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31. 发明授权

US08865349B2 Method of producing positive electrode active material and nonaqueous electrolyte battery using the same 有权
标题翻译：使用该正极活性物质的非水电解质电池的制造方法
公开(公告)号：US08865349B2
公开(公告)日：2014-10-21
申请号：US12067739
申请日：2006-09-20
申请人： Shigeto Okada , Tomoyuki Shiratsuchi , Tomoko Iwanaga , Jun-ichi Yamaki , Shinji Iizuka , Osamu Omae , Kumiko Sueto , Takeshi Shimada
发明人： Shigeto Okada , Tomoyuki Shiratsuchi , Tomoko Iwanaga , Jun-ichi Yamaki , Shinji Iizuka , Osamu Omae , Kumiko Sueto , Takeshi Shimada
IPC分类号： H01M4/58 , H01M4/50 , H01M10/40 , H01M4/62 , C01B25/45 , H01M4/36 , H01M4/136 , H01M10/052
CPC分类号： H01M4/5825 , C01B25/45 , H01M4/136 , H01M4/366 , H01M4/625 , H01M10/052 , Y02E60/122 , Y02P70/54 , Y02T10/7011
摘要： The present invention provides a positive electrode active material that has rate characteristics suitable for nonaqueous electrolyte batteries and particularly nonaqueous electrolyte secondary batteries, a method by which this positive electrode active material can be easily mass produced, and a high-performance nonaqueous electrolyte battery that has a positive electrode active material obtained by this method.The present invention relates to a method of producing a positive electrode active material, the method comprising a step of mixing a carbon source with lithium manganese phosphate LiMnPO4 or a compound LiMn1-xMxPO4 (where, 0≦x
摘要翻译：本发明提供一种正极活性物质，其具有适用于非水电解质电池，特别是非水电解质二次电池的速率特性，可以容易地大规模生产该正极活性物质的方法，以及高性能非水电解质电池，其具有通过该方法得到的正极活性物质。本发明涉及一种正极活性物质的制造方法，其特征在于，包括将碳源与磷酸锰锂LiMnPO 4或化合物LiMn1-xMxPO4（其中0≤n1≤x≤1且M为至少1 作为固溶体组合物的含有磷酸锂锰LiMnPO 4的Co，Ni，Fe，Zn，Cu，Ti，Sn，Zr，V和Al的金属元素，在惰性气体下热处理得到的混合物大气层。

32. 发明授权

US08670382B2 Control apparatus, wireless communication apparatus, communication system, and control method 有权
标题翻译：控制装置，无线通信装置，通信系统及控制方法
公开(公告)号：US08670382B2
公开(公告)日：2014-03-11
申请号：US12914586
申请日：2010-10-28
申请人： Shinya Hatakeyama , Soichi Kato , Kiyohisa Hoshino , Takeshi Shimada
发明人： Shinya Hatakeyama , Soichi Kato , Kiyohisa Hoshino , Takeshi Shimada
IPC分类号： H04W4/00 , H04L12/28 , H04W36/00 , H04B7/00
CPC分类号： H04L1/1874 , H04L1/06 , H04L1/1809 , H04L1/1835 , H04L2001/0093 , H04L2001/0097 , H04W92/12
摘要： A mobile communication system has a mobile terminal, basestations, and a Radio Network Controller (RNC). In the case where drop of a frame occurs during data communication in Iub/Iur (between the basestations and the RNC), the RNC executes retransmission of an EDCH FP frame between the RNC and the basestations by transmitting a TN frame to the basestations to repair the drop of the frame without executing retransmission with the terminal device.
摘要翻译：移动通信系统具有移动终端，基站和无线网络控制器（RNC）。在Iub / Iur（基站和RNC之间）的数据通信期间发生帧的丢弃的情况下，RNC通过向基站发送TN帧来执行RNC与基站之间的EDCH FP帧的重传以修复帧的丢弃而不用终端设备执行重传。

