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    • 31. 发明申请
    • Confined plasma with adjustable electrode area ratio
    • 密闭等离子体具有可调电极面积比
    • US20060278340A1
    • 2006-12-14
    • US11152022
    • 2005-06-13
    • Andreas Fischer
    • Andreas Fischer
    • C23F1/00
    • H01J37/32623H01J37/32642
    • A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a first set of confinement rings, a second set of confinement rings, and a ground extension. The top and bottom electrodes, the first and second sets of confinement rings, and the ground extension are all enclosed within the chamber. The first set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a first volume between the bottom electrode and the top electrode. The second set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a second volume between the bottom electrode and the top electrode. The second volume is at least greater than the first volume. A ground extension is adjacent to and surrounds the bottom electrode. The first set of confinement rings and the second set of confinement rings are capable of being raised and lowered to extend into a region above the ground extension.
    • 等离子体反应器包括腔室,底部电极,顶部电极,第一组约束环,第二组约束环和地面延伸部。 顶部和底部电极,第一组和第二组约束环和接地延伸部都被封闭在腔室内。 第一组限制环基本上平行于底部电极和顶部电极并围绕底部电极和顶部电极之间的第一容积。 第二组限制环基本上平行于底部电极和顶部电极并围绕底部电极和顶部电极之间的第二体积。 第二卷至少大于第一卷。 接地延伸部分邻近并包围底部电极。 第一组限制环和第二组限制环能够被升高和降低以延伸到地面延伸部上方的区域中。
    • 35. 发明申请
    • Segmented radio frequency electrode apparatus and method for uniformity control
    • 分段射频电极装置及均匀性控制方法
    • US20050130620A1
    • 2005-06-16
    • US10735881
    • 2003-12-16
    • Andreas Fischer
    • Andreas Fischer
    • H01J37/32H01L20060101H04B1/28
    • H01J37/32082H01J37/32532
    • A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode. At least one dual frequency radio frequency power source outputs RF power at a first frequency and a second frequency. The first frequency and the second frequency are different such that at least one radio frequency switch routes at least the first frequency or the second frequency from the at least one dual frequency source to the first electrode, the second electrode, or the first electrode and the second electrode.
    • 用于等离子体处理的分段射频(RF)电源电极。 电极包括第一电极,围绕第一电极的第二电极和插在第一电极和第二电极之间的电介质材料。 电介质材料将第一电极与第二电极电隔离。 至少一个双频射频功率源以第一频率和第二频率输出RF功率。 第一频率和第二频率是不同的,使得至少一个射频开关至少将第一频率或第二频率从至少一个双频源引导到第一电极,第二电极或第一电极,以及 第二电极。
    • 38. 发明授权
    • System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
    • 使用等离子体处理室中的单频RF功率处理晶片的系统,装置和方法
    • US06562190B1
    • 2003-05-13
    • US09685051
    • 2000-10-06
    • Andras KuthiAndreas Fischer
    • Andras KuthiAndreas Fischer
    • H05H100
    • H01J37/32146H01J37/32082
    • The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and a match network. The modulated RF power generator is arranged to generate a modulated RF power. The plasma processing chamber is arranged to receive the modulated RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma processing chamber includes an electrostatic chuck for holding the wafer in place with the electrostatic chuck including a first electrode disposed under the wafer for receiving the modulated RF power. The plasma processing chamber further includes a second electrode disposed over the wafer. The modulated RF power generates plasma and ion bombardment energy for processing the wafer. The match network is coupled between the modulated RF power generator and the plasma processing chamber to receive and transmit the modulated RF power from the modulated RF power generator to the plasma processing chamber. The match network is further configured to match an impedance of the modulated RF power generator to the internal impedance of the plasma processing chamber.
    • 本发明提供了一种使用等离子体处理室中的单频RF功率来处理晶片的系统,装置和方法。 等离子体处理系统包括调制的RF功率发生器,等离子体处理室和匹配网络。 经调制的RF功率发生器被布置成产生调制的RF功率。 等离子体处理室被布置成接收用于处理晶片的调制RF功率,其特征在于等离子体处理期间的内部阻抗。 等离子体处理室包括用于将晶片保持在适当位置的静电卡盘,静电卡盘包括设置在晶片下方的用于接收调制RF功率的第一电极。 等离子体处理室还包括设置在晶片上的第二电极。 调制的RF功率产生用于处理晶片的等离子体和离子轰击能量。 匹配网络耦合在调制的RF功率发生器和等离子体处理室之间,以将调制的RF功率从调制的RF功率发生器接收并传输到等离子体处理室。 匹配网络还被配置为将调制的RF功率发生器的阻抗与等离子体处理室的内部阻抗相匹配。
    • 39. 发明授权
    • Plasma processing system apparatus, and method for delivering RF power to a plasma processing
    • 等离子体处理系统装置和用于将等离子体处理的RF功率传送的方法
    • US06242360B1
    • 2001-06-05
    • US09342969
    • 1999-06-29
    • Andreas FischerBabak KadkhodayanAndras Kuthi
    • Andreas FischerBabak KadkhodayanAndras Kuthi
    • H01L2100
    • H01J37/32174H01J37/32082H01J37/32577
    • The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system includes an RF generator, a plasma chamber, a match network box, a first cable, a second cable, and means for electrically isolating the match network box. The RF generator is generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.
    • 本发明提供了一种用于向等离子体处理室提供RF功率的等离子体处理装置,系统和方法。 等离子体处理系统包括RF发生器,等离子体室,匹配网络盒,第一电缆,第二电缆以及用于电气隔离匹配网络盒的装置。 RF发生器产生用于传输到等离子体室的RF功率。 等离子体室接收用于处理晶片的RF功率,其特征在于等离子体处理期间的内部阻抗。 等离子体室具有用于返回RF电流的一个或多个壁。 匹配网络盒能够接收RF电流并产生与等离子体室的内部阻抗匹配于RF发生器的阻抗的阻抗。 第一条电缆耦合在RF发生器和匹配网络盒之间,用于在RF发生器和匹配网络盒之间传输RF功率。 第二电缆耦合在匹配网络盒和等离子体室之间,用于在匹配网络和等离子体室之间传输RF功率。 第二电缆提供用于从等离子体室到匹配网络盒的RF返回电流的返回路径。 电隔离装置将匹配网络盒与等离子体室的电气接触电隔离,使得仅第二电缆提供用于从等离子体室到匹配网络盒的RF返回电流的返回路径。