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31. 发明授权

US09023552B2 Membrane electrode assembly, manufacturing method thereof, and fuel cells 有权
标题翻译：膜电极组件，其制造方法和燃料电池
公开(公告)号：US09023552B2
公开(公告)日：2015-05-05
申请号：US13123646
申请日：2010-09-15
申请人： Junji Nakanishi , Kenji Tsubosaka , Hiroo Yoshikawa
发明人： Junji Nakanishi , Kenji Tsubosaka , Hiroo Yoshikawa
IPC分类号： H01M8/10 , H01M8/02 , H01M4/88 , H01M4/92
CPC分类号： H01M8/1004 , H01M4/881 , H01M4/8817 , H01M4/92 , H01M8/0239 , H01M8/0247 , H01M8/1023 , H01M8/1039 , H01M8/1058 , H01M2300/0082 , Y02E60/521 , Y02P70/56
摘要： The membrane electrode assembly 100 has an electrolyte layer 10, a catalyst layer 20, and a member 15 impregnated with electrolyte which is arranged between the electrolyte layer 10 and the catalyst layer 20. At least part of the peripheral edge portion of the member 15 extends the outside the peripheral edge portions of the electrolyte layer and the catalyst layer 20. With this kind of constitution, it is possible to easily separate the electrolyte layer 10 or the catalyst layer 20 from the member 15 from the extended portion of the member 15. Consequently, it is possible to easily replace the electrolyte layer 10 and the catalyst layer 20.
摘要翻译：膜电极组件100具有电解质层10，催化剂层20和浸渍有电解质的构件15，其被布置在电解质层10和催化剂层20之间。构件15的周缘部分的至少一部分延伸在电解质层和催化剂层20的外围边缘部分的外侧。通过这种构造，可以容易地将电解质层10或催化剂层20与构件15从构件15的延伸部分分离。因此，可以容易地更换电解质层10和催化剂层20。

32. 发明申请

US20120064430A1 MEMBRANE ELECTRODE ASSEMBLY, MANUFACTURING METHOD THEREOF, AND FUEL CELLS 有权
标题翻译：膜电极组件，其制造方法和燃料电池
公开(公告)号：US20120064430A1
公开(公告)日：2012-03-15
申请号：US13123646
申请日：2010-09-15
申请人： Junji Nakanishi , Kenji Tsubosaka , Hiroo Yoshikawa
发明人： Junji Nakanishi , Kenji Tsubosaka , Hiroo Yoshikawa
IPC分类号： H01M8/10 , H01M8/00
CPC分类号： H01M8/1004 , H01M4/881 , H01M4/8817 , H01M4/92 , H01M8/0239 , H01M8/0247 , H01M8/1023 , H01M8/1039 , H01M8/1058 , H01M2300/0082 , Y02E60/521 , Y02P70/56
摘要： The membrane electrode assembly 100 has an electrolyte layer 10, a catalyst layer 20, and a member 15 impregnated with electrolyte which is arranged between the electrolyte layer 10 and the catalyst layer 20. At least part of the peripheral edge portion of the member 15 extends the outside the peripheral edge portions of the electrolyte layer and the catalyst layer 20. With this kind of constitution, it is possible to easily separate the electrolyte layer 10 or the catalyst layer 20 from the member 15 from the extended portion of the member 15. Consequently, it is possible to easily replace the electrolyte layer 10 and the catalyst layer 20.
摘要翻译：膜电极组件100具有电解质层10，催化剂层20和浸渍有电解质的构件15，其被布置在电解质层10和催化剂层20之间。构件15的周缘部分的至少一部分延伸在电解质层和催化剂层20的外围边缘部分的外侧。通过这种构造，可以容易地将电解质层10或催化剂层20与构件15从构件15的延伸部分分离。因此，可以容易地更换电解质层10和催化剂层20。

