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31. 发明申请

US20130314708A1 Method and Apparatus for Maintaining Depth of Focus 有权
标题翻译：保持焦点深度的方法和装置
公开(公告)号：US20130314708A1
公开(公告)日：2013-11-28
申请号：US13964931
申请日：2013-08-12
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chang-Tsun Hsieh , Fu-Jye Liang , Tzung-Chi Fu , Li-Jui Chen , Chih-Ming Ke
IPC分类号： G03F9/00
CPC分类号： G03F7/70616 , G02B7/28 , G03F7/70575 , G03F7/70641 , G03F9/70 , G03F9/7026
摘要： A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.
摘要翻译：一种方法包括将辐射束沿着光轴引向工件支撑件，在第一时间测量光束的光谱以获得第一分布，在第二时间测量光束的光谱以获得第二分布，确定两个轮廓之间的光谱差异，并且基于该差异来调整沿着光轴的工件支撑件的位置。不同的方面涉及一种具有工件支撑件的装置，将导光束沿着光轴朝向工件支撑件的光束引导结构，光谱测量结构，其在第一次和第二次测量光束的光谱以获得相应的第一和第二轮廓，确定两个轮廓之间的差异的处理结构，以及基于该差异来调整沿着光轴的工件支撑件的位置的支撑调整结构。

32. 发明授权

US08592107B2 Method and apparatus of providing overlay 有权
标题翻译：提供覆盖的方法和装置
公开(公告)号：US08592107B2
公开(公告)日：2013-11-26
申请号：US13667124
申请日：2012-11-02
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Guo-Tsai Huang , Fu-Jye Liang , Li-Jui Chen , Chih-Ming Ke
IPC分类号： G03F1/00 , H01L21/66
CPC分类号： G03F7/70283 , G03F7/70633 , H01L2924/0002 , H01L2924/00
摘要： Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.
摘要翻译：提供了一种包括重叠标记的装置。覆盖标记包括包括多个第一特征的第一部分。每个第一特征具有在第一方向上测量的第一尺寸和在大致垂直于第一方向的第二方向上测量的第二尺寸。第二维度大于第一维度。覆盖标记还包括包括多个第二特征的第二部分。每个第二特征具有在第一方向上测量的第三尺寸，并且在第二方向上测量第四尺寸。第四个维度小于第三个维度。第二特征中的至少一个在第一和第二方向上被多个第一特征部分地包围。

33. 发明授权

US11556065B2 Wafer stage and method thereof 有权
公开(公告)号：US11556065B2
公开(公告)日：2023-01-17
申请号：US17468432
申请日：2021-09-07
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Yu-Huan Chen , Yu-Chih Huang , Ya-An Peng , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC分类号： G03F7/20
摘要： A method includes moving a wafer stage to a first station on a table body of a lithography chamber; placing a wafer on a top surface of the wafer stage; emitting a first laser beam from a first laser emitter toward a first beam splitter on a first sidewall of the wafer stage, wherein a first portion of the first laser beam is reflected by the first beam splitter to form a first reflected laser beam, and a second portion of the first laser beam transmits through the first beam splitter to form a first transmitted laser beam; calculating a position of the wafer stage on a first axis based on the first reflected laser beam; after calculating the position of the wafer, moving the wafer stage to a second station on the table body; and performing a lithography process to the wafer.

34. 发明申请

US20220365421A1 PELLICLE ASSEMBLY AND METHOD OF MAKING SAME 有权
公开(公告)号：US20220365421A1
公开(公告)日：2022-11-17
申请号：US17318315
申请日：2021-05-12
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Li-Jui Chen , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G03F1/64 , H01L21/033
摘要： A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.

35. 发明申请

US20220334496A1 PARTICLE REMOVAL DEVICE AND METHOD 有权
公开(公告)号：US20220334496A1
公开(公告)日：2022-10-20
申请号：US17856651
申请日：2022-07-01
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Cheng-Hsuan Wu , Ming-Hsun Tsai , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC分类号： G03F7/20
摘要： A particle removal device, along with methods of using such, are described. The device includes a handheld module having a body. A first one or more channels and a second one or more channels are formed in the body. The body includes a nozzle, and the handheld module is configured to provide suction by the nozzle and to inject an ionized fluid stream by the nozzle. The body further includes a handle attached to the nozzle.

