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31. 发明授权

US08110248B2 Fuel cell structure and method of manufacturing same 有权
标题翻译：燃料电池结构及其制造方法
公开(公告)号：US08110248B2
公开(公告)日：2012-02-07
申请号：US11884234
申请日：2006-02-14
申请人： Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano , Satoshi Yoshida , Yukihisa Katayama , Toru Sugiyama
发明人： Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano , Satoshi Yoshida , Yukihisa Katayama , Toru Sugiyama
IPC分类号： H01M4/96
CPC分类号： H01M8/0234 , H01M4/8817 , H01M4/96 , H01M2008/1095 , Y02P70/56
摘要： A fuel cell structure comprises a diffusion layer and/or a catalyst layer which are made of a carbonaceous porous material having a nano-size structure, such as carbon nanowall (CNW). A method of manufacturing the structure is also disclosed. The structure and method simplify the process of manufacturing a fuel cell electrode comprised of an electrode catalyst layer and a gas diffusion layer. The electrical conductivity of the catalyst layer is increased and the diffusion efficiency of the diffusion layer is improved, whereby the electricity generation efficiency of the fuel cell can be improved.
摘要翻译：燃料电池结构包括由具有纳米尺寸结构的碳质多孔材料（例如碳纳米壁（CNW））制成的扩散层和/或催化剂层。还公开了一种制造该结构的方法。该结构和方法简化了制造由电极催化剂层和气体扩散层组成的燃料电池电极的工艺。催化剂层的导电性提高，扩散层的扩散效率提高，能够提高燃料电池的发电效率。

32. 发明申请

US20110114499A1 METHOD FOR PRODUCING GRAPHENE 有权
标题翻译：生产石墨的方法
公开(公告)号：US20110114499A1
公开(公告)日：2011-05-19
申请号：US12736268
申请日：2009-03-23
申请人： Masaru Hori , Hiroyuki Kano
发明人： Masaru Hori , Hiroyuki Kano
IPC分类号： C01B31/00 , C25B1/00 , B82Y40/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/184
摘要： To provide a simple process for producing graphene.A graphene production apparatus 100 has a vessel 10 and, attached thereto, an immersion electrode 20 and a non-immersion electrode 30. The immersion electrode has an electrode covering 20c and an electrode main body 20e, and the non-immersion electrode has a covering 30c and an electrode main body 30e. An argon-feeding conduit 40 is disposed so as to inject argon into the vessel 10 around the electrode main body 30e. Ethanol is supplied in such an amount that the liquid surface completely covers the electrode main body 20e of the immersion electrode 20 and does not reach the electrode main body 30e of the non-immersion electrode 30. The electrode main body 20e is formed from, for example, iron, nickel, or cobalt. Thus, a 60-Hz AC voltage is applied to the electrode main body 20e immersed in the liquid; i.e., below the ethanol surface, and to the electrode main body 30e located above the liquid, while argon gas is supplied through the argon-feeding conduit 40. As a result, a gas-liquid plasma generates, to thereby induce decomposition of ethanol, etc., whereby graphene is yielded. The graphene disperses in ethanol.
摘要翻译：提供生产石墨烯的简单工艺。石墨烯制造装置100具有容器10，并附接有浸渍电极20和非浸没电极30.浸渍电极具有电极覆盖层20c和电极主体20e，非浸渍电极具有覆盖层 30c和电极主体30e。氩供给导管40设置成在电极主体30e的周围向容器10内注入氩。乙醇的供给量使得液面完全覆盖浸没电极20的电极主体20e，并且不会到达非浸没电极30的电极主体30e。电极主体20e由例如，铁，镍或钴。因此，向浸没在液体中的电极主体20e施加60Hz的交流电压，即位于乙醇表面以下的电极主体30e和位于液体上方的电极主体30e，同时通过氩供给导管40供给氩气。结果，产生气液等离子体，从而导致乙醇分解，等等，由此产生石墨烯。石墨烯分散在乙醇中。

