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31. 发明申请

US20130114635A1 Heating Elements For Multi-Wavelength DBR Laser 有权
标题翻译：多波长DBR激光加热元件
公开(公告)号：US20130114635A1
公开(公告)日：2013-05-09
申请号：US13292385
申请日：2011-11-09
申请人： Dmitri Vladislavovich Kuksenkov , Shenping Li , Hong Ky Nguyen , Chung-En Zah
发明人： Dmitri Vladislavovich Kuksenkov , Shenping Li , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01S5/125
CPC分类号： H01S5/0612 , H01S5/0261 , H01S5/06256 , H01S5/1096 , H01S5/1209 , H01S5/1218 , H01S5/1234 , H01S5/125
摘要： A multi-wavelength distributed Bragg reflector (DBR) semiconductor laser is provided where DBR heating elements are positioned over the waveguide in the DBR section and define an interleaved temperature profile that generates multiple distinct reflection peaks corresponding to distinct temperature dependent Bragg wavelengths associated with the temperature profile. Neighboring pairs of heating elements of the DBR heating elements positioned over the waveguide in the DBR section are spaced along the direction of the axis of optical propagation by a distance that is equal to or greater than the laser chip thickness b to minimize the impact of thermal crosstalk between distinct temperature regions of the interleaved temperature profile.
摘要翻译：提供了一种多波长分布布拉格反射器（DBR）半导体激光器，其中DBR加热元件位于DBR部分中的波导上方，并且限定了交错的温度分布，其产生对应于与温度相关的不同的温度相关布拉格波长的不同反射峰个人资料位于DBR部分的波导上的DBR加热元件的相邻的加热元件对沿着光学传播轴的方向间隔开等于或大于激光器芯片厚度b的距离，以最小化热的影响交错温度曲线的不同温度区域之间的串扰。

32. 发明申请

US20120252191A1 GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME 审中-公开
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US20120252191A1
公开(公告)日：2012-10-04
申请号：US13494110
申请日：2012-06-12
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

33. 发明申请

US20110243173A1 MQW LASER STRUCTURE COMPRISING PLURAL MQW REGIONS 有权
标题翻译： MQW激光结构包括多个MQW区域
公开(公告)号：US20110243173A1
公开(公告)日：2011-10-06
申请号：US13161962
申请日：2011-06-16
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01S5/343
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/041 , H01S5/20 , H01S5/2004 , H01S5/34333
摘要： Multi-quantum well laser structures are provided comprising active and/or passive MQW regions. Each of the MQW regions comprises a plurality of quantum wells and intervening barrier layers. Adjacent MQW regions are separated by a spacer layer that is thicker than the intervening barrier layers. The bandgap of the quantum wells is lower than the bandgap of the intervening barrier layers and the spacer layer. The active region may comprise active and passive MQWs and be configured for electrically-pumped stimulated emission of photons or it may comprises active MQW regions configured for optically-pumped stimulated emission of photons.
摘要翻译：提供了包括有源和/或无源MQW区域的多量子阱激光器结构。每个MQW区域包括多个量子阱和中间势垒层。相邻的MQW区域被间隔层隔开，该隔离层比中间的阻挡层厚。量子阱的带隙低于中间势垒层和间隔层的带隙。有源区可以包括有源和无源MQW，并且被配置用于电泵浦受激发射的光子，或者其可以包括配置用于光泵浦激发的光子发射的有源MQW区域。

34. 发明授权

US07615389B2 GaN lasers on ALN substrates and methods of fabrication 失效
标题翻译： ALN衬底上的GaN激光器和制造方法
公开(公告)号：US07615389B2
公开(公告)日：2009-11-10
申请号：US11893188
申请日：2007-08-15
申请人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
发明人： Rajaram Bhat , Jerome Napierala , Dmitry Sizov , Chung-En Zah
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/183 , H01S5/3201 , H01S5/3216 , H01S2301/173
摘要： Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga(In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer where the substrate, the lattice adjustment layer, the lower cladding region, the active waveguiding region, the upper cladding region, and the N and P type contact regions of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.
摘要翻译：提出了Ga（In）N基激光器结构及相关的制造方法，其中以Al（N）或GaN衬底形成Ga（In）N基半导体激光器结构，以满足在半导体结构中避免不适当拉伸应变的需要。根据本发明的一个实施例，在设置有AlGaN晶格调整层的AlN或GaN衬底上设置Ga（In）N基半导体激光器，其中衬底，晶格调整层，下包层区域，有源波导区域，上覆层区域和激光器的N和P型接触区域形成半导体激光器中的组成连续体。公开并要求保护附加实施例。

