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1. 发明申请

US20070010052A1 Creating high voltage fets with low voltage process 有权
标题翻译：用低电压工艺制造高压电源
公开(公告)号：US20070010052A1
公开(公告)日：2007-01-11
申请号：US11176033
申请日：2005-07-06
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238 , H01L21/336
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分上的沟道截止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

2. 发明授权

US07704819B2 Creating high voltage FETs with low voltage process 有权
标题翻译：用低压工艺制造高压FET
公开(公告)号：US07704819B2
公开(公告)日：2010-04-27
申请号：US12350102
申请日：2009-01-07
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity− drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分中的沟道停止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

3. 发明申请

US20090130812A1 Creating High Voltage FETs with Low Voltage Process 有权
标题翻译：创建具有低电压工艺的高压FET
公开(公告)号：US20090130812A1
公开(公告)日：2009-05-21
申请号：US12350102
申请日：2009-01-07
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8234
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity− drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region I s formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity− drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。在有源区的至少一部分中形成第一导电阱，其中第一导电阱被形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。形成在有源区域的至少一部分中的沟道停止区域I s，其中沟道阻挡区域形成为具有作为HV-第二导电FET的第二导电漂移部分的能力。

4. 发明授权

US07491595B2 Creating high voltage FETs with low voltage process 有权
标题翻译：用低压工艺制造高压FET
公开(公告)号：US07491595B2
公开(公告)日：2009-02-17
申请号：US11176033
申请日：2005-07-06
申请人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
发明人： Chin Huang , Jeff Hintzman , James Weaver , Zhizhang Chen
IPC分类号： H01L21/8238
CPC分类号： H01L21/82385 , H01L21/823807 , H01L21/823814 , H01L29/0638 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7816 , H01L29/7835
摘要： An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region is formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
摘要翻译：集成电路（IC）包括高压第一导电型场效应晶体管（HV-第一导电FET）和高电压第二类场效应晶体管（HV-第二导电FET）。 HV第一导电FET具有形成在第二导电阱上的第二导电阱和场氧化物以限定有源区。第一导电阱形成在有源区的至少一部分中，其中第一导电阱形成为具有作为HV第一导电FET的第一导电漂移部分工作的能力。 HV第二导电FET具有形成在第一导电阱上的第一导电阱和场氧化物以限定有源区。在有源区域的至少一部分中形成沟道阻挡区域，其中沟道阻挡区域被形成为具有作为HV-第二导电FET的第二导电漂移部分工作的能力。

5. 发明申请

US20130058381A1 NONLINEAR SIGNAL PROCESSING METHOD AND APPARATUS FOR PULSED-BASED ULTRA-WIDEBAND SYSTEM 审中-公开
标题翻译：基于脉冲超声波系统的非线性信号处理方法及装置
公开(公告)号：US20130058381A1
公开(公告)日：2013-03-07
申请号：US13600681
申请日：2012-08-31
申请人： Zhizhang Chen , Hong Nie , Zhimeng Xu
发明人： Zhizhang Chen , Hong Nie , Zhimeng Xu
IPC分类号： H04B1/707
CPC分类号： H04B1/71637
摘要： A method and apparatus are provided for processing a received pulsed-based ultra-wideband (UWB) signal before the signal is demodulated by an energy detection based receiver. A nonlinear signal processing unit contains one or multiple subunits, and each subunit consists of a nonlinear device and a filter. The nonlinear devices can be any devices that can shift signal, noise, and interference spectra in a nonlinear fashion, and include but are not limited to square law devices and Teager-Kaiser operators. By applying the nonlinear signal processing unit on the received UWB signal, a major part of the energy of noise and narrowband interferences is shifted to specific frequency ranges and then removed by the appropriate filter(s) in the nonlinear signal processing unit. Thus, the signal-to-noise-plus-interference ratio (SNIR) of the received UWB signal can be improved.
摘要翻译：提供一种方法和装置，用于在由基于能量检测的接收机解调信号之前处理接收的基于脉冲的超宽带（UWB）信号。非线性信号处理单元包含一个或多个子单元，每个子单元由非线性设备和滤波器组成。非线性器件可以是可以以非线性方式移动信号，噪声和干扰光谱的任何器件，并且包括但不限于平方律器件和Teager-Kaiser算子。通过对所接收的UWB信号应用非线性信号处理单元，将噪声和窄带干扰能量的主要部分移动到特定频率范围，然后通过非线性信号处理单元中的适当滤波器去除。因此，可以提高接收的UWB信号的信噪比加干扰比（SNIR）。

