for mass production of inexpensive solar cells which have high performance as well as image displays which have high contrast and are free from color ununiformity.
摘要翻译：在液相中生长单晶硅的方法包括通过将以预定浓度的含有硼，铝，磷或砷的硅的固体溶解在在碳舟或石英坩埚中熔化的铟中来制备熔体，使熔体过饱和，以及将衬底浸入熔体中，从而生长含有掺杂元素的硅晶体。该方法可以提供一种生长具有高结晶度和有利于控制的掺杂剂浓度的晶体硅薄膜的方法，从而用于批量生产具有高性能的廉价太阳能电池以及具有高对比度且无游离的图像显示器从颜色不均匀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式