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    • 34. 发明授权
    • Trench corner effect bidirectional flash memory cell
    • 沟槽角效应双向闪存单元
    • US07329920B2
    • 2008-02-12
    • US11188570
    • 2005-07-25
    • Michael Smith
    • Michael Smith
    • H01L29/792
    • H01L29/7923H01L29/42336H01L29/7887
    • A non-volatile memory cell structure that is capable of holding two data bits. The structure includes a trench in a substrate with two sides of the trench being lined with a trapping material. The trench is filled with an oxide dielectric material and a control gate is formed over the oxide-filled trench. Source/drain regions are adjacent the trench sides with the trapping material. An energy barrier between the drain and source regions has two local high points that correspond to the trench corners. To read the device, sufficient gate voltage is applied to invert the channel and a sufficient drain voltage is applied to pull down the drain-side barrier. If charges of opposite polarity are trapped in the source-side trench corner, the source barrier will be significantly lowered so that current flows between source and drain under read conditions.
    • 能够保存两个数据位的非易失性存储单元结构。 该结构包括在衬底中的沟槽,沟槽的两侧衬有捕获材料。 沟槽填充有氧化物电介质材料,并且在氧化物填充的沟槽上形成控制栅极。 源极/漏极区域与陷阱材料相邻。 漏极和源极区之间的能量势垒具有对应于沟槽角的两个局部高点。 为了读取器件,施加足够的栅极电压来反转沟道,并且施加足够的漏极电压来下拉漏极侧栅。 如果反向极性的电荷被捕获在源侧沟槽角中,则源势垒将被显着降低,使得在读取条件下电流在源极和漏极之间流动。