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31. 发明申请

US20100085067A1 ANESTHESIA MONITOR, CAPACITANCE NANOSENSORS AND DYNAMIC SENSOR SAMPLING METHOD 审中-公开
标题翻译：麻醉监护仪，电容式纳米传感器和动态传感器采样方法
公开(公告)号：US20100085067A1
公开(公告)日：2010-04-08
申请号：US12560316
申请日：2009-09-15
申请人： Jean-Christophe P. Gabriel , Vikram Joshi , John Loren Passmore , Sergei Skarupo , Alexander Star , Christian Valcke
发明人： Jean-Christophe P. Gabriel , Vikram Joshi , John Loren Passmore , Sergei Skarupo , Alexander Star , Christian Valcke
IPC分类号： G01N33/497 , G01N27/22 , A61B5/08 , A61B5/05
CPC分类号： A61B5/0833 , A61B5/097 , A61B5/4821 , A61B5/6819 , A61B2562/0285 , B82Y30/00
摘要： Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes such as anesthesia gases, CO2 and the like in human breath. An integrated monitor system and disposable sensor unit is described which permits a number of different anesthetic agents to be identified and monitored, as well as concurrent monitoring of other breath species, such as CO2. The sensor unit may be configured to be compact, light weight, and inexpensive. Wireless embodiments provide such enhancements as remote monitoring. A simulator system for modeling the contents and conditions of human inhalation and exhalation with a selected mixture of a treatment agent is also described, particularly suited to the testing of sensors to be used in airway sampling.
摘要翻译：描述了纳米电子传感器的实施例，包括用于在人呼吸中检测分析物例如麻醉气体，CO 2等的传感器。描述了一种集成监视器系统和一次性传感器单元，其允许识别和监视多个不同的麻醉剂，以及对其它呼吸物质（例如CO 2）的并发监测。传感器单元可以被配置为紧凑，重量轻并且便宜。无线实施例提供诸如远程监视的增强。还描述了一种用于用选定的处理剂混合物对人吸入和呼出的内容物和条件进行建模的模拟器系统，特别适合于用于气道取样的传感器的测试。

32. 发明申请

US20090275163A1 System and Method of Encapsulation 有权
标题翻译：封装的系统和方法
公开(公告)号：US20090275163A1
公开(公告)日：2009-11-05
申请号：US12266457
申请日：2008-11-06
申请人： Joseph Damian Gordon Lacey , Mickael Renault , Vikram Joshi , James F. Bobey , Robertus P. Van Kampen
发明人： Joseph Damian Gordon Lacey , Mickael Renault , Vikram Joshi , James F. Bobey , Robertus P. Van Kampen
IPC分类号： H01L21/56
CPC分类号： B81C1/00333 , B81C2203/0145 , B81C2203/0154
摘要： Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening.
摘要翻译：本文讨论的实施例通常包括在结构内制造MEMS器件的方法。 MEMS器件可以形成在结构上方的空腔中，并且可以在MEMS器件上方发生额外的金属化。空腔可以通过在包围MEMS器件的牺牲层上沉积封装层来形成。然后可以蚀刻封装层以暴露部分牺牲层。牺牲层被暴露，因为它们延伸穿过封装层的侧壁。因此，没有通过封装层的顶部蚀刻释放孔。然后，蚀刻剂去除牺牲层以释放MEMS器件并形成空腔和通过封装层的侧壁的开口。然后可以沉积另外的封装层以密封空腔和开口。

33. 发明申请

US20060194348A1 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same 有权
标题翻译：用于高密度存储器的具有三维取向的铁电和高介电常数集成电路电容器及其制造方法
公开(公告)号：US20060194348A1
公开(公告)日：2006-08-31
申请号：US11411767
申请日：2006-04-26
申请人： Carlos Araujo , Larry McMillan , Narayan Solayappan , Vikram Joshi
发明人： Carlos Araujo , Larry McMillan , Narayan Solayappan , Vikram Joshi
IPC分类号： H01L21/00 , H01L29/94
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , G11C11/22 , H01L21/7687 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.
摘要翻译：三维（“3-D”）存储电容器包括底电极，铁电薄膜和符合绝缘体层的3-D表面的顶电极。电容面积大于电容器的水平占位面积。优选地，电容器的占地面积小于0.2nm 2，并且相应的电容面积通常在0.4nm±2nm至1.0nm 2范围内铁电薄膜优选具有不超过60nm的厚度。包括底电极，铁电薄膜和顶电极的电容器层压体优选具有不超过200nm的厚度。用于沉积厚度在30nm至90nm范围内的铁电薄膜的低热预算MOCVD方法包括在沉积顶电极之前的RTP处理和在沉积顶电极之后进行RTP处理并蚀刻铁电层。

