专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20110095298A1 Electronic Paper 有权
标题翻译：电子纸
公开(公告)号：US20110095298A1
公开(公告)日：2011-04-28
申请号：US12986443
申请日：2011-01-07
申请人： Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada
发明人： Yoshiaki Oikawa , Shingo Eguchi , Mitsuo Mashiyama , Masatoshi Kataniwa , Hironobu Shoji , Masataka Nakada
IPC分类号： H01L33/48
CPC分类号： G02F1/167 , G02F2201/50 , G02F2201/503 , G02F2202/22
摘要： An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
摘要翻译：本发明的目的是增加电子纸对外部应力的阻力。通过在包括第一结构体的第一绝缘膜之间提供包括集成电路部分，第一电极，第二电极和带电粒子的层的元件形成层来增加对外部应力的抵抗性，其中第一纤维体浸渍有第一有机树脂，第二绝缘膜包括第二结构体，其中第二纤维体浸渍有第二有机树脂。

32. 发明申请

US20100072548A1 Semiconductor Device and Method for Manufacturing the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100072548A1
公开(公告)日：2010-03-25
申请号：US12560965
申请日：2009-09-16
申请人： Shingo Eguchi , Yoshiaki Oikawa
发明人： Shingo Eguchi , Yoshiaki Oikawa
IPC分类号： H01L29/786 , H01L21/336 , H01L21/78
CPC分类号： H01L29/786 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L27/1266 , H01L27/13
摘要： A semiconductor device in which defects in characteristics due to electrostatic discharge is reduced and a method for manufacturing the semiconductor device are provided. The semiconductor device has at least one of these structures: (1) a structure in which a first and second insulating films are in direct contact with each other in a peripheral region of a circuit portion, (2) a structure in which a first and second insulators are closely attached to each other, and (3) a structure in which a first conductive layer and a second conductive layer are provided on outer surfaces of the first insulator and the second insulator, respectively, and electrical conduction between the first and second conductive layers is achieved at a side surface of the peripheral region. Note that the conduction at the side surface can be achieved by cutting a plurality of semiconductor devices into separate semiconductor devices.
摘要翻译：减少了由于静电放电引起的特性缺陷的半导体器件以及半导体器件的制造方法。半导体器件具有这些结构中的至少一个：（1）第一和第二绝缘膜在电路部分的周边区域中彼此直接接触的结构，（2）一种结构，其中第一和第二绝缘体彼此紧密连接，和（3）分别在第一绝缘体和第二绝缘体的外表面上设置第一导电层和第二导电层的结构，并且第一和第二绝缘体之间的导电在周边区域的侧面实现导电层。注意，可以通过将多个半导体器件切割成单独的半导体器件来实现侧表面的导电。

33. 发明授权

US08659025B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08659025B2
公开(公告)日：2014-02-25
申请号：US13613215
申请日：2012-09-13
申请人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
发明人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
IPC分类号： H01L27/15
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译：制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。栅电极具有层叠结构。根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

34. 发明授权

US08133749B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08133749B2
公开(公告)日：2012-03-13
申请号：US12429201
申请日：2009-04-24
申请人： Shingo Eguchi
发明人： Shingo Eguchi
IPC分类号： H01L21/84
CPC分类号： H01L23/562 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/293 , H01L23/295 , H01L23/3114 , H01L2221/6835 , H01L2924/0002 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00
摘要： In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.
摘要翻译：在夹在一对第一耐冲击层和第二耐冲击层之间的半导体集成电路中，在半导体集成电路和第二耐冲击层之间设置有冲击扩散层。通过针对外部应力设置抗冲击层和用于扩散冲击的冲击扩散层，减小了施加到每单位面积的半导体集成电路的力，从而保护了半导体集成电路。冲击扩散层优选具有低的弹性模量和高的断裂模量。

35. 发明授权

US07771314B2 Controller of work vehicle 有权
标题翻译：工作车辆控制器
公开(公告)号：US07771314B2
公开(公告)日：2010-08-10
申请号：US11659294
申请日：2005-12-02
申请人： Shingo Eguchi , Shuji Shiozaki , Takeshi Ouchida , Takafumi Yamada , Shigemi Hidaka
发明人： Shingo Eguchi , Shuji Shiozaki , Takeshi Ouchida , Takafumi Yamada , Shigemi Hidaka
IPC分类号： B60W10/04
CPC分类号： B60T7/02 , B60W10/02 , B60W10/103 , B60W10/184 , B60W30/18045 , B60W2510/104 , B60W2540/10 , B60Y2200/221 , F02D11/02 , F02D29/02 , F16D31/02 , F16D48/02 , F16D48/066 , F16D2500/1112 , F16D2500/3069 , F16D2500/30825 , F16D2500/3101 , F16D2500/3102 , F16D2500/3111 , F16D2500/3112 , F16D2500/3144 , F16D2500/3146 , F16D2500/3166 , F16D2500/5075 , F16D2500/70235 , F16D2500/7027 , F16D2500/70454 , F16H47/02 , F16H59/06 , F16H59/44 , F16H59/54 , F16H61/0246 , F16H2059/0234 , F16H2059/065 , G05G1/46 , G05G5/24 , Y10T477/6203 , Y10T477/677 , Y10T477/679
摘要： A control apparatus for a tractor or wheel loader includes a speed change sensor that detects the step-on amount of a speed change pedal, an actuator that regulates a swash plate angle of a hydraulic pump based on the detection value of the speed change sensor, a transmission output unit rotation sensor that detects the revolution speed of an output shalt, and a control unit. When the speed change pedal is not stepped on, a braking force is applied to travel wheels and both of a forward drive clutch and a reverse drive clutch are disengaged. When a transmission drive output detected with the transmission output unit rotation sensor is not more than a fixed forward or reverse drive switching speed, either the forward drive clutch or the reverse drive clutch is engaged as the speed change pedal is stepped on.
摘要翻译：用于拖拉机或轮式装载机的控制装置包括检测变速踏板的踏入量的变速传感器，基于变速传感器的检测值来调节液压泵的斜盘角度的致动器，检测输出转速的变速器输出单元旋转传感器和控制单元。当没有踩踏速度踏板时，对行驶轮施加制动力，并且前进驱动离合器和反向驱动离合器都被分离。当利用变速器输出单元旋转传感器检测到的变速器驱动输出不大于固定的正向或反向驱动切换速度时，随着变速踏板被踩踏，前进驱动离合器或反向驱动离合器被接合。

