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31. 发明授权

US07491613B2 Line element and method of manufacturing the line element 有权
标题翻译：线元素和线元素的制造方法
公开(公告)号：US07491613B2
公开(公告)日：2009-02-17
申请号：US10513145
申请日：2003-05-02
申请人： Yasuhiko Kasama , Satoshi Fujimoto , Kenji Omote
发明人： Yasuhiko Kasama , Satoshi Fujimoto , Kenji Omote
IPC分类号： H01L21/336
CPC分类号： H01L51/057 , B82Y10/00 , H01L27/10873 , H01L27/10897 , H01L27/11 , H01L27/11517 , H01L29/0657 , H01L51/0048 , H01L51/0052
摘要： An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the longitudinal direction. An element characterized by that a cross section having a plurality of areas forming a circuit is formed continuously or intermittently in the longitudinal direction.
摘要翻译：提供能够制造具有塑性或柔性的任何形状的各种装置而不受形状限制的元件及其制造方法。一种元件，其特征在于，电路元件在纵向方向上连续地或间断地形成。一种元件，其特征在于，具有形成电路的多个区域的横截面在纵向上连续地或间断地形成。

32. 发明申请

US20080296510A1 Ion Implantation System and Ion Implantation System 审中-公开
标题翻译：离子注入系统和离子注入系统
公开(公告)号：US20080296510A1
公开(公告)日：2008-12-04
申请号：US10585245
申请日：2005-01-06
申请人： Yasuhiko Kasama , Kenji Omote , Kuniyoshi Yokoh
发明人： Yasuhiko Kasama , Kenji Omote , Kuniyoshi Yokoh
IPC分类号： H01J27/02 , A61N5/00
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/152 , C23C14/0605 , C23C14/48 , H01J37/32412 , H01L51/0046 , H01M8/1016 , H01M2300/0091 , Y02E10/549 , Y02P70/521 , Y02P70/56
摘要： It is devised to transport plasma including charged particles made of containment target atom ions and charged particles of a polarity opposite to that of the containment target atom ions, up to an empty fullerene film on a deposition-assistance substrate by a uniform magnetic field, and to give acceleration energies to the containment target atoms by a bias voltage applied to the deposition-assistance substrate, thereby implanting the containment target atoms into the fullerene film. Since attractive forces act between the charged particles constituting the plasma so that the plasma is not diverged, it becomes possible to achieve a high density ion implantation to improve a yield of containing-fullerene even in ion implantation with a low energy.
摘要翻译：设计用于将等离子体输送到包含目标原子离子的带电粒子和与容纳靶原子离子的极性相反的带电粒子，直到均匀磁场在沉积辅助基底上的空的富勒烯膜，通过施加到沉积辅助衬底的偏置电压给容纳目标原子加速能量，从而将容纳目标原子注入到富勒烯膜中。由于吸引力作用在构成等离子体的带电粒子之间，使得等离子体不发散，所以即使在低能量的离子注入中，也可以实现高密度离子注入以提高含有富勒烯的产率。

33. 发明申请

US20070295935A1 Separators for Alkali Metal Doped Fullerenes, Method for Separating Alkali Metals and Compounds Thereof from Fullerenes, Processes for Purification and Production of Alkali Metal Doped Fullerenes, and System Therefor 审中-公开
标题翻译：碱金属掺杂富勒烯的分离器，从富勒烯分离碱金属及其化合物的方法，碱金属掺杂富勒烯的纯化和生产方法及其系统
公开(公告)号：US20070295935A1
公开(公告)日：2007-12-27
申请号：US11667060
申请日：2005-11-15
申请人： Yasuhiko Kasama , Kenji Omote , Yoshinori Sibata , Fuyuko Yamashita
发明人： Yasuhiko Kasama , Kenji Omote , Yoshinori Sibata , Fuyuko Yamashita
IPC分类号： C01B31/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , C01B32/152
摘要： Provided are a process for removing an alkali metal from a sooty residue by a easy and safe method and a process for production and purification in high purity by preliminarily enhancing the content rate of alkali metal doped fullerenes utilizing a certain organic solvent as the separator. The alkali metal that doesn't react with fullerenes and compounds thereof are removed by immersing the sooty residue prepared by the plasma method or the arc discharge method in aqueous solvent and stirring it (S100), and are collected as residue. The residue is immersed in a separator, for example, toluene (S101) and stirring is carried out (S102). Then, centrifugal separation and the like are carried out to separate the solution and the residue (S103). The content rate of the alkali metal doped fullerenes in the residue are preliminarily enhanced by repeatedly carrying out the steps S101 to S103 for the residue. The alkali metal doped fullerenes can be purified in high purity and produced without complicated operations by applying liquid chromatography to the residue in which the content rate of the alkali metal doped fullerenes is enhanced (S107).
摘要翻译：本发明提供了一种通过简单且安全的方法除去碱金属的方法，以及通过使用某种有机溶剂作为隔膜预先提高掺杂了碱金属的富勒烯的含量，从而高纯度地生产和纯化的方法。通过将通过等离子体法或电弧放电法制备的煤烟渣浸入水性溶剂中并搅拌，除去不与富勒烯及其化合物反应的碱金属（S100），作为残渣收集。将残余物浸入分离器中，例如甲苯（S101），并进行搅拌（S102）。然后，进行离心分离等分离溶液和残渣（S103）。残留物中的碱金属掺杂的富勒烯的含有率通过反复进行残留物的步骤S101〜S103而被预先提高。碱金属掺杂的富勒烯可以以高纯度纯化并且通过向其中增加碱金属掺杂的富勒烯的含量比例增加的残余物进行液相色谱法而无需复杂的操作（S107）。

