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31. 发明授权

US07989273B2 Semiconductor substrate and manufacturing method of semiconductor device 有权
标题翻译：半导体衬底及半导体器件的制造方法
公开(公告)号：US07989273B2
公开(公告)日：2011-08-02
申请号：US12155052
申请日：2008-05-29
申请人： Shunpei Yamazaki , Mitsuhiro Ichijo , Makoto Furuno , Takashi Ohtsuki , Kenichi Okazaki , Tetsuhiro Tanaka , Seiji Yasumoto
发明人： Shunpei Yamazaki , Mitsuhiro Ichijo , Makoto Furuno , Takashi Ohtsuki , Kenichi Okazaki , Tetsuhiro Tanaka , Seiji Yasumoto
IPC分类号： H01L21/336
CPC分类号： H01L21/76254 , H01L21/84
摘要： To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at. % and hydrogen at 1 at. % to 20 at. %, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH4 and N2O as source gases is in contact with the single-crystal semiconductor layer.
摘要翻译：为了提供包括适用于实际使用的结晶半导体层的半导体衬底，以及使用与半导体层的材料不同的材料用于支撑衬底，以及使用该半导体衬底的半导体器件。半导体基板包括形成接合面的接合层，由含氮的绝缘材料形成的阻挡层，由包含小于20at的氮的绝缘材料形成的凸版层。％和氢气在1 at。％至20 at。％，以及含有卤素的绝缘层，在支撑基板和单晶半导体层之间。半导体器件至少部分地包括上述结构，并且通过使用SiH 4和N 2 O作为源气体的微波等离子体CVD方法形成的栅极绝缘层与单晶半导体层接触。

32. 发明授权

US07539731B2 Method for automatically sending messages at desired appropriate timings and an automatic message sending service system 失效
标题翻译：以所需适当的时间自动发送消息的方法和自动消息发送服务系统
公开(公告)号：US07539731B2
公开(公告)日：2009-05-26
申请号：US10889095
申请日：2004-07-13
申请人： Hirohisa Yamamoto , Kenichi Okazaki , Tsutomu Iitsuka
发明人： Hirohisa Yamamoto , Kenichi Okazaki , Tsutomu Iitsuka
IPC分类号： G06F15/16
CPC分类号： H04L67/325 , H04L51/043 , H04L51/14 , H04L67/2838 , H04L67/2842 , H04L69/329
摘要： A sender of a message uses a sender's portable telephone device to register, by way of a communication network, to a service agent: user's information, communication partner information, sending conditions, and a message. The service agent monitors whether the sending conditions are met, and when the sending conditions have been satisfied, executes processing to send the entered message to the receiver's portable telephone device of the communication partner that has been registered. The sending conditions include conditions relating to presence information that the communication partner can always access by way of a communication network through the communication partner's own communication terminal.
摘要翻译：消息的发送者使用发送者的便携式电话设备通过通信网络向服务代理注册用户信息，通信伙伴信息，发送条件和消息。服务代理监视是否满足发送条件，并且当发送条件已满足时，执行将输入的消息发送到已经注册的通信伙伴的接收者的便携式电话设备的处理。发送条件包括与通信对方可以通过通信伙伴自己的通信终端通过通信网络总是访问的存在信息相关的条件。

