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31. 发明申请

US20100251555A1 SHAVER 有权
公开(公告)号：US20100251555A1
公开(公告)日：2010-10-07
申请号：US12600253
申请日：2008-05-30
申请人： Young Ho Park , Byung Sun An
发明人： Young Ho Park , Byung Sun An
IPC分类号： B26B21/08
CPC分类号： B26B21/225
摘要： Disclosed herein is a shaver. The shaver includes a removable cartridge and a handle assembly. The removable cartridge includes a cartridge body, at least one blade mounted to the lower surface of the cartridge body, a connector mounting part provided on the upper surface of the cartridge body, and a connector mounted to the connector mounting part and having a holder mounting part. The handle assembly includes a handle body, a housing provided on a front end of the handle body, a holder mounted to a front end of the housing in such a way as to rotate around a pivot shaft, a removing means functioning to removably couple the holder to the holder mounting part, a manipulating means installed in the housing to be operated in conjunction with the removing means, and a support means elastically supporting rotating motion of the holder using elastic force.
摘要翻译：这里公开了一种剃须刀。剃须刀包括可拆卸的盒和手柄组件。可移除盒包括盒主体，安装到盒主体的下表面的至少一个刀片，设置在盒体上表面上的连接器安装部分和安装到连接器安装部分上的连接器，部分。手柄组件包括手柄主体，设置在手柄主体前端的壳体，以围绕枢转轴旋转的方式安装到壳体的前端的保持器，用于可拆卸地将保持器安装到保持器安装部分，安装在壳体中以与移除装置一起操作的操纵装置，以及支撑装置，其使用弹力弹性地支撑保持器的旋转运动。

32. 发明授权

US07709845B2 Semiconductor light emitting device with improved current spreading structure 失效
标题翻译：具有改善的电流扩展结构的半导体发光器件
公开(公告)号：US07709845B2
公开(公告)日：2010-05-04
申请号：US11588330
申请日：2006-10-27
申请人： Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
发明人： Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/14 , H01L33/32
摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.
摘要翻译：本发明涉及抑制电流浓度的高质量半导体发光器件。半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。在n型半导体层中形成沟槽以防止电流集中。沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

33. 发明授权

US07091055B2 White light emitting diode and method for manufacturing the same 有权
标题翻译：白光发光二极管及其制造方法
公开(公告)号：US07091055B2
公开(公告)日：2006-08-15
申请号：US11087680
申请日：2005-03-24
申请人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
发明人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , Y10S257/918 , H01L2924/00014
摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
摘要翻译：公开了一种白色发光二极管及其制造方法。白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。

34. 发明授权

US5768968A Plastic film food wrap dispenser 失效
标题翻译：塑料薄膜食品包装机
公开(公告)号：US5768968A
公开(公告)日：1998-06-23
申请号：US628889
申请日：1996-04-05
申请人： Young Ho Park , Kathy A. Park
发明人： Young Ho Park , Kathy A. Park
IPC分类号： B26D1/04 , B65H35/00 , B65H35/04 , B26D1/18
CPC分类号： B65H35/04 , B26D1/045 , B65H35/0086 , Y10T83/6572 , Y10T83/8822 , Y10T83/8841
摘要： A dispenser for plastic film, food wrap is provided. The dispenser includes a base for supporting a roll of the plastic film wrap, a puller for engaging an end of the plastic film wrap and removing a selected length of the plastic film wrap, and a cutter movable across the width of the plastic film wrap for cutting said selected length of the plastic film wrap from the roll.
摘要翻译：提供塑料薄膜分配器，食品包装。分配器包括用于支撑塑料膜卷的卷的底座，用于接合塑料薄膜包裹的端部并移除所选择长度的塑料薄膜包裹物的拉头以及可移动穿过塑料薄膜卷的宽度的切割器，从卷中切割所选择的塑料薄膜包裹长度。

