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31. 发明授权

US5589673A Electric high-tension circuit breaker 失效
标题翻译：电动高压断路器
公开(公告)号：US5589673A
公开(公告)日：1996-12-31
申请号：US313086
申请日：1995-05-15
申请人： Volker Lehmann , Heiner Marin , Ingolf Reiher
发明人： Volker Lehmann , Heiner Marin , Ingolf Reiher
IPC分类号： H01H33/90 , H01H33/91 , H01H33/915 , H01H33/86
CPC分类号： H01H33/91 , H01H2033/906 , H01H2033/908 , H01H33/901
摘要： A self-blow-out switch having a compression device has a pressure chamber heated by electric arc energy connected to a compression space, optionally with valve control. The compression space is connected to a low-pressure space via a pressure relief valve and a refill valve. Two valve disks of the relief and refill valves, which are located between the compression space and the low-pressure space are designed as two concentric washers of different diameters, lying in direct contact with each other and partly overlapping each other, and integrated to form a single valve unit.
摘要翻译： PCT No.PCT / DE93 / 00129 Sec。 371日期1995年5月15日 102（e）日期1995年5月15日PCT提交1993年2月9日PCT公布。公开号WO93 / 20573 日期1993年10月14日具有压缩装置的自吹出开关具有通过电弧能量加热的压力室，压电室连接到压缩空间，可选地具有阀门控制。压缩空间通过压力释放阀和再充填阀连接到低压空间。位于压缩空间和低压空间之间的浮雕和补充阀的两个阀盘被设计成两个不同直径的同心洗衣机，彼此直接接触并且部分地彼此重叠，并且整合形成单阀单元。

32. 发明授权

US5563389A High-voltage power switch 失效
标题翻译：高压电源开关
公开(公告)号：US5563389A
公开(公告)日：1996-10-08
申请号：US313088
申请日：1995-04-11
申请人： Heiner Marin , Volker Lehmann
发明人： Heiner Marin , Volker Lehmann
IPC分类号： H01H1/38 , H01H33/24 , H01H33/91 , H01H33/88
CPC分类号： H01H33/91 , H01H1/385 , H01H33/245
摘要： High-voltage power switch with an arc contact and a spatially separated rated current contact, with the movable part of the rated current contact taking the form of an external hollow cylinder for delimiting a storage space for a pressurized quenching gas. The hollow cylinder is made of a one-piece precision casting of contact material, especially CuCr alloy, the jacket of which is stiffened by three inwardly projecting flange-like projections. This design provides a light structure for a bridging circuit component for a rated current contact requiring comparatively little driving power for its operation.
摘要翻译： PCT No.PCT / DE93 / 00308 Sec。 371日期1995年04月11日 102（e）日期1995年4月11日PCT 1993年3月26日PCT公布。出版物WO93 / 20574 日期1993年10月14日具有电弧触点和空间分离的额定电流触点的高压电源开关，额定电流触点的可动部分采取外部中空圆筒的形式，用于限定加压淬火气体的存储空间。中空圆筒由接触材料的一体式精密铸造制成，特别是CuCr合金，其外壳由三个向内突出的凸缘状凸起加固。该设计提供了用于额定电流接触的桥接电路部件的轻结构，其操作需要相对较小的驱动功率。

33. 发明授权

US5494832A Method for manufacturing a solar cell from a substrate wafer 失效
标题翻译：从基板晶片制造太阳能电池的方法
公开(公告)号：US5494832A
公开(公告)日：1996-02-27
申请号：US219535
申请日：1994-03-29
申请人： Volker Lehmann , Josef Willer , Wolfgang Hoenlein
发明人： Volker Lehmann , Josef Willer , Wolfgang Hoenlein
IPC分类号： H01L31/0224 , H01L31/0352 , H01L31/047 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/03529 , H01L31/047 , Y02E10/547 , Y02P70/521 , Y10S438/977
摘要： Through-holes are formed in a substrate wafer by electrochemical etching, so that a perforated, self-supporting layer of n-doped, monocrystalline silicon arises. An n-doped region and a p-doped region that form a pn-junction and that both adjoin a first principal face of the self-supporting layer are produced in the self-supporting layer. A contact to the n-doped region and a contact to the p-doped region are formed on the first principal face, so that the pn-junction can be interconnected as solar cell into which the light incidence can occur via a second principal face lying opposite the first.
摘要翻译：通过电化学蚀刻在基板晶片中形成通孔，从而产生n掺杂的单晶硅的穿孔的自支撑层。在自支撑层中产生形成pn结的并且与自支撑层的第一主面相邻的n掺杂区域和p掺杂区域。在第一主面上形成与n掺杂区域的接触和与p掺杂区域的接触的接触，使得pn结可以作为太阳能电池互连，其中可以经由第二主面对面发生光入射相反的第一。