33. 发明申请

US20050013291A1 Method for automatically sending messages at desired appropriate timings and an automatic message sending service system 失效
标题翻译：以所需适当的时间自动发送消息的方法和自动消息发送服务系统
公开(公告)号：US20050013291A1
公开(公告)日：2005-01-20
申请号：US10889095
申请日：2004-07-13
申请人： Hirohisa Yamamoto , Kenichi Okazaki , Tsutomu Iitsuka
发明人： Hirohisa Yamamoto , Kenichi Okazaki , Tsutomu Iitsuka
IPC分类号： G06F13/00 , H04L12/58 , H04L29/08 , H04M3/42 , H04M3/432 , H04M11/00 , H04Q7/38 , H04L12/66
CPC分类号： H04L67/325 , H04L51/043 , H04L51/14 , H04L67/2838 , H04L67/2842 , H04L69/329
摘要： A sender of a message uses a sender's portable telephone device to register, by way of a communication network, to a service agent: user's information, communication partner information, sending conditions, and a message. The service agent monitors whether the sending conditions are met, and when the sending conditions have been satisfied, executes processing to send the entered message to the receiver's portable telephone device of the communication partner that has been registered. The sending conditions include conditions relating to presence information that the communication partner can always access by way of a communication network through the communication partner's own communication terminal.
摘要翻译：消息的发送者使用发送者的便携式电话设备通过通信网络向服务代理注册用户信息，通信伙伴信息，发送条件和消息。服务代理监视是否满足发送条件，并且当发送条件已满足时，执行将输入的消息发送到已经注册的通信伙伴的接收者的便携式电话设备的处理。发送条件包括与通信对方可以通过通信伙伴自己的通信终端通过通信网络总是访问的存在信息相关的条件。

34. 发明授权

US4814590A Method and apparatus for transmitting data 失效
标题翻译：用于传输数据的方法和装置
公开(公告)号：US4814590A
公开(公告)日：1989-03-21
申请号：US23240
申请日：1987-03-09
申请人： Kenichi Okazaki
发明人： Kenichi Okazaki
IPC分类号： G06F13/00 , G06F13/42 , G06Q40/00 , G06Q40/02 , H04L29/08 , G06F15/30
CPC分类号： G06F13/4226
摘要： Data transmission is performed between a central processing unit and terminal apparatuses in an electronic computer system for use in financial facilities such as banks or the like. When the terminal apparatus receives a series of data blocks which are transmitted from the central processing unit, the terminal apparatus stores a flag to instruct whether the transmission of the next data block from the central processing unit is requested while the received data block is being processed or after the present received data block is processed. This flag is added to each of a plurality of display image plane formats stored in the terminal apparatus.
摘要翻译：在中央处理单元和电子计算机系统中的终端设备之间执行数据传输，用于诸如银行等的金融设施中。当终端装置接收到从中央处理单元发送的一系列数据块时，终端装置存储一个标志，用于指示在处理接收到的数据块时是否请求来自中央处理单元的下一个数据块的传输或者在当前接收的数据块被处理之后。该标志被添加到存储在终端装置中的多个显示图像平面格式的每一个。

35. 发明授权

US4698755A Printer control system and method of designating functions of printer 失效
标题翻译：打印机控制系统和打印机功能的指定方法
公开(公告)号：US4698755A
公开(公告)日：1987-10-06
申请号：US751590
申请日：1985-07-03
申请人： Kenichi Okazaki , Kunio Morimoto , Kazumi Sawano , Masami Aoki
发明人： Kenichi Okazaki , Kunio Morimoto , Kazumi Sawano , Masami Aoki
IPC分类号： G06F3/12 , B41J3/44 , B41J29/38 , G06K15/00 , G01D15/00
CPC分类号： B41J3/44 , Y10S347/90
摘要： A printer control system including a printer and a control unit for controlling the printer is disclosed. The printer function designating information which is used to designate the functions, which vary in accordance with the kind of a job to be done, of the printer is stored in a memory in the control unit. When a printing operation of the printer is started, the function designating information is outputted from the memory, transmitted from the control unit to the printer and stored temporarily in a memory provided in the printer. Various kinds of operations are carried out in accordance with a control code transmitted from the control unit to the printer, and an operation for a designated job is carried out with reference to the function designating information. The designation of functions include the designation of the magnetic recording density of a printing medium having magnetic stripes, and the designation of the function of operation keys for controlling the feeding and discharge of the printing medium.
摘要翻译：公开了一种包括打印机和用于控制打印机的控制单元的打印机控制系统。用于指定根据要完成的作业的种类而变化的功能的打印机功能指定信息存储在控制单元中的存储器中。当打印机的打印操作开始时，功能指定信息从存储器输出，从控制单元发送到打印机，并临时存储在设置在打印机中的存储器中。根据从控制单元发送到打印机的控制代码执行各种操作，并且参考功能指定信息执行指定作业的操作。功能的指定包括具有磁条的打印介质的磁记录密度的指定以及用于控制打印介质的进给和排出的操作键的功能的指定。