33. 发明申请

US20110045207A1 METHOD FOR PRODUCING CARBON NANOWALLS 审中-公开
标题翻译：生产碳纳米管的方法
公开(公告)号：US20110045207A1
公开(公告)日：2011-02-24
申请号：US12450399
申请日：2008-03-24
申请人： Masaru Hori , Mineo Hiramatsu , Hioryuki Kano
发明人： Masaru Hori , Mineo Hiramatsu , Hioryuki Kano
IPC分类号： C23C16/32 , C23C16/50 , B82Y30/00 , B82Y40/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/18
摘要： To improve the crystallinity of carbon nanowalls.The method of the invention for producing carbon nanowalls, includes forming carbon nanowalls on a surface of a base in a plasma atmosphere containing hydrogen and a raw material containing at least carbon and fluorine as its constituent elements, oxygen plasma is added to the plasma atmosphere. The hydrogen plasma was generated through injecting, to the plasma generation site, hydrogen radicals generated at a site different from the plasma atmosphere. The raw material is at least one member selected from among C2F6, CF4, and CHF3.
摘要翻译：提高碳纳米管的结晶度。本发明的碳纳米管的制造方法包括在含有氢的等离子体气氛中，在至少含有碳和氟的原料的基础表面形成碳纳米壁作为构成元素，在等离子体气氛中添加氧等离子体。通过向等离子体产生位点注入在与等离子体气氛不同的位置产生的氢自由基来产生氢等离子体。原料是选自C2F6，CF4和CHF3中的至少一种。

34. 发明申请

US20100093179A1 PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US20100093179A1
公开(公告)日：2010-04-15
申请号：US12521184
申请日：2007-12-20
申请人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/3065 , H01L21/306 , H01L21/3105
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02252 , H01L21/30604 , H01L21/3065 , H01L21/31111 , H01L21/31116 , H01L29/66818
摘要： A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.
摘要翻译：图案形成方法包括制备包括硅的目标物体，其中形成有初始图案并具有第一线宽度; 在等离子体处理装置的处理室内的硅表面上进行等离子体氧化处理，由此在初始图案的表面上形成氧化硅膜; 并除去氧化硅膜。图案形成方法被配置为反复进行氧化硅膜的形成和氧化硅膜的去除，以形成目标物体上具有比第一线宽窄的第二线宽的物镜图案。

35. 发明申请

US20100009242A1 CARBON NANOWALL WITH CONTROLLED STRUCTURE AND METHOD FOR CONTROLLING CARBON NANOWALL STRUCTURE 审中-公开
标题翻译：碳纳米管具有控制结构和控制碳纳米结构的方法
公开(公告)号：US20100009242A1
公开(公告)日：2010-01-14
申请号：US12374844
申请日：2007-07-25
申请人： Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano , Toru Sugiyama , Yuichiro Hama
发明人： Masaru Hori , Mineo Hiramatsu , Hiroyuki Kano , Toru Sugiyama , Yuichiro Hama
IPC分类号： H01M4/86 , C01B31/02 , B01J32/00
CPC分类号： B01J21/185 , B82Y30/00 , B82Y40/00 , C01B32/18 , H01M4/9083 , H01M4/926 , Y10T428/24355
摘要： Provided is a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall (CNW) walls so that its surface area and crystallinity are controlled. Also provided is a carbon nanowall (CNW) with a high surface arca and a carbon nanowall (CNW) with a high crystallinity, both of which have a controlled structure. According to the present invention, provided are: (1) a carbon nanowall, characterized by having a wall surface area of 50 cm2/cm2-substrate·μm or more; (2) a carbon nanowall, characterized by having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm−1 or less: and (3) a carbon nanowall, characterized by having not only a wall surface area of 50 cm2/cm2-substrate·μm or more but also a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 14.5 nm is 85 cm−1 or less.
摘要翻译：提供了一种通过改变碳纳米壁（CNW）壁之间的间距来控制其表面积和结晶度来控制具有改善的高电位耐腐蚀性的碳纳米壁（CNW）结构的方法。还提供具有高表面积的碳纳米壁（CNW）和具有高结晶度的碳纳米壁（CNW），两者都具有受控的结构。根据本发明，提供：（1）一种碳纳米壁，其特征在于，具有50cm 2 / cm 2以上的基板的壁面积以上; （2）碳纳米壁，其特征在于具有结晶度使得以514.5nm的照射激光波长测量的拉曼光谱中的D带半值宽度为85cm -1以下：（3）碳纳米壁，其特征在于，通过不仅具有50cm 2 / cm 2以上的壁面积等于或大于50的壁面积，而且结晶度使得以14.5nm的照射激光波长测量的拉曼光谱中的D带半值宽度为85cm -1 或更少。