35. 发明申请

US20130028490A1 Method of Processing Medical Image of Blood Vessel Using Image Fusion Method 有权
标题翻译：使用图像融合方法处理血管医学图像的方法
公开(公告)号：US20130028490A1
公开(公告)日：2013-01-31
申请号：US13519470
申请日：2012-02-01
申请人： Sung Min Kim , Kwang Yong Shin , Young Ho Park , Hyeon Chang Lee , So Ra Cho , Eui Chul Lee , Gang Ryung Park
发明人： Sung Min Kim , Kwang Yong Shin , Young Ho Park , Hyeon Chang Lee , So Ra Cho , Eui Chul Lee , Gang Ryung Park
IPC分类号： G06K9/00
CPC分类号： G06T5/50 , G06T5/003 , G06T2207/10048 , G06T2207/20221 , G06T2207/30101
摘要： A method of processing a blood vessel image is provided. The method includes (a) sharpening an original blood vessel image using a Gabor filter in consideration of various directions and thicknesses of blood vessels included in the blood vessel and (b) detecting edges according to a change in brightness in a blood vessel domain and a non-blood vessel domain of the original blood vessel image and the blood vessel image on which the Gabor filtering step is completed, using an edge extraction method based on a first-order differentiation or second-order differentiation.
摘要翻译：提供了一种处理血管图像的方法。该方法包括：（a）考虑血管中包含的血管的各种方向和厚度，使用Gabor滤波器来锐化原始血管图像，（b）根据血管结构域的亮度变化检测边缘，使用基于一阶微分或二次微分的边缘提取方法，原始血管图像的非血管结构域和完成了Gabor滤波步骤的血管图像。

36. 发明申请

US20090084397A1 PERM ROD 审中-公开
公开(公告)号：US20090084397A1
公开(公告)日：2009-04-02
申请号：US11862655
申请日：2007-09-27
申请人： Young Ho Park
发明人： Young Ho Park
IPC分类号： A45D2/10 , A45D2/14 , A45D2/16
CPC分类号： A45D2/12 , A45D2/125 , A45D2/127 , A45D2/145 , A45D2/148
摘要： Disclosed herein is a perm rod. The perm rod includes a body, a sheet of permanent wave paper, and a rubber band. The body is made of an aluminum material, has a hollow cylindrical shape, and is configured such that hair is rolled around the body, a plurality of slots is formed in the outer surface of the body, and caps, having coupling protrusions, are fitted into the respective ends of the body. The sheet of permanent wave paper is rolled around the body in the state in which an appropriate number of hairs is placed on the sheet of permanent wave paper. The rubber band has coupling holes, which are formed in the respective ends thereof, and is detachably coupled to the coupling protrusions.
摘要翻译：这里公开了一种烫发棒。烫发杆包括一个主体，一张永久波纸和一个橡皮筋。本体由铝材制成，具有中空圆筒形状，并且构造成使得头发卷绕在本体上，在本体的外表面上形成有多个狭槽，并且具有联接突起的帽被安装进入身体的两端。在永久性纸张上放置适当数量的毛发的状态下，将永久性纸张卷绕在身体周围。橡胶带具有形成在其相应端部的联接孔，并且可拆卸地联接到联接突起。

37. 发明授权

US07468103B2 Method of manufacturing gallium nitride-based single crystal substrate 失效
标题翻译：制造氮化镓基单晶衬底的方法
公开(公告)号：US07468103B2
公开(公告)日：2008-12-23
申请号：US10837709
申请日：2004-05-04
申请人： Soo Min Lee , Hun Joo Hahm , Young Ho Park
发明人： Soo Min Lee , Hun Joo Hahm , Young Ho Park
IPC分类号： C30B25/18
CPC分类号： C30B29/40 , C30B25/02 , C30B25/20 , Y10S117/915
摘要： Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1−x−y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.
摘要翻译：本文公开了一种制造氮化镓基（Al x In y Ga（1-xy）N）的方法，其中0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）单晶基质。该方法包括以下步骤：制备ZnO衬底，主要生长氮化镓基单晶层，然后在主要生长的氮化镓基单晶层上再次生长附加的氮化镓基单晶层，同时去除ZnO衬底通过蚀刻ZnO衬底的下侧。

