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31. 发明授权

US07682772B2 Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂
公开(公告)号：US07682772B2
公开(公告)日：2010-03-23
申请号：US12265607
申请日：2008-11-05
申请人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Hideo Hada , Hiroaki Shimizu , Tsuyoshi Nakamura
发明人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Hideo Hada , Hiroaki Shimizu , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/30 , C07D327/02
CPC分类号： G03F7/0045 , C07D327/02 , C07D327/04 , C07D497/08 , C08K5/36 , C08K5/42 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A compound represented by general formula (I); and a compound represented by general formula (b1-1).[Chemical Formula 1] X-Q1-Y1—SO3−M+ (I) X-Q1-Y1—SO3−A+ (b1-1) wherein Q1 represents a divalent linkage group or a single bond; Y1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, and has an —SO2— bond in the structure thereof; M+ represents an alkali metal ion; and A+ represents an organic cation.
摘要翻译：由通式（I）表示的化合物; 和由通式（b1-1）表示的化合物。 [化学式1]其中Q1表示二价连接基团或单键的X-Q1-Y1-SO3-M +（I）X-Q1-Y1-SO3-A +（b1-1） Y1表示可以具有取代基的亚烷基或可以具有取代基的氟化亚烷基; X表示可以具有取代基的3〜30个碳原子的环状基团，其结构中具有-SO 2 - 键; M +表示碱金属离子; 而A +代表有机阳离子。

32. 发明申请

US20090162784A1 POLYMER COMPOUND, POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD 有权
标题翻译：聚合物化合物，阳离子组成和电阻形成方法
公开(公告)号：US20090162784A1
公开(公告)日：2009-06-25
申请号：US11576518
申请日：2005-09-22
申请人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Shogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08F16/36 , C08F24/00 , G03F7/20
CPC分类号： G03F7/0397 , C08F220/28 , Y10S430/106 , Y10S430/114 , Y10S430/146
摘要： The present invention relates to a polymer compound comprising at least one constituent unit (a0) selected from the group consisting of constituent units represented by the following general formulas (A0-1), (A0-2), (A0-3) and (A0-4) [wherein R represents a hydrogen atom or a lower alkyl group], and a constituent unit (a1) derived from an (a-lower alkyl)acrylate ester having an acid dissociable dissolution inhibiting group.
摘要翻译：本发明涉及包含至少一种选自由以下通式（A0-1），（A0-2），（A0-3）和（A0-3）和（A0-3）表示的结构单元组成的组的组成单元（a0） A0-4）[其中R表示氢原子或低级烷基]，以及由具有酸解离溶解抑制基团的（α-低级烷基）丙烯酸酯衍生的构成单元（a1）。

33. 发明申请

US20090142696A1 POSITIVE RESIST COMPOSITION, POSITIVE RESIST COMPOSITION FOR THERMAL FLOW, AND RESIST PATTERN FORMING METHOD 有权
标题翻译：积极抵抗组合物，热流积极抵抗组合物和抗性图案形成方法
公开(公告)号：US20090142696A1
公开(公告)日：2009-06-04
申请号：US12089681
申请日：2006-10-17
申请人： Sanae Furuya , Hideo Hada , Yusuke Nakagawa , Akiyoshi Yamazaki
发明人： Sanae Furuya , Hideo Hada , Yusuke Nakagawa , Akiyoshi Yamazaki
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0007 , G03F7/0046 , Y10S430/111
摘要： Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).
摘要翻译：公开了包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，其中组分（A）含有包含由下式（a0）表示的结构单元（a0）的高分子化合物（A1）和衍生自含有内酯的环状基团的丙烯酸酯的结构单元（a2）（其中，R表示氢原子，卤素原子，低级烷基或卤代低级烷基; Y1表示脂肪族环状基团 Z表示含有叔烷基的酸解离抑制基团，a表示1〜3的整数，b表示0〜2的整数，a + b = 1〜3，c，d，e各自独立地表示独立地表示0〜3的整数）。

