专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07459246B2 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same 失效
标题翻译：半导体装置的制造方法，模板掩模及其制造方法
公开(公告)号：US07459246B2
公开(公告)日：2008-12-02
申请号：US11648564
申请日：2007-01-03
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： G03F9/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

32. 发明申请

US20070271374A1 Statistical information collecting system and apparatus thereof 失效
标题翻译：统计信息收集系统及其装置
公开(公告)号：US20070271374A1
公开(公告)日：2007-11-22
申请号：US11700155
申请日：2007-01-31
申请人： Yusuke Shomura , Yoshinori Watanabe , Takeshi Shibata
发明人： Yusuke Shomura , Yoshinori Watanabe , Takeshi Shibata
IPC分类号： G06F15/173
CPC分类号： H04L43/026 , H04L43/022 , H04L43/024 , H04L43/16
摘要： A statistical information collecting system and device for finding the detailed state of traffic flowing in a network to effectively reduce the traffic flow by sending statistical information from a statistical information collection apparatus to a collector device. A statistical information collection system with a statistical information collection apparatus comprising a collector device, in which the statistical information collection apparatus receives packets and collects statistical information from the received packets, and sends the collected statistical information to a collector device; the statistical information collection apparatus contains flow information including flow identification conditions for identifying flows that the received packets belong to, and sorts the statistical information on the collected packets for each flow identified by the flow identification conditions while referring to statistical information sorted for each flow, and the statistical information collection apparatus decides the transmit intervals for each flow for sending the statistical information to the collector device.
摘要翻译：一种统计信息收集系统和装置，用于通过从统计信息收集装置向收集装置发送统计信息来查找网络流量的详细状态，从而有效地减少流量。一种具有统计信息收集装置的统计信息收集装置，包括收集装置，其中所述统计信息收集装置从所接收的分组接收分组并收集统计信息，并将所收集的统计信息发送到收集装置; 统计信息收集装置包含流量信息，其中包括用于识别接收到的分组属于的流的流识别条件，并且针对针对每个流排序的统计信息，针对由流识别条件标识的每个流分别收集分组的统计信息，并且统计信息收集装置确定用于将统计信息发送到收集器装置的每个流的发送间隔。

33. 发明授权

US07282725B2 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask 失效
标题翻译：制造半导体器件，半导体制造装置和模板掩模的方法
公开(公告)号：US07282725B2
公开(公告)日：2007-10-16
申请号：US11284035
申请日：2005-11-22
申请人： Takeshi Shibata , Hisanori Misawa
发明人： Takeshi Shibata , Hisanori Misawa
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.
摘要翻译：公开了一种半导体器件的制造装置，其包括：注入源，其以从半导体衬底的垂直方向偏移角度θ的θ方向将粒子或电磁波施加到半导体衬底的注入区域;第一设置在半导体衬底和注入源之间的模板掩模，第一模版掩模具有在θ方向上与注入区对应的第一开口，以及设置在第一模板掩模和注入源之间的第二模板掩模，第二模板掩模具有在θ方向上对应于植入区域的第二开口。

34. 发明申请

US20070045264A1 GLASS PLATE WITH PRINTED CONDUCTIVE MEMBERS AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：具有印刷导电性成员的玻璃板及其制造方法
公开(公告)号：US20070045264A1
公开(公告)日：2007-03-01
申请号：US11553707
申请日：2006-10-27
申请人： Takashi Nekoda , Teruji Nagaoka , Takeshi Shibata
发明人： Takashi Nekoda , Teruji Nagaoka , Takeshi Shibata
IPC分类号： B60L1/02
CPC分类号： C03B23/0256 , C03C17/36 , C03C17/3607 , C03C17/3655 , C03C17/3673 , C03C17/3681 , C03C2218/34 , H01Q1/1271 , H05B3/84 , H05B2203/002 , H05B2203/016
摘要： A glass plate having printed conductive members, comprises a functional strip (30) being a printed conductive member, a first bus bar (20a) electrically connected to an end of the functional strip and being a printed conductive member, a second bus bar (20b) electrically connected to the other end of the functional strip and being a printed conductive member and a printed dark ceramics (13) provided along the periphery of a glass plate (10), wherein the bus bars (20a, 20b) are provided on the printed dark ceramics and have cut-out portions (23a, 24a) in which the printed dark ceramics is exposed. Generation of uneven temperature distribution due to the difference of heat absorptivities between the printed dark ceramics and the bus bars is prevented, whereby a glass plate having printed conductive members is provided by more simple method and at lower cost than before.
摘要翻译：具有印刷导电构件的玻璃板包括作为印刷导电构件的功能条（30），电连接到功能条的端部并且是印刷导电部件的第一母线（20a），第二母线 20b）电连接到所述功能条的另一端并且是沿着玻璃板（10）的周边设置的印刷导电构件和印刷的深色陶瓷（13），其中所述汇流条（20b，20b）设置在印刷的深色陶瓷上，并且具有印刷的深色陶瓷露出的切口部分（23a，24a）。由于印刷的深色陶瓷和母线之间的热吸收率的差异导致不均匀的温度分布的产生，由此通过更简单的方法并以比以前更低的成本提供具有印刷导电部件的玻璃板。

35. 发明授权

US07179569B2 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same 失效
公开(公告)号：US07179569B2
公开(公告)日：2007-02-20
申请号：US10886656
申请日：2004-07-09
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： G03F9/00
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