34. 发明申请

US20070009405A1 Method and apparatus for producing gas atom containing fullerene, and gas atom containing fullerene 审中-公开
标题翻译：含有富勒烯的气体原子的产生方法和装置以及含有富勒烯的气体原子
公开(公告)号：US20070009405A1
公开(公告)日：2007-01-11
申请号：US10552709
申请日：2004-04-07
申请人： Rikizo Hatakeyama , Takamichi Hirata , Yasuhiko Kasama , Kenji Omote
发明人： Rikizo Hatakeyama , Takamichi Hirata , Yasuhiko Kasama , Kenji Omote
IPC分类号： C01B31/02 , B01J19/12
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/15 , C01B32/152 , H05H1/46 , H05H2001/4652 , H05H2001/4697
摘要： A method and apparatus for enabling the production of gas containing fullerenes at a high yield. The apparatus includes a plasma generating chamber with a gas inlet where a gas containing atom to be doped is introduced via the gas inlet into the plasma generating chamber to be converted into a plasma there, and an evacuated vessel which is so constructed as to communicate with the plasma generating chamber to produce a plasma flow and to introduce fullerenes into the plasma flow. The apparatus further includes control elements for controlling the energy of electrons in plasma in the evacuated vessel towards the plasma generating chamber, and a potential body for controlling the velocity of ions derived from the gas atom so as to bind the ions to fullerene ions to cause thereby endohedral fullerens to be formed.
摘要翻译：一种能够以高产率生产含有富勒烯的气体的方法和装置。该装置包括具有气体入口的等离子体发生室，其中待掺杂原子的气体经由气体入口引入等离子体发生室，以在其中转化为等离子体;以及抽真空容器，其被构造成与等离子体产生室以产生等离子体流并将富勒烯引入等离子体流中。该装置还包括控制元件，用于控制抽空容器中等离子体中等离子体中等离子体的能量朝向等离子体产生室，以及用于控制源自气体原子的离子速度以将离子与富勒烯离子结合的势能从而形成内含的富勒烯。

35. 再颁专利

USRE42420E1 Liquid feed nozzle, wet treatment apparatus and wet treatment method 失效
标题翻译：液体进料喷嘴，湿式处理设备和湿法处理方法
公开(公告)号：USRE42420E1
公开(公告)日：2011-06-07
申请号：US11043890
申请日：2005-01-26
申请人： Kenichi Mitsumori , Yasuhiko Kasama , Akira Abe , Oh Eui Yeol , Tadahiro Ohmi , Takashi Imaoka , Masayuki Toda
发明人： Kenichi Mitsumori , Yasuhiko Kasama , Akira Abe , Oh Eui Yeol , Tadahiro Ohmi , Takashi Imaoka , Masayuki Toda
IPC分类号： B08B3/04 , B08B3/12
CPC分类号： H01L21/6708 , B08B3/022 , B08B3/041 , B08B3/123 , B08B2203/0288 , H01L21/67051
摘要： The wet treatment liquid feed nozzle of the invention comprises an introducing path having an introducing port, a discharging path having a discharging port, a crossing section formed by causing the introducing path and the discharging path to cross at the other ends thereof, a nozzle assembly having an opening section opening to an object to be treated, provided at the crossing section, and pressure control means, for controlling the difference between the pressure of the wet treatment liquid in contact with the object to be treated and the atmospheric pressure provided at least on the discharging path side so that the wet treatment liquid having been in contact with the object to be treated via the opening section does not flow to outside the discharging path.
摘要翻译：本发明的湿式处理液体进料喷嘴包括一个具有一个引入口的引入通道，一个具有排出口的排出通道，一个通过使引入通道和排放通道在其另一端处交叉而形成的交叉部分，一个喷嘴组件具有开口部分，设置在交叉部分处的待处理对象;以及压力控制装置，用于控制与待处理物体接触的湿处理液体的压力与至少提供的大气压力之间的差异在放电路径侧，使得经由开口部分与待处理物体接触的湿处理液体不会流到排出路径的外部。