33. 发明授权

US08506834B2 Method for dry etching Al2O3 film 有权
标题翻译：干法蚀刻Al2O3薄膜的方法
公开(公告)号：US08506834B2
公开(公告)日：2013-08-13
申请号：US12022207
申请日：2008-01-30
申请人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
发明人： Kentaro Yamada , Takeshi Shimada , Kotaro Fujimoto
IPC分类号： C23F1/00 , B44C1/22
CPC分类号： C23F4/00 , G11B5/3163
摘要： The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).
摘要翻译：本发明提供了一种用于处理具有形成在用于磁头的厚Al 2 O 3膜上的Ru膜的晶片的干蚀刻方法，其能够实现高选择性。在设置在NiCr膜15上的Al 2 O 3膜14，Ru膜13，SiO 2膜12和抗蚀剂掩模11的晶片的蚀刻中，使用含有Cl 2和O 2的处理气体等离子体蚀刻Ru膜13 然后，使用Ru膜13作为掩模，使用主要含有BCl 3的气体混合物，还含有Cl 2和Ar（图1（d））的等离子体来蚀刻Al 2 O 3膜14。

34. 发明授权

US08067325B2 Semiconductor ceramic composition 有权
标题翻译：半导体陶瓷组合物
公开(公告)号：US08067325B2
公开(公告)日：2011-11-29
申请号：US12280738
申请日：2007-02-27
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： C04B35/00
CPC分类号： H01C7/025 , C01G23/002 , C01G23/006 , C01P2004/03 , C01P2004/62 , C01P2006/32 , C01P2006/40 , C04B35/4682 , C04B35/62675 , C04B35/62685 , C04B35/62818 , C04B2235/3201 , C04B2235/3208 , C04B2235/3224 , C04B2235/3227 , C04B2235/3234 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/608 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/6584 , C04B2235/85 , C04B2235/9661
摘要： It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well as of controlling room temperature resistivity and having an excellent jump characteristic. Since the semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na has a crystal in which a central part and an outer shell part of a crystal grain are different from each other in composition, the composition is capable of improving control of room temperature resistivity and a jump characteristic, and therefore it is optimum as a material for a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, and the like.
摘要翻译：旨在提供不含Pb的半导体陶瓷组合物，其能够将居里温带向正方向移动以及控制室温电阻率并具有优异的跳跃特性。由于BaTiO 3的Ba的一部分被Bi-Na取代的半导体陶瓷组合物具有其结晶的中心部分和外壳部分的组成彼此不同的结晶，所以组合物能够改善控制室温电阻率和跳跃特性，因此作为PTC热敏电阻，PTC加热器，PTC开关，温度检测器等的材料是最佳的。

35. 发明授权

US07993965B2 Process for producing semiconductive porcelain composition/electrode assembly 有权
标题翻译：生产半导体陶瓷组合物/电极组件的方法
公开(公告)号：US07993965B2
公开(公告)日：2011-08-09
申请号：US12920377
申请日：2009-03-12
申请人： Kentaro Ino , Takeshi Shimada
发明人： Kentaro Ino , Takeshi Shimada
IPC分类号： H01L21/00
CPC分类号： C04B35/4682 , C01G23/003 , C01G29/006 , C01G33/006 , C01P2002/52 , C01P2004/03 , C01P2006/40 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3234 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/608 , C04B2235/656 , C04B2235/6567 , C04B2235/6584 , C04B2235/662 , C04B2235/85 , H01C7/02 , H01C7/023
摘要： A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 Ω·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary. Also, there is a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO3 is substituted with Bi—Na and which has a P-type semiconductive component at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100° C. to 600° C. for 0.5 hour to 24 hours.
摘要翻译：一种半导体瓷组合物/电极组件，其室温电阻率低于100Ω·cm·cm以下，并且由于对于半导体陶瓷组合物的通电而随时间的推移而变化，其中BaTiO 3的Ba的一部分被Bi-Na取代，并且在晶界处具有P型半导体成分。此外，还有一种生产半导体瓷组合物/电极组件的方法，其中电极连接到半导体陶瓷组合物中，其中BaTiO 3的Ba的一部分被Bi-Na取代，并且其中具有P型半导体组分晶界，该方法包括将电极连接到半导体陶瓷组合物上，然后在100℃至600℃的温度下进行0.5小时至24小时的热处理。