35. 发明申请

US20090246707A1 Semiconductor buried grating fabrication method 有权
标题翻译：半导体埋光栅制作方法
公开(公告)号：US20090246707A1
公开(公告)日：2009-10-01
申请号：US12079524
申请日：2008-03-27
申请人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
发明人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
IPC分类号： G03F7/00
CPC分类号： G03F7/0005 , G02B6/124 , G02B6/136 , H01S5/12
摘要： Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
摘要翻译：在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓光栅层。在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

36. 发明授权

US07502394B2 System and method for modulating a semiconductor laser 失效
标题翻译：用于调制半导体激光器的系统和方法
公开(公告)号：US07502394B2
公开(公告)日：2009-03-10
申请号：US11298367
申请日：2005-12-08
申请人： Martin H Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin H Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/10 , H01S3/13 , H01S3/00
CPC分类号： H04N9/3129 , H01S5/005 , H01S5/0092 , H01S5/06213 , H01S5/06251 , H01S5/06253 , H01S5/06256 , H04B10/54
摘要： Both a system and method are provided for modulating the intensity of an output beam generated by semiconductor laser. The exemplary system includes a source of pulsating current connected to the laser that generates a pulsating beam of laser light, an external modulator having an input that receives the pulsating beam, and an output controlled by pulsating control signal, wherein the output beam transmitted by the external modulator output is modulated by changing a relative phase angle between the pulsating current powering the laser, and the control signal of the external modulator over time. The external modulator may be an intensity-type modulator whose output is controlled by a gate signal having a constant phase, and the source of pulsating current powering the laser may be variable phase in order to modulate the output beam with an external modulator having a simple structure. Both the system and method are advantageously compatible with DFB lasers, and avoid wavelength drift and the consequent thermally induced patterning effect by powering the laser with a pulsating current having a constant duty cycle.
摘要翻译：提供了一种用于调制由半导体激光器产生的输出光束的强度的系统和方法。示例性系统包括连接到激光器的脉冲电流源，其产生脉冲激光束，外部调制器，其具有接收脉动光束的输入端，以及由脉动控制信号控制的输出，其中由通过改变为激光供电的脉动电流与外部调制器的控制信号之间的相对相位角随时间而调制外部调制器输出。外部调制器可以是强度型调制器，其输出由具有恒定相位的栅极信号控制，为激光供电的脉动电流源可以是可变相位，以便用具有简单的外部调制器调制输出光束结构体。系统和方法都有利地与DFB激光器兼容，并且通过用具有恒定占空比的脉动电流为激光器供电来避免波长漂移和随之而来的热诱导图案化效应。

37. 发明申请

US20070133629A1 Method and device for performing DBR laser wavelength modulation free of thermal effect 失效
标题翻译：用于执行无热效应的DBR激光波长调制的方法和装置
公开(公告)号：US20070133629A1
公开(公告)日：2007-06-14
申请号：US11297897
申请日：2005-12-08
申请人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/10 , H01S5/00 , H01S3/04
CPC分类号： H01S5/06256 , H01S5/0092 , H01S5/06253 , H04N9/3129
摘要： The present invention is directed to a method and system for providing a three-level current scheme to a semiconductor laser to control beam wavelength and laser temperature. A first current is received into a gain section of the semiconductor laser and at least one other current is received into a DBR and/or phase section of the semiconductor laser. This other current(s) is pulse-width modulated based upon a required temperature value. An output beam is generated by the semiconductor laser based upon the received first current and the received pulse-width modulated current(s).
摘要翻译：本发明涉及一种用于向半导体激光器提供三电平电流方案以控制光束波长和激光器温度的方法和系统。第一电流被接收到半导体激光器的增益部分中，并且至少一个其它电流被接收到半导体激光器的DBR和/或相位部分中。基于所需的温度值对其它电流进行脉冲宽度调制。基于所接收的第一电流和所接收的脉冲宽度调制电流，由半导体激光器产生输出光束。

