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31. 发明申请

US20050078495A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050078495A1
公开(公告)日：2005-04-14
申请号：US10917374
申请日：2004-08-13
申请人： Jun Koyama , Takeshi Osada , Takanori Matsuzaki
发明人： Jun Koyama , Takeshi Osada , Takanori Matsuzaki
IPC分类号： H01L27/12 , H02M5/42 , H02M7/217
CPC分类号： H02M7/217
摘要： A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.
摘要翻译：由绝缘基板上的薄膜晶体管构成的使用运算放大器和二极管的常规配置的整流电路由于运算放大器的低稳定性和低的高频特性而不能表现整流电路的性能。因此，为了整流高频信号，需要通过在绝缘基板的外部使用IC来构成整流电路。根据本发明，放大器电路和波形整形电路配置有薄膜晶体管，并且通过其信号切换非整流信号，从而可以实现具有优异的高频特性的整流电路。

32. 发明授权

US08767442B2 Semiconductor device including memory cell array 有权
标题翻译：包括存储单元阵列的半导体器件
公开(公告)号：US08767442B2
公开(公告)日：2014-07-01
申请号：US13230093
申请日：2011-09-12
申请人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： H01L27/1052 , G11C8/08 , G11C11/403 , G11C11/405 , G11C11/4085 , G11C16/02 , G11C16/0433 , G11C16/0483 , G11C16/08 , G11C2211/4016
摘要： A semiconductor device in which stored data can be held even when power is not supplied and there is no limitation on the number of writing operations is provided. A semiconductor device is formed using a material which can sufficiently reduce the off-state current of a transistor, such as an oxide semiconductor material that is a wide-gap semiconductor. When a semiconductor material which can sufficiently reduce the off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, by providing a capacitor or a noise removal circuit electrically connected to a write word line, a signal such as a short pulse or a noise input to a memory cell can be reduced or removed. Accordingly, a malfunction in which data written into the memory cell is erased when a transistor in the memory cell is instantaneously turned on can be prevented.
摘要翻译：即使在不提供电力的情况下也可以保存存储的数据，并且没有限制写入操作的数量的半导体装置。使用可以充分降低诸如作为宽间隙半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。当使用可以充分降低晶体管的截止电流的半导体材料时，半导体器件可以长期保存数据。此外，通过提供电连接到写字线的电容器或噪声去除电路，可以减少或去除诸如短脉冲或输入到存储器单元的噪声的信号。因此，可以防止当存储单元中的晶体管瞬间导通时擦除写入存储单元的数据的故障。

33. 发明授权

US08654566B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08654566B2
公开(公告)日：2014-02-18
申请号：US13221947
申请日：2011-08-31
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： G11C11/24
CPC分类号： G11C11/403 , G11C16/0433 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1156 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.
摘要翻译：半导体器件包括存储单元，其包括第一晶体管，第一晶体管包括第一沟道形成区，第一栅电极以及第一源区和漏区; 第二晶体管，包括设置成与第一源极区域或第一漏极区域中的至少一部分重叠的第二沟道形成区域，第二源极电极，电连接到第一栅极电极的第二漏极电极，以及第二栅电极; 以及设置在第一晶体管和第二晶体管之间的绝缘层。在第二晶体管需要处于截止状态的期间中，至少当向第一源极区域或第一漏极区域提供正电位时，向第二栅电极提供负电位。

34. 发明授权

US08634228B2 Driving method of semiconductor device 有权
标题翻译：半导体器件的驱动方法
公开(公告)号：US08634228B2
公开(公告)日：2014-01-21
申请号：US13220066
申请日：2011-08-29
申请人： Takanori Matsuzaki , Kiyoshi Kato
发明人： Takanori Matsuzaki , Kiyoshi Kato
IPC分类号： G11C11/24 , G11C11/404
CPC分类号： G11C11/404 , G11C11/403
摘要： A driving method of a semiconductor device is provided. In a semiconductor device including a bit line, a selection line, a selection transistor, m (m is a natural number greater than or equal to 2) writing word lines, m reading word lines, a source line, and first to m-th memory cells, each memory cell includes a first transistor and a second transistor that holds charge accumulated in a capacitor. The second transistor includes a channel formed in an oxide semiconductor layer. In a driving method of a semiconductor device having the above structure, when writing to a memory cell is performed, the first transistor is turned on so that a first source terminal or a first drain terminal is set to a fixed potential; thus, a potential is stably written to the capacitor.
摘要翻译：提供了一种半导体器件的驱动方法。在包括位线，选择线，选择晶体管，m（m是大于或等于2的自然数）的半导体器件中，写入字线，m读取字线，源极线和第一至第m 存储单元，每个存储单元包括第一晶体管和保持蓄积在电容器中的电荷的第二晶体管。第二晶体管包括形成在氧化物半导体层中的沟道。在具有上述结构的半导体器件的驱动方法中，当执行对存储单元的写入时，第一晶体管导通，使得第一源极端子或第一漏极端子被设定为固定电位; 因此，电位稳定地写入电容器。

