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31. 发明申请

US20060017115A1 One-transistor random access memory technology compatible with metal gate process 有权
标题翻译：单晶体管随机存取技术兼容金属栅极工艺
公开(公告)号：US20060017115A1
公开(公告)日：2006-01-26
申请号：US10896491
申请日：2004-07-22
申请人： Kuo-Chi Tu , Kuo-Chyuan Tzeng , Chung-Yi Chen , C. Shen , Chun-Yao Chen , Hsiang-Fan Lee
发明人： Kuo-Chi Tu , Kuo-Chyuan Tzeng , Chung-Yi Chen , C. Shen , Chun-Yao Chen , Hsiang-Fan Lee
IPC分类号： H01L29/76
CPC分类号： H01L27/10861 , H01L27/10873
摘要： One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric material as a capacitor dielectric of the MIM capacitor embedded isolation structure.
摘要翻译：与金属栅极工艺兼容的单晶体管RAM技术制造由与MIM电容器嵌入式隔离结构的顶部电极相同的金属材料形成的金属栅电极。栅极电介质层由与MIM电容器嵌入式隔离结构的电容器电介质相同的高k电介质材料形成。

32. 发明授权

US06808980B2 Method of process simplification and eliminating topography concerns for the creation of advanced 1T-RAM devices 有权
标题翻译：过程简化的方法和消除创建高级1T-RAM器件的地形问题
公开(公告)号：US06808980B2
公开(公告)日：2004-10-26
申请号：US10310486
申请日：2002-12-05
申请人： Chung-Yi Chen , Min-Hsiung Chiang , Hsien-Yuan Chang
发明人： Chung-Yi Chen , Min-Hsiung Chiang , Hsien-Yuan Chang
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , H01L27/10867
摘要： A new method and structure is provided for the creation of a 1T-RAM cell. Shallow Trench Isolation (STI) regions are provided over a substrate. A 3D capacitor area is defined over the substrate, a patterned layer of polysilicon or HSG polysilicon is created aligned with the 3D capacitor area, providing the bottom plate of a 3D capacitor. Gate oxide is grown to form a dielectric for CMOS gate electrodes and the 3D capacitor dielectric. A patterned layer of polysilicon is created, defining gate electrodes and 3D capacitor upper plates.
摘要翻译：提供了一种新的方法和结构来创建1T-RAM单元。在衬底上提供浅沟槽隔离（STI）区域。三维电容器区域被限定在衬底上，多晶硅或HSG多晶硅的图案化层被创建成与3D电容器区域对准，从而提供3D电容器的底板。生长栅极氧化物以形成用于CMOS栅电极和3D电容器电介质的电介质。产生多晶硅图案层，限定栅电极和3D电容器上板。

33. 发明授权

US06787419B2 Method of forming an embedded memory including forming three silicon or polysilicon layers 失效
标题翻译：形成嵌入式存储器的方法，包括形成三个硅或多晶硅层
公开(公告)号：US06787419B2
公开(公告)日：2004-09-07
申请号：US10248363
申请日：2003-01-14
申请人： Chung-Yi Chen , Jih-Wen Chou , Chih-Hsun Chu
发明人： Chung-Yi Chen , Jih-Wen Chou , Chih-Hsun Chu
IPC分类号： H01L21336
CPC分类号： H01L27/11568 , H01L21/32139 , H01L27/105 , H01L27/11573
摘要： A wafer has a substrate defined with a first region and a second region. An ONO layer, a first silicon layer, and a silicon nitride layer are formed on the substrate in sequence. Then the ONO layer, the first silicon layer, and the silicon nitride layer disposed on the second region are removed. At least one gate oxide layer is formed on the second region and a second silicon layer is deposited on the wafer. After that, a photo-etching process is performed to remove the second silicon layer and the silicon nitride layer on the first region. At least a third silicon layer is formed on the wafer. Photo-etching processes and a plurality of ion implantation processes are then performed to form a gate, a drain, and a source of each MOS transistor on the substrate.
摘要翻译：晶片具有限定有第一区域和第二区域的基板。依次在基板上形成ONO层，第一硅层和氮化硅层。然后去除设置在第二区域上的ONO层，第一硅层和氮化硅层。在第二区域上形成至少一个栅极氧化物层，并且在晶片上沉积第二硅层。之后，进行光蚀刻处理以去除第一区域上的第二硅层和氮化硅层。在晶片上形成至少第三硅层。然后执行光蚀刻工艺和多个离子注入工艺以在衬底上形成每个MOS晶体管的栅极，漏极和源极。

