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31. 发明授权

US06831860B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US06831860B2
公开(公告)日：2004-12-14
申请号：US09997080
申请日：2001-11-28
申请人： Byeong-Hoon Lee , Seung-Keun Lee
发明人： Byeong-Hoon Lee , Seung-Keun Lee
IPC分类号： G11C1604
CPC分类号： G11C16/0416 , G11C16/08
摘要： A sector structure of a flash memory device minimizes a layout area in a chip without deteriorating a high-speed operation. The sector structure of the flash memory device includes a plurality of sectors, each sector including memory cell transistors in a cell array block sharing a common bulk region with transistors in a column decoder block.
摘要翻译：闪存器件的扇区结构使芯片中的布局区域最小化，而不会降低高速操作。闪存器件的扇区结构包括多个扇区，每个扇区包括与列解码器块中的晶体管共享公共体区的单元阵列块中的存储单元晶体管。

32. 发明授权

US5773852A Shorted anode lateral insulated gate bipolar transistor 失效
标题翻译：短路阳极横向绝缘栅双极晶体管
公开(公告)号：US5773852A
公开(公告)日：1998-06-30
申请号：US679564
申请日：1996-07-15
申请人： Min-Koo Han , Byeong-Hoon Lee , Moo-Sup Lim , Yearn-Ik Choi , Jung-Eon Park , Won-Oh Lee
发明人： Min-Koo Han , Byeong-Hoon Lee , Moo-Sup Lim , Yearn-Ik Choi , Jung-Eon Park , Won-Oh Lee
IPC分类号： H01L29/78 , H01L29/72 , H01L29/739 , H01L29/786 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7394
摘要： A shorted anode lateral insulated gate bipolar transistor includes a semiconductor layer of a first conductivity type, a first current electrode, a second current electrode, a first insulation layer, a first gate electrode, a second gate electrode, a first high concentration impurity region of a second conductivity type, a low concentration impurity region of the second conductivity type, a first high concentration impurity region of the first conductivity type, a second high concentration impurity region of the second conductivity type, a third high concentration impurity region of the second conductivity type, and a second high concentration impurity region of the first conductivity type.
摘要翻译：短路阳极横向绝缘栅双极晶体管包括第一导电类型的半导体层，第一电流电极，第二电流电极，第一绝缘层，第一栅极电极，第二栅极电极，第一高浓度杂质区域第二导电类型的低浓度杂质区，第二导电类型的第一高浓度杂质区，第二导电类型的第一高浓度杂质区，第二导电类型的第二高浓度杂质区，第二导电类型的第二高浓度杂质区，型和第一导电类型的第二高浓度杂质区。

33. 发明授权

US08259501B2 Flash memory system operating in a random access mode 有权
标题翻译：闪存系统以随机存取模式运行
公开(公告)号：US08259501B2
公开(公告)日：2012-09-04
申请号：US13006068
申请日：2011-01-13
申请人： Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
发明人： Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
IPC分类号： G11C16/04
CPC分类号： G11C16/0483
摘要： A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory.
摘要翻译：存储器系统包括操作以控制存储器的存储器和存储器控制器。存储器包括随机存取存储器，其包括以随机存取模式操作的存储单元阵列，NAND闪速存储器和使存储器控制器操作随机存取存储器或NAND闪速存储器之一的选择电路。

34. 发明授权

US07590022B2 Electric fuse circuit providing margin read function 有权
标题翻译：电熔丝电路提供裕度读取功能
公开(公告)号：US07590022B2
公开(公告)日：2009-09-15
申请号：US11623575
申请日：2007-01-16
申请人： Byeong-Hoon Lee
发明人： Byeong-Hoon Lee
IPC分类号： G11C17/18
CPC分类号： H01L23/525 , G11C16/04 , G11C16/0441 , G11C16/28 , G11C17/165 , G11C29/027 , G11C29/50 , G11C2029/1204 , H01L2924/0002 , H01L2924/00
摘要： An electric fuse circuit including a first nonvolatile memory cell connected to a first bit line, a second nonvolatile memory cell connected to a second bit line, a latch connected to the first and second bit lines, and a bias current circuit supplying one of the first and second bit lines with variable bias currents through the latch in response to a bias control signal during a test operation.
摘要翻译：一种电熔丝电路，包括连接到第一位线的第一非易失性存储单元，连接到第二位线的第二非易失性存储单元，连接到第一和第二位线的锁存器，以及提供第一位线之一的偏置电流电路以及响应于测试操作期间的偏置控制信号，通过锁存器具有可变偏置电流的第二位线。