33. 发明申请

US20110224344A1 Liquid Die Bonding Agent 审中-公开
标题翻译：液体模接合剂
公开(公告)号：US20110224344A1
公开(公告)日：2011-09-15
申请号：US13119694
申请日：2009-09-16
申请人： Toyohiko Fujisawa , Daesup Hyun , Junji Nakanishi
发明人： Toyohiko Fujisawa , Daesup Hyun , Junji Nakanishi
IPC分类号： C09J183/07 , C09J11/06
CPC分类号： C08L83/04 , C08G77/12 , C08G77/20 , C08L83/00 , C09J183/04
摘要： A liquid die bonding agent comprising (A) an organopolysiloxane that has at least 2 alkenyl groups in one molecule, (B) an organopolysiloxane that has at least 2 silicon-bonded hydrogen atoms in one molecule, (C) a hydrosilylation reaction action catalyst, (D) a hydrosilylation reaction inhibitor, and (E) an organic solvent that can dissolve components (A), (B), and (D), that is liquid, and that has a boiling point of 180° C. to 400° C. Also, the preceding liquid die bonding agent that additionally comprises (F) an organosilicon compound-based adhesion promoter.
摘要翻译：一种液体芯片粘合剂，其包含（A）在一个分子中具有至少2个烯基的有机聚硅氧烷，（B）在一个分子中具有至少2个硅键合的氢原子的有机聚硅氧烷，（C）氢化硅烷化反应作用催化剂，（D）氢化硅烷化反应抑制剂，和（E）能够溶解液体的成分（A），（B）和（D）的沸点为180〜400℃的有机溶剂另外，前述的液体芯片粘合剂还包含（F）基于有机硅化合物的粘合促进剂。

34. 发明授权

US07491937B2 Two-wavelength image sensor picking up both visible and infrared images 有权
标题翻译：双波长图像传感器拾取可见光和红外图像
公开(公告)号：US07491937B2
公开(公告)日：2009-02-17
申请号：US11695302
申请日：2007-04-02
申请人： Junji Nakanishi , Daisuke Takamuro
发明人： Junji Nakanishi , Daisuke Takamuro
IPC分类号： H01L25/00
CPC分类号： G01J5/22 , G01J3/36 , G01J2005/0077 , H01L27/14603 , H01L27/14645 , H01L27/14649 , H04N5/33 , H04N5/332 , H04N5/347 , H04N5/3742
摘要： A 2-wavelength image sensor has a plurality of uniformly dispersedly arranged visible radiation detectors and a plurality of uniformly dispersedly arranged, uncooled infrared radiation detectors, and a single visible radiation detector configures a visible radiation detecting pixel and four series connected infrared radiation detectors configure a thermal infrared radiation detecting pixel. Consequently a visible image can be four times a thermal image in resolution. Furthermore for an infrared image an area increased four times per pixel to receive light can be achieved. As a result the infrared image can be enhanced in temperature resolution.
摘要翻译： 2波长图像传感器具有多个均匀分布布置的可见光辐射检测器和多个均匀分布布置的未冷却的红外辐射探测器，并且单个可见辐射探测器构成可见辐射检测像素和四个串联连接的红外辐射探测器配置热红外辐射检测像素。因此，可见图像可以是分辨率中的热图像的四倍。此外，对于红外图像，可以实现每像素增加四倍以接收光的面积。因此，可以提高红外图像的温度分辨率。

35. 发明授权

US06513680B2 Paste dispensing container 失效
公开(公告)号：US06513680B2
公开(公告)日：2003-02-04
申请号：US09841895
申请日：2001-04-25
申请人： Kazumi Nakayoshi , Hiroki Ishikawa , Ryoto Shima , Junji Nakanishi , Tomoko Kato , Minoru Isshiki , Kimio Yamakawa
发明人： Kazumi Nakayoshi , Hiroki Ishikawa , Ryoto Shima , Junji Nakanishi , Tomoko Kato , Minoru Isshiki , Kimio Yamakawa
IPC分类号： G01F1100
CPC分类号： B65D81/2023 , B65D83/0005
摘要： A paste dispensing container comprising a cylindrical container having positioned therein a piston slidable along the walls of the container, a first end closed with a cap to seal paste within the container, a connecting portion at a second end of the container for connection with a pressurized fluid supply, and a leakage preventing cover having an air orifice covering the second end of the container. The paste dispensing container can be vacuum packaged in a gas-impermeable film for shipping and storage to prevent exposure of the paste contained therein to air.

