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31. 发明授权

US4562483A Transmission interruption signal detection system 失效
标题翻译：传输中断信号检测系统
公开(公告)号：US4562483A
公开(公告)日：1985-12-31
申请号：US73291
申请日：1979-09-07
申请人： Hiroshi Kurokawa , Sunji Kurokawa , Yuichi Saito
发明人： Hiroshi Kurokawa , Sunji Kurokawa , Yuichi Saito
IPC分类号： H04N1/32 , H01F5/04 , H04N1/327
CPC分类号： H04N1/327
摘要： In a transmission interruption signal detection system of a facsimile system transmitting image information from transmission apparatus to reception apparatus and producing a transmission interruption signal of a predetermined frequency and sending the same continuously for a predetermined period of time from the reception apparatus to the transmission apparatus when the reception apparatus is hung up, a hybrid transformer apparatus is provided, and transmission of the image information and reception of the transmission interruption signal are performed through the hybrid transformer apparatus, and signals having the predetermined frequency are extracted from signals obtained during transmission of the image information through the hybrid transformer apparatus and when the generation of the extracted signals continues for the predetermined period of time or longer, the transmission interruption detection signal is produced.
摘要翻译：在传输系统的传输中断信号检测系统中，从发送装置发送图像信息到接收装置，并产生预定频率的传输中断信号，并且在从接收装置到发送装置的连续预定时间内发送相同信号时，接收装置被挂起，提供混合变压器装置，通过混合变压器装置执行图像信息的传输和传输中断信号的接收，并且从传输中获得的信号中提取具有预定频率的信号通过混合变压器装置的图像信息，并且当提取的信号的产生持续预定时间段或更长时间时，产生传输中断检测信号。

32. 发明授权

US4471093A Elastomer composition comprising a blend of SBR rubbers 失效
标题翻译：包含SBR橡胶的混合物的弹性体组合物
公开(公告)号：US4471093A
公开(公告)日：1984-09-11
申请号：US470506
申请日：1983-02-28
申请人： Hiroshi Furukawa , Yuichi Saito , Keisaku Yamamoto , Akio Imai , Nobuyuki Yoshida , Yasushi Okamoto
发明人： Hiroshi Furukawa , Yuichi Saito , Keisaku Yamamoto , Akio Imai , Nobuyuki Yoshida , Yasushi Okamoto
IPC分类号： B60C1/00 , C08L9/06 , C08L7/00
CPC分类号： C08L7/00 , B60C1/0016 , C08L9/06
摘要： A rubber composition having improved rolling resistance and wet grip characteristics with improved processability, abrasion resistance and durability which contains as a rubber component a mixture of a high molecular weight styrene-butadiene rubber having a specific microstructure and a low molecular weight styrene-butadiene and/or butadiene rubber having a specific microstructure. The composition is particularly suitable for use in tread of tires.
摘要翻译：一种具有改善的滚动阻力和湿抓地性能的橡胶组合物，具有改进的加工性，耐磨性和耐久性，其包含作为橡胶组分的具有特定微结构的高分子量苯乙烯 - 丁二烯橡胶和低分子量苯乙烯 - 丁二烯和/ 或具有特定微结构的丁二烯橡胶。该组合物特别适用于轮胎胎面。