36. 发明申请

US20090017599A1 Method for manufacturing semiconductor device 有权
公开(公告)号：US20090017599A1
公开(公告)日：2009-01-15
申请号：US12232049
申请日：2008-09-10
申请人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
发明人： Shingo Eguchi , Yohei Monma , Atsuhiro Tani , Misako Hirosue , Kenichi Hashimoto , Yasuharu Hosaka
IPC分类号： H01L21/30
CPC分类号： H01L21/67132 , H01L21/02244 , H01L21/02252 , H01L21/67092 , H01L21/707 , H01L27/1266
摘要： An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated.

37. 发明授权

US07456911B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07456911B2
公开(公告)日：2008-11-25
申请号：US09925486
申请日：2001-08-10
申请人： Shingo Eguchi , Rumo Satake
发明人： Shingo Eguchi , Rumo Satake
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , G02F1/134336 , G02F1/136213 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627
摘要： An unstable factor that the orientation of liquid crystal is fixed and left after a drive power source is turned off is reduced, preferable display quality is realized, and long term reliability is improved. After the drive power source is turned off, in order to block an electric field produced by charges left in a first electrode (485), a second electrode 492 is provided to overlap the first electrode. The first electrode is overlapped at 70% or more of its area with the second electrode. In addition, when the first electrode is used as an electrode composing a retaining capacitor 505, the retaining capacitor is overlapped at 90% or more of its area with the second electrode.
摘要翻译：在驱动电源关闭之后液晶的取向固定留下的不稳定因素降低，实现优选的显示质量，提高长期可靠性。在驱动电源关闭之后，为了阻止留在第一电极（485）中的电荷产生的电场，提供第二电极492以与第一电极重叠。第一电极与第二电极重叠在其面积的70％以上。此外，当第一电极用作构成保持电容器505的电极时，保持电容器与第二电极重叠在其面积的90％以上。

38. 发明申请

US20070126959A1 Liquid Crystal Display Device 有权
标题翻译：液晶显示装置
公开(公告)号：US20070126959A1
公开(公告)日：2007-06-07
申请号：US11672992
申请日：2007-02-09
申请人： Shingo Eguchi , Yuriko Tsuji
发明人： Shingo Eguchi , Yuriko Tsuji
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133504 , G02F2001/13685
摘要： With an object of providing a transflective type liquid crystal display device having a transparent electrode of an uneven structure formed without particularly increasing steps, in fabricating the transflective type liquid crystal display device, a amorphous transparent conductive film is formed on a substrate, a crystalline portion is formed in the amorphous transparent conductive film to thereby form the transparent conductive film including the crystalline portion, a amorphous portion is removed at a film surface of the transparent conductive film including the crystalline portion to thereby form the transparent conductive film having an uneven shape formed by a remaining crystalline portion at a film surface and a reflecting electrode having the uneven shape is formed by forming a reflective conductive film above the transparent electrode having the uneven shape.
摘要翻译：本发明的目的是提供一种具有不特别增加步骤形成的具有不平坦结构的透明电极的透反射型液晶显示装置，在半透射型液晶显示装置的制造中，在基板上形成非晶体透明导电膜，结晶部分形成在非晶透明导电膜中，从而形成包含结晶部分的透明导电膜，在包含晶体部分的透明导电膜的膜表面处去除非晶部分，从而形成具有不均匀形状的透明导电膜通过在膜表面上的剩余结晶部分和具有不平坦形状的反射电极通过在具有不平坦形状的透明电极上形成反射导电膜而形成。

39. 发明申请

US20060214168A1 Display device and manufacturing method thereof 有权
公开(公告)号：US20060214168A1
公开(公告)日：2006-09-28
申请号：US11436131
申请日：2006-05-18
申请人： Kengo Akimoto , Noriko Miyagi , Shingo Eguchi
发明人： Kengo Akimoto , Noriko Miyagi , Shingo Eguchi
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/3244 , H01L51/5215
摘要： It is an object of the present invention to provide a display device that has a structure of an electrode where a residue of a transparent conductive film is not generated when a weak acid solution is used in etching, which is particularly appropriate for an electrode of a light-emitting element. A display device according to the present invention has an electrode that has a laminated structure of laminated transparent conductive films, and the electrode has a first transparent conductive film as the bottom layer, where no residue is generated when a weak acid solution is used in etching, and a second transparent conductive film as the top layer, which has a work function of 5.0 eV or more.

40. 发明授权

US06828586B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06828586B2
公开(公告)日：2004-12-07
申请号：US10793031
申请日：2004-03-05
申请人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
发明人： Etsuko Fujimoto , Satoshi Murakami , Shunpei Yamazaki , Shingo Eguchi
IPC分类号： H01L2904
CPC分类号： H01L29/78624 , H01L27/1222 , H01L27/127 , H01L29/42384 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gale electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
摘要翻译：制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。大风电极具有层压结构。根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式