38. 发明申请

US20060159139A1 System and method for modulating a semiconductor laser 失效
公开(公告)号：US20060159139A1
公开(公告)日：2006-07-20
申请号：US11298367
申请日：2005-12-08
申请人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
发明人： Martin Hu , Nobuhiko Nishiyama , Chung-En Zah
IPC分类号： H01S3/10
CPC分类号： H04N9/3129 , H01S5/005 , H01S5/0092 , H01S5/06213 , H01S5/06251 , H01S5/06253 , H01S5/06256 , H04B10/54
摘要： Both a system and method are provided for modulating the intensity of an output beam generated by semiconductor laser. The exemplary system includes a source of pulsating current connected to the laser that generates a pulsating beam of laser light, an external modulator having an input that receives the pulsating beam, and an output controlled by pulsating control signal, wherein the output beam transmitted by the external modulator output is modulated by changing a relative phase angle between the pulsating current powering the laser, and the control signal of the external modulator over time. The external modulator may be an intensity-type modulator whose output is controlled by a gate signal having a constant phase, and the source of pulsating current powering the laser may be variable phase in order to modulate the output beam with an external modulator having a simple structure. Both the system and method are advantageously compatible with DFB lasers, and avoid wavelength drift and the consequent thermally induced patterning effect by powering the laser with a pulsating current having a constant duty cycle.

39. 发明申请

US20130221223A1 SURFACE EMITTING MULTIWAVELENGTH DISTRIBUTED-FEEDBACK CONCENTRIC RING LASERS 审中-公开
标题翻译：表面发射多波长分布式反馈浓度环激光
公开(公告)号：US20130221223A1
公开(公告)日：2013-08-29
申请号：US13772694
申请日：2013-02-21
申请人： Catherine Genevieve Caneau , Feng Xie , Chung-En Zah
发明人： Catherine Genevieve Caneau , Feng Xie , Chung-En Zah
IPC分类号： H01S5/32 , G01N21/59
摘要： Multi-surface emitting mid-IR multiwavelength distributed-feedback quantum cascade ring lasers laid out in a concentric circle are disclosed. The lasers utilize quantum cascade core designs to produce optical gain in the mid-infrared region and may generate several wavelengths simultaneously or sequentially. Methods of making along with methods of using such devices are also disclosed.
摘要翻译：公开了布置在同心圆中的多表面发射中IR多波长分布反馈量子级联环形激光器。激光器利用量子级联核心设计来在中红外区域产生光学增益，并且可以同时或顺序地产生几个波长。还公开了使用这种装置的方法的方法。

40. 发明申请

US20120236890A1 P-TYPE ISOLATION REGIONS ADJACENT TO SEMICONDUCTOR LASER FACETS 有权
标题翻译： P型隔离区域与半导体激光表面相邻
公开(公告)号：US20120236890A1
公开(公告)日：2012-09-20
申请号：US13050058
申请日：2011-03-17
申请人： Catherine G. Caneau , Feng Xie , Chung-En Zah
发明人： Catherine G. Caneau , Feng Xie , Chung-En Zah
IPC分类号： H01S5/343 , H01L33/00 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/06256 , H01S5/1017 , H01S5/168 , H01S5/2224 , H01S5/2231
摘要： A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated laser sections extending along a waveguide axis of the laser. An active waveguide core is sandwiched between upper and lower n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser. Laser structures are also contemplated where isolation regions are solely provided at the window facet sections of the laser to provide vertical isolation in the facet sections, to reduce the current into the facet regions of the laser, and help minimize potentially harmful facet heating.
摘要翻译：提供了量子级联激光器及其制造方法。量子级联激光器包括沿着激光器的波导轴线延伸的一个或多个p型电隔离区域和多个电隔离的激光器部分。有源波导芯夹在上，下n型覆层之间，有源芯和上，下n型覆层延伸穿过量子级联激光器的电隔离激光器部分。上部n型包覆层的一部分包括足够的p型掺杂剂以成为p型并且已经成为电绝缘区域，其沿厚度的上部n型包覆层的至少一部分沿突出部分离量子级联激光器的部分。还设想了激光结构，其中仅在激光器的窗口部分处提供隔离区域以在小平面部分中提供垂直隔离，以减少进入激光器的小面区域的电流，并且帮助最小化潜在的有害面积加热。

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