36. 发明授权

US06270618B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06270618B1
公开(公告)日：2001-08-07
申请号：US09205800
申请日：1998-12-04
申请人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
发明人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
IPC分类号： C23F102
CPC分类号： H01J37/32174 , C23C16/4405 , H01J37/32082
摘要： A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber without using a bellows. The plasma processing apparatus includes a resonance circuit (band eliminator) for causing series resonance with a microwave circuit formed of at least a susceptor electrode and a processing chamber in order to trap plasma between a plasma excitation electrode and the susceptor electrode when the surface of a workpiece placed on the susceptor electrode is processed by plasma generated between the plasma excitation electrode and the susceptor electrode, which are provided inside the processing chamber; and for causing parallel resonance with the microwave circuit in order to diffuse plasma inside the processing chamber when performing plasma cleaning.
摘要翻译：提供一种等离子体处理装置，其不需要根据所使用的频率来更换带除器，其能够执行腔室清洁而不更换谐振电路，并且能够在不使用腔室内进行等离子体清洁室内一个波纹管。等离子体处理装置包括用于与由至少一个基座电极和一个处理室形成的微波电路进行串联谐振的谐振电路（去波器），以便在等离子体激发电极和基座电极之间捕获等离子体时放置在基座电极上的工件通过设置在处理室内部的等离子体激发电极和基座电极之间产生的等离子体进行处理; 并且用于与微波电路并联谐振，以便在进行等离子体清洗时在等离子体清洗中扩散处理室内的等离子体。

37. 发明授权

US06155202A Plasma processing apparatus, matching box, and feeder 失效
标题翻译：等离子体处理装置，配套箱和进料器
公开(公告)号：US06155202A
公开(公告)日：2000-12-05
申请号：US199944
申请日：1998-11-25
申请人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiro Takeda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
发明人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiro Takeda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
IPC分类号： H01J37/32 , C23C16/00 , H01J7/24 , H01J21/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.
摘要翻译：在等离子体处理装置中，在高频电源和等离子体激励电极之间插入用于实现高频电源和等离子体激励电极之间的阻抗匹配的匹配电路中，形成调谐电容器的两个电极之一也用作等离子体激发电极。或者，在等离子体处理装置中，由导电构件制成的壳体的侧壁，并且容纳插入在高频电源和等离子体激励电极之间的匹配电路，以实现高频电源与高频电源之间的阻抗匹配等离子体激励电极和用于通过匹配电路从高频电源向等离子体激励电极提供高频电力的馈线形成为不与馈线并联。

38. 发明授权

US5888357A Apparatus and method for producing ionic water and system and method for producing electrolytic ionic water 失效
标题翻译：用于生产离子水的设备和方法及其制备方法和电解离子水的制备方法
公开(公告)号：US5888357A
公开(公告)日：1999-03-30
申请号：US756741
申请日：1996-11-26
申请人： Kenichi Mitsumori , Yasuhiko Kasama , Koji Yamanaka , Takashi Imaoka , Tadahiro Ohmi
发明人： Kenichi Mitsumori , Yasuhiko Kasama , Koji Yamanaka , Takashi Imaoka , Tadahiro Ohmi
IPC分类号： B01D61/44 , B01F3/04 , C02F1/36 , C02F1/46 , C02F1/461 , C01B53/00 , B08B5/04 , B08B6/00
CPC分类号： C02F1/36 , C02F1/4618 , C02F2201/46115 , C02F2201/4619
摘要： The present invention provides an apparatus and a method for producing ionic water which are capable of producing ionic water containing a low concentration of electrolyte with high reproducibility. The present invention also provides an apparatus and a method for producing electrolytic ionic water capable of producing electrolytic ionic water having stable characteristics. The ionic water producing apparatus has at least a gas-liquid mixing device for mixing raw water and a gas, and an ultrasonic exciting device for applying ultrasonic waves to the gas-liquid mixture obtained by the gas-liquid mixing device to generate ions.
摘要翻译：本发明提供了能够以高再现性产生含有低浓度电解质的离子水的离子水的制造装置和方法。本发明还提供一种能够生产具有稳定特性的电解离子水的电解离子水的设备和方法。离子水生成装置至少具有用于混合原料水和气体的气液混合装置，以及用于对由气液混合装置获得的气液混合物施加超声波以产生离子的超声波激发装置。