34. 发明申请

US20050157445A1 Nanostructures with electrodeposited nanoparticles 有权
标题翻译：具有电沉积纳米粒子的纳米结构
公开(公告)号：US20050157445A1
公开(公告)日：2005-07-21
申请号：US10945803
申请日：2004-09-20
申请人： Keith Bradley , Alona Davis , Jean-Christophe Gabriel , Tzong-Ru Han , Vikram Joshi , Alexander Star
发明人： Keith Bradley , Alona Davis , Jean-Christophe Gabriel , Tzong-Ru Han , Vikram Joshi , Alexander Star
IPC分类号： G01N27/00 , G01N27/414 , G01N33/00 , H02H1/00
CPC分类号： B82Y30/00 , G01N27/4146 , G01N33/005 , Y10S977/72
摘要： A nanoelectronic device includes a nanostructure, such as a nanotube or network of nanotubes, disposed on a substrate. Nanoparticles are disposed on or adjacent to the nanostructure so as to operatively effect the electrical properties of the nanostructure. The nanoparticles may be composed of metals, metal oxides, or salts, and nanoparticles composed of different materials may be present. The amount of nanoparticles may be controlled to preserve semiconductive properties of the nanostructure, and the substrate immediately adjacent to the nanostructure may remain substantially free of nanoparticles. A method for fabricating the device includes electrodeposition of the nanoparticles using one or more solutions of dissolved ions while providing an electric current to the nanostructures but not to the surrounding substrate.
摘要翻译：纳米电子器件包括设置在衬底上的纳米结构，例如纳米管或纳米管网络。将纳米颗粒设置在纳米结构上或与纳米结构相邻，以便有效地影响纳米结构的电性能。纳米颗粒可以由金属，金属氧化物或盐组成，并且可以存在由不同材料组成的纳米颗粒。可以控制纳米颗粒的量以保持纳米结构的半导体性质，并且紧邻纳米结构的衬底可以基本上不含纳米颗粒。制造该器件的方法包括使用一种或多种溶解离子的溶液电沉积纳米颗粒，同时向纳米结构提供电流，而不向周围的衬底提供电流。

35. 发明申请

US20050094457A1 Ferroelectric memory and method of operating same 审中-公开
标题翻译：铁电存储器和操作方法相同
公开(公告)号：US20050094457A1
公开(公告)日：2005-05-05
申请号：US10425257
申请日：2003-04-28
申请人： Zheng Chen , Vikram Joshi , Narayan Solayappan , Carlos Paz de Araujo , Larry McMillan
发明人： Zheng Chen , Vikram Joshi , Narayan Solayappan , Carlos Paz de Araujo , Larry McMillan
IPC分类号： G11C11/22 , H01L27/06 , H01L27/115 , H01L29/78 , G11C7/00
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/223 , H01L27/0629 , H01L29/78391
摘要： A ferroelectric memory includes a group of memory cells, each cell having a ferroelectric memory element, a drive line on which a voltage for writing information to the group of memory cells is placed, and a bit line on which information to be read out of the group of memory cells is placed. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. A preamplifier is connected between the memory cells and the bit line. A set switch is connected between the drive line and the memory cells, and a reset switch is connected to the memory cells in parallel with the preamplifier. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.
摘要翻译：铁电存储器包括一组存储器单元，每个单元具有铁电存储元件，其上放置用于向存储单元组写入信息的电压的驱动线以及从该存储单元读出的信息的位线放置一组存储单元。通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。前置放大器连接在存储单元和位线之间。一个开关连接在驱动线和存储单元之间，复位开关与前置放大器并联连接到存储单元。在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

