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    • 31. 发明授权
    • Quantum cryptography communication apparatus and communication terminal
    • 量子密码通信装置和通信终端
    • US08165298B2
    • 2012-04-24
    • US12032560
    • 2008-02-15
    • Yohei KawamotoTakuya HiranoKuninori ShinoMasakazu Ukita
    • Yohei KawamotoTakuya HiranoKuninori ShinoMasakazu Ukita
    • H04K1/00
    • H04B10/548G09C1/00H04L9/0858
    • In a quantum cryptography communication apparatus, a light pulse is generated by a light source and split into a signal light pulse and a reference light pulse on a receiving side. The signal light pulse and the reference light pulse are transmitted to a sending side via a communication channel. On the sending side, the received reference light is passed through a first optical path and phase-modulated by a randomly selected amount. Communication information is acquired on the basis of the reference light passed through the first optical path and the signal light passed via a second optical path. Frequencies of the signal light pulse and the reference light pulse are shifted. The intensity of the signal light pulses is attenuated and phase-modulated by an amount corresponding to the communication information. The resultant signal light pulse and the reference light pulse are returned back to the receiving side.
    • 在量子密码通信装置中,由光源产生光脉冲,并在接收侧分割为信号光脉冲和参考光脉冲。 信号光脉冲和参考光脉冲经由通信信道发送到发送侧。 在发送侧,接收到的参考光通过第一光路并被随机选择的量进行相位调制。 基于通过第一光路的参考光和经由第二光路通过的信号光获取通信信息。 信号光脉冲和参考光脉冲的频率偏移。 信号光脉冲的强度被衰减并相位调制与通信信息对应的量。 所得到的信号光脉冲和参考光脉冲被返回到接收侧。
    • 32. 发明申请
    • QUANTUM CRYPTOGRAPHY COMMUNICATION APPARATUS AND COMMUNICATION TERMINAL
    • QUANTUM CRYPTOGRAPHY通信设备和通信终端
    • US20080267635A1
    • 2008-10-30
    • US12032560
    • 2008-02-15
    • Yohei KawamotoTakuya HiranoKuninori ShinoMasakazu Ukita
    • Yohei KawamotoTakuya HiranoKuninori ShinoMasakazu Ukita
    • H04B10/12
    • H04B10/548G09C1/00H04L9/0858
    • In a quantum cryptography communication apparatus, a light pulse is generated by a light source and split into a signal light pulse and a reference light pulse on a receiving side. The signal light pulse and the reference light pulse are transmitted to a sending side via a communication channel. On the sending side, the received reference light is passed through a first optical path and phase-modulated by a randomly selected amount. Communication information is acquired on the basis of the reference light passed through the first optical path and the signal light passed via a second optical path. Frequencies of the signal light pulse and the reference light pulse are shifted. The intensity of the signal light pulses is attenuated and phase-modulated by an amount corresponding to the communication information. The resultant signal light pulse and the reference light pulse are returned back to the receiving side.
    • 在量子密码通信装置中,由光源产生光脉冲,并在接收侧分割为信号光脉冲和参考光脉冲。 信号光脉冲和参考光脉冲经由通信信道发送到发送侧。 在发送侧,接收到的参考光通过第一光路并被随机选择的量进行相位调制。 基于通过第一光路的参考光和经由第二光路通过的信号光获取通信信息。 信号光脉冲和参考光脉冲的频率偏移。 信号光脉冲的强度被衰减并相位调制与通信信息对应的量。 所得到的信号光脉冲和参考光脉冲被返回到接收侧。
    • 33. 发明申请
    • Quantum cipher communication system and method of setting average photon number at communication terminal
    • 量子密码通信系统及通信终端平均光子数设定方法
    • US20070248229A1
    • 2007-10-25
    • US11725158
    • 2007-03-15
    • Yohei KawamotoTakuya HiranoKuninori ShinoMasakazu Ukita
    • Yohei KawamotoTakuya HiranoKuninori ShinoMasakazu Ukita
    • H04K1/00
    • H04B10/70H04L9/0858
    • A quantum cipher communication system performs communication processing based on quantum cipher. It may have a first communication terminal, a second communication terminal, and a communication path that connects them. The first communication terminal may contain an optical source, a first light-separating device, optical paths, a light-synthesizing device, a second light-separating device, a first phase-modulator, and a homodyne detector that performs homodyne detection based on the reference light separated in the second light-separating device and passed through the first optical path and the signal light separated in the second light-separating device and passed through the second optical path. The second communication terminal may contain a light-sending device, an optical attenuator, a second phase-modulator, and a photon-number-setting device that sets to a predetermined value an average photon number of the signal light sent to the communication path from the light-sending device.