39. 发明授权

US5609737A Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering 失效
标题翻译：使用单反应室进行化学气相沉积和溅射的膜制造方法
公开(公告)号：US5609737A
公开(公告)日：1997-03-11
申请号：US289713
申请日：1994-08-12
申请人： Hirofumi Fukui , Masanori Miyazaki , Masami Aihara , Chisato Iwasaki , Koichi Fukuda , Yasuhiko Kasama
发明人： Hirofumi Fukui , Masanori Miyazaki , Masami Aihara , Chisato Iwasaki , Koichi Fukuda , Yasuhiko Kasama
IPC分类号： H01L21/205 , C23C14/34 , C23C16/02 , C23C16/44 , C23C16/509 , H01L21/203 , H01L21/31 , H01L21/336 , H01L21/77 , H01L31/20 , C23C16/00
CPC分类号： H01L29/66765 , C23C14/34 , C23C16/0245 , C23C16/4405 , C23C16/5096 , H01J37/34 , H01L31/202 , H01J2237/32 , H01L27/1214 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.
摘要翻译：一种用于制造薄膜的方法，其中使用化学气相沉积（CVD）在基板上形成第一膜，并且使用溅射在所述基板上形成第二膜，其中所述工艺在相同的沉积室中依次进行而不暴露底物转化为氧化性气氛。沉积室包括第一电极和位于第一电极下方的第二电极。在CVD工艺期间，将虚拟目标物安装在第一电极上，并且将基板安装在第二电极上，将反应性气体引入室中，并且将高频电力施加到第一和第二电极两者，由此引起反应气体的成分沉积在基底上以形成第一膜。随后，将任何剩余的反应气体从室中除去，并且自动化机构从第一电极移除虚设目标物并将虚拟目标物存储在储存室中。然后将溅射电极安装在第一电极上，并将溅射气体引入反应室。然后将高频电力施加到第一和第二电极，由此使溅射气体和溅射靶将第二膜沉积在基板上。

40. 发明授权

US06509305B1 Method for preparing cleaning solution 有权
标题翻译：清洗液的制备方法
公开(公告)号：US06509305B1
公开(公告)日：2003-01-21
申请号：US09570575
申请日：2000-05-12
申请人： Kenichi Mitsumori , Eui-Yeol Oh , Yasuhiko Kasama , Tadahiro Ohmi , Takashi Imaoka
发明人： Kenichi Mitsumori , Eui-Yeol Oh , Yasuhiko Kasama , Tadahiro Ohmi , Takashi Imaoka
IPC分类号： C11D1100
CPC分类号： B01F3/04985
摘要： Deionized water from a deionized water source (21) for electrolysis is supplied by a pressurizing pump (20) to an electrolyzer (2) to obtain a hydrogen gas and ozone gas by means of electrolysis. The pressures of these gasses are maintained at not less than the atmospheric pressure. These gasses at a pressure of the atmospheric pressure or more are dissolved in high-purity water in gas dissolving units (6,7) to obtain ozone water and hydrogen water respectively. These ozone water and hydrogen water are introduced into mixer (8,9) to adjust pH respectively. In this way, highly-concentrated, gas dissolved cleaning solution is prepared in a short period of time.
摘要翻译：来自用于电解的去离子水源（21）的去离子水通过加压泵（20）供给电解槽（2），通过电解获得氢气和臭氧气体。这些气体的压力保持在不低于大气压力。在大气压或更高的压力下将这些气体溶解在气体溶解单元（6,7）中的高纯度水中，分别得到臭氧水和氢气水。将这些臭氧水和氢水引入混合器（8,9）中以分别调节pH。以这种方式，在短时间内制备高浓度，气体溶解的清洁溶液。

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