36. 发明申请

US20090263919A1 PLASMA OXIDATION PROCESSING METHOD 有权
标题翻译：等离子体氧化处理方法
公开(公告)号：US20090263919A1
公开(公告)日：2009-10-22
申请号：US12439019
申请日：2007-08-27
申请人： Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
发明人： Masaru Hori , Toshihiko Shiozawa , Yoshiro Kabe , Junichi Kitagawa
IPC分类号： H01L21/66 , H01L21/316 , B05C11/00
CPC分类号： H01L21/31662 , C23C8/10 , C23C8/36 , H01L21/02238 , H01L21/02252 , H01L22/20
摘要： A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm−3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.
摘要翻译：进行等离子体氧化处理，在目标物体的表面形成氧化硅膜，其中使用等离子体，其中O（1D2）自由基密度为1×10 12 [cm -3]以上，由含有氧的工艺气体室等离子体处理装置。在等离子体氧化过程中，通过VUV单色仪63测量等离子体中的O（1D2）自由基密度，并对等离子体处理条件进行校正。

37. 发明授权

US5188706A Method of manufacturing an X-ray exposure mask and device for controlling the internal stress of thin films 失效
标题翻译：制造X射线曝光掩模的方法和用于控制薄膜内应力的装置
公开(公告)号：US5188706A
公开(公告)日：1993-02-23
申请号：US494397
申请日：1990-03-16
申请人： Masaru Hori , Masamitsu Itoh
发明人： Masaru Hori , Masamitsu Itoh
IPC分类号： B81B3/00 , B81C1/00 , G03F1/22 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30
CPC分类号： G03F1/22 , B81C1/00666 , B81C2201/017
摘要： An X-ray mask can be manufactured by forming an X-ray transmitting thin film on a mask support, forming an X-ray absorber thin film on the X-ray transmitting thin film, and patterning the X-ray absorber thin film with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film.

38. 发明授权

US09452481B2 Reactive-species supply device and surface treatment apparatus 有权
标题翻译：反应物种供应装置和表面处理装置
公开(公告)号：US09452481B2
公开(公告)日：2016-09-27
申请号：US13807204
申请日：2011-06-30
申请人： Masaru Hori , Hiroyuki Kano , Kazuaki Mori , Nobuyuki Nakane , Toshimitsu Watanabe , Joji Isozumi
发明人： Masaru Hori , Hiroyuki Kano , Kazuaki Mori , Nobuyuki Nakane , Toshimitsu Watanabe , Joji Isozumi
IPC分类号： B23H1/00 , H05H1/48
CPC分类号： B23H1/00 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： A reactive-species supply device is configured to supply a treatment gas to an electric discharge space that is formed by at least one pair of electrodes, for thereby supplying at least a reactive species formed in a plasma, to an object through a reactive-species output port. The reactive-species supply device includes (a) a reactive-species outlet passage disposed between the electric discharge space and the reactive-species output port and (b) an earth ground member disposed in a portion of the reactive-species outlet passage. The portion of the reactive-species outlet passage is distant, by a given distance, from the reactive-species output port. Also disclosed is a surface treatment apparatus that includes the reactive-species supply device.
摘要翻译：反应物种供应装置被配置为将处理气体供应到由至少一对电极形成的放电空间，从而通过反应物种将至少一种形成在等离子体中的反应性物质供应给物体输出端口反应物种供应装置包括（a）设置在放电空间和反应物种输出端口之间的反应物种出口通道和（b）设置在反应物种出口通道的一部分中的接地构件。反应物种出口通道的部分距离反应物种输出端口相距一定距离。还公开了包括反应物种供应装置的表面处理装置。

