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31. 发明授权

US06455437B1 Method and apparatus for monitoring the process state of a semiconductor device fabrication process 失效
标题翻译：用于监测半导体器件制造工艺的工艺状态的方法和装置
公开(公告)号：US06455437B1
公开(公告)日：2002-09-24
申请号：US09288041
申请日：1999-04-07
申请人： Jed Davidow , Moshe Sarfaty , Dimitris Lymberopoulos
发明人： Jed Davidow , Moshe Sarfaty , Dimitris Lymberopoulos
IPC分类号： H01L21302
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/32935 , H01L21/67069 , H01L21/67265
摘要： A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one frequency component is generated based on the intensity of the collected electromagnetic emissions; or, the RF power delivered to a wafer pedestal is monitored and serves as the detection signal. The magnitude of at least one frequency component of the detection signal then is monitored over time. By monitoring the magnitude of at least one frequency component of the detection signal over time, a characteristic fingerprint of the plasma process is obtained. Features within the characteristic fingerprint provide process state information, process event information and process chamber information. In general, any chemical reaction having an attribute that varies with reaction rate may be similarly monitored.
摘要翻译：提供了一种使用等离子体属性监视过程状态的方法和装置。收集由等离子体产生的电磁辐射，并且基于所收集的电磁辐射的强度产生具有至少一个频率分量的检测信号; 或者，监视传送到晶片基座的RF功率并用作检测信号。然后随着时间监视检测信号的至少一个频率分量的幅度。通过随时间监视检测信号的至少一个频率分量的幅度，获得等离子体处理的特征指纹。特征指纹内的特征提供过程状态信息，过程事件信息和处理室信息。通常，可以类似地监测具有随反应速率变化的属性的任何化学反应。

32. 发明授权

US06413867B1 Film thickness control using spectral interferometry 有权
标题翻译：使用光谱干涉测量的膜厚度控制
公开(公告)号：US06413867B1
公开(公告)日：2002-07-02
申请号：US09470828
申请日：1999-12-23
申请人： Moshe Sarfaty , Lalitha S. Balasubramhanya , Jed E. Davidow , Dimitris P. Lymberopoulos
发明人： Moshe Sarfaty , Lalitha S. Balasubramhanya , Jed E. Davidow , Dimitris P. Lymberopoulos
IPC分类号： H01L21302
CPC分类号： H01L22/26 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.
摘要翻译：用于控制诸如等离子体蚀刻操作之类的衬底处理操作的过程。本发明的方法的一个实施例在衬底处理室内形成等离子体，以蚀刻设置在腔室内的晶片。该等离子体发射被用作宽带光源。在等离子体蚀刻工艺期间，用光谱仪测量从正在蚀刻的晶片的表面反射的多个波长的辐射。然后使用模式识别技术将这些测量值与之前的等离子体蚀刻操作期间的先前测量值进行比较。本发明的某些实施例使用主成分分析（PCA）技术来执行模式识别，而其他实施例使用编程的神经网络模式识别技术。

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