34. 发明申请

US20090134119A1 FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN 有权
标题翻译：成膜材料和形成图案的方法
公开(公告)号：US20090134119A1
公开(公告)日：2009-05-28
申请号：US11997300
申请日：2006-08-24
申请人： Shogo Matsumaru , Hideo Hada , Fujikawa Shigenori , Toyoki Kunitake
发明人： Shogo Matsumaru , Hideo Hada , Fujikawa Shigenori , Toyoki Kunitake
IPC分类号： C23F1/02
CPC分类号： H01L21/0273 , C09D183/04 , G03F7/0755 , G03F7/40 , H01L21/31138 , H01L21/31144
摘要： A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.
摘要翻译：能够在低温下形成相对于有机膜具有高耐蚀刻性和高蚀刻选择比的膜的成膜材料以及形成使用该膜的图案的方法形成材料。成膜材料包括水解时能够产生羟基的金属化合物（W）和其中溶解有金属化合物的溶剂（S），其中溶剂（S）包括沸腾的溶剂（S1）至少155℃，不含与金属化合物（W）反应的官能团。形成图案的方法包括以下步骤：使用上述成膜材料涂覆已经形成在包括基材和有机膜的层压体的有机膜的顶部上的图案，然后进行蚀刻使用该图案作为掩模的有机膜。

35. 发明申请

US20090061170A1 ANISOTROPIC FILM AND METHOD OF MANUFACTURING ANISOTROPIC FILM 审中-公开
标题翻译： ANISOTROPIC膜和制造ANISOTROPIC膜的方法
公开(公告)号：US20090061170A1
公开(公告)日：2009-03-05
申请号：US12199569
申请日：2008-08-27
申请人： Shigenori Fujikawa , Wakana Kubo , Toyoki Kunitake , Hideo Hada , Sanae Furuya
发明人： Shigenori Fujikawa , Wakana Kubo , Toyoki Kunitake , Hideo Hada , Sanae Furuya
IPC分类号： B32B3/10 , B05D5/00 , B05D3/00 , B05D3/10 , H05H1/24
CPC分类号： H05K3/4038 , H01L23/4985 , H01L2924/0002 , H01R43/007 , H05K2201/10378 , H05K2203/0338 , Y10T428/24802 , H01L2924/00
摘要： An anisotropic film is disclosed in which a line-shaped nanostructure is disposed inside a resin film. Also disclosed is a method of producing an anisotropic film that includes: forming a metal nanostructure on a substrate, forming a resin film that embeds the metal nanostructure, and detaching the resin film from the substrate, wherein the step of forming the metal nanostructure on the substrate includes: at least, forming a coating film on the surface of a template provided on the substrate, the coating film including a metal layer formed by electroless plating; and removing a portion or all of the template while retaining a portion or all of the coating film, or removing a portion of the coating film. Also disclosed is an anisotropic film produced using the method of producing an anisotropic film.
摘要翻译：公开了在树脂膜内设置线状纳米结构的各向异性膜。还公开了一种制造各向异性膜的方法，其包括：在基板上形成金属纳米结构体，形成嵌入金属纳米结构体的树脂膜，以及从基板剥离树脂膜，其中，将形成金属纳米结构的工序基板包括：至少在设置在基板上的模板的表面上形成涂膜，所述涂膜包括通过无电镀形成的金属层; 并且在保留一部分或全部涂膜的同时除去部分或全部模板，或者去除涂膜的一部分。还公开了使用各向异性膜的制造方法制造的各向异性膜。

36. 发明授权

US07316888B2 Positive type resist composition and resist pattern formation method using same 有权
标题翻译：正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法
公开(公告)号：US07316888B2
公开(公告)日：2008-01-08
申请号：US11347102
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.
摘要翻译：提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团（B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元酯和衍生自丙烯酸酯的结构单元。根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

37. 发明申请

US20070259273A1 Positive Resist Composition and Method of Forming Resist Pattern 有权
标题翻译：正电阻组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070259273A1
公开(公告)日：2007-11-08
申请号：US11572630
申请日：2005-07-25
申请人： Daiju Shiono , Taku Hirayama , Hideo Hada
发明人： Daiju Shiono , Taku Hirayama , Hideo Hada
IPC分类号： G03F1/00
CPC分类号： G03F7/0045 , G03F7/0392
摘要： A positive resist composition including a base material for a pattern-forming material (A), which contains a protector (X1) of a polyhydric phenol compound (x) having two or more phenolic hydroxyl groups and a molecular weight of 300 to 2,500, in which a portion of the phenolic hydroxyl groups are protected with an acid-dissociable, dissolution-inhibiting group, and an acid generator component (B) that generates an acid upon exposure, wherein the component (B) contains an onium salt-based acid generator (B1) with an alkylsulfonate ion as an anion.
摘要翻译：含有图案形成材料（A）的基材的正型抗蚀剂组合物，其含有具有两个或多个酚羟基并且分子量为300〜2,500的多元酚化合物（x）的保护剂（X1）其中一部分酚羟基被酸解离的溶解抑制基团和在暴露时产生酸的酸产生剂组分（B）保护，其中组分（B）含有鎓盐酸产生剂（B1）与烷基磺酸根离子作为阴离子。