36. 发明授权

US06372593B1 Method of manufacturing SOI substrate and semiconductor device 失效
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US06372593B1
公开(公告)日：2002-04-16
申请号：US09619579
申请日：2000-07-19
申请人： Nobuyoshi Hattori , Satoshi Yamakawa , Junji Nakanishi
发明人： Nobuyoshi Hattori , Satoshi Yamakawa , Junji Nakanishi
IPC分类号： H01L21331
CPC分类号： H01L21/76256 , H01L27/10873 , H01L27/1203 , Y10S438/933
摘要： First, a silicon germanium single-crystalline layer and a silicon single-crystalline layer are formed on a main surface of a bond wafer by epitaxy. The overall surface of the bond wafer is oxidized for forming a silicon oxide layer. Then, a base wafer is bonded to the bond wafer. The bond wafer and the base wafer bonded to each other are heated for reinforcing adhesion therebetween. Then, the bond wafer is removed by plasma etching with chlorine gas while making the silicon germanium single-crystalline layer serve as a stopper. Thereafter the silicon germanium single-crystalline layer is polished by chemical mechanical polishing to have a thickness suitable for forming a device. Thus implemented is a method of manufacturing an SOI substrate by bonding capable of employing a layer having a crystal state with small irregularity for serving as a stopper having selectivity for single-crystalline silicon and effectively using the stopper as a device forming layer.
摘要翻译：首先，通过外延在接合晶片的主表面上形成硅锗单晶层和硅单晶层。接合晶片的整个表面被氧化以形成氧化硅层。然后，将基底晶片接合到接合晶片。将接合晶片和彼此接合的基底晶片加热，以加强它们之间的粘合。然后，通过用氯气等离子体蚀刻除去接合晶片，同时使硅锗单晶层用作止动器。此后，通过化学机械抛光对硅锗单晶层进行抛光，以具有适于形成器件的厚度。这样实现的是通过接合制造SOI衬底的方法，该SOI衬底可以采用具有小的不规则性的晶体状态的层作为具有对单晶硅的选择性的阻挡层，并且有效地使用该阻挡件作为器件形成层。

37. 发明授权

US5877237A Thermosetting silicone composition 失效
标题翻译：热固性硅酮组合物
公开(公告)号：US5877237A
公开(公告)日：1999-03-02
申请号：US357634
申请日：1994-12-16
申请人： Junji Nakanishi , Toshio Saruyama , Atsushi Togashi
发明人： Junji Nakanishi , Toshio Saruyama , Atsushi Togashi
IPC分类号： C08L83/05 , C08K9/10 , C08L83/04 , C08L83/07 , C08G77/08
CPC分类号： C08K9/10 , C08L83/04 , C08G77/08 , C08G77/12 , C08G77/20 , C08G77/70
摘要： The thermosetting silicone composition of the instant invention is comprised of (a) a diorganopolysiloxane containing alkenyl groups, (b) an organohydrogenpolysiloxane, (c) a platinum catalyst-containing silicone resin fine particle catalyst comprised of (i) a thermoplastic silicone resin containing 5 to 90 mole % PhSiO.sub.3/2 siloxane units and 5 to 20 mole % MeViSiO.sub.2/2 siloxane units, wherein Ph denotes phenyl, Me denotes methyl and Vi denotes vinyl; said resin having a glass transition point of 40.degree. to 70.degree. C. and (ii) 0.05 to 2 wt % as platinum atoms of a platinum catalyst; and (d) a hydrosilation reaction inhibiting compound. The thermosetting silicone compositions have excellent storage stability at about room temperature, and cure at a fast rate when heated.
摘要翻译：本发明的热固性硅氧烷组合物包含（a）含有烯基的二有机聚硅氧烷，（b）有机氢聚硅氧烷，（c）含铂催化剂的有机硅树脂微粒催化剂，其由（i）含有5 至90摩尔％的PhSiO 3/2硅氧烷单元和5至20摩尔％MeViSiO 2/2硅氧烷单元，其中Ph表示苯基，Me表示甲基，Vi表示乙烯基; 所述树脂的玻璃化转变温度为40〜70℃，（ii）为铂催化剂的铂原子为0.05〜2重量％和（d）氢化硅烷化反应抑制化合物。热固性硅酮组合物在约室温下具有优异的储存稳定性，并且在加热时以快速固化。

