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31. 发明申请

US20080118424A1 Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method 有权
标题翻译：通过该方法制造硅晶片和硅晶片的方法
公开(公告)号：US20080118424A1
公开(公告)日：2008-05-22
申请号：US11631451
申请日：2005-06-21
申请人： Shinsuke Sadamitsu , Wataru Sugimura , Masanori Akatsuka , Masataka Hourai
发明人： Shinsuke Sadamitsu , Wataru Sugimura , Masanori Akatsuka , Masataka Hourai
IPC分类号： H01L21/66 , C01B33/00
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02 , H01L21/3226
摘要： There is obtained a silicon wafer which has a large diameter, where no slip generated therein in a wide range of a density of oxygen precipitates even though a heat treatment such as SLA or FLA is applied thereto, and which has high strength.First, by inputting as input parameters combinations of a plurality of types of oxygen concentrations and thermal histories set for manufacture of a silicon wafer a Fokker-Planck equation is solved to calculate each of a diagonal length L and a density D of oxygen precipitates in the wafer after a heat treatment step to form the oxygen precipitates (11) and immediately before a heat treatment step of a device manufacturing process is calculated. Then, a maximum heat stress S acting in a tangent line direction of an outer peripheral portion of the wafer in the heat treatment step of the device manufacturing process is calculated based on a heat treatment furnace structure and a heat treatment temperature used in the heat treatment step of the device manufacturing process, and then an oxygen concentration or the like satisfying the following Expression (1) is determined: 12000×D−0.26≦L≦51000×S−1.55 (1)
摘要翻译：获得了具有大直径的硅晶片，即使在其中施加了诸如SLA或FLA的热处理并且具有高强度的情况下，在宽的氧浓度范围内产生的滑移也会沉淀。首先，通过输入多个类型的氧浓度的组合和用于制造硅晶片的热历史的组合的输入参数，解决了福克 - 普朗克方程式，以计算出所述氧沉淀物的对角线长度L和密度D 在热处理步骤之后形成氧沉淀物（11）并且在计算装置制造过程的热处理步骤之前。然后，基于热处理炉结构和热处理中使用的热处理温度，计算在器件制造工序的热处理工序中在晶片的外周部的切线方向上的最大热应力S 确定装置制造过程的步骤，然后确定满足以下表达式（1）的氧浓度等：<？in-line-formula description =“In-line formula”end =“lead”？> 12000xD ^{-0.26 <= L <= 51000×S -1.55 （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>}

32. 发明申请

US20060249074A1 Method for supplying hydrogen gas in silicon single-crystal growth, and method for manufacturing silicon single-crystal 审中-公开
标题翻译：在硅单晶生长中供应氢气的方法，以及制造单晶硅的方法
公开(公告)号：US20060249074A1
公开(公告)日：2006-11-09
申请号：US11122233
申请日：2005-05-05
申请人： Wataru Sugimura , Masataka Hourai
发明人： Wataru Sugimura , Masataka Hourai
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/06 , C30B15/00
摘要： This method for supplying hydrogen gas in silicon single-crystal growth is characterized by including feeding hydrogen gas at a hydrogen gas concentration of less than X1 into a single-crystal pulling furnace during growth of a silicon single-crystal by the CZ process in a hydrogen-containing inert atmosphere, wherein the hydrogen gas concentration X1 is defined as, in a triangular diagram of a ternary system of hydrogen gas, oxygen gas and inert gas having vertices A, B and C where K1 is a mixed gas dilution limit for detonation and D is a composition of air on a side BC representing a volumetric ratio of the oxygen gas and the inert gas, hydrogen gas concentration at a point S1 where a straight line from D toward K1 intersects a side CA representing a volumetric ratio of the inert gas and the hydrogen gas.
摘要翻译：在硅单晶生长中提供氢气的这种方法的特征在于包括在硅单晶生长过程中将单体拉制炉内的氢气浓度小于1％的氢气进料到单晶拉制炉中，在氢气惰性气氛中通过CZ工艺制备晶体，其中氢气浓度X 1被定义为在三元体系的氢气，氧气和具有顶点的惰性气体的三角图中 A，B和C，其中K 1是用于爆炸的混合气体稀释极限，D是表示氧气和惰性气体体积比的侧面BC上的空气组成，氢气浓度在从D到K 1 <1的直线与表示惰性气体和氢气的体积比的侧面CA相交的点S 1 <1处。

