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31. 发明申请

US20060012669A1 Laser scanning optical unit used in image forming apparatus 审中-公开
标题翻译：用于成像设备的激光扫描光学单元
公开(公告)号：US20060012669A1
公开(公告)日：2006-01-19
申请号：US11017636
申请日：2004-12-22
申请人： Hajime Taniguchi , Kenji Takeshita
发明人： Hajime Taniguchi , Kenji Takeshita
IPC分类号： B41J15/14
CPC分类号： G03G15/326 , G03G15/0435 , G03G2215/0404
摘要： A image forming apparatus includes a plurality of photoreceptors and laser scanning optical units corresponding to the photoreceptors. Each of laser scanning optical units includes a laser light source, a deflector disposed so as to be rotatable about an axis parallel to the conveyance direction of a transfer belt, a first mirror that reflects a laser beam deflected for scanning by the deflector in a direction opposite to the direction of disposition of the photoreceptor, in a direction parallel to the conveyance direction of the transfer belt and a second mirror that reflects the laser beam reflected by the first mirror, toward the photoreceptor.
摘要翻译：图像形成装置包括对应于感光体的多个感光体和激光扫描光学单元。每个激光扫描光学单元包括激光光源，偏转器，其设置成能够绕平行于转印带的输送方向的轴线旋转;第一反射镜，其反射被偏转器偏转的激光束，与感光体的配置方向相反，在平行于转印带的输送方向的方向和将由第一反射镜反射的激光束反射的第二反射镜朝向感光体。

32. 发明授权

US06461974B1 High temperature tungsten etching process 有权
标题翻译：高温钨蚀刻工艺
公开(公告)号：US06461974B1
公开(公告)日：2002-10-08
申请号：US09680320
申请日：2000-10-06
申请人： Tuqiang Ni , Kenji Takeshita , Thomas Choi
发明人： Tuqiang Ni , Kenji Takeshita , Thomas Choi
IPC分类号： H01L21302
CPC分类号： H01L21/32139 , C23F4/00 , H01L21/31116 , H01L21/32136
摘要： A method of etching a tungsten film, comprising the steps of supporting a semiconductor substrate having a tungsten film thereon on a substrate support in an interior of a plasma etcher, supplying process gas to the interior of the plasma etcher, energizing the process gas into a plasma state, etching the tungsten film by exposing the substrate to the plasma, and heating the substrate to a temperature of at least 100° C. during the etching step. The etching step can include a low temperature main etch below 100° C. followed by a high temperature overetch above 100° C., the process gas including a fluorine containing gas during the main etch and a chlorine containing gas during the overetch. The tungsten film can be located over a dielectric film which serves as a stop layer during the etching step. The tungsten film can be pure tungsten and the dielectric layer can be a silicon oxide film having a thickness of 200 Å or less.
摘要翻译：一种蚀刻钨膜的方法，包括以下步骤：在等离子体蚀刻器内部的衬底支撑件上支撑其上具有钨膜的半导体衬底，将工艺气体供给到等离子体蚀刻器的内部，将工艺气体激励成等离子体状态，通过将衬底暴露于等离子体来蚀刻钨膜，并且在蚀刻步骤期间将衬底加热至至少100℃的温度。蚀刻步骤可以包括低于100℃的低温主蚀刻，然后高于100℃的高温过蚀刻，在主蚀刻期间工艺气体包括含氟气体，在过蚀刻期间包括含氯气体。钨膜可以位于在蚀刻步骤期间用作停止层的电介质膜上。钨膜可以是纯钨，并且电介质层可以是厚度为或以下的氧化硅膜。

33. 发明授权

US08936855B2 Wood fiber board and manufacturing method thereof 有权
标题翻译：木纤维板及其制造方法
公开(公告)号：US08936855B2
公开(公告)日：2015-01-20
申请号：US13272335
申请日：2011-10-13
申请人： Makoto Kimuro , Hiromasa Sinkai , Kenji Takeshita
发明人： Makoto Kimuro , Hiromasa Sinkai , Kenji Takeshita
IPC分类号： B32B23/04
CPC分类号： D21J1/18 , Y10T428/249925 , Y10T428/31986
摘要： Provided is a wood fiber board, and a production method thereof, such that the wood fiber board contains no phenolic resin, is simple to produce, and exhibits flexural strength and water resistance comparable to those of wood fiber boards produced by incorporating a phenolic resin. The wood fiber board of the present invention has only wood fibers; a polyacrylamide resin being an amphoteric-ionic resin, which has monomers having cationic groups and monomers having anionic groups at a ratio of 7:3 to 3:7 on a mole ratio basis, and which has a molecular weight ranging from 800,000 to 3,000,000; and cationic paraffin. A method of producing a wood fiber board of the present invention involves preparing a slurry to a solids concentration ranging from 2 to 3 wt % and pH of 3 to 5, and adding only the polyacrylamide resin and paraffin to the slurry.
摘要翻译：本发明提供一种木纤维板及其制造方法，使得木质纤维板不含酚醛树脂，制造简单，并且具有与通过掺入酚醛树脂制造的木纤维板相当的抗弯强度和耐水性。本发明的木纤维板仅具有木纤维; 具有阳离子基团的单体的聚丙烯酰胺树脂和摩尔比为7:3〜3:7的阴离子性基团的单体，分子量为80万〜300万; 和阳离子石蜡。本发明的木纤维板的制造方法包括将浆料制备成固体浓度为2〜3重量％，pH为3〜5，仅将聚丙烯酰胺树脂和石蜡加入到浆料中。