38. 发明授权

US5300610A Manufactured method of alkoxy radical-containing silicone resin 失效
标题翻译：含有烷氧基的有机硅树脂的制造方法
公开(公告)号：US5300610A
公开(公告)日：1994-04-05
申请号：US13901
申请日：1993-02-05
申请人： Junji Nakanishi , Toshio Saruyama
发明人： Junji Nakanishi , Toshio Saruyama
IPC分类号： C08G77/06 , C08G77/10 , C08G77/18 , C08K5/5419 , C08L83/04
CPC分类号： C08G77/06 , C08G77/18
摘要： The invention provides a method for manufacturing an alkoxy radical-containing silicone resin wherein the molecular weight, viscosity, thermal transition point, and alkoxy radical content can be easily controlled. The method of the instant invention comprises combining under anhydrous conditions, (A) an alkoxysilane represented by the formula R.sup.4.sub.a Si(OR.sup.5).sub.4-a or its partial hydrolysis product wherein R.sup.4 is selected consisting of a monovalent hydrocarbon radical and a monovalent halogenated hydrocarbon radical, R.sup.5 is selected from the group consisting of an alkyl radical containing 1 to 6 carbon atoms, and a has a value of 0 to 3; and (B) an organopolysiloxane or a mixture of organopolysiloxanes selected from the group consisting of organopolysiloxanes that are made of siloxane units selected from the group consisting of R.sup.1 SiO3.sub./2 and R.sup.2 R.sup.3 SiO and mixtures thereof wherein R.sup.1, R.sup.2 and R.sup.3 are independently selected from the group consisting of monovalent hydrocarbon radicals and monovalent halogenated hydrocarbon radicals; followed by heating the mixture of (A) and (B) in the presence of a basic catalyst to perform a reequilibration reaction for said components (A) and (B).
摘要翻译：本发明提供一种制备含烷氧基自由基的有机硅树脂的方法，其中可以容易地控制分子量，粘度，热转变点和烷氧基含量。本发明的方法包括在无水条件下组合（A）由式R4aSi（OR5）4-a表示的烷氧基硅烷或其部分水解产物，其中R4选自一价烃基和一价卤代烃基， R5选自含有1至6个碳原子的烷基，a值为0至3; 和（B）选自有机聚硅氧烷的有机聚硅氧烷或有机聚硅氧烷的混合物，所述有机聚硅氧烷由选自由R 1 SiO 3/2和R 2 R 3 SiO组成的组的硅氧烷单元制成的有机聚硅氧烷及其混合物，其中R 1，R 2和R 3独立地选自由一价烃基和一价卤代烃基组成; 然后在碱性催化剂的存在下加热（A）和（B）的混合物，以对所述组分（A）和（B）进行重新平衡反应。

39. 发明授权

US5208841A Solid state imaging element with bus breakage detector 失效
标题翻译：具有总线断路检测器的固态成像元件
公开(公告)号：US5208841A
公开(公告)日：1993-05-04
申请号：US772887
申请日：1991-10-08
申请人： Junji Nakanishi
发明人： Junji Nakanishi
IPC分类号： H01L27/146 , H01L27/148 , H04N5/33 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H04N17/00
CPC分类号： H04N5/374 , H04N17/002 , H04N5/367 , H04N5/33
摘要： A solid state imaging element includes a plurality of photodetectors arranged in a two-dimensional array on a semiconductor substrate, first and second charge transfer circuits for transferring signal charges in a vertical direction and a horizontal direction, respectively, a plurality of transfer gates for controlling charge transfer from the photodetectors to the first charge transfer circuit, a scanner for controlling switching of the transfer gates, a plurality of bus lines connecting the transfer gates with the scanner, and a bus line breakage checking circuit. The bus line breakage checking circuit includes a plurality of transistors connected in series with respective bus lines, a test pad connected with the bus lines through the transistors, and a voltage applying pad for applying a voltage to control switching of the transistors. Therefore, the breakage of a bus line can be detected in a wafer test without actually operating the element, whereby time and money are saved.

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