34. 发明授权

US5010294A Method for topically-resolved determination of the diffusion length of minority charge carriers in a semiconductor crystal body with the assistance of an electrolytic cell 失效
标题翻译：借助于电解槽来局部地确定半导体晶体中的少数载流子的扩散长度的方法
公开(公告)号：US5010294A
公开(公告)日：1991-04-23
申请号：US522115
申请日：1990-05-11
申请人： Helmut Foell , Volker Lehmann
发明人： Helmut Foell , Volker Lehmann
IPC分类号： G01N21/00 , G01R31/265 , H01L21/66
CPC分类号： G01R31/2656
摘要： The measurement of the diffusion length of minority charge carriers in a semiconductor crystal body is enabled in that the front side and the rear side of the crystal wafer are each respectively brought into contact with an electrolyte in a respective measuring cell and an inhibiting space charge zone is generated at the front side of the wafer. The front side is irradiated with light having a wave length of .lambda.>800 nm and the front side photocurrent I.sub.1 of the minority charge carriers thereby generated is measured. The diffusion length L can be calculated from the photocurrent I.sub.1 with the assistance of a mathematical equation. The topical distribution of the diffusion length L is obtained given point-by-point irradiation and scanning over the crystal wafer. Diffusion lengths of L 800 nm.
摘要翻译：半导体晶体中的少数电荷载流子的扩散长度的测量可以在晶体晶片的前侧和后侧分别与各个测量单元中的电解质和抑制空间电荷区接触在晶片的前侧产生。用波长> 800nm的光照射正面，测定由此产生的少数电荷载流子的前侧光电流I1。借助于数学方程，可以从光电流I1计算扩散长度L. 通过逐点照射和晶体晶片上的扫描获得扩散长度L的局部分布。可以通过选择波长> 800nm的光源来测量L <150μm的扩散长度。

35. 发明授权

US4962879A Method for bubble-free bonding of silicon wafers 失效
标题翻译：硅晶片无气泡接合的方法
公开(公告)号：US4962879A
公开(公告)日：1990-10-16
申请号：US411865
申请日：1989-09-25
申请人： Ulrich M. Goesele , Volker Lehmann
发明人： Ulrich M. Goesele , Volker Lehmann
IPC分类号： H01L21/02 , H01L21/18 , H01L21/20 , H01L21/306 , H01L21/58
CPC分类号： H01L21/02052 , H01L21/187 , H01L21/2007 , H01L24/26 , H01L24/83 , H01L2224/8319 , H01L2224/8385 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01077 , H01L2924/01082 , H01L2924/07802 , H01L2924/14 , Y10S228/903 , Y10S438/974
摘要： A method for bubble-free bonding of silicon wafers to silicon wafers or silicon wafers to quartz wafers either outside or inside a Clean Room. The method includes the steps of positioning wafers in closely spaced-apart and parallel relationship to each other in a rack or the like with mirror-polished surfaces of the wafers facing each other, cleansing the mirror-polished surfaces with a hydrophilization cleansing solution, flushing the cleansing solution from the mirror-polished surfaces of the wafers with deionized water, drying the wafers in a spin-dryer, and moving the wafers together so that contact occurs between opposing mirror-polished surfaces of the wafers and bonding occurs. The bonded wafers are then placed into a wafer shipping and storing container for improved wafer storage performance.
摘要翻译：一种在无尘室外部或内部将硅晶片与硅晶片或硅晶片无气泡接合到石英晶片的方法。该方法包括以下步骤：将晶片彼此间隔开并且平行的关系定位在机架等中，并将晶片的镜面抛光表面相互面对，用亲水化清洁溶液清洗镜面抛光表面，冲洗用去离子水从晶片的镜面抛光表面清洁溶液，在旋转干燥器中干燥晶片，并将晶片一起移动，使得在晶片的相对的镜面抛光表面之间发生接触，并发生接合。然后将粘合的晶片放置在晶片运输和存储容器中，以改善晶片存储性能。

