专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20060237760A1 Thin-film capacitative element and electronic circuit and electronic equipment including the same 审中-公开
标题翻译：薄膜电容元件与电子电路及电子设备相同
公开(公告)号：US20060237760A1
公开(公告)日：2006-10-26
申请号：US10546498
申请日：2004-02-20
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： H01L27/108
CPC分类号： H01G4/1218 , C01G29/006 , C01P2002/02 , C01P2002/04 , C01P2002/50 , C01P2004/84 , C01P2006/40 , C04B35/475 , C04B2235/3213 , C04B2235/787 , H01G4/33 , H01L28/55
摘要： A thin film capacitive element according to the present invention includes between a first electrode layer and a second electrode layer a dielectric layer formed of a dielectric material containing a bismuth layer structured compound having a composition represented by the stoichiometric compositional formula: (Bi2O2)2+ (Am−1BmO3m+1)2−, where a symbol m is a positive integer, a symbol A is at least one element selected from a group consisting of sodium, potassium, lead, barium, strontium, calcium and bismuth, and a symbol B is at least one element selected from a group consisting of iron, cobalt, chromium, gallium, titanium, niobium, tantalum, antimony, vanadium, molybdenum and tungsten. The thin film capacitive element having the above identified configuration can be made thin and has an excellent temperature compensating characteristic.
摘要翻译：根据本发明的薄膜电容元件在第一电极层和第二电极层之间包括由包含由化学计量组成式表示的组成的铋层结构化合物的电介质材料形成的电介质层：（Bi < （O 2）2 +（3-m-1）m O 3 O 3 符号A为选自钠，钾，铅，钡，锶等的至少一种元素，其中符号m为正整数，符号A为选自钠，钾，铅，钡，锶，钙和铋，符号B是选自铁，钴，铬，镓，钛，铌，钽，锑，钒，钼和钨中的至少一种元素。具有上述结构的薄膜电容元件可以变薄并且具有优异的温度补偿特性。

32. 发明申请

US20060126267A1 Thin film capacitor for reducing power supply noise 审中-公开
标题翻译：薄膜电容器，用于降低电源噪声
公开(公告)号：US20060126267A1
公开(公告)日：2006-06-15
申请号：US10534728
申请日：2003-11-11
申请人： Yukio Sakashita , Hiroshi Funakubo
发明人： Yukio Sakashita , Hiroshi Funakubo
IPC分类号： H01G4/228
CPC分类号： H01G4/10 , H01G4/228 , H01G4/33 , H01L23/50 , H01L27/016 , H01L2924/0002 , H01L2924/15311 , H01L2924/19104 , H01L2924/3011 , H01L2924/00
摘要： A decoupling capacitor connected to a power source for reducing power source noise. The capacitor has a dielectric thin film 8, the dielectric thin film 8 is comprised of a bismuth layer structured compound with ac axis oriented substantially perpendicularly to the plane of a thin film forming substrate, the bismuth layer structured compound is expressed by the formula (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3m+3, the symbol m in said formula is a positive number, the symbol A is at least one element selected from Na, K, Pb, Ba, Sr, Ca, and Bi, and the symbol B is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo, and W
摘要翻译：连接到电源的去耦电容器，用于降低电源噪声。电容器具有电介质薄膜8，电介质薄膜8由交流轴基本上垂直于薄膜形成衬底的平面的铋层结构化合物组成，铋层结构化合物由式（Bi （A）第二个第二个和第二个第二个和第二个， SUB> 3m + 1 2 - 或 - - - - - - - - - - - - - - - 3m + 3 ，公式中的符号m为正数，符号A为选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，符号 B是选自Fe，Co，Cr，Ga，Ti，Nb，Ta，Sb，V，Mo和W中的至少一种元素

33. 发明申请

US20060098385A1 Thin film capacity element composition, high-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, electronic circuit and electronic apparatus 有权
标题翻译：薄膜电容元件组成，高电容率绝缘膜，薄膜电容元件，薄膜多层电容器，电子电路和电子设备
公开(公告)号：US20060098385A1
公开(公告)日：2006-05-11
申请号：US10547134
申请日：2003-11-18
申请人： Yukio Sakashita , Hiroshi Funakubo
发明人： Yukio Sakashita , Hiroshi Funakubo
IPC分类号： H01G2/00
CPC分类号： H01G4/33 , H01G4/1218 , H01G4/20 , H01L21/31691
摘要： A thin film capacity element composition includes a first bismuth layer-structured compound having positive temperature characteristics, that a specific permittivity rises as the temperature rises, in at least a part of a predetermined temperature range and a second bismuth layer-structured compound having negative temperature characteristics, that a specific permittivity declines as a temperature rises, in at least a part of said predetermined temperature range at any mixing ratio; wherein the bismuth layer-structured compound is expressed by a composition formula of CaxSr(1-x)Bi4Ti4O15.
摘要翻译：薄膜电容元件组合物包括具有正温度特性的第一铋层结构化合物，在预定温度范围的至少一部分中比电容率随温度升高而升高，第二铋层结构化合物具有负温度在所述预定温度范围的任何混合比的至少一部分中，相对介电常数随着温度升高而降低的特性; 其中所述铋层结构化合物由以下组成式表示：Ca x Sr 1（1-x）2 Bi 4 Si 4 15 。

