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31. 发明授权

US07179678B1 EBIC response enhancement in type III-VI semiconductor material on silicon 失效
标题翻译：在硅上III-VI族半导体材料的EBIC响应增强
公开(公告)号：US07179678B1
公开(公告)日：2007-02-20
申请号：US10927276
申请日：2004-08-26
申请人： Zhizhang Chen , Hang Liao , David M. Schut , Michael Setera
发明人： Zhizhang Chen , Hang Liao , David M. Schut , Michael Setera
IPC分类号： H01L21/00
CPC分类号： H01L21/3245 , H01L31/1864 , Y02P70/521
摘要： A method of processing a type III–VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated to a temperature in the range of 300° C.–600° C. for a period in the range of 20 seconds to 60 minutes in an atmosphere having a composition of 0–10% of hydrogen in nitrogen.
摘要翻译：提供了一种在硅衬底上处理III-VI族半导体材料以改善少数载流子扩散长度和EBIC响应的方法。将该半导体材料在氮气中的组成为0-10％的气氛中，在300〜600℃的温度范围内加热20秒〜60分钟。

32. 发明申请

US20060088980A1 Method of singulating electronic devices 有权
标题翻译：单片电子设备的方法
公开(公告)号：US20060088980A1
公开(公告)日：2006-04-27
申请号：US10975797
申请日：2004-10-27
申请人： Chien-Hua Chen , Zhizhang Chen , Steven Geissler
发明人： Chien-Hua Chen , Zhizhang Chen , Steven Geissler
IPC分类号： H01L21/78 , H01L21/30 , H01L21/50
CPC分类号： B81C1/00888 , H01L21/78 , H01L23/10 , H01L2924/0002 , H01L2924/00
摘要： A method of singulating electronic devices, including aligning a saw blade over a lid street disposed on a lid substrate that is disposed over a device substrate. An electronic device that includes a bond pad is disposed on the device substrate, wherein the lid street is disposed over the bond pad. In addition, the method also includes sawing partially through the lid street to form a trench in the lid street. The trench includes a trench bottom in the lid substrate.
摘要翻译：一种单片电子设备的方法，包括将设置在设置在设备基板上的盖基板上的盖街道上的锯片对准。包括接合焊盘的电子设备设置在设备基板上，其中盖路设置在接合焊盘上方。此外，该方法还包括部分地通过盖街道锯切以在盖街道中形成沟槽。沟槽包括在盖基板中的沟槽底部。

33. 发明授权

US06902458B2 Silicon-based dielectric tunneling emitter 有权
标题翻译：硅基电介质隧道发射极
公开(公告)号：US06902458B2
公开(公告)日：2005-06-07
申请号：US10755890
申请日：2004-01-12
申请人： Zhizhang Chen , Michael David Bic , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
发明人： Zhizhang Chen , Michael David Bic , Ronald L. Enck , Michael J. Regan , Thomas Novet , Paul J. Benning
IPC分类号： G11C13/04 , H01J1/312 , H01J9/02 , H01J19/24 , H01J21/06 , H01J29/04 , H01J31/12 , H01L29/06 , H01J9/04
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译：发射体具有形成在电子供给层上的电子供给层和硅基电介质层。硅基电介质层优选小于约500埃。可选地，在电子供给层上形成绝缘体层，并且限定了形成硅基电介质层的开口。在硅基电介质层上形成阴极层，以提供电子和/或光子能量发射的表面。优选地，对发射极进行退火处理，从而增加从电子供给层隧穿到阴极层的电子的供应。

34. 发明授权

US06825969B2 MEMS-actuated color light modulator and methods 失效
标题翻译： MEMS致动彩色光调制器及方法
公开(公告)号：US06825969B2
公开(公告)日：2004-11-30
申请号：US10800326
申请日：2004-03-11
申请人： Zhizhang Chen , Michael A. Pate , Hung Liao
发明人： Zhizhang Chen , Michael A. Pate , Hung Liao
IPC分类号： G02B2600
CPC分类号： G02B26/0866 , G02B26/0808 , G02B26/0833 , G02B26/0841
摘要： A light modulator has one or more gratings and one or more MEMS actuators operable to move the gratings for selectively modulating light from an input light source. Certain embodiments have a plurality of blazed gratings arranged parallel to a plane and movable linearly parallel to the plane by MEMS actuators. Each of the gratings is individually blazed for light of a selected color such as red, green or blue. Associated with the gratings may be portions providing black and/or white outputs. An aperture spaced apart from the plane allows color(s) selected from an input white-light source to be directed to an output. An array of MEMS-actuated modulation devices provides a color spatial light modulator. Other embodiments have a grating adapted to be tilted by a MEMS actuator, either continuously through a range of angles or to a selected angle of a set of predetermined discrete angles, to direct selected wavelengths diffracted by the grating toward collection optics for a modulated light output. Methods specially adapted for making and using such light modulators are disclosed.
摘要翻译：光调制器具有一个或多个光栅和一个或多个MEMS致动器，其可操作以移动光栅以选择性地调制来自输入光源的光。某些实施例具有多个平行于平面布置的闪耀的光栅，并且可通过MEMS致动器线性平行于该平面移动。每个光栅被单独地闪耀成所选颜色的光，例如红色，绿色或蓝色。与光栅相关的可以是提供黑色和/或白色输出的部分。与平面间隔开的孔允许从输入白光源选择的颜色被引导到输出。 MEMS致动调制装置的阵列提供了一种彩色空间光调制器。其他实施例具有适于由MEMS致动器倾斜的光栅，连续地通过一定范围的角度或一组预定离散角度的选定角度，以将由光栅衍射的所选波长引导到用于调制光输出的收集光学器件。公开了专门用于制造和使用这种光调制器的方法。

