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31. 发明授权

US07998364B2 Silicate phosphor and its manufacture method as well as light-emitting device using the same 有权
标题翻译：硅酸盐荧光粉及其制造方法以及使用其的发光装置
公开(公告)号：US07998364B2
公开(公告)日：2011-08-16
申请号：US11754432
申请日：2007-05-29
申请人： Wei Xia , Jing Xu , Guangxu Lin , Xifeng Wang , Zhiguo Xiao
发明人： Wei Xia , Jing Xu , Guangxu Lin , Xifeng Wang , Zhiguo Xiao
IPC分类号： C09K11/59 , C09K11/63 , C09K11/73 , C09K11/55 , C09K11/54
CPC分类号： C09K11/774 , C09K11/7734 , C09K11/7792 , C09K11/7796 , C09K11/7797 , Y02B20/181
摘要： The invention relates to an ultraviolet to green light region silicate phosphor capable of being excited by radiation light source and its manufacturing method, particularly to white and multicolor systems light-emitting device. The material has luminous color in the range from blue to red color system. The essential composition of the phosphor is aMO.bM′O.SiO2.cR:xEu.yLn.zLv.δLm, wherein M is an element or a combination of elements selected from the group consisting of Sr, Ca, Ba and Zn; M′ is an element or a combination of elements selected from the group consisting of Mg, Cd and Be; R is one or two of B2O3 and P2O5; Ln is an element or a combination of elements selected from the group consisting of Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Bi, Sm, Sn, Y, Lu, Ga, Sb, Tb, Mn and Pb; Lv is an element or a combination of elements selected from the group consisting of Cl, F, Br, I and S; Lm is an element or a combination of elements selected from the group consisting of Li, Na and K.
摘要翻译：本发明涉及能够被辐射光源激发的紫外至绿光区域硅酸盐荧光体及其制造方法，特别涉及白色和多色系统的发光装置。该材料具有从蓝色到红色系统范围内的发光颜色。荧光体的基本组成是M，SbMO，SiO 2，cR：xEu.yLn.zLv.δLm，其中M是选自Sr，Ca，Ba和Zn的元素或元素的组合; M'是选自Mg，Cd和Be的元素或元素的组合; R是B2O3和P2O5中的一种或两种; Ln是选自Nd，Dy，Ho，Tm，La，Ce，Er，Pr，Bi，Sm，Sn，Y，Lu，Ga，Sb，Tb，Mn和Pb中的元素或元素的组合 ; Lv是选自Cl，F，Br，I和S的元素或元素的组合; Lm是选自Li，Na和K的元素或元素的组合。

32. 发明申请

US20110104492A1 HIGHLY EFFICIENT GAS PHASE METHOD FOR MODIFICATION AND FUNCTIONALIZATION OF CARBON NANOFIBRES WITH NITRIC ACID VAPOUR 审中-公开
标题翻译：用硝酸蒸汽改性和功能化碳纳米管的高效气相方法
公开(公告)号：US20110104492A1
公开(公告)日：2011-05-05
申请号：US13002396
申请日：2009-06-27
申请人： Martin Muhler , Wei Xia
发明人： Martin Muhler , Wei Xia
IPC分类号： D02G3/02 , C07D311/02 , B82Y99/00 , B82Y40/00
CPC分类号： D01F11/12 , B01J20/20 , B01J20/205 , B01J20/28007 , B01J20/28023 , B01J20/28059 , B01J20/28061 , B01J21/185 , B01J35/1014 , B01J35/1019 , B01J37/0207 , B82Y30/00 , C08J5/043 , D06M11/65 , Y10T428/2933
摘要： The present invention relates to a method for the functionalization of carbon fibres using the vapour of nitric acid, carbon fibres thus modified and use thereof.
摘要翻译：本发明涉及使用硝酸蒸汽，如此改性的碳纤维及其用途来使碳纤维功能化的方法。