35. 发明申请

US20090095955A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND TESTING METHOD THEREOF 有权
标题翻译：半导体集成电路及其测试方法
公开(公告)号：US20090095955A1
公开(公告)日：2009-04-16
申请号：US12249495
申请日：2008-10-10
申请人： Sun-Kwon Kim , Byeong-Hoon Lee , Ki-Hong Kim , Hyuck-Jun Cho
发明人： Sun-Kwon Kim , Byeong-Hoon Lee , Ki-Hong Kim , Hyuck-Jun Cho
IPC分类号： H01L23/58
CPC分类号： G06K19/0723
摘要： A semiconductor integrated circuit including a detector and a secure checker. The detector generates a detection signal upon sensing an abnormal state in an operating environment of the semiconductor integrated circuit. The secure checker generates a check signal to find an operating condition of the detector and receives the detection signal. The detector activates the detection signal in response to the check signal.
摘要翻译：一种包括检测器和安全检查器的半导体集成电路。该检测器在感测半导体集成电路的工作环境中的异常状态时产生检测信号。安全检查器产生检查信号以找到检测器的操作条件并接收检测信号。检测器响应于检查信号激活检测信号。

36. 发明申请

US20080181008A1 FLASH MEMORY SYSTEM CAPABLE OF IMPROVING ACCESS PERFORMANCE AND ACCESS METHOD THEREOF 审中-公开
标题翻译：能够改善访问性能的FLASH存储器系统及其访问方法
公开(公告)号：US20080181008A1
公开(公告)日：2008-07-31
申请号：US11693106
申请日：2007-03-29
申请人： Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
发明人： Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/20
摘要： A flash memory system capable of improving an access performance and an access method thereof. The system includes: a flash memory device including a plurality of storage regions; a contents memory storing setting information corresponding to the plurality of storage regions, respectively; and a processing unit setting operation conditions of the flash memory device by referring to the setting information during an access operation for the flash memory device.
摘要翻译：一种能够提高访问性能的闪存系统及其访问方法。该系统包括：闪存器件，包括多个存储区域; 内容存储器，分别存储与所述多个存储区域相对应的设置信息; 以及处理单元，在闪速存储器件的访问操作期间参考设置信息来设置闪速存储器件的操作条件。

37. 发明申请

US20080157730A1 HIGH-VOLTAGE GENERATION CIRCUIT AND METHOD FOR REDUCING OVERSHOOT OF OUTPUT VOLTAGE 审中-公开
标题翻译：高压发生电路和减少输出电压的方法
公开(公告)号：US20080157730A1
公开(公告)日：2008-07-03
申请号：US11740632
申请日：2007-04-26
申请人： Young-Taek Kim , Byeong-Hoon Lee
发明人： Young-Taek Kim , Byeong-Hoon Lee
IPC分类号： G05F1/10
CPC分类号： H02M3/156 , G11C5/145 , G11C16/30 , H02M2001/0025
摘要： A high-voltage generation circuit used for a non-volatile memory device reduces the overshoot of a high voltage by controlling a current for sensing the high voltage based on the level of the high voltage or by delaying the operation of an oscillator, which generates a clock signal for generating the high voltage, for a predetermined period of time.
摘要翻译：用于非易失性存储器件的高电压发生电路通过控制用于基于高电压电平感测高电压的电流或通过延迟振荡器的操作来控制高电压的过冲，从而产生用于产生高电压的时钟信号预定的时间段。