34. 发明授权

US06876536B2 Thin film capacitor and method for fabricating the same 有权
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US06876536B2
公开(公告)日：2005-04-05
申请号：US10331140
申请日：2002-12-27
申请人： Yukio Sakashita , Kyung-Ku Choi
发明人： Yukio Sakashita , Kyung-Ku Choi
IPC分类号： H01G4/10 , H01G4/12 , H01G4/228 , H01G4/32 , H01G4/33 , H01L21/02 , H01L27/01 , H01L29/76
CPC分类号： H01G4/33 , H01G4/10 , H01G4/228 , H01L27/016 , H01L28/57 , H01L28/65
摘要： A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.
摘要翻译：一种薄膜电容器，包括第一电极结构体，第二电极结构体和设置在第一和第二电极结构体之间并且包含铋层结构化合物的电介质薄膜。与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。结果，电介质薄膜被天然地取向为使其c轴基本垂直于电极结构体。当在第一和第二电极结构体之间施加电压时，由于电场方向基本上与铋层结构化合物的c轴重合，所以可以防止铋层结构化合物表现出铁电性质，充分展现了顺电特性。此外，氧化铋层（Bi 2 O 2）2+充当绝缘层，从而提高电介质薄膜的绝缘性，同时使薄膜更薄。

35. 发明授权

US5521456A Vibrating gyroscope 失效
标题翻译：振动陀螺仪
公开(公告)号：US5521456A
公开(公告)日：1996-05-28
申请号：US352565
申请日：1994-12-09
申请人： Akira Mori , Yukio Sakashita , Takeshi Nakamura
发明人： Akira Mori , Yukio Sakashita , Takeshi Nakamura
IPC分类号： G01C19/56 , F16F15/02 , F16F15/073 , G01C19/5663 , H01L41/08
CPC分类号： G01C19/5663 , F16F15/02 , F16F15/073
摘要： The vibrating gyroscope includes, for example, a regular triangular prism-shaped vibrating body. The vibrating body is formed with a material which generally generates mechanical vibration such as elinver, ceramics. The piezoelectric elements are respectively formed to the three sidefaces of the vibrating body. An oscillation circuit is connected between the two piezoelectric elements and the other piezoelectric element. Further, two U-shape supporting members made of metal wire are fixed to the ridge-line portions of the vicinity of the nodal points of the vibrating body. The both ends of the two supporting members are fixed to the rectangular-shaped supporting body. The supporting body has a cutting portion piercing through it from its one surface to the other or a groove portion as a suppressing means for suppressing the interference of vibrations between the fixing points of the ends of one supporting member and those of the other supporting member.
摘要翻译：振动陀螺仪包括例如规则的三角形棱柱形振动体。振动体由通常产生机械振动的材料形成，例如埃尔诺维尔，陶瓷。压电元件分别形成在振动体的三个侧面上。在两个压电元件和另一个压电元件之间连接振荡电路。此外，由金属线制成的两个U形支撑构件固定到振动体的节点附近的脊线部分。两个支撑构件的两端固定在矩形支撑体上。支撑体具有从其一个表面穿过其中的切割部分或作为抑制装置的凹槽部分，用于抑制一个支撑部件的端部和另一个支撑部件的端部的固定点之间的振动的干扰。

36. 发明授权

US08828524B2 Layered structure and piezoelectric device using the same 有权
标题翻译：分层结构及使用其的压电器件
公开(公告)号：US08828524B2
公开(公告)日：2014-09-09
申请号：US13041011
申请日：2011-03-04
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： B32B3/10 , H01L41/45 , G03F7/20 , B32B9/00
CPC分类号： B32B3/10 , B32B9/00 , G03F7/20 , H01L41/45 , Y10T428/24612 , Y10T428/24802 , Y10T428/24851 , Y10T428/24893 , Y10T428/24909
摘要： A layered structure, including a flexible resin substrate and a composite piezoelectric film formed on the resin substrate and constituted by an organic polymer resin matrix and a plurality of inorganic piezoelectric bodies dispersed in the matrix.
摘要翻译：一种分层结构，包括柔性树脂基板和形成在树脂基板上并由有机聚合物树脂基体和分散在基体中的多个无机压电体构成的复合压电薄膜。

37. 发明授权

US08030828B2 Piezoelectric device, process for producing the piezoelectric device, and liquid discharge device 有权
标题翻译：压电元件，压电元件的制造方法以及液体排出装置
公开(公告)号：US08030828B2
公开(公告)日：2011-10-04
申请号：US12116094
申请日：2008-05-06
申请人： Hiroyuki Kobayashi , Yukio Sakashita
发明人： Hiroyuki Kobayashi , Yukio Sakashita
IPC分类号： H01L41/08
CPC分类号： B41J2/14201 , H01L41/0805 , H01L41/0973 , H01L41/1871 , H01L41/1876 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the axis makes an angle θm satisfying the condition that −45 degrees
摘要翻译：压电装置包括压电薄膜和沿压电薄膜的厚度方向向压电薄膜施加电场的电极。该压电膜含有铁电相，其中由自发偏振轴和轴确定的平面的厚度方向和法线成一角度;满足-45度<＆gt;; m <+ 45度的条件，并且＆thetas; m≠0度。此外，自发偏振轴或轴可以垂直于压电膜的厚度方向。