33. 发明申请

US20110031585A1 Method for fabricating a MIM capacitor using gate metal for electrode and related structure 有权
标题翻译：用于电极栅极金属和相关结构的MIM电容器的制造方法
公开(公告)号：US20110031585A1
公开(公告)日：2011-02-10
申请号：US12462692
申请日：2009-08-07
申请人： Wei Xia , Xiangdong Chen , Akira Ito
发明人： Wei Xia , Xiangdong Chen , Akira Ito
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L27/0629 , H01L28/60
摘要： According to one exemplary embodiment, a method for fabricating a MIM capacitor in a semiconductor die includes forming a dielectric one segment over a substrate and a metal one segment over the dielectric one segment, where the metal one segment forms a lower electrode of the MIM capacitor. The method further includes forming a dielectric two segment over the dielectric one segment and a metal two segment over the dielectric two segment, where a portion of the metal two segment forms an upper electrode of the MIM capacitor. The metal one segment comprises a first gate metal. The metal two segment can comprise a second gate metal.
摘要翻译：根据一个示例性实施例，一种用于在半导体管芯中制造MIM电容器的方法包括在电介质一段上形成电介质一段并在电介质一段上形成金属一段，其中金属一段形成MIM电容器的下电极。该方法还包括在电介质一段上形成电介质两段，在电介质两段上形成金属二段，其中金属二段的一部分形成MIM电容器的上电极。金属一段包括第一栅极金属。金属二段可以包括第二栅极金属。

34. 发明申请

US20100320561A1 Method for forming a one-time programmable metal fuse and related structure 有权
标题翻译：形成一次性可编程金属保险丝及相关结构的方法
公开(公告)号：US20100320561A1
公开(公告)日：2010-12-23
申请号：US12456833
申请日：2009-06-22
申请人： Wei Xia , Xiangdong Chen , Akira Ito
发明人： Wei Xia , Xiangdong Chen , Akira Ito
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： According to one exemplary embodiment, a method for forming a one-time programmable metal fuse structure includes forming a metal fuse structure over a substrate, the metal fuse structure including a gate metal segment situated between a dielectric segment and a polysilicon segment, a gate metal fuse being formed in a portion of the gate metal segment. The method further includes doping the polysilicon segment so as to form first and second doped polysilicon portions separated by an undoped polysilicon portion where, in one embodiment, the gate metal fuse is substantially co-extensive with the undoped polysilicon portion. The method can further include forming a first silicide segment on the first doped polysilicon portion and a second silicide segment on the second doped polysilicon portion, where the first and second silicide segments form respective terminals of the one-time programmable metal fuse structure.
摘要翻译：根据一个示例性实施例，一种用于形成一次性可编程金属熔丝结构的方法包括在衬底上形成金属熔丝结构，所述金属熔丝结构包括位于介电段和多晶硅段之间的栅极金属段，栅极金属熔丝形成在栅极金属段的一部分中。该方法还包括掺杂多晶硅段以便形成由未掺杂多晶硅部分分开的第一和第二掺杂多晶硅部分，其中在一个实施例中，栅极金属熔丝与未掺杂的多晶硅部分基本上共同延伸。该方法还可以包括在第一掺杂多晶硅部分上形成第一硅化物部分和在第二掺杂多晶硅部分上形成第二硅化物部分，其中第一和第二硅化物部分形成一次性可编程金属熔丝结构的相应端子。

35. 发明申请

US20070069181A1 Long afterglow luminescent material and its manufacturing method 有权
标题翻译：长余辉发光材料及其制造方法
公开(公告)号：US20070069181A1
公开(公告)日：2007-03-29
申请号：US11518603
申请日：2006-09-08
申请人： Xixian Luo , Wei Xia , Zhiguo Xiao , Jingjie Yu , Jinxia Duan , Qi Chai
发明人： Xixian Luo , Wei Xia , Zhiguo Xiao , Jingjie Yu , Jinxia Duan , Qi Chai
IPC分类号： C09K11/08 , C09K11/77
CPC分类号： C09K11/886 , C09K11/7738 , C09K11/774 , C09K11/7795 , C09K11/7796 , C09K11/7797
摘要： A long afterglow luminescent material of the formula aMO.bM′ (SβSe1-β).cAl2O3.d B2O3.eP2O5: XEu.yLn, wherein M is/are selected from Sr, Ca, Ba, and Mg, and any combinations thereof; M′ is/are selected from Sr, Ca, and Ba, and any combinations thereof; Ln is/are selected from Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Bi, and Sm, and any combinations thereof; a, b, c, d, e, x and y are mole ratios, wherein 0.5
摘要翻译：式aMO.bM'的长余辉发光材料（S，β1-β）。cAl 2 O 3 其中M是（Ⅳ），其中M是（Ⅳ），其中M是 /选自Sr，Ca，Ba和Mg及其任何组合; M'选自Sr，Ca和Ba及其任何组合; Ln选自Nd，Dy，Ho，Tm，La，Ce，Er，Pr，Bi和Sm及其任何组合; a，b，c，d，e，x和y是摩尔比，其中0.5