38. 发明申请

US20070224538A1 Positive Resist Compositions and Process for the Formation of Resist Patterns With the Same 有权
标题翻译：积极的抗蚀剂组合物和形成抗蚀剂图案的方法同样
公开(公告)号：US20070224538A1
公开(公告)日：2007-09-27
申请号：US11597696
申请日：2005-05-24
申请人： Hideo Hada , Masaru Takeshita , Satoshi Yamada
发明人： Hideo Hada , Masaru Takeshita , Satoshi Yamada
IPC分类号： G03F7/039 , C08F220/18
CPC分类号： G03F7/0397
摘要： A positive resist composition that includes a resin component (A) and an acid-generator component (B), wherein the component (A) is a copolymer that includes a structural unit (a1) derived from a mono(α-lower alkyl)acrylate that contains an acid-dissociable, dissolution-inhibiting group, a structural unit (b1) derived from a mono(α-lower alkyl)acrylate that contains a lactone ring, and a structural unit (c1) derived from a poly(α-lower alkyl)acrylate. A positive resist composition that includes a resin component (A) and an acid generator component (B), wherein the component (A) is a star polymer that includes a core that contains acid-dissociable, dissolution-inhibiting groups, and arms that are bonded to the core.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，其中组分（A）是包含衍生自单（α-低级烷基）丙烯酸酯的结构单元（a1）的共聚物其包含酸解离的溶解抑制基团，衍生自含有内酯环的单（α-低级烷基）丙烯酸酯的结构单元（b1）和衍生自聚（α-低级）的结构单元（c1）烷基）丙烯酸酯。包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，其中组分（A）是包含含有酸解离的，溶解抑制基团的核心的星形聚合物，和绑定到核心。

39. 发明申请

US20060147832A1 Polymer and positive type resist composition 审中-公开
标题翻译：聚合物和正型抗蚀剂组合物
公开(公告)号：US20060147832A1
公开(公告)日：2006-07-06
申请号：US10547632
申请日：2004-02-26
申请人： Hideo Hada , Miwa Miyairi , Takeshi Iwai
发明人： Hideo Hada , Miwa Miyairi , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0397
摘要： There is provided technology that enables the suppression of the surface roughness that occurs within a resist pattern, either following etching or following developing, or preferably following both processes. According to this technology, a resist pattern is formed using a positive resist composition including a resin component (A), which contains a structural unit (a1) containing a lactone, as represented by a general formula shown below, and exhibits increased alkali solubility under the action of acid, (wherein, R represents a hydrogen atom or a methyl group), an acid generator component (B) that generates acid on exposure, and an organic solvent (C).
摘要翻译：提供了能够抑制在抗蚀剂图案中发生的表面粗糙度的技术，无论是在蚀刻之后还是在显影之后，或优选地在两个过程之后。根据该技术，使用包含树脂组分（A）的正型抗蚀剂组合物形成抗蚀剂图案，该抗蚀剂图案含有如下所示的通式所示的含有内酯的结构单元（a1），并且表现出增加的碱溶解度酸的作用（其中，R表示氢原子或甲基），曝光时产生酸的酸产生剂成分（B）和有机溶剂（C）。

40. 发明申请

US20060141382A1 Resist composition and method of forming resist pattern using same 审中-公开
标题翻译：抗蚀剂组合物和使用其形成抗蚀剂图案的方法
公开(公告)号：US20060141382A1
公开(公告)日：2006-06-29
申请号：US10531883
申请日：2003-12-18
申请人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Miwa Miyairi , Hideo Hada , Takeshi Iwai
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： There are provided a resist composition that produces a resist pattern of good shape, and a method of forming a resist pattern that uses such a resist composition. The resist composition comprises a resin component (A) that undergoes a change in alkali solubility under the action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C), wherein the component (B) comprises a compound represented by a general formula (I) shown below [wherein, R1 to R3 each represent, independently, a methyl group or an ethyl group; and X− represents an anion].
摘要翻译：提供了产生良好形状的抗蚀剂图案的抗蚀剂组合物，以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。抗蚀剂组合物包含在酸作用下碱溶性变化的树脂组分（A），暴露时产生酸的酸产生剂组分（B）和有机溶剂（C），其中组分（B）包含由以下所示的通式（I）表示的化合物[其中，R 1至R 3各自独立地表示甲基或乙基; 和X - 代表阴离子]。

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