36. 发明授权

US10048604B2 System and method for lithography with leveling sensor 有权
公开(公告)号：US10048604B2
公开(公告)日：2018-08-14
申请号：US15207861
申请日：2016-07-12
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Li-Jui Chen
IPC分类号： G03B27/68 , G03B27/52 , G03B27/58 , G03F9/00 , G03F7/20
摘要： Disclosed is a lithography system. The lithography system includes a radiation source for providing radiation energy; a reticle stage configured to hold a reticle; an imaging lens module configured to direct the radiation energy onto a substrate to form an image of the reticle; and a leveling sensor configured to receive a leveling signal from an exposure field of the reticle secured on the reticle stage.

37. 发明申请

US20150338747A1 Wafer Stage Temperature Control 审中-公开
标题翻译：晶圆级温度控制
公开(公告)号：US20150338747A1
公开(公告)日：2015-11-26
申请号：US14285141
申请日：2014-05-22
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Li-Jui Chen , Rui-Cheng Wu
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , G03F7/2041 , G03F7/70516 , G03F7/70716 , G03F7/70875 , H01L21/682
摘要： A method includes loading a wafer onto a wafer stage of a lithography system, the wafer stage comprising a heating component and a temperature sensing component. The method further includes controlling the heating component such that a temperature of the wafer stage approaches a desired point. The controlling step comprises use of a characterization curve associated with the heating component.
摘要翻译：一种方法包括将晶片加载到光刻系统的晶片台上，晶片台包括加热部件和温度感测部件。该方法还包括控制加热部件，使得晶片台的温度接近所需点。控制步骤包括使用与加热部件相关联的特性曲线。

38. 发明授权

US11630393B2 Apparatus and method for generating extreme ultraviolet radiation 有权
公开(公告)号：US11630393B2
公开(公告)日：2023-04-18
申请号：US17688313
申请日：2022-03-07
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Chieh Hsieh , Kuan-Hung Chen , Chun-Chia Hsu , Shang-Chieh Chien , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
IPC分类号： G03F7/20 , G06F30/39
摘要： An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

39. 发明授权

US11567415B2 Inspection system for extreme ultraviolet (EUV) light source 有权
公开(公告)号：US11567415B2
公开(公告)日：2023-01-31
申请号：US17382955
申请日：2021-07-22
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chiao-Hua Cheng , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen , Sheng-Kang Yu
IPC分类号： G03F7/20 , G06T7/00 , H04N5/232 , H04N5/225
摘要： A method for inspecting an extreme ultraviolet (EUV) light source includes: removing a collector mirror of the EUV light source from a collector chamber; installing an inspection apparatus within the collector chamber, the apparatus including a selectively extendable and retractable member and a camera at one end of the member; operating a first actuator to extend the member along a path through the interior chamber of the EUV light source, thereby moving the camera to a given position within the interior chamber of the EUV light source; operating a second actuator to pan the camera about an axis of rotation, thereby establishing a given camera orientation within the interior of the EUV light source; and, capturing an image of the interior chamber of the EUV light source with the camera while the camera is at the given position and orientation established by the operation of the first and second actuators.

40. 发明授权

US11553581B2 Radiation source apparatus and method for using the same 有权
公开(公告)号：US11553581B2
公开(公告)日：2023-01-10
申请号：US17369740
申请日：2021-07-07
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Chiao-Hua Cheng , Hsin-Feng Chen , Yu-Fa Lo , Yu-Kuang Sun , Wei-Shin Cheng , Yu-Huan Chen , Ming-Hsun Tsai , Cheng-Hao Lai , Cheng-Hsuan Wu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen , Sheng-Kang Yu
IPC分类号： H05G2/00 , G03F7/20
摘要： A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.

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