34. 发明授权

US09277167B2 Compensation de-interlacing image processing apparatus and associated method 有权
标题翻译：补偿去隔行图像处理装置及相关方法
公开(公告)号：US09277167B2
公开(公告)日：2016-03-01
申请号：US13337453
申请日：2011-12-27
申请人： Yu-Jen Wang , Chung-Yi Chen
发明人： Yu-Jen Wang , Chung-Yi Chen
IPC分类号： H04N7/12 , H04N11/02 , H04N11/04 , H04N7/01
CPC分类号： H04N7/012 , H04N7/014
摘要： A motion compensation de-interlacing image processing apparatus is provided. The apparatus includes a motion compensation module, a still compensation module, a motion detection module, and a de-interlacing blending module. The motion compensation module generates a motion compensation pixel according to at least one of a current field, a previous field, and a next field of a target pixel to be interpolated. The still compensation module generates a still compensation pixel according to the previous field and the next field of the target pixel. The motion detection module determines a motion index according to the previous field and the next field of the target pixel. The de-interlacing blending module generates the target pixel by weighted averaging the motion compensation pixel and the still compensation pixel according to the motion index.
摘要翻译：提供一种运动补偿去隔行图像处理装置。该装置包括运动补偿模块，静止补偿模块，运动检测模块和去隔行混合模块。运动补偿模块根据要内插的目标像素的当前场，先前场和下一场中的至少一个产生运动补偿像素。静止补偿模块根据目标像素的前一场和下一场产生静止补偿像素。运动检测模块根据目标像素的前一场和下一个场来确定运动索引。去隔行混合模块通过根据运动索引对运动补偿像素和静止补偿像素进行加权平均来生成目标像素。

35. 发明授权

US09196015B2 Image processing apparatus, image processing method and image display system 有权
标题翻译：图像处理装置，图像处理方法和图像显示系统
公开(公告)号：US09196015B2
公开(公告)日：2015-11-24
申请号：US13572897
申请日：2012-08-13
申请人： Chia-Hao Chung , Chung-Yi Chen
发明人： Chia-Hao Chung , Chung-Yi Chen
IPC分类号： H04N7/12 , G06T3/40 , H04N19/105 , H04N19/176 , H04N19/154 , H04N19/587 , H04N7/01
CPC分类号： G06T3/4007 , H04N7/0127 , H04N7/014 , H04N19/105 , H04N19/154 , H04N19/176 , H04N19/587
摘要： An image processing apparatus for generating an intermediate frame according to a previous frame and a next frame is provided. The apparatus includes a determining module and a selecting module. The intermediate frame includes a plurality of intermediate image blocks, each of which corresponds to a motion vector. For each intermediate image block, the determining module determines whether an interpolated image generated according to the motion vector meets a correctness requirement. According to whether the interpolated image meets the correctness requirement, the selecting module selects the interpolated image or a substitutive image different from the interpolated image to represent the intermediate image block.
摘要翻译：提供一种用于根据前一帧和下一帧产生中间帧的图像处理装置。该装置包括确定模块和选择模块。中间帧包括多个中间图像块，每个中间图像块对应于运动矢量。对于每个中间图像块，确定模块确定根据运动矢量生成的内插图像是否满足正确性要求。根据内插图像是否满足正确性要求，选择模块选择内插图像或与内插图像不同的替代图像来表示中间图像块。

36. 发明授权

US08772347B2 Use of a pharmaceutical composition for promoting proliferation and/or migration of skin cells, and for improving wound healing in a subject 有权
标题翻译：使用药物组合物促进皮肤细胞的增殖和/或迁移，以及改善受试者的伤口愈合
公开(公告)号：US08772347B2
公开(公告)日：2014-07-08
申请号：US13445451
申请日：2012-04-12
申请人： Hui-Min Wang , Chung-Yi Chen , Chien-Chih Chiu , Yi-Ting Chou
发明人： Hui-Min Wang , Chung-Yi Chen , Chien-Chih Chiu , Yi-Ting Chou
IPC分类号： A61K31/12 , C07C49/255 , A61K8/35 , A61Q19/08 , A61K8/97
CPC分类号： A61K8/35 , A61K8/97 , A61Q19/08
摘要： A method for promoting proliferation and/or migration of skin cells includes providing a composition containing a compound of formula (I) below; and administrating to the skin cells the composition. A method for improving wound healing in a subject includes providing a composition containing a compound of formula (I) below; and administrating to the subject the composition
摘要翻译：用于促进皮肤细胞增殖和/或迁移的方法包括提供含有下述式（I）化合物的组合物; 并向皮肤细胞施用组合物。一种改善受试者伤口愈合的方法包括提供含有下述式（I）化合物的组合物; 并向受试者施用组合物