39. 发明授权

US09041937B2 Interference measurement device and measurement method 有权
标题翻译：干涉测量装置及测量方法
公开(公告)号：US09041937B2
公开(公告)日：2015-05-26
申请号：US13577044
申请日：2011-02-02
申请人： Masaru Hori , Masafumi Ito , Yasuhiro Higashijima , Takayuki Ohta
发明人： Masaru Hori , Masafumi Ito , Yasuhiro Higashijima , Takayuki Ohta
IPC分类号： G01B11/02 , G01B9/02 , G01K11/00
CPC分类号： G01B9/02023 , G01B9/02058 , G01B9/0209 , G01K11/00
摘要： [Problem to be Solved] To improve the measurement accuracy of an interference measurement device which utilizes interference of light.[Means for Solution] An interference measurement device includes a light source 10 for emitting supercontinuum light (SC light), an optical fiber coupler 11 for splitting the SC light into measurement light and reference light, a dispersion compensation element 12, a drive unit 13 for moving the dispersion compensation element 12, and light-receiving means 14 for measuring an interference waveform produced as a result of interference between the measurement light and the reference light. A measurement object 15 to be measured is an Si substrate having a thickness of 800 μm. The dispersion compensation element 12 is an Si substrate having a thickness of 780 μm. Namely, the dispersion compensation element 12 is formed of the same material as that of the measurement object 15 and is 20 μm thinner than the measurement object 15. The interference caused by reflection on the back surface of the measurement object 15 and reflection on the back surface of the dispersion compensation element 12 has a narrow peak width because wavelength dispersion is cancelled almost completely. Thus, the accuracy in measuring the peak position improves. As a result, the accuracy in measuring temperature, etc., improves.
摘要翻译： [待解决的问题]提高利用干扰的干涉测量装置的测量精度。解决方案干扰测量装置包括用于发射超连续光（SC灯）的光源10，用于将SC光分解为测量光和参考光的光纤耦合器11，色散补偿元件12，驱动单元13 用于移动色散补偿元件12和用于测量作为测量光和参考光之间的干涉的结果而产生的干涉波形的光接收装置14。待测量的测量对象15是厚度为800μm的Si衬底。色散补偿元件12是厚度为780μm的Si衬底。也就是说，色散补偿元件12由与测量对象15相同的材料形成，并且比测量对象15薄20μm。由测量对象15的背面上的反射引起的干涉和背面的反射由于波长色散几乎完全消除，所以色散补偿元件12的表面具有窄的峰宽。因此，测量峰值位置的精度提高。结果，测量温度等的精度提高。

40. 发明授权

US08961888B2 Plasma generator 有权
标题翻译：等离子发生器
公开(公告)号：US08961888B2
公开(公告)日：2015-02-24
申请号：US12733896
申请日：2008-09-18
申请人： Masaru Hori , Hioryuki Kano
发明人： Masaru Hori , Hioryuki Kano
IPC分类号： B01J19/08 , H05H1/24 , H01J37/32
CPC分类号： H05H1/24 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H05H1/48
摘要： To provide a plasma generator having plasma-generating zone of increased volume.A plasma generator 110 has a cylindrical casing 11 made of a sintered ceramic produced from alumina (Al2O3) as a raw material. The casing 11 has a slit-like gas inlet 11i and a plurality of cylindrical gas outlets 11o. From the gas inlet 11i to the top of the plasma-generating zone P, the slit width (the front-to-back direction with respect to the sheet of FIG. 2.A, and the left-to right direction in FIG. 2.B) is adjusted to 1 mm, and gas outlets 11o each having an inner diameter of 1 to 2 mm are formed in straight line along the longitudinal direction of the plasma-generating zone P. The plasma-generating zone P has a square cross-section normal to the longitudinal direction having a side of 2 to 5 mm. Each of the surfaces of the electrodes 2a, 2b facing each other has a plurality of recesses (hollow portions). An elevated voltage of about 9 kV obtained from a commercial AC voltage (60 Hz, 100 V) was applied to the electrodes 2a, 2b, to thereby supply a current of 20 mA. When argon gas was supplied through the gas inlet 11i, even in the case where the electrodes 2a, 2b were separated at a spacing of 4 cm, stable linear electric discharge was observed.
摘要翻译：提供具有增加体积的等离子体产生区域的等离子体发生器。等离子体发生器110具有由作为原料的氧化铝（Al 2 O 3）制成的烧结陶瓷制成的圆筒状壳体11。壳体11具有狭缝状气体入口11i和多个圆筒形气体出口11o。从气体入口11i到等离子体产生区域P的顶部，狭缝宽度（相对于图2A的片材的前后方向以及图2中的左右方向） B）被调整为1mm，并且具有内径为1至2mm的气体出口11o沿着等离子体产生区P的纵向方向形成为直线。等离子体产生区P具有正交十字与纵向方向垂直的截面为2至5mm的一侧。彼此面对的电极2a，2b的每个表面具有多个凹部（中空部）。将从市售AC电压（60Hz，100V）获得的约9kV的高电压施加到电极2a，2b，从而提供20mA的电流。当通过气体入口11i供应氩气时，即使在电极2a，2b以4cm的间隔分离的情况下，也观察到稳定的线性放电。

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