36. 发明授权

US09135586B2 System for dynamic parallel looping of repetitive tasks during execution of process-flows in process runtime 有权
标题翻译：用于在进程运行时执行过程流期间重复任务的动态并行循环的系统
公开(公告)号：US09135586B2
公开(公告)日：2015-09-15
申请号：US12914128
申请日：2010-10-28
申请人： Sören Balko , Volker Lehmann , Philipp Sommer , Boris Klinker
发明人： Sören Balko , Volker Lehmann , Philipp Sommer , Boris Klinker
IPC分类号： G06F9/46 , G06Q10/06 , G06F9/48
CPC分类号： G06Q10/06 , G06F9/4843 , G06F9/485 , G06F9/4881 , G06Q10/06311 , G06Q10/06316 , G06Q10/0633
摘要： Systems and methods for dynamic parallel looping in process runtime environment are described herein. A currently processed process-flow instance of a business process reaches a dynamic loop activity including a repetitive task to be executed with each loop cycle. A predefined expression is evaluated on top of the current data context of the process-flow instance to discover a number of loop cycles for execution within the dynamic loop activity. A number of parallel activities corresponding to the repetitive task recurrences are instantiated and executed in parallel. The results of the parallel activities are coordinated to confirm that the dynamic loop activity is completed.
摘要翻译：本文描述了用于进程运行时环境中的动态并行循环的系统和方法。业务流程的当前处理的流程实例达到动态循环活动，包括要在每个循环周期执行的重复任务。在进程流实例的当前数据上下文之前评估预定义表达式，以发现在动态循环活动中执行的循环数。与重复任务重复相对应的多个并行活动被实例化并并行执行。协调并行活动的结果，确认动态循环活动完成。

37. 发明申请

US20140209568A1 CIRCUIT BREAKER UNIT 有权
标题翻译：断路器单元
公开(公告)号：US20140209568A1
公开(公告)日：2014-07-31
申请号：US14348151
申请日：2012-09-05
申请人： Radu-Marian Cernat , Volker Lehmann , Andrzej Nowakowski
发明人： Radu-Marian Cernat , Volker Lehmann , Andrzej Nowakowski
IPC分类号： H01H33/04
CPC分类号： H01H33/04 , H01H3/60 , H01H33/66 , H01H33/7015 , H01H33/91 , H01H2009/526 , H01H2033/888
摘要： A power circuit breaker unit has first and second arcing contact pieces. A contact gap is formed between the arcing contact pieces. A switch gas channel of the circuit breaker unit joins the contact gap to the surrounding area of the circuit breaker unit for removing a switch gas from the contact gap. Several barriers that increase a flow resistance are arranged successively, spaced from one another, in the switch gas channel. At least one of the barriers is arranged between a first pipe section, which is surrounded by a second pipe section, and the second pipe section.
摘要翻译：电源断路器单元具有第一和第二电弧接触件。在电弧接触片之间形成接触间隙。断路器单元的开关气体通道将接触间隙连接到断路器单元的周围区域，以从接触间隙去除开关气体。在开关气体通道中，相互间隔开地设有增加流阻的几个屏障。至少一个挡板布置在由第二管段包围的第一管段和第二管段之间。

