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    • 32. 发明授权
    • Substrate feed chamber and substrate processing apparatus
    • 基板进料室和基板处理装置
    • US06746239B2
    • 2004-06-08
    • US10252392
    • 2002-09-24
    • Nobuyuki Takahashi
    • Nobuyuki Takahashi
    • F27D300
    • H01L21/67742H01L21/67745Y10S414/135
    • A substrate feed chamber that is equipped in a substrate processing apparatus is provided. The substrate feed chamber has a storage tray capable of storing simultaneously three or more substrate holding trays that hold substrates in a vertical or substantially vertical condition and a horizontal movement mechanism that moves horizontally the storage tray with respect to the substrate feed position in order to effect feeding-in or feeding-out movement of the substrate holding tray between any of the chambers of a group consisting of processing chambers and load lock chambers and, in addition, if required, has a rotary movement device that rotates the storage tray. Improvement in throughput in a substrate processing apparatus can thereby be achieved and increase in the ground-contacting area of the device as a whole can be prevented.
    • 提供了设置在基板处理装置中的基板供给室。 基板馈送室具有能够同时存储三个或更多个基板保持托盘的存储托盘,该基板保持托盘保持垂直或基本垂直的状态下的基板;以及水平移动机构,其相对于基板进给位置水平地移动存储托盘,以便实现 基板保持托盘在由处理室和装载锁定室组成的组的任何室之间的进入或送出运动,另外如果需要,还具有使存储托盘旋转的旋转运动装置。 从而可以实现基板处理装置的通过量的提高,并且可以防止装置的接地面积的增加。
    • 36. 发明授权
    • Sputtering apparatus
    • 溅射装置
    • US6022461A
    • 2000-02-08
    • US740011
    • 1996-10-23
    • Masahiko KobayashiNobuyuki Takahashi
    • Masahiko KobayashiNobuyuki Takahashi
    • C23C14/34C23C14/04C23C14/35H01J37/34H01L21/203H01L21/285
    • C23C14/046C23C14/228C23C14/35H01J37/3244H01J37/3408
    • A long distance sputtering apparatus is provided in which a target and a substrate are disposed so as to oppose each other in a vacuum vessel provided with an exhaust system, wherein the target and substrate are separated by a distance of 150 mm or more. The long distance sputtering apparatus includes a gas-introducing tube, a cylindrical shield, and an exhaust hole. The gas-introducing tube introduces gas from a location closer to the target than halfway between the target and the substrate. The shield is disposed so as to surround the space between the target and the substrate. The exhaust hole is formed closer to the substrate than the gas-introducing tube. The pressure distribution of the sputtering gas between the target and the substrate is characterized by a higher pressure toward the target and a lower pressure toward the substrate.
    • 提供了一种长距离溅射装置,其中靶和衬底在设置有排气系统的真空容器中彼此相对设置,其中靶和衬底被分开150mm以上的距离。 长距离溅射装置包括气体导入管,圆筒形罩和排气孔。 气体导入管从距靶子和基板之间的距离较近的位置引入气体。 该屏蔽被设置为围绕靶和基板之间的空间。 排气孔形成为比气体导入管更靠近基板。 靶和基板之间的溅射气体的压力分布的特征在于朝向目标物的压力较高,朝向基板的压力较低。
    • 38. 发明授权
    • Azepine derivatives and use thereof
    • Azepine衍生物及其用途
    • US5658923A
    • 1997-08-19
    • US413285
    • 1995-03-30
    • Nobuyuki TakahashiDaisuke Mochizuki
    • Nobuyuki TakahashiDaisuke Mochizuki
    • C07D221/24A61K31/44
    • C07D221/24
    • An azepine compound of the formula ##STR1## wherein R is (a) ##STR2## in which R.sup.1 is hydrogen, lower alkyl, lower alkoxy, hydroxy, halogen, or optionally substituted phenyl, and n is 0 or 1, (b) cycloalkyl of C.sub.5-8 which is optionally substituted by lower alkyl, (c) norbornyl, (d) bicyclo[3.3.1]nonyl, (e) naphthyl, (f) 1,3-benzoxolyl, (g) pyridyl, or (h) thienyl, m is an integer of 0-4, and C* is an asymmetric carbon, and nontoxic salts thereof, processes for producing the same, and therapeutic agents containing the same as the active ingredient for treating diseases related to .sigma.-receptor. The compound (1) and nontoxic salts thereof have a high affinity for .sigma.-receptor but scarcely any affinity for other receptors, thus being utilized for treating diseases related to .sigma.-receptor, such as schizophrenia.
    • 式(1)的吖庚因化合物其中R是(a)其中R 1是氢,低级烷基,低级烷氧基,羟基,卤素或任选取代的苯基,并且n是0或 1,(b)任选被低级烷基取代的C 5-8的环烷基,(c)降冰片基,(d)双环[3.3.1]壬基,(e)萘基,(f)1,3-苯并恶唑基,(g )吡啶基,或(h)噻吩基,m为0-4的整数,C *为不对称碳,及其无毒盐,其制备方法,以及含有其作为治疗疾病的活性成分的治疗剂 与σ-受体有关。 化合物(1)及其无毒盐对σ-受体具有高亲和力,但对其它受体几乎没有任何亲和力,因此用于治疗与σ-受体有关的疾病,例如精神分裂症。
    • 39. 发明授权
    • Electric discharge machining fluid
    • 放电加工液
    • US5539173A
    • 1996-07-23
    • US144528
    • 1993-11-02
    • Nobuyuki Takahashi
    • Nobuyuki Takahashi
    • B23H1/08B23H5/12
    • B23H5/12B23H1/08
    • An EDM fluid comprising in mixture, a liquid dielectric and a powder, including polycrystalline silicon and a small amount of inorganic oxide, provided for forming a smooth workpiece surface having a carbon-iron-silicon alloy. The powder is preferably present in an amount ranging from about 0.1 to 5.0 wt. % of the liquid dielectric. The inorganic oxide may include silicon oxide, iron oxide, and calcium oxide. Further, a concentrate made by kneading the powder with an oil comprising mainly an aromatic hydrocarbon having a density of more than 0.93 g/milliliter at 15.degree. C. added to the dielectric, whereby the powder is dispersed uniformly.
    • 包括混合物的电火花液体,包括多晶硅和少量无机氧化物的液体电介质和粉末,用于形成具有碳 - 铁 - 硅合金的光滑工件表面。 粉末优选以约0.1至5.0重量%的量存在。 %的液体电介质。 无机氧化物可以包括氧化硅,氧化铁和氧化钙。 此外,通过将粉末与主要包含密度大于0.93g /毫升的芳烃的油在15℃下捏合的浓缩物加入到电介质中,由此粉末均匀分散。