34. 发明授权

US08801892B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US08801892B2
公开(公告)日：2014-08-12
申请号：US12055212
申请日：2008-03-25
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

35. 发明授权

US08114780B2 Method for dielectric material removal between conductive lines 有权
标题翻译：介电材料去除导线之间的方法
公开(公告)号：US08114780B2
公开(公告)日：2012-02-14
申请号：US12413159
申请日：2009-03-27
申请人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
发明人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76825 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/7682 , H01L21/76826
摘要： A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
摘要翻译：提供了一种在金属触点之间去除碳掺杂的氧化硅的方法。通过去除碳掺杂剂将碳掺杂的氧化硅层转化为氧化硅层。相对于碳掺杂的氧化硅和在金属触点之间形成凹陷的金属触点，氧化硅的转换层被选择性地湿蚀刻。

36. 发明申请

US20100248485A1 METHOD FOR DIELECTRIC MATERIAL REMOVAL BETWEEN CONDUCTIVE LINES 有权
标题翻译：导电线之间的电介质材料去除方法
公开(公告)号：US20100248485A1
公开(公告)日：2010-09-30
申请号：US12413159
申请日：2009-03-27
申请人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
发明人： Mayumi Block , Robert C. Hefty , Stephen M. Sirard , Kenji Takeshita
IPC分类号： H01L21/306
CPC分类号： H01L21/76825 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/7682 , H01L21/76826
摘要： A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.
摘要翻译：提供了一种在金属触点之间去除碳掺杂的氧化硅的方法。通过去除碳掺杂剂将碳掺杂的氧化硅层转化为氧化硅层。相对于碳掺杂的氧化硅和在金属触点之间形成凹陷的金属触点，氧化硅的转换层被选择性地湿蚀刻。

37. 发明申请

US20090068767A1 TUNING VIA FACET WITH MINIMAL RIE LAG 审中-公开
标题翻译：通过最小的RIE LAG调整
公开(公告)号：US20090068767A1
公开(公告)日：2009-03-12
申请号：US11854038
申请日：2007-09-12
申请人： Stephen Sirard , Mikio Nagai , Kenji Takeshita , Sridharan Srivatsan , Jungmin Ko
发明人： Stephen Sirard , Mikio Nagai , Kenji Takeshita , Sridharan Srivatsan , Jungmin Ko
IPC分类号： H01L21/00
CPC分类号： H01L21/76804 , H01L21/76807 , H01L22/12 , H01L22/20
摘要： A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.
摘要翻译：提供了一种设计蚀刻配方的方法。执行蚀刻，包括提供具有设定的卤素与碳的比例的蚀刻气体，从蚀刻气体形成等离子体，以及蚀刻通过过孔的沟槽。测量通过面。卤素与碳的比例根据测量的通孔面重置，其中如果测量太多的小面积，则卤素与碳的比例将增加，并且如果测量的面积太小，则卤素与碳的比率降低。重复前面的步骤，直到获得所需的刻面数量。

38. 发明申请

US20070199658A1 Integrated capacitive and inductive power sources for a plasma etching chamber 有权
标题翻译：用于等离子体蚀刻室的集成电容和感应电源
公开(公告)号：US20070199658A1
公开(公告)日：2007-08-30
申请号：US11363703
申请日：2006-02-27
申请人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
发明人： Rajinder Dhindsa , Mukund Srinivasan , Kenji Takeshita , Alexei Marakhtanov , Andreas Fischer
IPC分类号： B08B6/00 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32862 , H01J37/32091 , H01J37/321 , H01J37/32642
摘要： Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.
摘要翻译：概括地说，本发明通过提供改进的室清洁机构来满足这些需要。本发明还可以用于提供附加的旋钮来调整蚀刻工艺。在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

39. 发明申请

US20050130435A1 Method of preventing damage to porous low-k materials during resist stripping 有权
标题翻译：防止剥离过程中破坏多孔低k材料的方法
公开(公告)号：US20050130435A1
公开(公告)日：2005-06-16
申请号：US10738280
申请日：2003-12-16
申请人： Rao Annapragada , Kenji Takeshita
发明人： Rao Annapragada , Kenji Takeshita
IPC分类号： H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method of forming a feature in a porous low-K dielectric layer is provided. A porous low-K dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the porous low-K dielectric layer. A feature is etched into the porous low-K dielectric layer. A protective layer is deposited over the feature after the etching the feature. The patterned photoresist mask is stripped, so that part of the protective layer is removed, where protective walls formed from the protective layer remain in the feature.
摘要翻译：提供了在多孔低K电介质层中形成特征的方法。将多孔低K电介质层放置在衬底上。将图案化的光致抗蚀剂掩模放置在多孔低K电介质层上。将特征蚀刻到多孔低K电介质层中。在蚀刻特征之后，在特征上沉积保护层。剥去图案化的光致抗蚀剂掩模，从而去除保护层的一部分，其中从保护层形成的保护壁保留在特征中。

40. 发明授权

US06531029B1 Vacuum plasma processor apparatus and method 有权
标题翻译：真空等离子体处理装置及方法
公开(公告)号：US06531029B1
公开(公告)日：2003-03-11
申请号：US09607326
申请日：2000-06-30
申请人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
发明人： Tuqiang Ni , Kenji Takeshita , Tom Choi , Frank Y. Lin
IPC分类号： H01L213065
CPC分类号： H01J37/321
摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic; fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.
摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过提供电磁而将腔室中的可电离气体激发到等离子体; 通过室顶部的电介质窗到等离子体的场。两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

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