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31. 发明授权

US07084080B2 Silicon source reagent compositions, and method of making and using same for microelectronic device structure 失效
公开(公告)号：US07084080B2
公开(公告)日：2006-08-01
申请号：US10112517
申请日：2002-03-29
申请人： Alexander S. Borovik , Ziyun Wang , Chongying Xu , Thomas H. Baum , Brian L. Benac
发明人： Alexander S. Borovik , Ziyun Wang , Chongying Xu , Thomas H. Baum , Brian L. Benac
IPC分类号： H01L21/31 , H01L21/469 , C07F7/04 , C07F7/10 , C07F7/08
CPC分类号： H01L21/28194 , C07F7/003 , C07F7/025 , C07F7/10 , C23C16/401 , C23C16/405 , H01L21/02148 , H01L21/02164 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/28167 , H01L29/517 , H01L29/518
摘要： A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.

32. 发明授权

US06773873B2 pH buffered compositions useful for cleaning residue from semiconductor substrates 失效
标题翻译：用于清洗半导体衬底残留物的pH缓冲组合物
公开(公告)号：US06773873B2
公开(公告)日：2004-08-10
申请号：US10105704
申请日：2002-03-25
申请人： Ma. Fatima Seijo , William A. Wojtczak , David Bernhard , Thomas H. Baum , David Minsek
发明人： Ma. Fatima Seijo , William A. Wojtczak , David Bernhard , Thomas H. Baum , David Minsek
IPC分类号： G03F742
CPC分类号： H01L21/02063 , C11D7/265 , C11D7/28 , C11D11/0047 , G03F7/425 , H01L21/02071
摘要： A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.
摘要翻译：一种用于从用于半导体器件的干法蚀刻工艺中形成的半导体晶片衬底中去除颗粒的半水性清洁配方，所述清洁配方包括缓冲系统，极性有机溶剂和氟化物源。

33. 发明授权

US06740586B1 Vapor delivery system for solid precursors and method of using same 失效
标题翻译：固体前体的蒸气输送系统及其使用方法
公开(公告)号：US06740586B1
公开(公告)日：2004-05-25
申请号：US10288743
申请日：2002-11-06
申请人： Luping Wang , Thomas H. Baum , Chongying Xu
发明人： Luping Wang , Thomas H. Baum , Chongying Xu
IPC分类号： H01L2131
CPC分类号： B01D3/346 , C23C16/4481 , H01L21/28556
摘要： A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.
摘要翻译：蒸发器输送系统，其包括施加到线基底上的可升华的固体前体材料，用于汽化并实现将蒸发的前体连续不间断地输送到下游半导体处理室。涂覆的线基材以预定速度被拉过热源，以快速加热和蒸发可升华的固体前体。

34. 发明授权

US06709610B2 Isotropic dry cleaning process for noble metal integrated circuit structures 失效
标题翻译：贵金属集成电路结构各向同性干洗工艺
公开(公告)号：US06709610B2
公开(公告)日：2004-03-23
申请号：US09768494
申请日：2001-01-24
申请人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter S. Kirlin , Thomas H. Baum
发明人： Peter C. Van Buskirk , Frank DiMeo, Jr. , Peter S. Kirlin , Thomas H. Baum
IPC分类号： C23F130
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
摘要翻译：通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

35. 发明授权

US06639080B2 Pyrazolate copper complexes, and MOCVD of copper using same 失效
公开(公告)号：US06639080B2
公开(公告)日：2003-10-28
申请号：US10061705
申请日：2002-02-01
申请人： Chongying Xu , Thomas H. Baum , Ziyun Wang
发明人： Chongying Xu , Thomas H. Baum , Ziyun Wang
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.

36. 发明授权

US06602549B1 Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures 失效
标题翻译：铟源试剂组合物及其用于沉积含铟膜的底层和铟掺杂浅结微电子结构的离子注入
公开(公告)号：US06602549B1
公开(公告)日：2003-08-05
申请号：US09609516
申请日：2000-07-03
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C23C1618
CPC分类号： H01L21/28556 , C07F5/00 , C23C16/18 , H01L21/26513 , Y10S427/101
摘要： An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.
摘要翻译：铟前体组合物可用于在微电子器件结构中掺入铟，例如通过起泡器或液体输送MOCVD技术作为器件衬底上的含铟膜，或通过离子注入技术掺入器件衬底中的掺杂剂物质。前体组合物包含式R1R2InL的前体，其中R1和R2可以相同或不同并且独立地选自C 6 -C 10芳基，C 6 -C 10氟芳基，C 6 -C 10全氟芳基，C 1 -C 6烷基，C 1 -C 6氟代烷基，或C 1 -C 6全氟烷基; L是β-二酮或羧酸酯。含铟金属膜可以形成在诸如铟 - 铜金属化的衬底上，并且可以使用本发明的前体在集成电路中形成浅结铟离子注入结构。