35. 发明授权

US08582348B2 Semiconductor device and method for driving semiconductor device 有权
标题翻译：用于驱动半导体器件的半导体器件和方法
公开(公告)号：US08582348B2
公开(公告)日：2013-11-12
申请号：US13195089
申请日：2011-08-01
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C8/00 , G11C8/18 , G11C5/14 , G11C11/34 , G11C14/00
CPC分类号： G11C16/0408 , G11C11/405 , G11C16/02
摘要： It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保持存储的数据，并且对写入操作的数量没有限制。半导体器件包括多个存储单元，每个存储单元包括包括第一半导体材料的晶体管，包括与第一半导体材料不同的第二半导体材料的晶体管，以及电容器，以及电位切换电路，在写作期间的电源供应潜力。因此，可以充分地抑制半导体器件的功耗。

36. 发明授权

US08525585B2 Demodulation circuit and RFID tag including the demodulation circuit 有权
公开(公告)号：US08525585B2
公开(公告)日：2013-09-03
申请号：US13558694
申请日：2012-07-26
申请人： Takanori Matsuzaki , Yutaka Shionoiri
发明人： Takanori Matsuzaki , Yutaka Shionoiri
IPC分类号： H03D1/00
CPC分类号： H03D1/18 , H01L27/1225
摘要： An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received.

37. 发明授权

US08451651B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08451651B2
公开(公告)日：2013-05-28
申请号：US13027543
申请日：2011-02-15
申请人： Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
发明人： Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C16/0408 , H01L27/11519 , H01L27/11521 , H01L27/1156
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。使用能够充分降低诸如大孔半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。能够充分降低晶体管的截止电流的半导体材料的使用允许长时间保持数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

38. 发明授权

US08406038B2 Semiconductor device 有权
公开(公告)号：US08406038B2
公开(公告)日：2013-03-26
申请号：US13094863
申请日：2011-04-27
申请人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Toshihiko Saito , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： H01L29/78 , G11C11/403 , G11C11/406 , G11C16/0416 , G11C2211/4065 , H01L27/11521 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off.

39. 发明授权

US08339837B2 Driving method of semiconductor device 有权
标题翻译：半导体器件的驱动方法
公开(公告)号：US08339837B2
公开(公告)日：2012-12-25
申请号：US13206547
申请日：2011-08-10
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C16/0433 , G11C11/404
摘要： A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.
摘要翻译：提供具有新颖结构的半导体器件及其驱动方法。一种半导体器件包括：非易失性存储单元，包括包括氧化物半导体的写入晶体管，包括与写入晶体管的半导体材料不同的半导体材料的读取P沟道晶体管，以及电容器。通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及然后关闭写入晶体管，使得节点中保持预定量的电荷。在保持期间，将存储单元置于选择状态，将读取晶体管的源电极和漏电极设定为相同的电位，由此保存存储在节点中的电荷。

40. 发明申请

US20120269013A1 SIGNAL PROCESSING CIRCUIT 有权
标题翻译：信号处理电路
公开(公告)号：US20120269013A1
公开(公告)日：2012-10-25
申请号：US13446661
申请日：2012-04-13
申请人： Takanori Matsuzaki
发明人： Takanori Matsuzaki
IPC分类号： G11C7/00
CPC分类号： G11C7/00 , G11C11/404 , G11C16/0416 , H01L27/1156 , H01L27/1225
摘要： A signal processing circuit including a nonvolatile storage circuit with a novel structure. The signal processing circuit includes a circuit that is supplied with a power supply voltage and has a first node to which a first high power supply potential is applied, and a nonvolatile storage circuit for holding a potential of the first node. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer, and a second node that is brought into a floating state when the transistor is turned off. A second high power supply potential or a ground potential is input to a gate of the transistor. When the power supply voltage is not supplied, the ground potential is input to the gate of the transistor and the transistor is kept off. The second high power supply potential is higher than the first high power supply potential.
摘要翻译：一种包括具有新颖结构的非易失性存储电路的信号处理电路。信号处理电路包括被提供有电源电压并具有施加第一高电源电位的第一节点的电路和用于保持第一节点的电位的非易失性存储电路。非易失性存储电路包括其沟道形成在氧化物半导体层中的晶体管，以及当晶体管截止时成为浮置状态的第二节点。第二高电源电位或接地电位被输入到晶体管的栅极。当不提供电源电压时，接地电位被输入到晶体管的栅极，并且晶体管保持截止。第二个高电源电位高于第一个高电源电位。

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