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    • 32. 发明申请
    • THIN FILM FIELD-EFFECT TRANSISTOR AND DISPLAY USING THE SAME
    • 薄膜场效应晶体管和使用它的显示器
    • US20100059746A1
    • 2010-03-11
    • US12545885
    • 2009-08-24
    • Yuichiro Itai
    • Yuichiro Itai
    • H01L29/786
    • H01L29/7869H01L29/78609H01L29/78621H01L29/78696
    • The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.
    • 本发明提供了一种薄膜场效应晶体管,其包括至少栅电极,栅绝缘膜,有源层,源电极和漏电极的基板,其中有源层是氧化物半导体层, 具有低于有源层的电导率的电导率的电阻层设置在有源层与源电极或漏电极中的至少一个之间,以及包括氧化物的中间层,所述氧化物包括具有更强的元素的氧化物 在活性层和电阻层之间设置相对于氧的有源层中的氧化物半导体的结合力。