33. 发明授权

US4089682A Cobalt-base sintered alloy 失效
标题翻译：钴基烧结合金
公开(公告)号：US4089682A
公开(公告)日：1978-05-16
申请号：US744783
申请日：1976-11-24
申请人： Yuichi Saito , Osamu Mayama
发明人： Yuichi Saito , Osamu Mayama
IPC分类号： B22F9/20 , C22C1/04 , C22C19/07 , B22F3/00
CPC分类号： C22C1/0433
摘要： A cobalt-base sintered alloy which comprises: being manufactured from a reduced powder by the conventional powder metallurgy process with said reduced powder as a material powder, said reduced powder being prepared by simultaneously reducing a mixed powder consisting of powders of oxides of elements constituting said sintered alloy with a carbon powder added and mixed therein, and said reduced powder consisting of powders of said constituent elements and powders of carbides thereof; and consisting essentially of, in weight percentage:Chromium from 15.0 to 35.0%Tungsten from 3.0 to 19.0%Nickel from 0.2 to 12.0%Molybdenum from 0.1 to 15.0%Iron from 0.05 to 5.00%Titanium from 0.05 to 2.00%Silicon from 0.05 to 1.50%Manganese from 0.05 to 1.00%Carbon from 0.2 to 3.5%AndThe balance cobalt and incidental impurities.The above-mentioned cobalt-base sintered alloy, also containing, in weight percentage, from 0.05 to 1.00% boron.These cobalt-base sintered alloys provide a relatively wide range of sintering temperatures applicable in the manufacture thereof, and have furthermore a high sintered density of at least 95% of the theoretical value and are excellent in machinability, heat resistance, wear resistance and corrosion resistance.
摘要翻译：一种钴基烧结合金，其特征在于，包括：通过常规粉末冶金方法用所述还原粉末作为原料粉末，由还原粉末制造，所述还原粉末通过同时还原由构成所述的粉末的元素的氧化物粉末组成的混合粉末烧结合金，其中加入和混合碳粉，所述还原粉末由所述组成元素的粉末和其碳化物粉末组成; 并基本上由重量百分比组成：

34. 发明授权

US09022189B2 Cask cushioning body 有权
标题翻译：酒柜缓冲体
公开(公告)号：US09022189B2
公开(公告)日：2015-05-05
申请号：US13701073
申请日：2011-06-28
申请人： Yuichi Saito , Junichi Kishimoto , Tadashi Kimura , Akio Kitada , Hiroki Tamaki
发明人： Yuichi Saito , Junichi Kishimoto , Tadashi Kimura , Akio Kitada , Hiroki Tamaki
IPC分类号： F16F7/12 , G21F5/08 , G21F9/36
CPC分类号： G21F5/08 , G21F9/36
摘要： A cask cushioning body includes an end-surface side member (2) in which a plurality of plates (21, 22) made of steel are formed at a distance between plate surfaces of the plates (21, 22) that face each other, and in which the plate surfaces of the plates (21, 22) are arranged along an end surface (100a) of a cask (100), and a circumferential-surface side member (3) that forms a cylindrical body (31) made of steel, one end of which is connected to a periphery of the end-surface side member (2), and that is arranged along an end-portion outer-circumferential surface (100b), wherein an impact absorber (4) that absorbs an impact by deforming is provided outside of the end-surface side member (2) and the circumferential-surface side member (3).
摘要翻译：一种桶式缓冲体，包括端面侧构件（2），在该端面侧构件（2）上形成有多个彼此相对的板（21,22）的板表面之间的距离的由钢制成的板（21,22），以及其特征在于，所述板（21,22）的板面沿着桶（100）的端面（100a）配置，并且形成由钢制成的圆筒体（31）的周面侧部件（3）其一端与端面侧构件（2）的周围连接，并且沿着端部外周面（100b）配置，其中，吸收冲击的冲击吸收体（4）在端面侧构件（2）和周面侧构件（3）的外侧设置有变形。

35. 发明授权

US08731129B2 Cask buffer body 有权
标题翻译：酒桶缓冲体
公开(公告)号：US08731129B2
公开(公告)日：2014-05-20
申请号：US10569226
申请日：2005-08-10
申请人： Hiroki Tamaki , Yuichi Saito , Kiminobu Hojo , Tadashi Kimura , Hiroshi Shimizu , Akio Kitada
发明人： Hiroki Tamaki , Yuichi Saito , Kiminobu Hojo , Tadashi Kimura , Hiroshi Shimizu , Akio Kitada
IPC分类号： G21C19/00
CPC分类号： G21F5/08 , G21Y2002/201 , G21Y2002/304 , G21Y2004/303
摘要： A first shock absorber group is obtained by combining a plurality of shock absorber blocks, absorbs a shock in a direction parallel to an end surface of a cask, consisting of a first material. A second shock absorber group absorbs the shock in a direction perpendicular to or oblique with respect to the end surface, consisting of a second material having a weaker compressive strength than the first material. A third shock absorber group absorbs the shock in a direction perpendicular to the end surface, consisting of a third material having a weaker compressive strength than the second material. A space is provided at least in the first shock absorber group.
摘要翻译：通过组合多个减震器块，在由第一材料构成的平行于桶的端面的方向吸收冲击来获得第一减震器组。第二减震器组在垂直于或相对于端面倾斜的方向上吸收冲击，由具有比第一材料更弱的抗压强度的第二材料组成。第三减震器组件在垂直于端面的方向上吸收冲击，由具有比第二材料更弱的抗压强度的第三材料组成。至少在第一减震器组中设置空间。