6. 发明授权

US07049158B2 Method of manufacturing an emitter 有权
标题翻译：制造发射体的方法
公开(公告)号：US07049158B2
公开(公告)日：2006-05-23
申请号：US10688731
申请日：2003-10-15
申请人： Zhizhang Chen , Paul J. Benning , Sriram Ramamoorthi , Thomas Novet
发明人： Zhizhang Chen , Paul J. Benning , Sriram Ramamoorthi , Thomas Novet
IPC分类号： H01L21/00
CPC分类号： B82Y10/00 , G11C11/23 , H01J1/312 , H01J9/025
摘要： A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
摘要翻译：公开了一种用于产生具有平坦的阴极发射表面的发射体的方法：首先在平坦的阴极发射表面上形成导电的保护层。然后在保护层上形成电子透镜结构。最后，蚀刻保护层以暴露平坦的阴极发射表面。

7. 发明授权

US07045958B2 Vacuum device having a getter 有权
标题翻译：具有吸气剂的真空装置
公开(公告)号：US07045958B2
公开(公告)日：2006-05-16
申请号：US10413048
申请日：2003-04-14
申请人： Sriram Ramamoorthi , Zhizhang Chen , John Liebeskind , Ronald L. Enck , Jennifer Shih
发明人： Sriram Ramamoorthi , Zhizhang Chen , John Liebeskind , Ronald L. Enck , Jennifer Shih
IPC分类号： H01J17/24 , H01J19/70 , H01J61/26
CPC分类号： H01J7/186 , F04B37/02 , H01J19/70
摘要： A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.
摘要翻译：一种真空装置，包括基底和具有支撑周边的支撑结构，其中所述支撑结构设置在所述基底上。此外，真空装置还包括具有暴露表面积的不可蒸发的吸气剂层。不可蒸发的吸气剂层设置在支撑结构上方，并且在支撑结构的至少一个方向上延伸超过支撑周边，所述支撑结构在衬底和非蒸发性吸气剂层之间形成真空间隙，增加暴露的表面积。

8. 发明申请

US20060019497A1 Reduced feature-size memory devices and methods for fabricating the same 审中-公开
标题翻译：减少功能尺寸的存储器件及其制造方法
公开(公告)号：US20060019497A1
公开(公告)日：2006-01-26
申请号：US10897178
申请日：2004-07-22
申请人： Zhizhang Chen , Sriram Ramamoorthi , Hang Liao
发明人： Zhizhang Chen , Sriram Ramamoorthi , Hang Liao
IPC分类号： H01L21/302
CPC分类号： H01L21/0338 , G11C11/22 , H01L21/3088 , H01L27/101 , H01L27/24 , H01L45/04 , H01L45/145
摘要： This disclosure relates to systems and methods for reducing feature sizes. One of these methods enables formation of an original feature having a size in a length or width dimension of between about 100 and about 1000 nanometers with a system capable of patterning features to a minimum size of less than or about the size of the original feature and reduction of the size of the original feature below that of the minimum size of the system using an alignment-independent technique.
摘要翻译：本公开涉及用于减小特征尺寸的系统和方法。这些方法中的一种使得能够形成尺寸在大约100和大约1000纳米之间的尺寸在大约100和大约1000纳米之间的原始特征，其中系统能够将特征图案化成小于或者约为原始特征尺寸的最小尺寸，使用对齐无关技术将原始特征的大小减小到系统的最小尺寸的大小。

9. 发明申请

US20050281075A1 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US20050281075A1
公开(公告)日：2005-12-22
申请号：US10871761
申请日：2004-06-17
申请人： Zhizhang Chen , Mark Johnson , Lung Tran
发明人： Zhizhang Chen , Mark Johnson , Lung Tran
IPC分类号： G11B9/00 , G11B9/04 , G11C11/00
CPC分类号： G11B9/1409 , G11B9/00 , G11B9/04 , G11B9/14 , G11B9/1427 , Y10S977/943
摘要： A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current through the storage area between the tip electrode and media electrode.
摘要翻译：一种半导体存储装置，包括尖端电极，介质电极和存储介质。存储介质具有可配置为处于多个结构状态之一的存储区域，以通过使电流通过尖端电极和介质电极之间的存储区域来表示存储在存储区域的信息。

10. 发明申请

US20050110001A9 TUNNELING EMITTER WITH NANOHOLE OPENINGS 有权
标题翻译：用NANOHOLE开口的隧道式发射器
公开(公告)号：US20050110001A9
公开(公告)日：2005-05-26
申请号：US10263055
申请日：2002-10-01
申请人： Zhizhang Chen , Sriram Ramamoorthi , Hung Liao , Paul Benning , Alexander Govyadinov
发明人： Zhizhang Chen , Sriram Ramamoorthi , Hung Liao , Paul Benning , Alexander Govyadinov
IPC分类号： H01J1/312 , H01J9/02 , H01J19/24 , H01J21/06 , H01J29/04 , H01J31/12 , H01L29/06 , H01L29/12
CPC分类号： H01J1/312 , B82Y10/00 , H01J9/022 , H01J2201/3125
摘要： An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.
摘要翻译：发射极具有电子供体和具有纳米孔开口的多孔阴极层。发射极还具有设置在电子源和阴极层之间的隧穿层。

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