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    • 33. 发明授权
    • Replacing defective columns of memory cells in response to external addresses
    • 根据外部地址更换存储单元的有缺陷的列
    • US08295109B2
    • 2012-10-23
    • US13017168
    • 2011-01-31
    • Vishal SarinWilliam H. RadkeDzung H. Nguyen
    • Vishal SarinWilliam H. RadkeDzung H. Nguyen
    • G11C29/00
    • G11C29/848
    • Controllers and memory devices are provided. In an embodiment, a controller is configured to address a non-defective column of memory cells of a memory device in place of a defective column of memory cells of the memory device in response to receiving an address of the defective column of memory cells from the memory device. In another embodiment, a memory device has columns of memory cells and is configured to receive an external address that addresses a non-defective column of memory cells of a sequence of columns of memory cells of the memory device in place of a defective column of memory cells of the sequence of columns of memory cells such that the non-defective column replaces the defective column. The non-defective column is a proximate non-defective column following the defective column in the sequence of columns that is available to replace the defective column.
    • 提供控制器和存储器件。 在一个实施例中,控制器被配置为响应于接收来自存储器单元的存储器单元的缺陷列的地址,来代替存储器件的存储器单元的无缺陷列来代替存储器件的存储器单元的缺陷列 存储设备。 在另一个实施例中,存储器设备具有存储单元的列,并且被配置为接收寻址存储器件的存储器单元列序列的无缺陷列的存储器单元的外部地址,而不是缺陷存储器列 存储单元列的序列的单元,使得无缺陷列替代缺陷列。 无缺陷列是可用于替换缺陷列的列序列中的缺陷列之后的邻近无缺陷列。
    • 35. 发明授权
    • Advanced detection of memory device removal, and methods, devices and connectors
    • 高级检测存储器件拆卸,以及方法,设备和连接器
    • US08189420B2
    • 2012-05-29
    • US12478422
    • 2009-06-04
    • James CookePeter FeeleyVictor TsaiWilliam H. RadkeNeal GalboChad Cobbley
    • James CookePeter FeeleyVictor TsaiWilliam H. RadkeNeal GalboChad Cobbley
    • G11C5/14
    • G06F13/4068
    • Memory devices, connectors and methods for terminating an operation are provided, including a memory device configured to terminate an internal operation such as a programming or erase operation responsive to receiving a signal during removal of the memory device from a connector, such as a socket. The memory device may be specially configured to generate the removal signal, such as by including a dedicated removal terminal. The memory card may respond to the signal by terminating a programming or erase operation before power is lost. The removal terminal may have a dimension that is different from a dimension of a power terminal through which the memory device receives power. Alternatively, the connector may be specially configured to generate a signal that causes a host to terminate programming or erase operations in the memory device prior to memory card removal, such as by including a switch that is actuated when the memory device moves to a pre-power loss position.
    • 提供了用于终止操作的存储器件,连接器和方法,包括响应于在从诸如插座的连接器移除存储器设备期间接收信号而终止诸如编程或擦除操作之类的内部操作的存储器件。 存储器件可以被特别地配置为产生去除信号,例如通过包括专用的移除终端。 存储卡可以通过在断电之前终止编程或擦除操作来响应信号。 移除终端可以具有不同于存储设备通过其接收电力的功率端子的尺寸的尺寸。 或者,连接器可以被特别地配置成产生一个信号,使得主机在存储卡移除之前终止在存储器设备中的编程或擦除操作,例如通过包括当存储器件移动到预定位置时被致动的开关, 断电位置
    • 36. 发明申请
    • ERROR RECOVERY STORAGE ALONG A NAND-FLASH STRING
    • NAND闪存盘中的错误恢复存储
    • US20120030545A1
    • 2012-02-02
    • US13267262
    • 2011-10-06
    • William H. Radke
    • William H. Radke
    • H03M13/05G06F11/10
    • G06F11/1008G06F11/1072H03M13/256H03M13/2909
    • Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes.
    • 设备和方法存储存储器阵列的不同维度的错误恢复数据。 例如,在一个维度中,使用块纠错码(ECC),并且在另一维度中,使用补码纠错码,例如卷积码。 通过使用单独的维度,缺陷影响两种错误恢复技术的可能性减弱,从而增加了可以成功执行错误恢复的概率。 在一个示例中,块错误校正码用于沿着行存储的数据,并且该数据被存储在阵列的多级单元中。 补充纠错码用于沿列存储的数据,例如沿着字符串的单元格,并且补充纠错码存储在与纠错码不同的电平上。