35. 发明授权

US5510271A Processes for producing low cost, high efficiency silicon solar cells 失效
标题翻译：生产低成本，高效率硅太阳能电池的工艺
公开(公告)号：US5510271A
公开(公告)日：1996-04-23
申请号：US303340
申请日：1994-09-09
申请人： Ajeet Rohatgi , Zhizhang Chen , Parag Doshi
发明人： Ajeet Rohatgi , Zhizhang Chen , Parag Doshi
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.
摘要翻译：提供利用快速热处理（RTP）的方法用于廉价生产高效硅太阳能电池。 RTP工艺保护少数载体体积寿命τ，并允许选择性地调整硅衬底内扩散区的深度，包括发射极和背面场（bsf）。硅太阳能电池效率达到16.9％。在第一RTP工艺中，利用RTP步骤同时将磷和铝分别扩散到硅衬底的前表面和后表面。此外，原位控制的冷却程序保留载体体积寿命τ，并允许对扩散区域的深度的选择性调节。在第二个RTP过程中，在RTP步骤中完成磷和铝的同时扩散以及前后接触的退火。在第三RTP工艺中，RTP步骤同时实现磷和铝的扩散，接触退火，以及双层抗反射/钝化涂层SiN / SiOx的退火。

36. 发明申请

US20090258669A1 IMPULSE ULTRA-WIDEBAND RADIO COMMUNICATION SYSTEM 有权
标题翻译： IMPULSE ULTRA-WIDEBAND无线电通信系统
公开(公告)号：US20090258669A1
公开(公告)日：2009-10-15
申请号：US12103117
申请日：2008-04-15
申请人： Hong Nie , Zhizhang Chen
发明人： Hong Nie , Zhizhang Chen
IPC分类号： H04M1/00
CPC分类号： H04B1/719 , H04B1/71637
摘要： A method and apparatus are provided for implementing an impulse ultra-wideband communications system which combines the technique of transmitted reference (TR) with a code-sifted reference scheme that separates the reference and the data pulses with a sequence of codes such as a subset of Walsh codes. The combination of the two techniques in ultra-wideband (UWB) radio systems removes the wideband delay elements required by conventional TR UWB systems. The invention provides a system with no analog carriers and lower complexities than other UWB systems, and which has better performances, higher tolerance to nonlinearity, and larger capacities
摘要翻译：提供了一种用于实现脉冲超宽带通信系统的方法和装置，该脉冲超宽带通信系统将传输参考（TR）的技术与使用诸如子集的子序列分离参考和数据脉冲的代码筛选参考方案进行组合沃尔什码超宽带（UWB）无线电系统中的两种技术的组合消除了传统TR UWB系统所需的宽带延迟元件。本发明提供一种不具有模拟载波并且具有比其它UWB系统更低复杂度的系统，其具有更好的性能，更高的对非线性的容忍性和更大的容量

37. 发明授权

US07491595B2 Creating high voltage FETs with low voltage process 有权
标题翻译：用低压工艺制造高压FET
公开(公告)号：US07491595B2
公开(公告)日：2009-02-17
申请号：US11176033
申请日：2005-07-06
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region is formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。在有源区域的至少一部分中形成沟道阻挡区域，其中沟道阻挡区域被形成为具有作为HV-第二导电FET的第二导电漂移部分工作的能力。

38. 发明申请

US20070254405A1 3D Interconnect with Protruding Contacts 失效
标题翻译： 3D互连触点
公开(公告)号：US20070254405A1
公开(公告)日：2007-11-01
申请号：US11778196
申请日：2007-07-16
申请人： Chien-Hua Chen , Zhizhang Chen , Neal Meyer
发明人： Chien-Hua Chen , Zhizhang Chen , Neal Meyer
IPC分类号： H01L21/50
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译：本发明涉及一种具有突出接点的半导体，包括：第一半导体衬底，具有至少一个基本上位于第一衬底内的互连，第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。

39. 发明授权

US07262495B2 3D interconnect with protruding contacts 有权
标题翻译： 3D连接突出接触
公开(公告)号：US07262495B2
公开(公告)日：2007-08-28
申请号：US10960827
申请日：2004-10-07
申请人： Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
发明人： Chien-Hua Chen , Zhizhang Chen , Neal W. Meyer
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/72 , H01L24/80 , H01L25/0657 , H01L2224/0401 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/13144 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
摘要翻译：本发明涉及一种具有突出接点的半导体，包括：第一半导体衬底，具有至少一个基本上位于第一衬底内的互连，第二半导体衬底具有至少一个基本上接触至少一个互连的突出接触点。

40. 发明授权

US07002820B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US07002820B2
公开(公告)日：2006-02-21
申请号：US10871761
申请日：2004-06-17
申请人： Zhizhang Chen , Mark David Johnson , Lung Tran
发明人： Zhizhang Chen , Mark David Johnson , Lung Tran
IPC分类号： G11C19/08
CPC分类号： G11B9/1409 , G11B9/00 , G11B9/04 , G11B9/14 , G11B9/1427 , Y10S977/943
摘要： A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current through the storage area between the tip electrode and media electrode.
摘要翻译：一种半导体存储装置，包括尖端电极，介质电极和存储介质。存储介质具有可配置为处于多个结构状态之一的存储区域，以通过使电流通过尖端电极和介质电极之间的存储区域来表示存储在存储区域的信息。

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