36. 发明授权

US07119347B2 Ion implantation apparatus and method 失效
标题翻译：离子注入装置及方法
公开(公告)号：US07119347B2
公开(公告)日：2006-10-10
申请号：US11088881
申请日：2005-03-25
申请人： Takeshi Shibata
发明人： Takeshi Shibata
IPC分类号： G21K5/10 , G01R31/28
CPC分类号： H01J37/304 , H01J37/3171
摘要： An ion implantation apparatus includes a laser beam irradiation unit which irradiates the surface of a target substrate with laser beam. The angle of an optical axis of the laser beam relative to the surface is adjustable. A reference line defining unit is adapted to define a virtual reference line which coincides with the optical axis of the laser beam when the angle takes a certain value. An ion irradiation unit provides an ion beam on a trajectory which coincides with the reference line.
摘要翻译：离子注入装置包括用激光束照射目标基板的表面的激光束照射单元。激光束相对于表面的光轴的角度是可调节的。参考线限定单元适于在角度取特定值时限定与激光束的光轴重合的虚拟参考线。离子照射单元在与参考线重合的轨迹上提供离子束。

37. 发明授权

US07034318B2 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask 失效
公开(公告)号：US07034318B2
公开(公告)日：2006-04-25
申请号：US10738038
申请日：2003-12-18
申请人： Takeshi Shibata , Hisanori Misawa
发明人： Takeshi Shibata , Hisanori Misawa
IPC分类号： G01K1/08
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.

38. 发明申请

US20060071183A1 Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask 失效
标题翻译：制造半导体器件，半导体制造装置和模板掩模的方法
公开(公告)号：US20060071183A1
公开(公告)日：2006-04-06
申请号：US11284035
申请日：2005-11-22
申请人： Takeshi Shibata , Hisanori Misawa
发明人： Takeshi Shibata , Hisanori Misawa
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.
摘要翻译：公开了一种半导体器件的制造装置，其包括：注入源，其以从半导体衬底的垂直方向偏移角度θ的θ方向将粒子或电磁波施加到半导体衬底的注入区域;第一设置在半导体衬底和注入源之间的模板掩模，第一模版掩模具有在θ方向上与注入区对应的第一开口，以及设置在第一模板掩模和注入源之间的第二模板掩模，第二模板掩模具有在θ方向上对应于植入区域的第二开口。

39. 发明授权

US06770402B2 Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same 失效
标题翻译：半导体装置的制造方法，模板掩模及其制造方法
公开(公告)号：US06770402B2
公开(公告)日：2004-08-03
申请号：US09984475
申请日：2001-10-30
申请人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
发明人： Kyoichi Suguro , Takeshi Shibata , Kazuyoshi Sugihara , Kouji Matsuo
IPC分类号： G03F900
CPC分类号： B82Y10/00 , C23C14/042 , C23C14/48 , G03F1/20 , H01J2237/0453 , H01J2237/31788 , H01L21/266 , Y10T428/24273
摘要： Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.
摘要翻译：制备包括硅薄膜的模板掩模，其中用于选择性地将带电粒子照射到半导体基板的开口，并且其上照射有带电粒子的照射面被注入杂质，并且将带电粒子选择性地照射到半导体衬底使用相对设置在半导体衬底上的模板掩模。

40. 发明授权

US06767807B2 Method for producing organic thin film device and transfer material used therein 有权
标题翻译：用于制造有机薄膜器件和转移材料的方法
公开(公告)号：US06767807B2
公开(公告)日：2004-07-27
申请号：US10084933
申请日：2002-03-01
申请人： Takeshi Shibata , Yasushi Araki
发明人： Takeshi Shibata , Yasushi Araki
IPC分类号： H01L2131
CPC分类号： H01L27/32 , H01L27/3211 , H01L51/0013 , H01L51/0037 , H01L51/0042 , H01L51/0062 , H01L51/0085 , H01L51/56 , H01L2251/308 , H01L2251/558
摘要： A transfer material comprising an organic thin film uniformly provided by a wet method, etc. with high productivity is used to efficiently produce an organic thin film device such as an organic EL device excellent in light-emitting efficiency, uniformity of light emission and durability. A method for producing the organic thin film device according to the present invention comprises the steps of: making an organic thin film 112 of a transfer material 110 face a transparent electrically conductive layer 102 disposed on a support 101, the transfer material 110 having the organic thin film 112 on a temporally substrate 111; decompressing a space 105 between the transfer material 110 and the transparent electrically conductive layer 102 to bring the transfer material 110 in contact to the transparent electrically conductive layer 102; heating at least one organic thin film 112; and peeling the temporary substrate 111 from the organic thin film 112 to transfer the organic thin film 112 to the transparent electrically conductive layer 102.
摘要翻译：使用包含通过湿法均匀地以高生产率提供的有机薄膜的转印材料来有效地制造有机薄膜器件，例如发光效率，发光均匀性和耐久性优异的有机EL器件。根据本发明的制造有机薄膜器件的方法包括以下步骤：使转印材料110的有机薄膜112面对设置在支撑体101上的透明导电层102，转移材料110具有有机物时间衬底111上的薄膜112; 减压转印材料110和透明导电层102之间的空间105，使转印材料110与透明导电层102接触; 加热至少一个有机薄膜112; 并从有机薄膜112剥离临时衬底111，以将有机薄膜112转移到透明导电层102。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式