36. 发明申请

US20110003417A1 Active matrix substrate, method of making the substrate, and display device 有权
标题翻译：有源矩阵基板，制造基板的方法和显示装置
公开(公告)号：US20110003417A1
公开(公告)日：2011-01-06
申请号：US12807215
申请日：2010-08-31
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L21/336 , H01L33/02
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
摘要翻译：有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。栅极线形成在基底基板上。数据线形成在栅极线上。每条数据线与绝缘膜相交，跨越所有栅极线。薄膜晶体管形成在基底基板上。每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

37. 发明授权

US07858415B2 Production methods of pattern thin film, semiconductor element, and circuit substrate, and resist material, semiconductor element, and circuit substrate 有权
标题翻译：图案薄膜，半导体元件和电路基板以及抗蚀剂材料，半导体元件和电路基板的制造方法
公开(公告)号：US07858415B2
公开(公告)日：2010-12-28
申请号：US11918398
申请日：2006-01-31
申请人： Yuichi Saito , Takeshi Hara
发明人： Yuichi Saito , Takeshi Hara
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , H01L27/1288 , H01L27/1292
摘要： The present invention provides production methods of a pattern thin film, a semiconductor element and a circuit substrate, capable of eliminating the number of photolithography processes needed for patterning; and a semiconductor element, a circuit substrate, and an electron device obtained by the production methods. The production method of the pattern thin film of the present invention is a production method of a pattern thin film, comprising the steps of: forming a first resist pattern film on a thin film formed on a substrate; forming a second resist pattern film; patterning the thin film using at least the second resist pattern film, wherein in the step of forming the second resist pattern film, a fluid resist material or an organic solvent is applied on a groove of a bank pattern formed using the first resist pattern film.
摘要翻译：本发明提供了能够消除图案化所需的光刻处理次数的图案薄膜，半导体元件和电路基板的制造方法; 以及通过制造方法得到的半导体元件，电路基板和电子元件。本发明的图案薄膜的制造方法是图案薄膜的制造方法，包括以下工序：在形成于基板上的薄膜上形成第一抗蚀剂图案膜; 形成第二抗蚀剂图案膜; 使用至少第二抗蚀剂图案膜对薄膜进行图案化，其中在形成第二抗蚀剂图案膜的步骤中，将流体抗蚀剂材料或有机溶剂施加到使用第一抗蚀剂图案膜形成的堤形图案的凹槽上。

38. 发明申请

US20100167443A1 Active matrix substrate, method of making the substrate, and display device 有权
公开(公告)号：US20100167443A1
公开(公告)日：2010-07-01
申请号：US12658555
申请日：2010-02-11
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L33/00
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

39. 发明授权

US07696516B2 Active matrix substrate, method of making the substrate, and display device 有权
公开(公告)号：US07696516B2
公开(公告)日：2010-04-13
申请号：US12283893
申请日：2008-09-16
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

40. 发明授权

US07459723B2 Active matrix substrate, method of making the substrate, and display device 有权
标题翻译：有源矩阵基板，制造基板的方法和显示装置
公开(公告)号：US07459723B2
公开(公告)日：2008-12-02
申请号：US11450810
申请日：2006-06-08
申请人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
发明人： Yoshihiro Okada , Yuichi Saito , Shinya Yamakawa , Atsushi Ban , Masaya Okamoto , Hiroyuki Ohgami
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/1362 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.
摘要翻译：有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。栅极线形成在基底基板上。数据线形成在栅极线上。每条数据线都插入绝缘膜，与所有栅极线交叉。薄膜晶体管形成在基底基板上。每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

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