33. 发明申请

US20110052923A1 METHOD OF PRODUCING EPITAXIAL WAFER AS WELL AS EPITAXIAL WAFER 审中-公开
标题翻译：生产外延波浪的方法作为外延波形
公开(公告)号：US20110052923A1
公开(公告)日：2011-03-03
申请号：US12862126
申请日：2010-08-24
申请人： Shigeru Umeno , Toshiaki Ono , Wataru Sugimura
发明人： Shigeru Umeno , Toshiaki Ono , Wataru Sugimura
IPC分类号： H01B1/04 , C30B15/00 , B32B9/00
CPC分类号： C30B15/00 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/3225
摘要： An epitaxial wafer is produced by a method comprising steps of growing a silicon single crystal ingot having a given oxygen concentration through Czochralski method, cutting out a wafer from the silicon single crystal ingot, subjecting the wafer to a heat treatment at a given temperature for a given time, and epitaxially growing the wafer.
摘要翻译：通过包括以下步骤的方法制造外延晶片，该方法包括以下步骤：通过Czochralski法生长具有给定氧浓度的硅单晶锭，从硅单晶锭切出晶片，使晶片在给定温度下进行热处理，给定时间，并外延生长晶片。

34. 发明授权

US07790573B2 Process for producing SOI substrate and process for regeneration of layer transferred wafer in the production 有权
标题翻译：制造SOI衬底的工艺和生产中转移晶片的再生工艺
公开(公告)号：US07790573B2
公开(公告)日：2010-09-07
申请号：US11277857
申请日：2006-03-29
申请人： Akihiko Endo , Toshiaki Ono , Wataru Sugimura
发明人： Akihiko Endo , Toshiaki Ono , Wataru Sugimura
IPC分类号： H01L21/22
CPC分类号： C30B33/00 , C30B29/06 , H01L21/02032 , H01L21/76254
摘要： A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first silicon substrate, laminating a second silicon substrate onto the first silicon substrate via the oxide film and thereby forming a laminated body of the first silicon substrate and the second silicon substrate bonded with each other, and heating the laminated body at a predetermined temperature and thereby separating the first silicon substrate at the ion implantation area and thereby obtaining an SOI substrate wherein a thin film SOI layer is formed on the second silicon substrate via the oxide film. The first silicon substrate is formed by slicing an ingot free of an agglomerate of vacancy type point defects and an agglomerate of interstitial silicon type point defects grown by a CZ method in an inorganic atmosphere including hydrogen. The layer transferred wafer separated from the SOI layer is used again as the first silicon substrate.
摘要翻译：制造SOI衬底的方法包括以下步骤：至少在第一硅衬底的前表面上形成氧化膜，从第一硅衬底的表面注入氢离子，从而在第一硅衬底的内部形成离子注入区第一硅衬底，通过氧化膜将第二硅衬底层压到第一硅衬底上，从而形成彼此接合的第一硅衬底和第二硅衬底的层压体，并在预定温度下加热层压体在离子注入区域分离第一硅衬底，从而获得SOI衬底，其中通过氧化物膜在第二硅衬底上形成薄膜SOI层。第一硅衬底是通过在包括氢的无机气氛中通过切割没有空位型点缺陷的团块的锭和通过CZ方法生长的间隙硅型点缺陷的团块来形成的。从SOI层分离的转移晶片的层被再次用作第一硅衬底。