38. 发明授权

US08633413B2 Switchgear assembly with a contact gap 有权
标题翻译：具有接触间隙的开关组件
公开(公告)号：US08633413B2
公开(公告)日：2014-01-21
申请号：US13201470
申请日：2010-01-26
申请人： Radu-Marian Cernat , Hold Dienemann , Stefan Giere , Volker Lehmann , Manfred Meinherz
发明人： Radu-Marian Cernat , Hold Dienemann , Stefan Giere , Volker Lehmann , Manfred Meinherz
IPC分类号： H01H33/88
CPC分类号： H01H33/901 , H01H33/703 , H01H33/74 , H01H2033/888
摘要： A switchgear assembly has a contact gap and an insulating material nozzle. The insulating material nozzle at least partly encloses the contact gap. A nozzle channel for the insulating material nozzle opens with a outlet opening in a hot gas space. A deflector element is disposed within the hot gas space which defines a deflector channel. The deflector channel has a segment which has an expanding cross-section in the stream direction of a switching gas in the hot gas space.
摘要翻译：开关组件具有接触间隙和绝缘材料喷嘴。绝缘材料喷嘴至少部分地包围接触间隙。用于绝缘材料喷嘴的喷嘴通道在热气体空间中具有出口开口。偏转元件设置在限定偏转器通道的热气体空间内。偏转器通道具有在热气体空间中的开关气体的流动方向上具有膨胀横截面的段。

39. 发明申请

US20120292291A1 ARC CHAMBER FOR A CIRCUIT BREAKER AND CIRCUIT BREAKER HAVING AN ARC CHAMBER 有权
标题翻译：用于断路器的电弧室和具有电弧室的断路器
公开(公告)号：US20120292291A1
公开(公告)日：2012-11-22
申请号：US13522359
申请日：2011-01-06
申请人： Guenter Kaulfuss , Volker Lehmann , Karl Mascher , Peter Milewski
发明人： Guenter Kaulfuss , Volker Lehmann , Karl Mascher , Peter Milewski
IPC分类号： H01H33/02
CPC分类号： H01H33/24 , H01H33/53
摘要： An arc chamber for a circuit breaker has first and second mounting bodies. The mounting bodies are disposed at the ends of an electrically insulating insulation section of the arc chamber. The insulation section is formed of at least two shell-shaped partial sections. The partial sections are curved concavely relative to a longitudinal axis of the arc chamber. A gap is formed between the edges of the bodies of the partial sections.
摘要翻译：用于断路器的电弧室具有第一和第二安装体。安装体设置在电弧室的电绝缘绝缘部分的端部。绝缘部分由至少两个壳形部分部分形成。部分部分相对于电弧室的纵向轴线凹陷地弯曲。在部分部分的主体的边缘之间形成间隙。

40. 发明申请

US20110042046A1 INTEGRATED COOLANT CIRCUIT ARRANGEMENT, OPERATING METHOD AND PRODUCTION METHOD 有权
标题翻译：集成冷却电路布置，操作方法和生产方法
公开(公告)号：US20110042046A1
公开(公告)日：2011-02-24
申请号：US12940713
申请日：2010-11-05
申请人： Volker Lehmann , Reinhard Stengl , Herbert Schäfer
发明人： Volker Lehmann , Reinhard Stengl , Herbert Schäfer
IPC分类号： F28D15/04 , H01L21/306
CPC分类号： H01L23/473 , H01L21/30604 , H01L21/3063 , H01L23/427 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： An integrated circuit arrangement and method of fabricating the integrated circuit arrangement is provided. At least one integrated electronic component is arranged at a main area of a substrate. The component is arranged in the substrate or is isolated from the substrate by an electrically insulating region. Main channels are formed in the substrate and arranged along the main area. Each main channel is completely surrounded by the substrate transversely with respect to a longitudinal axis. Transverse channels are arranged transversely with respect to the main channels. Each transverse channel opens into at least one main channel. More than about ten transverse channels open into a main channel.
摘要翻译：提供一种集成电路装置及其制造方法。至少一个集成电子部件布置在基板的主要区域。该部件布置在基板中，或者通过电绝缘区域与基板隔离。主通道形成在基板上并且沿着主区域布置。每个主通道相对于纵向轴线横向地完全被基底包围。横向通道相对于主通道横向布置。每个横向通道打开至少一个主通道。超过十个横向通道进入主通道。

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