36. 发明授权

US06171934B2 Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling 失效
标题翻译：通过电压循环恢复工艺损坏的铁电体中的电子特性
公开(公告)号：US06171934B2
公开(公告)日：2001-01-09
申请号：US09144297
申请日：1998-08-31
申请人： Vikram Joshi , Narayan Solayappan , Walter Hartner , G{umlaut over (u)}nther Schindler
发明人： Vikram Joshi , Narayan Solayappan , Walter Hartner , G{umlaut over (u)}nther Schindler
IPC分类号： H01L21326
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： An integrated circuit is formed containing a metal-oxide ferroelectric thin film. An voltage-cycling recovery process is conducted to reverse the degradation of ferroelectric properties caused by hydrogen. The voltage-cycling recovery process is conducted by applying from 104 to 1011 voltage cycles with a voltage amplitude of from 1 to 15 volts. Conducting voltage-cycling at a higher temperature in the range 30-200° C. enhances recovery. Preferably the metal oxide thin film comprises layered superlattice material. Preferably the layered superlattice material comprises strontium bismuth tantalate or strontium bismuth tantalum niobate. If the integrated circuit manufacture includes a forming-gas anneal, then the voltage-cycling recovery process is performed after the forming-gas anneal. The voltage-cycling recovery process obviates oxygen-recovery annealing, and it allows continued use of conventional hydrogen-rich plasma processes and forming-gas anneals without the risk of permanent damage to the ferroelectric thin film.
摘要翻译：形成含有金属氧化物铁电体薄膜的集成电路。进行电压循环恢复处理以逆转由氢引起的铁电性能的降低。通过施加电压幅度为1至15伏特的104至1011个电压周期来执行电压循环恢复过程。在30-200℃范围内的较高温度下进行电压循环，提高了回收率。优选地，金属氧化物薄膜包括层状超晶格材料。优选地，层状超晶格材料包括钽酸铋钽铋或铌酸铋钽酸铋。如果集成电路制造包括成形气体退火，则在成形气体退火之后执行电压循环恢复过程。电压循环恢复过程避免氧回收退火，并且其允许继续使用常规富氢等离子体工艺和形成气体退火，而不会对铁电薄膜造成永久损坏的风险。

37. 发明授权

US09708177B2 MEMS device anchoring 有权
公开(公告)号：US09708177B2
公开(公告)日：2017-07-18
申请号：US14342387
申请日：2012-08-31
申请人： Robertus Petrus Van Kampen , Mickael Renault , Vikram Joshi , Richard L. Knipe , Anartz Unamuno
发明人： Robertus Petrus Van Kampen , Mickael Renault , Vikram Joshi , Richard L. Knipe , Anartz Unamuno
IPC分类号： B81B7/00 , B81C1/00 , H01H59/00 , H01G5/16
CPC分类号： B81B7/00 , B81B2201/016 , B81B2203/0307 , B81C1/00039 , B81C2203/0136 , H01G5/16 , H01H59/0009 , Y10T29/49105
摘要： Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.

38. 发明授权

US09589731B2 MEMS variable capacitor with enhanced RF performance 有权
标题翻译： MEMS可变电容器具有增强的RF性能
公开(公告)号：US09589731B2
公开(公告)日：2017-03-07
申请号：US14240654
申请日：2012-09-04
申请人： Robertus Petrus Van Kampen , Anartz Unamuno , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Toshiyuki Nagata
发明人： Robertus Petrus Van Kampen , Anartz Unamuno , Richard L. Knipe , Vikram Joshi , Roberto Gaddi , Toshiyuki Nagata
IPC分类号： H01G5/16 , H01G5/18 , B81B3/00 , B81C1/00
CPC分类号： H01G5/16 , B81B3/0051 , B81C1/00158 , B81C1/00476 , B81C1/00523 , H01G5/18
摘要： In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.
摘要翻译：在MEMS器件中，膜抵住RF电极的方式可能会影响器件性能。放置在RF电极上的撞击器或塞子可用于控制膜的着陆，从而控制MEMS器件的电容。可以调整凸块或塞子的形状和位置，以确保膜的适当着陆，即使施加过电压。此外，凸块或塞子可以施加在膜本身上以控制膜在MEMS装置的顶部或顶部电极上的着陆。