36. 发明授权

US07964118B2 Positive electrode active material and method of producing the same and nonaqueous electrolyte battery having positive electrode containing positive electrode active material 有权
标题翻译：正极活性物质及其制造方法以及具有正极的正极活性物质的非水电解质电池
公开(公告)号：US07964118B2
公开(公告)日：2011-06-21
申请号：US12067782
申请日：2006-09-20
申请人： Shinji Iizuka , Osamu Omae , Kumiko Sueto , Takeshi Shimada , Shigeto Okada , Tomoko Iwanaga , Tomoyuki Shiratsuchi , Jun-ichi Yamaki
发明人： Shinji Iizuka , Osamu Omae , Kumiko Sueto , Takeshi Shimada , Shigeto Okada , Tomoko Iwanaga , Tomoyuki Shiratsuchi , Jun-ichi Yamaki
IPC分类号： H01B1/08 , C01B25/45 , H01M4/02
CPC分类号： H01M4/5825 , C01B25/45 , H01M4/136 , H01M4/366 , H01M4/625 , H01M10/052 , H01M2004/021
摘要： The present invention provides an olivine-type positive electrode active material that is an inexpensive and very safe positive electrode active material that also exhibits excellent battery properties even at high energy densities. The present invention also provides a method of producing this olivine-type positive electrode active material and a nonaqueous electrolyte battery that has a positive electrode that contains this olivine-type positive electrode active material. The present invention relates to a positive electrode active material that comprises an olivine-type lithium manganese phosphate compound represented by the following general formula (1) LixMnyMaPO4 (1) (in the formula, 0
摘要翻译：本发明提供一种廉价且非常安全的正极活性物质的橄榄石型正极活性物质，即使在高能量密度下也显示优异的电池特性。本发明还提供一种生产该橄榄石型正极活性物质和含有该橄榄石型正极活性物质的正极的非水电解质电池的方法。本发明涉及一种正极活性物质，其包含由以下通式（1）表示的橄榄石型磷酸锰锂化合物：LixMnyMaPO4（1）（式中，0

37. 发明申请

US20110011848A1 PROCESS FOR PRODUCING SEMICONDUCTIVE PORCELAIN COMPOSITION AND HEATER EMPLOYING SEMICONDUCTIVE PORCELAIN COMPOSITION 失效
标题翻译：生产半导体组合物的方法和采用半导体组合物的加热器
公开(公告)号：US20110011848A1
公开(公告)日：2011-01-20
申请号：US12920366
申请日：2009-03-12
申请人： Takeshi Shimada , Kentaro Ino , Toshiki Kida
发明人： Takeshi Shimada , Kentaro Ino , Toshiki Kida
IPC分类号： H05B3/10 , C04B35/468 , E04B1/74 , C04B35/64
CPC分类号： H01C7/025 , C04B35/46 , C04B35/4682 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/6583 , C04B2235/663 , H01C17/06533
摘要： To improve jump characteristic of BaTiO3—(Bi1/2Na1/2)TiO3 material.There is provided a process for producing a semiconductive porcelain composition in which a part of Ba is substituted with Bi—Na, the process including a step of preparing a (BaQ)TiO3 calcined powder (in which Q is a semiconductor dopant), a step of preparing a (BiNa)TiO3 calcined powder, a step of mixing the (BaQ)TiO3 calcined powder and the (BiNa)TiO3 calcined powder, a step of molding and sintering the mixed calcined powder, and a step of heat-treating the obtained sintered body at 600° C. or lower; and a PCT heater employing the element prepared by the above steps.
摘要翻译：改善BaTiO3-（Bi1 / 2Na1 / 2）TiO3材料的跳跃特性。提供一种制备其中一部分Ba被Bi-Na取代的半导体陶瓷组合物的方法，该方法包括制备（BaQ）TiO 3煅烧粉末（其中Q是半导体掺杂剂）的步骤，步骤制备（BiNa）TiO 3煅烧粉末的步骤，将（BaQ）TiO 3煅烧粉末和（BiNa）TiO 3煅烧粉末混合的步骤，对混合的煅烧粉末进行成型和烧结的步骤，以及对获得的烧结体在600℃以下; 以及使用通过上述步骤制备的元件的PCT加热器。