    • 量子密码通信系统基于量子密码进行通信处理。 它可以具有第一通信终端,第二通信终端和连接它们的通信路径。 第一通信终端可以包含光源,第一光分离装置,光路,光合成装置,第二光分离装置,第一相位调制器和零差检测器,其基于 参考光在第二光分离装置中分离并通过第一光路和在第二光分离装置中分离的信号光,并通过第二光路。 第二通信终端可以包含发光装置,光衰减器,第二相位调制器和光子数设定装置,其将从发送到通信路径的信号光的平均光子数设定为预定值 发光装置。
    • 36. 发明申请
    • Signal Processing Apparatus and Signal Processing Method
    • 信号处理装置及信号处理方法
    • US20060146648A1
    • 2006-07-06
    • US11276674
    • 2006-03-09
    • Masakazu Ukita
    • Masakazu Ukita
    • G01S3/80
    • H04R1/406H04N7/15H04R3/005H04R2499/13
    • The invention provides a method and apparatus by which the direction in or the position at which a signal source such as a sound source is present is estimated. A signal or signals from a signal source or a plurality of signal sources are received by a plurality of reception apparatus, and the received signals are decomposed into signals of different frequency bands by a plurality of band-pass filters. Then, cross correlation functions between the different frequency band signals are calculated for individual combinations of the reception apparatus for the individual corresponding frequency bands. If the power of noise having no directivity is high in some of the frequency bands, then the cross correlation functions of the frequency band do not exhibit a maximum value. Therefore, an influence of the noise can be suppressed effectively when delay times of the individual reception apparatus which depend upon the direction or directions or the position or positions of the signal source or sources are estimated.
    • 本发明提供一种方法和装置,通过该方法和装置,可以估计存在诸如声源的信号源的方向或位置。 来自信号源或多个信号源的信号或信号由多个接收装置接收,并且接收的信号被多个带通滤波器分解成不同频带的信号。 然后,针对各个相应频带的接收装置的各个组合计算不同频带信号之间的互相关函数。 如果在一些频带中没有方向性的噪声的功率很高,则频带的互相关函数不表现出最大值。 因此,在根据信号源或方向的方向或位置或位置的各个接收装置的延迟时间被估计时,可以有效地抑制噪声的影响。
    • 37. 发明授权
    • Semiconductor laser and production method thereof
    • 半导体激光及其制造方法
    • US06682949B2
    • 2004-01-27
    • US10191151
    • 2002-07-09
    • Masakazu Ukita
    • Masakazu Ukita
    • H01L2100
    • B82Y20/00H01S5/0658H01S5/2022H01S5/2231H01S5/2237H01S5/3415
    • A semiconductor laser basically includes a first cladding layer; an active layer; a second cladding layer; and a current constriction means for defining a current injection region in the active layer. The active layer has a gain region which acquires an optical gain by current injection thereto; a saturable absorption region in which current injection thereto little occurs and light effusion thereto occurs; and an outside region, being in contact with the saturable absorption region, in which current injection thereto little occurs and light effusion thereto little occurs. In this semiconductor laser, an effective band gap of the saturable absorption region is set to be larger than that of the outside region. With this configuration, carriers in the saturable absorption region are efficiently migrated to the outside region, so that the carrier lifetime in the saturable absorption region is actually shortened. As a result, the semiconductor laser can sustain the self pulsation at a high light output and a high operational temperature, and further can be produced with a good production yield.
