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    • 31. 发明授权
    • Infrared gas analyzer and method for operating said analyzer
    • 红外气体分析仪及其操作方法
    • US06635875B1
    • 2003-10-21
    • US09890979
    • 2001-08-06
    • Werner Grosse BleyGünter VossUlrich DöblerThomas Böhm
    • Werner Grosse BleyGünter VossUlrich DöblerThomas Böhm
    • G01N2161
    • G01M3/38G01N21/3504G01N21/61
    • The invention relates to an infrared gas analyser (1), especially for use as a gas detector for leak detection using a sampling probe. Said gas analyser comprises a vessel (test vessel 2), through which a test gas flows, and an infrared light source (4, 5, 42) which produces an infrared light that shines through the test vessel (2). The analyser further encompasses a detector (35) that facilitates measurement of the infrared light absorption in the test gas. The aim of the invention is to provide at low costs an analyser that is apt for every day use. To this end, a reference vessel (3) through which a reference gas flows is provided in addition to the test vessel (2) through which the test gas flows. A reference gas is sucked from the environment of the test gas suction area. The same or an additional light source (4, 5, 42) and the same detector (35) are allocated to said reference vessel. The analyser is provided with means (38, 41) that effect a modulation of the infrared light shining through the vessel (2, 3). Means (36) are provided which produce the measured values and which allow that the background signals obtained by the infrared absorption in the gas of the reference vessel (3) are taken into consideration for the signals obtained by measuring the infrared absorption in the test vessel.
    • 本发明涉及一种红外线气体分析仪(1),特别用于使用采样探头进行泄漏检测的气体检测器。 所述气体分析仪包括测试气体流过的容器(测试容器2)和产生通过测试容器(2)的红外光的红外光源(4,542)。 分析仪还包括有助于测量测试气体中的红外光吸收的检测器(35)。 本发明的目的是以低成本提供易于每天使用的分析仪。 为此,除了测试气体流过的测试容器(2)之外,还提供了参考气体流过的参考容器(3)。 从试验气体吸入区域的环境吸入参考气体。 将相同或附加的光源(4,5,42)和相同的检测器(35)分配给所述参考容器。 所述分析仪具有实现通过所述容器(2,3)照射的红外光的调制的装置(38,41)。 提供了产生测量值并且允许通过测量在测试容器中的红外吸收获得的信号考虑通过参考容器(3)的气体中的红外吸收而获得的背景信号的装置(36) 。
    • 32. 发明授权
    • Memory cell configuration and corresponding production process
    • 内存单元配置及相应的生产流程
    • US06472696B1
    • 2002-10-29
    • US09645763
    • 2000-08-25
    • Ulrich ZimmermannThomas BöhmManfred HainArmin KohlhaseYoichi OtaniAndreas RuschAlexander Trüby
    • Ulrich ZimmermannThomas BöhmManfred HainArmin KohlhaseYoichi OtaniAndreas RuschAlexander Trüby
    • H01L2710
    • H01L27/11273H01L27/112
    • The memory cell configuration has a large number of memory cells provided in a semiconductor substrate and having bit-line trenches which extend in parallel in the longitudinal direction in the main face of the semiconductor substrate, at the bottoms of which in each case a first conductive region is provided, at the peaks of which in each case a second conductive region of the same conduction type as the first conductive region is provided, and in the walls of which in each case an intermediately located channel region is 0 provided; and having word lines which extend in the transverse direction along the main face of the semiconductor substrate, through specific bit-line trenches, to activate transistors provided there. An additional dopant is introduced into the trench walls of the bit-line trenches which are located between the word lines, in order to increase the corresponding transistor turn-on voltage there to suppress leakage currents.
    • 存储单元配置具有设置在半导体衬底中的大量存储单元,并且具有在半导体衬底的主面中在纵向方向上平行延伸的位线沟槽,其底部在每种情况下都具有第一导电 区域被提供,其峰值在每种情况下具有与第一导电区域相同的导电类型的第二导电区域,并且在其每一种情况下壁的中间位置的沟道区域为0; 并且具有通过特定位线沟槽沿着半导体衬底的主面在横向上延伸的字线,以激活在其中设置的晶体管。 另外的掺杂剂被引入位于字线之间的位线沟槽的沟槽壁中,以便在其上增加对应的晶体管导通电压以抑制漏电流。