39. 发明授权

US08671151B2 Maintaining item-to-node mapping information in a distributed system 有权
标题翻译：在分布式系统中维护项目到节点映射信息
公开(公告)号：US08671151B2
公开(公告)日：2014-03-11
申请号：US11657778
申请日：2007-01-24
申请人： Vikram Joshi , Alexander Tsukerman , Arvind Nithrakashvap , Jia Shi , Tudor Bosman
发明人： Vikram Joshi , Alexander Tsukerman , Arvind Nithrakashvap , Jia Shi , Tudor Bosman
IPC分类号： G06F15/16
CPC分类号： G06F17/30557
摘要： A method and apparatus for maintaining an item-to-node mapping among nodes in a distributed cluster is provided. Each node maintains locally-stored system-state information indicating that node's understanding of which master nodes are alive and dead. Instead of employing a global item-to-node mapping, each node acts upon a locally determined mapping based on its locally-stored system-state information. For any two nodes with the same locally-stored system-state information, the locally determined mapping is the same. A node updates its locally-stored system-state information upon detecting a node failure or receiving a message from another node indicating different locally-stored system-state information. The new locally-stored system-state information is transmitted on a need-to-know basis, and consequently nodes with different item-to-node mappings may operate concurrently. Mechanisms to avoid nodes assuming conflicting ownership of items are employed, thus allowing node failures to propagate via asynchronous messaging instead of requiring a cluster-wide synchronization event.
摘要翻译：提供了一种用于在分布式集群中的节点之间维护项目到节点映射的方法和装置。每个节点维护本地存储的系统状态信息，指示节点了解哪些主节点存活和死亡。代替采用全局项目到节点映射，每个节点基于其本地存储的系统状态信息在本地确定的映射上作用。对于具有相同本地存储的系统状态信息的任何两个节点，本地确定的映射是相同的。当节点检测到节点故障或从另一节点接收到指示不同的本地存储的系统状态信息的消息时，节点更新其本地存储的系统状态信息。新的本地存储的系统状态信息是在需要知道的基础上传输的，因此具有不同项目到节点映射的节点可以同时运行。采用避免节点假设项目所有权冲突的机制，从而允许节点故障通过异步消息传播，而不需要群集范围的同步事件。

40. 发明申请

US20110212593A1 CMP Process Flow for MEMS 有权
标题翻译： CMP的CMP工艺流程
公开(公告)号：US20110212593A1
公开(公告)日：2011-09-01
申请号：US13036201
申请日：2011-02-28
申请人： Joseph Damian Gordon Lacey , Thomas L. Maguire , Vikram Joshi , Dennis J. Yost
发明人： Joseph Damian Gordon Lacey , Thomas L. Maguire , Vikram Joshi , Dennis J. Yost
IPC分类号： H01L21/02
CPC分类号： B81C1/00095 , B81B2203/04 , B81B2207/07 , B81C1/00611 , B81C2201/0104
摘要： The present invention generally relates to the formation of a micro-electromechanical system (MEMS) cantilever switch in a complementary metal oxide semiconductor (CMOS) back end of the line (BEOL) process. The cantilever switch is formed in electrical communication with a lower electrode in the structure. The lower electrode may be either blanket deposited and patterned or simply deposited in vias or trenches of the underlying structure. The excess material used for the lower electrode is then planarized by chemical mechanical polishing or planarization (CMP). The cantilever switch is then formed over the planarized lower electrode.
摘要翻译：本发明一般涉及在线路（BEOL）工艺的互补金属氧化物半导体（CMOS）后端中形成微机电系统（MEMS）悬臂开关。悬臂开关形成为与结构中的下电极电连通。下电极可以是毯式沉积和图案化或简单地沉积在底层结构的通孔或沟槽中。然后通过化学机械抛光或平面化（CMP）将用于下电极的多余材料平坦化。然后在平坦化的下电极上形成悬臂开关。

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