38. 发明授权

US07300071B2 Shock absorbing device for steering columns 有权
标题翻译：转向柱减震装置
公开(公告)号：US07300071B2
公开(公告)日：2007-11-27
申请号：US11003434
申请日：2004-12-06
申请人： Byeong-Hoon Lee
发明人： Byeong-Hoon Lee
IPC分类号： B62D1/11
CPC分类号： B62D1/195
摘要： A shock absorbing device for steering columns, which has a bracket and a capsule placed around a capsule locking slot of the bracket and fastened along with the bracket to a vehicle body by a locking bolt, is disclosed. The capsule includes an upper plate, a lower plate, and a connector which connects an end of the upper plate to an end of the lower plate. The shock absorbing device further includes a stopper which is provided between the upper plate and the lower plate of the capsule such that the stopper is placed in the capsule locking slot of the bracket. The upper plate of the capsule is bent at an outside edge thereof. The stopper is thinner than the bracket around the capsule locking slot. Furthermore, the upper plate and the lower plate of the capsule are configured such that the upper and lower plates are vertically aligned with each other at outside ends of extensions thereof.
摘要翻译：公开了一种用于转向柱的减震装置，其具有支架和围绕支架的胶囊锁定槽并且通过锁定螺栓与支架一起固定到车体上的胶囊。胶囊包括上板，下板和将上板的端部连接到下板的端部的连接器。该减震装置还包括设置在胶囊的上板和下板之间的止动件，使得止动件被放置在支架的胶囊锁定槽中。胶囊的上板在其外边缘处弯曲。塞子比胶囊锁定槽周围的支架更薄。此外，胶囊的上板和下板被构造成使得上板和下板在其延伸部的外端处彼此垂直对准。

39. 发明授权

US07252019B2 High rigid tilt device in a steering column for a vehicle 有权
标题翻译：用于车辆的转向柱中的高刚性倾斜装置
公开(公告)号：US07252019B2
公开(公告)日：2007-08-07
申请号：US10704736
申请日：2003-11-12
申请人： Byeong-Hoon Lee
发明人： Byeong-Hoon Lee
IPC分类号： B62G1/16
CPC分类号： B62D1/184
摘要： A tilt device is provided to allow a steering column to be tilted so that a driver can adjust the position of a steering wheel to conform to his/her figure in order to more comfortably drive a vehicle. Further, the tilt device is configured to impart a high supporting strength to the steering column while reliably locking the same.
摘要翻译：提供倾斜装置以允许转向柱倾斜，使得驾驶员可以调节方向盘的位置以符合他/她的身材，以便更舒适地驾驶车辆。此外，倾斜装置被构造成在可靠地锁定转向柱的同时赋予转向柱高的支撑强度。

40. 发明授权

US07219927B2 Steering column having variable impact-absorbing structure 有权
标题翻译：转向柱具有可变的冲击吸收结构
公开(公告)号：US07219927B2
公开(公告)日：2007-05-22
申请号：US11036995
申请日：2005-01-19
申请人： Byeong-Hoon Lee
发明人： Byeong-Hoon Lee
IPC分类号： B62D1/00
CPC分类号： B62D1/195
摘要： A steering column having a variable impact-absorbing structure includes an inner column tube, an outer column tube disposed at an outer circumferential part of the inner column tube, a guide fixed to an outer circumferential surface of the outer column tube, a strap having a deformable part fitted into the guide, a pin inserted through the strap and configured to be slidable into the guide, a solenoid that drives the pin, and a control unit that controls the solenoid. The steering column further includes a sensor that senses a state of a driver and outputs the sensing result to the control unit, wherein the strap comprises a plurality of parallel wires, one end of each wire being opened and the other end of each wire being connected to each other in a closed state, and a suspending end that is bent in a loop shape is formed on the closed end to enable the inner column tube to be suspended thereon.
摘要翻译：具有可变冲击吸收结构的转向柱包括内柱管，设置在内柱管的外周部的外柱管，固定到外柱管的外周面的引导件，具有可变形部分装配到引导件中，插入穿过带并被构造成可滑动到引导件中的销，驱动销的螺线管和控制螺线管的控制单元。转向柱还包括感测驾驶员的状态并将感测结果输出到控制单元的传感器，其中，所述带包括多条平行的线，每条线的一端被打开，并且每条线的另一端被连接并且在封闭端形成弯曲成环状的悬挂端，使内筒管悬挂在其上。

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