38. 发明授权

US07268372B2 Vertical GaN light emitting diode and method for manufacturing the same 有权
标题翻译：垂直GaN发光二极管及其制造方法
公开(公告)号：US07268372B2
公开(公告)日：2007-09-11
申请号：US10601597
申请日：2003-06-24
申请人： Young Ho Park , Hun Joo Hahm , J ong Seok Na , Seung Jin Yoo
发明人： Young Ho Park , Hun Joo Hahm , J ong Seok Na , Seung Jin Yoo
IPC分类号： H01L29/24 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/32 , H01L2221/68363
摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.
摘要翻译：公开了一种垂直GaN发光二极管及其制造方法。垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN覆层，形成在第一导电GaN覆层的下表面上的有源层，形成在第一导电GaN覆层有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

39. 发明授权

US07112456B2 Vertical GaN light emitting diode and method for manufacturing the same 有权
标题翻译：垂直GaN发光二极管及其制造方法
公开(公告)号：US07112456B2
公开(公告)日：2006-09-26
申请号：US11115237
申请日：2005-04-27
申请人： Young Ho Park , Hun Joo Hahm , Jeong Seok Na , Seung Jin Yoo
发明人： Young Ho Park , Hun Joo Hahm , Jeong Seok Na , Seung Jin Yoo
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/32 , H01L2221/68363
摘要： Disclosed are a vertical GaN light emitting diode and a method for manufacturing the same. The vertical GaN light emitting diode comprises a first conductive GaN clad layer with an upper surface provided with a first contact formed thereon, an active layer formed on a lower surface of the first conductive GaN clad layer, a second conductive GaN clad layer formed on a lower surface of the active layer, a conductive adhesive layer formed on the second conductive GaN clad layer, and a conductive substrate, with a lower surface provided with a second contact formed thereon, formed on a lower surface of the conductive adhesive layer. The method for manufacturing the vertical GaN light emitting diodes comprises the step of removing the sapphire substrate from the light emitting structure so as to prevent the damages on a GaN single crystal plane of the structure.
摘要翻译：公开了一种垂直GaN发光二极管及其制造方法。垂直GaN发光二极管包括具有形成在其上的第一接触面的上表面的第一导电GaN包覆层，形成在第一导电GaN包层的下表面上的有源层，形成在第一导电GaN包覆层上的第二导电GaN包覆层有源层的下表面，形成在第二导电GaN包覆层上的导电粘合剂层和形成在导电粘合剂层的下表面上的形成有第二接触的下表面的导电基板。用于制造垂直GaN发光二极管的方法包括从发光结构去除蓝宝石衬底的步骤，以防止对结构的GaN单晶面的损坏。

40. 发明授权

US06893889B2 Method for manufacturing gallium nitride-based semiconductor light emitting device 有权
标题翻译：氮化镓系半导体发光元件的制造方法
公开(公告)号：US06893889B2
公开(公告)日：2005-05-17
申请号：US10735615
申请日：2003-12-16
申请人： Young Ho Park , Hun Joo Hahm , Soo Min Lee
发明人： Young Ho Park , Hun Joo Hahm , Soo Min Lee
IPC分类号： H01L33/06 , H01L33/20 , H01L33/32 , H01L33/42 , H01L33/44 , H01L29/06 , H01L31/0336 , H01L31/109
CPC分类号： H01L33/42 , H01L33/38
摘要： A method of manufacturing a gallium nitride-based semiconductor light emitting device, includes sequentially forming, over a substrate, a first conductivity type clad layer, an active layer, and a second conductivity type clad layer, forming a transparent electrode over the second conductivity type clad layer, forming a photoresist film on the transparent electrode such that the transparent electrode is exposed at a predetermined region, removing respective portions of the transparent electrode, second conductivity type clad layer, and active layer corresponding to the predetermined region, thereby partially exposing the first conductivity type clad layer, removing the photoresist film, and forming first and second bonding electrodes on predetermined portions of the transparent electrode and second conductivity type clad layer, respectively.
摘要翻译：一种制造氮化镓基半导体发光器件的方法，包括在衬底上顺序地形成第一导电型覆盖层，有源层和第二导电型覆盖层，在第二导电类型上形成透明电极在所述透明电极上形成光致抗蚀剂膜，使得所述透明电极在预定区域露出，除去与所述预定区域对应的所述透明电极，第二导电型覆盖层和有源层的各部分，从而部分地曝光第一导电型覆盖层，去除光致抗蚀剂膜，以及分别在透明电极和第二导电型覆盖层的预定部分上形成第一和第二接合电极。

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