    • 半导体激光器基本上包括第一覆层; 活性层 第二覆层; 以及用于限定有源层中的电流注入区域的电流收缩装置。 有源层具有通过电流注入而获得光学增益的增益区域; 饱和吸收区域,其中几乎不发生电流注入并发生光渗出; 以及与可饱和吸收区域接触的外部区域,其中几乎不发生电流注入,并且少量发生光渗出。 在该半导体激光器中,可饱和吸收区域的有效带隙被设定为大于外部区域的有效带隙。 利用这种构造,可饱和吸收区域中的载流子被有效地迁移到外部区域,从而实际上缩短了可饱和吸收区域中的载流子寿命。 结果,半导体激光器能够在高光输出和高操作温度下维持自脉动,并且可以以良好的产量获得。
    • 38. 发明授权
    • Semiconductor laser and production method thereof
    • 半导体激光及其制造方法
    • US06470039B1
    • 2002-10-22
    • US09457133
    • 1999-12-09
    • Masakazu Ukita
    • Masakazu Ukita
    • H01S500
    • B82Y20/00H01S5/0658H01S5/2022H01S5/2231H01S5/2237H01S5/3415
    • A semiconductor laser basically includes a first cladding layer; an active layer; a second cladding layer; and a current constriction means for defining a current injection region in the active layer. The active layer has a gain region which acquires an optical gain by current injection thereto; a saturable absorption region in which current injection thereto little occurs and light effusion thereto occurs; and an outside region, being in contact with the saturable absorption region, in which current injection thereto little occurs and light effusion thereto little occurs. In this semiconductor laser, an effective band gap of the saturable absorption region is set to be larger than that of the outside region. With this configuration, carriers in the saturable absorption region are efficiently migrated to the outside region, so that the carrier lifetime in the saturable absorption region is actually shortened. As a result, the semiconductor laser can sustain the self pulsation at a high light output and a high operational temperature, and further can be produced with a good production yield.
    • 半导体激光器基本上包括第一覆层; 活性层 第二覆层; 以及用于限定有源层中的电流注入区域的电流收缩装置。 有源层具有通过电流注入而获得光学增益的增益区域; 饱和吸收区域,其中几乎不发生电流注入并发生光渗出; 以及与可饱和吸收区域接触的外部区域,其中几乎不发生电流注入,并且少量发生光渗出。 在该半导体激光器中,可饱和吸收区域的有效带隙被设定为大于外部区域的有效带隙。 利用这种构造,可饱和吸收区域中的载流子被有效地迁移到外部区域,从而实际上缩短了可饱和吸收区域中的载流子寿命。 结果,半导体激光器能够在高光输出和高操作温度下维持自脉动,并且可以以良好的产量获得。
    • 39. 再颁专利
    • Semiconductor laser
    • 半导体激光器
    • USRE37177E1
    • 2001-05-15
    • US09260865
    • 1999-03-01
    • Masakazu UkitaAkira Ishibashi
    • Masakazu UkitaAkira Ishibashi
    • H01S532
    • B82Y20/00H01S5/0224H01S5/024H01S5/028H01S5/0421H01S5/06209H01S5/327H01S5/34333H01S5/347
    • A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(Q) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/T0)Ithvth &bgr;≡(Rt/T0)RSTth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((2ln t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
    • 半导体激光器包括:第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。 第一包层,有源层和第二包层由II-VI化合物半导体制成。 脉冲振荡发生在阈值电流Ith(A),由第一包层,有源层和第二包层组成的二极管的阈值电压Vth(V),二极管的差分电阻RS(Q) 上升之后,具有热阻Rt(K / W)和特征温度T0(K)。 当α和β两个定义为:α(β,β)点存在于由直线α= 0包围的α-β平面上的区域,直线β= 0,曲线((21n t -1)/ t,(1-ln t)/ t2)。 半导体激光器可以包括在第一包层和有源层之间的第一光波导层,并且在第二包层和有源层之间包括第二光波导层,第一光波导层和第二光波导层由 II-VI化合物半导体。 制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。 提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。