37. 发明授权

US06511706B1 MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery 失效
标题翻译： SBT的MOCVD使用四氢呋喃类溶剂体系进行前驱体交付
公开(公告)号：US06511706B1
公开(公告)日：2003-01-28
申请号：US09441694
申请日：1999-11-16
申请人： Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers-Christos , Jeffrey F. Roeder , Witold Paw
发明人： Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers-Christos , Jeffrey F. Roeder , Witold Paw
IPC分类号： C23C1640
CPC分类号： G02B6/02 , C07F9/94 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/4483 , C23C16/45561 , H01L39/2441
摘要： A precursor composition useful for liquid delivery MOCVD, including SBT precursors dissolved in a solvent system containing tetrahydrofuran. The associated liquid delivery MOCVD process may be carried out with vaporization of the precursor composition on a porous vaporization element having an average pore diameter in the range of from about 50 to about 200 micrometers, with the resultant precursor vapor being admixed with a carrier gas to achieve high efficiency formation of SBT films.
摘要翻译：用于液体输送MOCVD的前体组合物，包括溶解在含有四氢呋喃的溶剂体系中的SBT前体。相关的液体输送MOCVD方法可以通过前体组合物在平均孔径在约50至约200微米范围内的多孔蒸发元件上蒸发来进行，所得前体蒸气与载气混合，实现SBT膜的高效率形成。

38. 发明授权

US06500489B1 Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides 有权
标题翻译：使用Bi alcoxides制备铁电薄膜的低温CVD工艺
公开(公告)号：US06500489B1
公开(公告)日：2002-12-31
申请号：US09208541
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： C23C1640
CPC分类号： C23C16/409 , C23C16/40 , C23C16/407 , C23C16/4485 , C23C16/56 , H01L21/31691
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译：化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个烷氧基的Bi络合物，并在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。

39. 发明授权

US06444264B2 Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions 有权
标题翻译：使用烷烃和多胺溶剂组合物的液体输送CVD方法
公开(公告)号：US06444264B2
公开(公告)日：2002-09-03
申请号：US09774262
申请日：2001-01-30
申请人： Frank S. Hintermaier , Thomas H. Baum
发明人： Frank S. Hintermaier , Thomas H. Baum
IPC分类号： C23C1606
CPC分类号： C23C16/448 , C23C16/18 , C23C16/40
摘要： A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi2Ta2O9 (SBT) films for memory devices. An SBT film may be formed using precursors such as Sr(thd)2(tetraglyme), Ta(OiPr)4(thd) and Bi(thd)3 which are dissolved in a solvent medium comprising one or more alkanes. Specific alkane solvent compositions may advantageously used for MOCVD of metal organic compound(s) such as &bgr;-diketonate compounds or complexes, compound(s) including alkoxide ligands, and compound(s) including alkyl and/or aryl groups at their outer (molecular) surface, or compound(s) including other ligand coordination species and specific metal constituents.
摘要翻译：用于液体输送化学气相沉积金属有机前体的溶剂组合物，以形成含金属的膜，例如用于存储器件的SrBi2Ta2O9（SBT）膜。可以使用溶解在包含一种或多种烷烃的溶剂介质中的前体如Sr（thd）2（四甘醇二甲醚），Ta（OiPr）4（thd）和Bi（thd）3）形成SBT膜。特定的烷烃溶剂组合物可有利地用于金属有机化合物如β-二酮化合物或络合物的MOCVD，包括烷氧基配体的化合物和在其外部的包括烷基和/或芳基的化合物（分子）表面或包括其它配体配位物质和特定金属成分的化合物。

40. 发明授权

US06346741B1 Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same 有权
标题翻译： FeRAM电容器的化学机械抛光的组成和结构以及使用其制造FeRAM电容器的方法
公开(公告)号：US06346741B1
公开(公告)日：2002-02-12
申请号：US09200499
申请日：1998-11-25
申请人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
发明人： Peter C. Van Buskirk , Michael W. Russell , Steven M. Bilodeau , Thomas H. Baum
IPC分类号： H01L2940
CPC分类号： H01L27/1085 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L27/10852 , H01L27/10861 , H01L28/55 , H01L28/60 , H01L28/75
摘要： An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.
摘要翻译：通过化学机械抛光（CMP）工艺形成的集成电路结构，其包括凹入电介质基底中的导电通路，其中导电路径包括封装在透射增强材料中的导电传输线，并且其中导电通路依次由传输增强材料的第一层，随后是导电传输线; 传输增强材料的第二层，其封装所述导电传输线并与所述透射增强材料的第一层接触，其中所述透射增强材料选自高磁导率材料和高介电常数材料。这种集成电路结构可以包括从由电容器，电感器和电阻器组成的组中选择的器件结构。优选地，透射增强材料包括MgMn铁氧体，MgMnAl铁氧体，钛酸锶钡，钛酸铅锆，氧化钛，氧化钽等

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