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31. 发明授权

US08526216B2 Memory device and manufacturing method the same 有权
公开(公告)号：US08526216B2
公开(公告)日：2013-09-03
申请号：US13546013
申请日：2012-07-11
申请人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
发明人： Yoshinobu Asami , Tamae Takano , Masayuki Sakakura , Ryoji Nomura , Shunpei Yamazaki
IPC分类号： G11C11/34 , G11C11/00 , H01L29/12
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

32. 发明授权

US08492758B2 Oxide semiconductor film and semiconductor device 有权
公开(公告)号：US08492758B2
公开(公告)日：2013-07-23
申请号：US12887646
申请日：2010-09-22
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L21/2636 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/12 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

33. 发明授权

US08242988B2 Device substrate, light emitting device and driving method of light emitting device 有权
标题翻译：装置基板，发光装置及发光装置的驱动方法
公开(公告)号：US08242988B2
公开(公告)日：2012-08-14
申请号：US12915086
申请日：2010-10-29
申请人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
发明人： Shunpei Yamazaki , Masayuki Sakakura , Mitsuaki Osame , Takashi Hamada , Tamae Takano , Yu Yamazaki , Aya Anzai
IPC分类号： G09G3/30
CPC分类号： H01L27/1214 , G09G3/3233 , G09G3/3266 , G09G3/3291 , G09G2300/0426 , G09G2300/0814 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/0233 , H01L27/3262 , H01L2251/5323
摘要： A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series.
摘要翻译：一种发光器件，包括发光元件和第一晶体管，以及第二晶体管，控制要在像素中提供给所述发光元件的电流; 第一个晶体管正常工作; 第二晶体管正常断开; 第一晶体管的沟道长度比沟道宽度长; 第二晶体管的沟道长度等于或短于其沟道长度; 第一晶体管和第二晶体管的栅电极彼此连接; 第一晶体管和第二晶体管具有相同的极性; 并且发光元件，第一晶体管和第二晶体管都全部串联连接。

34. 发明授权

US08217396B2 Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region 有权
标题翻译：显示装置包括在连接区域中的电极层接触布线并延伸到像素区域的显示装置
公开(公告)号：US08217396B2
公开(公告)日：2012-07-10
申请号：US11184086
申请日：2005-07-19
申请人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
发明人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC分类号： H01L27/12 , H01L27/32
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
摘要翻译：本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。布线等形成为与绝缘层接触，从而增强布线等的覆盖。此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

35. 发明授权

US08115206B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08115206B2
公开(公告)日：2012-02-14
申请号：US11995224
申请日：2006-07-20
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L29/78645 , H01L27/12 , H01L27/124 , H01L27/283 , H01L29/42384 , H01L29/78696
摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
摘要翻译：本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

36. 发明申请

US20110151603A1 LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110151603A1
公开(公告)日：2011-06-23
申请号：US13034157
申请日：2011-02-24
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L33/48
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L51/5206 , H01L51/5253 , H01L2227/323
摘要： A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
摘要翻译：本发明的发光装置包括：形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层，形成在第一电极和第一绝缘层上，并且由选自氧化硅，氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。

37. 发明授权

US07948171B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07948171B2
公开(公告)日：2011-05-24
申请号：US11352185
申请日：2006-02-10
申请人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Masayuki Sakakura , Takeshi Noda , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译：将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。此外，金属电极被部分蚀刻并用作发光元件的第一电极。缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

38. 发明授权

US07737442B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07737442B2
公开(公告)日：2010-06-15
申请号：US11474933
申请日：2006-06-27
申请人： Shunpei Yamazaki , Masayuki Sakakura , Aya Miyazaki
发明人： Shunpei Yamazaki , Masayuki Sakakura , Aya Miyazaki
IPC分类号： H01L27/146
CPC分类号： H01L29/42384 , H01L27/124 , H01L27/1288 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention has a first conductive layer, a second conductive layer, an insulating layer which is formed between the first conductive layer and the second conductive layer and which has a contact hole, and a third conductive layer which is connected to the first conductive layer and the second conductive layer and of which at least a part of an end portion is formed inside the contact hole. Near a contact hole where the second conductive layer is connected to the third conductive layer, the third conductive layer does not overlap with the second conductive layer with the first insulating layer interposed therebetween and an end portion of the third conductive layer is not formed over the first insulating layer. This allows suppression of depression and projection of the third conductive layer.
摘要翻译：本发明的半导体器件具有：第一导电层，第二导电层，形成在第一导电层和第二导电层之间并具有接触孔的绝缘层;以及第三导电层，其与第一导电层和第二导电层，并且其中至少一部分端部形成在接触孔内。在第二导电层连接到第三导电层的接触孔附近，第三导电层不与第二导电层重叠，其中第一绝缘层被插入，并且第三导电层的端部不形成在第一绝缘层。这允许抑制第三导电层的凹陷和投影。

39. 发明授权

US07629617B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07629617B2
公开(公告)日：2009-12-08
申请号：US11585954
申请日：2006-10-25
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L27/15
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/3276 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L51/524 , H01L51/5246 , H01L51/5256 , H01L51/5259 , H01L51/5284 , H01L2227/323
摘要： The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.
摘要翻译：提高由TFT和发光元件的组合构成的发光装置的可靠性。在第一基板和第二基板之间形成发光元件。发光器件形成在由有机化合物制成的第一绝缘层和由形成在第一绝缘层的表面上的含氮的无机绝缘材料制成的第二绝缘层上。在由发光元件形成的显示区域的外周部分中，通过第二绝缘层上的金属布线形成围绕显示区域的屏蔽图案，并且第一基板和第二基板被固定在一起形成为与屏蔽图案接触的粘合树脂。

40. 发明授权

US07554260B2 Display device provided with a conductive film connection between a wiring component and a metal electrode film 有权
标题翻译：在布线部件和金属电极膜之间设置有导电膜连接的显示装置
公开(公告)号：US07554260B2
公开(公告)日：2009-06-30
申请号：US11168411
申请日：2005-06-29
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H05B33/00 , H01L51/50
CPC分类号： H01L27/3248 , H01L51/5209 , H01L51/5218 , H01L51/5221 , H01L2251/5315
摘要： It is an object of the present invention to prevent a bright pixel defect caused by continuous current flow into a pixel, or to provide a display device in which effects on the surrounding pixels due to concentration of current on a part of the pixel can be suppressed. A display device according to the invention has a wiring for supplying current provided over an insulating surface, and a pixel electrode connected to the wiring. The pixel electrode has a layered structure of a plurality of different conductive films. Further, the pixel electrode has a narrow width region at least in a region where the wiring and the pixel electrode are electrically connected to each other. For example, a layered structure of a metal film and a transparent electrode can be used as a plurality of different conductive films.
摘要翻译：本发明的目的是防止由连续电流流入像素引起的亮像素缺陷，或者提供一种显示装置，其中可以抑制由于像素的一部分上的电流集中而对周围像素的影响。根据本发明的显示装置具有用于提供设置在绝缘表面上的电流的布线和连接到布线的像素电极。像素电极具有多个不同导电膜的分层结构。此外，像素电极至少在布线和像素电极彼此电连接的区域中具有窄的宽度区域。例如，可以使用金属膜和透明电极的分层结构作为多个不同的导电膜。

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