36. 发明申请

US20050179008A1 Light-storage self-luminescent glass and the process for producing the same 审中-公开
标题翻译：光存储自发光玻璃及其制造方法
公开(公告)号：US20050179008A1
公开(公告)日：2005-08-18
申请号：US10782621
申请日：2004-02-18
申请人： Zhiguo Xiao , Jialing Dai , Xixian Luo , Jianxiong Liu , Wei Xia , Lifang Liu
发明人： Zhiguo Xiao , Jialing Dai , Xixian Luo , Jianxiong Liu , Wei Xia , Lifang Liu
IPC分类号： C03C1/00 , C03C4/12 , C03C14/00 , C09K11/77
CPC分类号： C09K11/7792 , C03C4/12 , C03C14/004 , C03C2214/04 , C03C2214/16
摘要： A light-storage self-luminescent glass is disclosed, comprising from 0.01 to 40% of a light-storage self-luminescent material activated by multiple ions and from 99.99 to 60% of a matrix glass; wherein the light-storage self-luminescent material has a particle size from 10 μm to 20 mm, and the matrix glass can be a low melting point glass or a common silicate glass. A process for producing the glass is also disclosed, comprising doping a light-storage self-luminescent material during the forming process of a common silicate glass, or thoroughly mixing low melting point glass powder with a light-storage self-luminescent material, and then heat treating the system at 700-1100° C. to obtain the light-storage self-luminescent glass. The process is simple and the cost is low.
摘要翻译：公开了一种储光自发光玻璃，其包含0.01〜40％的多重离子活化的储光自发光材料和99.99〜60％的基质玻璃; 其中，所述储光自发光材料的粒径为10μm〜20mm，所述基体玻璃可以为低熔点玻璃或普通硅酸盐玻璃。还公开了一种制造玻璃的方法，包括在普通硅酸盐玻璃的成型过程中掺杂储光自发光材料，或将低熔点玻璃粉末与储光自发光材料充分混合，然后在700-1100℃下对系统进行热处理以获得储光自发光玻璃。流程简单，成本低廉。

37. 发明授权

US08965920B2 Distributing and sharing content in a network 有权
标题翻译：在网络中分发和共享内容
公开(公告)号：US08965920B2
公开(公告)日：2015-02-24
申请号：US12334889
申请日：2008-12-15
申请人： Zhiying Jin , Jack Jianxiu Hao , Fang Zhu , Wei Xia , Guanrao Chen , Alex Sakharov , Gaurav D Mehta
发明人： Zhiying Jin , Jack Jianxiu Hao , Fang Zhu , Wei Xia , Guanrao Chen , Alex Sakharov , Gaurav D Mehta
IPC分类号： G06F17/30
CPC分类号： G06F17/30035 , G06F17/30569
摘要： A method may include receiving, from a first user device associated with a user profile, a first request for a media file and streaming the media file over a network to the first user device in a first format appropriate for the first device. The method may also include stopping the streaming of the media file and associating a stop time with the stopping, wherein the stop time indicates a position in the media file and receiving, from a second user device different from the first user device, a second request for the media file, the second user device being associated with the user profile. The method may also include streaming, starting at the stop time, the media file over the network to the second user device in a second format appropriate for the second device and different than the first format.
摘要翻译：方法可以包括从与用户简档相关联的第一用户设备接收对媒体文件的第一请求，并且以适合于第一设备的第一格式通过网络将媒体文件流式传输到第一用户设备。该方法还可以包括停止媒体文件的流传输并将停止时间与停止相关联，其中停止时间指示媒体文件中的位置，并从不同于第一用户设备的第二用户设备接收第二请求对于媒体文件，第二用户设备与用户简档相关联。该方法还可以包括以适合于第二设备并且不同于第一格式的第二格式的从停止时间开始将网络上的媒体文件流传输到第二用户设备。