38. 发明授权

US07745869B2 Thin film capacitance element composition, high permittivity insulation film, thin film capacitance element, thin film multilayer capacitor and production method of thin film capacitance element 有权
标题翻译：薄膜电容元件组成，高介电常数绝缘膜，薄膜电容元件，薄膜多层电容器及薄膜电容元件的制作方法
公开(公告)号：US07745869B2
公开(公告)日：2010-06-29
申请号：US10542956
申请日：2004-01-16
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L29/00
CPC分类号： H01G4/1218 , B82Y30/00 , C01G29/00 , C01P2002/20 , C01P2002/52 , C01P2004/64 , C01P2006/40 , C04B35/475 , C04B35/6264 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3224 , C04B2235/441 , C04B2235/6585 , C04B2235/787 , C04B2235/79 , H01B3/12 , H01G4/30
摘要： A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3m+3, wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3m+3, and the excessive content of Bi is in a range of 0
摘要翻译：一种薄膜电容元件组合物，其中具有相对于衬底表面垂直取向的c轴的铋层化合物由（Bi 2 O 2）2+（Am-1BmO 3m + 1）2-或Bi 2 Am-1BmO 3 m的组成式表示 +3，其中“m”是偶数，“A”是选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，“B”是选自Fe，Co中的至少一种元素，Cr，Ga，Ti，Nb，Ta，Sb，V，Mo和W; 相对于（Bi 2 O 2）2+（Am-1BmO 3m + 1）2-或Bi 2 Am-1BmO 3 m + 3的组成式，铋层化合物中的Bi过多，Bi的过量含量为0 Bi中Bi <0.5×m mol /

39. 发明申请

US20090111279A1 FUNCTIONAL FILM CONTAINING STRUCTURE AND METHOD OF MANUFACTURING FUNCTIONAL FILM 失效
标题翻译：功能膜包含结构和制造功能膜的方法
公开(公告)号：US20090111279A1
公开(公告)日：2009-04-30
申请号：US11916642
申请日：2006-06-05
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： H01L21/314 , B32B7/00 , B32B11/04 , B32B38/00 , B32B17/06
CPC分类号： H01L21/314 , H01L21/31691 , H01L21/318 , H01L21/76251 , H01L39/2422 , H01L41/313 , H01L41/314 , Y10T156/1158 , Y10T428/31815
摘要： A method of manufacturing a functional film by which a functional film formed on a film formation substrate can be easily peeled from the film formation substrate. The method includes the steps of: (a) forming a separation layer on a substrate by using an inorganic material which is decomposed to generate a gas by being applied with an electromagnetic wave; (b) forming a layer to be peeled containing a functional film, which is formed by using a functional material, on the separation layer; and (c) applying the electromagnetic wave toward the separation layer so as to peel the layer to be peeled from the substrate or reduce bonding strength between the layer to be peeled and the substrate.
摘要翻译：可以容易地从成膜基板剥离形成在成膜基板上的功能膜的功能膜的制造方法。该方法包括以下步骤：（a）通过使用通过施加电磁波分解产生气体的无机材料在基板上形成分离层; （b）在分离层上形成含有通过使用功能性材料形成的功能性膜的被剥离层; 和（c）将电磁波施加到分离层，以剥离要从基板上剥离的层，或降低被剥离层与基板之间的接合强度。

40. 发明申请

US20080081216A1 Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus 有权
标题翻译：用于形成膜，压电膜，压电装置和液体排出装置的方法
公开(公告)号：US20080081216A1
公开(公告)日：2008-04-03
申请号：US11905130
申请日：2007-09-27
申请人： Takamichi Fujii , Yukio Sakashita
发明人： Takamichi Fujii , Yukio Sakashita
IPC分类号： H01L41/00 , C23C16/00
CPC分类号： C23C14/088 , B41J2/161 , B41J2/1646 , C23C14/08 , C23C14/345 , C23C14/548 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs−Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)≧400 (1) −0.2Ts+100
摘要翻译：成膜条件是根据成膜温度Ts（℃），作为在时间上等离子体中的等离子体电位Vs（V））之间的差的差Vs-Vf（V）的关系来确定的成膜和浮动电位Vf（V），以及成膜的特性。对于含有至少一种含Pb的钙钛矿型氧化物的压电膜，优选在满足以下公式（1）和（2）的范围内确定成膜条件：<β直列式 description =“In-line Formulas”end =“lead”？> Ts（°C。）> = 400（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> ？in-line-formula description =“In-line Formulas”end =“lead”？> - 0.2Ts + 100

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式