38. 发明授权

US07732361B2 Dielectric porcelain composition for use in electronic devices 失效
标题翻译：用于电子设备的介电瓷组合物
公开(公告)号：US07732361B2
公开(公告)日：2010-06-08
申请号：US12063483
申请日：2005-08-11
申请人： Takeshi Shimada
发明人： Takeshi Shimada
IPC分类号： C04B35/495
CPC分类号： H01B3/12 , C04B35/495 , C04B35/62695 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6585 , H05K1/0306
摘要： The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient τf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3—Y(BazSr1-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient τf can be controlled in a negative direction and the τf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.
摘要翻译：本发明提供一种用于电子器件的电介质瓷组合物，其可以以特别是负方向的温度系数τf进行控制，并且可以在保持高Qf值和高介电常数的同时缩短烧结时间。根据本发明，在具有由XBa（Mg1 / 3Ta2 / 3）O3-Y（BazSr1-z）（Ga1 / 2Ta1 / 2）O3表示的组成式的常规组合物中，当Mg被Ni取代以形成特定结构时，可以将温度系数τf控制在负方向，并且可以将τf控制在0.80〜-4.45ppm /℃的范围内，同时保持高Qf值和高介电常数，并且即使在烧结期间，基本上50小时已经基本上需要减少到25小时，可以获得类似的Qf值。

39. 发明申请

US20100075825A1 SEMICONDUCTOR PORCELAIN COMPOSITION AND METHOD OF PRODUCING THE SAME 失效
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20100075825A1
公开(公告)日：2010-03-25
申请号：US12626700
申请日：2009-11-27
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/62635 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/96 , H01C7/025 , H01C17/06533 , H01G4/1227
摘要： A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.
摘要翻译：通过分别制备（BaR）TiO 3（R为La，Dy，Eu，Gd或Y）的组合物和（BiNa）TiO 3的组合物并在（a）的温度下煅烧（BaR）TiO 3的组成）来制备半导体陶瓷组合物的温度为900℃至1300℃，并在700℃至950℃下煅烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。类似地，通过分别制备（BaM）TiO 3（M为Nb，Ta或Sb）和（BiNa）TiO 3组成的组合物，并在900℃的温度下煅烧（BaM）TiO 3的组成，制备半导体瓷组合物 ℃至1300℃，并在700℃至950℃的温度下焙烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。

40. 发明授权

US07662235B2 Method of cleaning etching apparatus 有权
标题翻译：清洗蚀刻装置的方法
公开(公告)号：US07662235B2
公开(公告)日：2010-02-16
申请号：US11203092
申请日：2005-08-15
申请人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
发明人： Atsushi Yoshida , Kotaro Fujimoto , Takeshi Shimada
IPC分类号： B08B3/12 , B08B6/00
CPC分类号： B08B7/0035
摘要： To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition.Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).
摘要翻译：为了提供一种用于金属膜的蚀刻装置的清洁方法，其有效地去除在蚀刻处理室中沉积的蚀刻残留物，确保蚀刻性能的再现性，并且使蚀刻处理室保持在低灰尘发射状态。每次蚀刻具有金属膜的一个工件（S1），通过用虚设衬底（S2）代替工件来清洁真空室的内部，使用氧（O 2）和四氟化碳（O 2）进行等离子体处理的第一步骤 CF4）以除去碳基沉积堆（S3），并且使用三氯化硼（BCl 3）和氯（Cl 2）进行等离子体处理的第二步骤，以除去第一步骤中不能除去的残留物和蚀刻残留物的金属膜（S4）。

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