38. 发明授权

US08866258B2 Interposer structure with passive component and method for fabricating same 有权
标题翻译：具有无源元件的内插器结构及其制造方法
公开(公告)号：US08866258B2
公开(公告)日：2014-10-21
申请号：US12587482
申请日：2009-10-06
申请人： Wei Xia , Xiangdong Chen , Akira Ito
发明人： Wei Xia , Xiangdong Chen , Akira Ito
IPC分类号： H01L27/08 , H01L23/498 , H01L21/768 , H01L21/48 , H01L23/14
CPC分类号： H01L23/49827 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L23/49822 , H01L2223/6677 , H01L2224/16225 , H01L2924/15311
摘要： According to an exemplary embodiment, an interposer structure for electrically coupling a semiconductor die to a support substrate in a semiconductor package includes at least one through-wafer via extending through a semiconductor substrate, where the at least one through-wafer via provides an electrical connection between the semiconductor die and the support substrate. The interposer structure further includes a passive component including a trench conductor, where the trench conductor extends through the semiconductor substrate. The passive component further includes a dielectric liner situated between the trench conductor and the semiconductor substrate. The passive component can further include at least one conductive pad for electrically coupling the trench conductor to the semiconductor die. The passive component can be, for example, an inductor or an antenna.
摘要翻译：根据示例性实施例，用于将半导体管芯电耦合到半导体封装中的支撑衬底的插入器结构包括延伸穿过半导体衬底的至少一个贯通晶片，其中至少一个贯通晶片通孔提供电连接在半导体管芯和支撑衬底之间。插入器结构还包括无源部件，其包括沟槽导体，其中沟槽导体延伸穿过半导体衬底。无源部件还包括位于沟槽导体和半导体衬底之间的电介质衬垫。无源部件还可以包括至少一个用于将沟槽导体电耦合到半导体管芯的导电焊盘。无源部件可以是例如电感器或天线。

39. 发明授权

US08836032B2 Fin-based adjustable resistor 有权
标题翻译：鳍式可调电阻
公开(公告)号：US08836032B2
公开(公告)日：2014-09-16
申请号：US13277547
申请日：2011-10-20
申请人： Wei Xia , Xiangdong Chen
发明人： Wei Xia , Xiangdong Chen
IPC分类号： H01L27/12 , H01L29/78
CPC分类号： H01L29/785 , H01L2029/7857
摘要： According to one exemplary embodiment, a fin-based adjustable resistor includes a fin channel of a first conductivity type, and a gate surrounding the fin channel. The fin-based adjustable resistor also includes first and second terminals of the first conductivity type being contiguous with the fin channel, and being situated on opposite sides of the fin channel. The fin channel is lower doped relative to the first and second terminals. The resistance of the fin channel between the first and second terminals is adjusted by varying a voltage applied to the gate so as to achieve the fin-based adjustable resistor. The gate can be on at least two sides of the fin channel. Upon application of a depletion voltage, the fin channel can be depleted before an inversion is formed in the fin channel.
摘要翻译：根据一个示例性实施例，鳍状可调电阻器包括第一导电类型的鳍状沟道和围绕鳍状沟道的栅极。鳍状可调电阻器还包括第一导电类型的第一和第二端子，其与鳍状通道邻接并位于翅片通道的相对侧上。翅片通道相对于第一和第二端子较低掺杂。通过改变施加到栅极的电压来调节第一和第二端子之间的鳍状通道的电阻，从而实现基于鳍片的可调电阻器。门可以在鳍通道的至少两侧。在施加耗尽电压时，在鳍式通道中形成反转之前，可以耗尽鳍通道。

40. 发明授权

US08792435B2 Group resource allocation method 有权
标题翻译：组资源分配方法
公开(公告)号：US08792435B2
公开(公告)日：2014-07-29
申请号：US13143195
申请日：2009-11-17
申请人： Wei Xia , Yanfeng Guan , Zhaohua Lu , Dengkui Zhu , Ying Liu , Ding Ning
发明人： Wei Xia , Yanfeng Guan , Zhaohua Lu , Dengkui Zhu , Ying Liu , Ding Ning
IPC分类号： H04W72/04 , H04W72/12
CPC分类号： H04W72/005 , H04W72/04 , H04W72/121
摘要： The present invention discloses a group resource allocation method, which comprises the following steps that: a user resource management device groups user-side equipments according to the service type or the modulation and coding scheme of the user-side equipments; and the user resource management device performs an initialization description and/or an update and maintenance description for each group via a group message, describes the resource allocation information of the user-side equipments in each group via the group message to realize a group resource allocation. Through the technical solution above, the present invention lowers the description overhead of a group resource allocation.
摘要翻译：本发明公开了一种群资源分配方法，包括以下步骤：用户资源管理设备根据用户侧设备的业务类型或调制编码方式对用户侧设备进行分组; 用户资源管理装置经由组消息对每个组进行初始化描述和/或更新维护描述，经由组消息描述每个组中的用户侧设备的资源分配信息，以实现组资源分配。通过上述技术方案，本发明降低了组资源分配的描述开销。

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