36. 发明授权

US09659968B2 Display device comprising a metal oxide semiconductor channel and a specified insulating layer arrangement 有权
公开(公告)号：US09659968B2
公开(公告)日：2017-05-23
申请号：US14244419
申请日：2014-04-03
申请人： Junichi Koezuka , Masahiro Katayama , Yukinori Shima , Kenichi Okazaki , Takuya Matsuo , Shigeyasu Mori , Yosuke Kanzaki , Hiroshi Matsukizono
发明人： Junichi Koezuka , Masahiro Katayama , Yukinori Shima , Kenichi Okazaki , Takuya Matsuo , Shigeyasu Mori , Yosuke Kanzaki , Hiroshi Matsukizono
IPC分类号： H01L27/12 , H01L23/00 , H01L23/31
CPC分类号： H01L27/1225 , H01L23/3121 , H01L23/564 , H01L27/1248 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

37. 发明授权

US09614095B2 Semiconductor device 有权
公开(公告)号：US09614095B2
公开(公告)日：2017-04-04
申请号：US13568451
申请日：2012-08-07
申请人： Kenichi Okazaki , Masahiro Watanabe , Mitsuo Mashiyama
发明人： Kenichi Okazaki , Masahiro Watanabe , Mitsuo Mashiyama
IPC分类号： H01L29/78 , H01L29/786
CPC分类号： H01L29/7869
摘要： An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.

38. 发明授权

US09196743B2 Field effect device with oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的场效应器件
公开(公告)号：US09196743B2
公开(公告)日：2015-11-24
申请号：US13860855
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869
摘要： Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.
摘要翻译：提供了抑制氧化物半导体膜的端部区域中的寄生通道的产生的半导体装置。半导体器件包括栅电极，氧化物半导体膜，源电极和漏极，以及形成在氧化物半导体膜中的沟道区。沟道区形成在源电极的第一侧表面和与第一侧表面相对的漏电极的第二侧表面之间。氧化物半导体膜具有不与栅电极重叠的端部区域。不与栅电极重叠的端部区域位于最靠近第一侧表面的一端的第一区域和最靠近第二侧表面的一端的第二区域之间。

39. 发明授权

US08785926B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08785926B2
公开(公告)日：2014-07-22
申请号：US13860879
申请日：2013-04-11
申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
发明人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Yosuke Kanzaki , Hiroshi Matsukizono , Yoshitaka Yamamoto
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/78696
摘要： The semiconductor conductor device includes a gate electrode 106, an oxide semiconductor film 110, a source electrode 114a and a drain electrode 114b, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface 214a of the source electrode and a second side surface 214b of the drain electrode opposite to the first side surface 214a. The oxide semiconductor film has a side surface which overlaps with the gate electrode, which has a first high resistance region positioned between a first region 206a that is the nearest to one end 314a of the first side surface 214a and a second region 206b that is the nearest to one end 314b of the second side surface 214b. The first high resistance region has a corrugated side surface or the like.
摘要翻译：半导体导体器件包括栅电极106，氧化物半导体膜110，源极114a和漏电极114b以及形成在氧化物半导体膜中的沟道区。沟道区形成在源电极的第一侧表面214a和与第一侧表面214a相对的漏电极的第二侧表面214b之间。氧化物半导体膜具有与栅电极重叠的侧面，该侧面具有位于最靠近第一侧面214a的一端314a的第一区域206a和位于第一侧面214a的一端314a的第一区域206a之间的第一高电阻区域，最靠近第二侧表面214b的一端314b。第一高电阻区域具有波纹状的侧面等。

40. 发明申请

US20130270555A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130270555A1
公开(公告)日：2013-10-17
申请号：US13861587
申请日：2013-04-12
申请人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
发明人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜在X射线衍射测定中具有在31°附近的旋转角2θ处的峰值。

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