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    • 32. 发明授权
    • Semiconductor device manufacturing method, data generating apparatus, data generating method and recording medium readable by computer recorded with data generating program
    • 半导体器件制造方法,数据生成装置,数据生成方法以及由数据生成程序记录的计算机可读取的记录介质
    • US08136057B2
    • 2012-03-13
    • US13223782
    • 2011-09-01
    • Hiromi Hoshino
    • Hiromi Hoshino
    • G06F17/50
    • H01J37/3174B82Y10/00B82Y40/00
    • A semiconductor manufacturing method comprising, a data generating process including, acquiring a simulation light pattern that simulates a shape of a light exposure pattern formed on a substrate on the basis of design data of a semiconductor device, acquiring a simulation electron beam exposure pattern that simulates a shape of an electron beam exposure pattern formed by an electron beam exposure on the substrate on the basis of the design data, extracting difference information representing a shape difference portion between the simulation light pattern and the simulation electron beam exposure pattern, acquiring changed design data for modifying shape by changing the design data in accordance with the difference information, conducting the electron beam exposure on the substrate by use of the changed design data for modifying the shape.
    • 一种半导体制造方法,包括:数据生成处理,其包括:基于半导体器件的设计数据获取模拟形成在基板上的曝光图案的形状的模拟光图案,获取模拟电子束曝光图案 基于设计数据通过电子束曝光形成的电子束曝光图案的形状,提取表示模拟光图案和模拟电子束曝光图案之间的形状差异部分的差异信息,获取改变的设计数据 用于通过根据差异信息改变设计数据来修改形状,通过使用用于修改形状的改变的设计数据在基板上进行电子束曝光。
    • 37. 发明申请
    • Variable rectangle-type electron beam exposure apparatus and pattern exposure-formation method
    • 可变矩形电子束曝光装置和图案曝光形成方法
    • US20060076513A1
    • 2006-04-13
    • US11055107
    • 2005-02-11
    • Yutaka NakamuraMasaaki MiyajimaHiromi Hoshino
    • Yutaka NakamuraMasaaki MiyajimaHiromi Hoshino
    • G21K5/10
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/31776
    • A variable rectangle-type electron beam exposure apparatus for forming rectangular beams of different angles is provided which is capable of highly finely conducting exposure with respect to a predetermined fine line pattern having an arbitrary angle in the pattern region. The apparatus comprises: a first slit member (10) in which a plurality of rectangular apertures (11, 12) are respectively arranged by different angles; a second slit member (20) in which a plurality of rectangular apertures (21, 22) which are respectively positioned in parallel with the corresponding rectangular apertures of the first slit member, are arranged; and a deflecting unit (40) for deflecting an electron beam, which has been transmitted through a plurality of apertures of the first slit member, so that, when the electron beam transmitted through the first aperture of the first slit member is transmitted through the corresponding first aperture of the second slit member, the electron beam transmitted through the apertures except for the first aperture of the first slit can be intercepted by the second slit member.
    • 提供了用于形成不同角度的矩形束的可变矩形电子束曝光装置,其能够相对于图案区域中具有任意角度的预定细纹图案进行高度细微的曝光。 该装置包括:第一狭缝构件(10),多个矩形孔(11,12)分别以不同的角度布置; 第二狭缝构件(20),其中分别与所述第一狭缝构件的相应矩形孔平行布置的多个矩形孔(21,22)布置; 以及偏转单元(40),用于偏转已经透过第一狭缝部件的多个孔的电子束,使得当透过第一狭缝部件的第一孔的电子束透过相应的 第二狭缝部件的第一开口部分,通过第一狭缝的第一开口部分以外的孔径透过的电子束可被第二狭缝部件截取。