35. 发明授权

US07628854B2 Process for producing silicon single crystal 有权
标题翻译：硅单晶生产工艺
公开(公告)号：US07628854B2
公开(公告)日：2009-12-08
申请号：US11486508
申请日：2006-07-14
申请人： Toshiaki Ono , Wataru Sugimura , Takayuki Kubo , Akira Higuchi , Ken Nakajima
发明人： Toshiaki Ono , Wataru Sugimura , Takayuki Kubo , Akira Higuchi , Ken Nakajima
IPC分类号： C30B15/20
CPC分类号： C30B15/04 , C30B29/06
摘要： A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.
摘要翻译：制造硅单晶的方法包括使晶种与硅熔体接触的步骤，从熔体中逐渐拉晶晶，以形成具有锥形部分和恒定直径部分的颈部，然后拉动硅单晶。在颈部形成期间使用的气氛是通过向惰性气体中加入含氢物质制备的含氢气氛。含氢物质在含氢气氛中的氢气当量浓度为3〜20％。

36. 发明申请

US20070017434A1 Process for producing silicon single crystal 有权
标题翻译：硅单晶生产工艺
公开(公告)号：US20070017434A1
公开(公告)日：2007-01-25
申请号：US11486508
申请日：2006-07-14
申请人： Toshiaki Ono , Wataru Sugimura , Takayuki Kubo , Akira Higuchi , Ken Nakajima
发明人： Toshiaki Ono , Wataru Sugimura , Takayuki Kubo , Akira Higuchi , Ken Nakajima
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/04 , C30B29/06
摘要： A process for producing a silicon single crystal includes the steps of bringing a seed crystal into contact with a silicon melt, gradually pulling the seed crystal from the melt so as to form a neck having a tapered portion and a constant diameter portion, then pulling a silicon single crystal. The atmosphere used during neck formation is a hydrogen-containing atmosphere prepared by adding a hydrogen-containing substance to an inert gas. The hydrogen-containing substance has a hydrogen gas equivalent concentration in the hydrogen-containing atmosphere of 3 to 20%.
摘要翻译：制造硅单晶的方法包括使晶种与硅熔体接触的步骤，从熔体中逐渐拉晶晶，以形成具有锥形部分和恒定直径部分的颈部，然后拉动硅单晶。在颈部形成期间使用的气氛是通过向惰性气体中加入含氢物质制备的含氢气氛。含氢物质在含氢气氛中的氢气当量浓度为3〜20％。

37. 发明申请

US20060228846A1 Process for Producing SOI Substrate and Process for Regeneration of Layer Transferred Wafer in the Production 有权
标题翻译：生产SOI基板和层转移晶片再生工艺
公开(公告)号：US20060228846A1
公开(公告)日：2006-10-12
申请号：US11277857
申请日：2006-03-29
申请人： Akihiko Endo , Toshiaki Ono , Wataru Sugimura
发明人： Akihiko Endo , Toshiaki Ono , Wataru Sugimura
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： C30B33/00 , C30B29/06 , H01L21/02032 , H01L21/76254
摘要： A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first silicon substrate, laminating a second silicon substrate onto the first silicon substrate via the oxide film and thereby forming a laminated body of the first silicon substrate and the second silicon substrate bonded with each other, and heating the laminated body at a predetermined temperature and thereby separating the first silicon substrate at the ion implantation area and thereby obtaining an SOI substrate wherein a thin film SOI layer is formed on the second silicon substrate via the oxide film. The first silicon substrate is formed by slicing an ingot free of an agglomerate of vacancy type point defects and an agglomerate of interstitial silicon type point defects grown by a CZ method in an inorganic atmosphere including hydrogen. The layer transferred wafer separated from the SOI layer is used again as the first silicon substrate.
摘要翻译：制造SOI衬底的方法包括以下步骤：至少在第一硅衬底的前表面上形成氧化膜，从第一硅衬底的表面注入氢离子，从而在第一硅衬底的内部形成离子注入区第一硅衬底，通过氧化膜将第二硅衬底层压到第一硅衬底上，从而形成彼此接合的第一硅衬底和第二硅衬底的层压体，并在预定温度下加热层压体在离子注入区域分离第一硅衬底，从而获得SOI衬底，其中通过氧化物膜在第二硅衬底上形成薄膜SOI层。第一硅衬底是通过在包括氢的无机气氛中通过切割没有空位型点缺陷的团块的锭和通过CZ方法生长的间隙硅型点缺陷的团块来形成的。从SOI层分离的转移晶片的层被再次用作第一硅衬底。

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