37. 发明授权

US08437399B2 Method and associated apparatus for determining motion vectors 有权
标题翻译：用于确定运动矢量的方法和相关装置
公开(公告)号：US08437399B2
公开(公告)日：2013-05-07
申请号：US12366684
申请日：2009-02-06
申请人： Chung-Yi Chen , Su Chun Wang
发明人： Chung-Yi Chen , Su Chun Wang
IPC分类号： H04N7/12
CPC分类号： H04N5/145 , H04N7/014 , H04N19/51 , H04N19/577
摘要： A method and an associated apparatus for determining a motion vector are disclosed. The method includes performing block matching for a first block where an interpolated block is located according to the first frame and the second frame to generate a first candidate motion vector of the interpolated block, performing block matching for a second block where the interpolated block is located according to the first frame and the second frame to generate a second candidate motion vector of the interpolated block, and determining a target motion vector of the interpolated block according to either of the first motion vector and the second candidate motion vector.
摘要翻译：公开了一种用于确定运动矢量的方法和相关联的装置。该方法包括根据第一帧和第二帧对内插块所位于的第一块执行块匹配，以生成内插块的第一候选运动矢量，对内插块所在的第二块执行块匹配根据第一帧和第二帧，生成内插块的第二候选运动矢量，根据第一运动矢量和第二候选运动矢量中的任一个确定内插块的目标运动矢量。

38. 发明授权

US08200032B2 Image processing method and related apparatus for performing image processing operation according to image blocks in horizontal direction 有权
标题翻译：用于根据水平方向上的图像块执行图像处理操作的图像处理方法和相关装置
公开(公告)号：US08200032B2
公开(公告)日：2012-06-12
申请号：US12265725
申请日：2008-11-05
申请人： Jen-Shi Wu , Chung-Yi Chen
发明人： Jen-Shi Wu , Chung-Yi Chen
IPC分类号： G06K9/46 , H04N7/12 , H04N7/01 , H04N5/14
CPC分类号： H04N19/176 , H04N19/423 , H04N19/57
摘要： An image processing method includes generating a block matching result by performing a block matching operation according to a plurality of image blocks in the horizontal direction without referring to an image block in the vertical or other directions and performing an image processing operation according to the block matching result of the block matching operation.
摘要翻译：图像处理方法包括：通过在水平方向上执行与多个图像块的块匹配操作来生成块匹配结果，而不参照垂直方向或其他方向的图像块，并根据块匹配执行图像处理操作块匹配操作的结果。

39. 发明申请

US20110212194A1 Composition for Inhibiting Melanogenesis and Use Thereof 有权
标题翻译：用于抑制黑素生成和用途的组合物
公开(公告)号：US20110212194A1
公开(公告)日：2011-09-01
申请号：US12848380
申请日：2010-08-02
申请人： Hui-Min Wang , Chung-Yi Chen , Zhi-Hong Wen
发明人： Hui-Min Wang , Chung-Yi Chen , Zhi-Hong Wen
IPC分类号： A61K36/54 , A61K31/341 , A61P43/00 , A61P17/00
CPC分类号： A61K36/54 , A61K31/341
摘要： The present invention provides a Cinnamomum subavenium extract for inhibiting melanogenesis. The present invention also provides a composition for inhibiting melanogenesis including compounds inhibit tyrosinase activity.
摘要翻译：本发明提供了一种用于抑制黑素生成的樟脑ium ium提取物。本发明还提供了抑制黑素生成的组合物，包括抑制酪氨酸酶活性的化合物。

40. 发明申请

US20110140188A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110140188A1
公开(公告)日：2011-06-16
申请号：US12635703
申请日：2009-12-11
申请人： Chung-Yi Chen , Li-Yeat Chen , Jung-Chun Lin
发明人： Chung-Yi Chen , Li-Yeat Chen , Jung-Chun Lin
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7881 , H01L27/1203 , H01L29/42324
摘要： A non-volatile memory device including a substrate, a dielectric layer, a floating gate, source and drain regions, a channel region, and a doped layer is provided. The substrate includes a first region and a second region, and the substrate has an uneven surface in the second region. The dielectric layer is located on the substrate in the first region and in the second region to cover the uneven surface. The floating gate is located on the dielectric layer in the first region and is continuously extended to the second region. The source and drain regions are located in the substrate at opposite sides of the floating gate in the first region. The channel region is located in the substrate between the source and drain regions. The doped layer is located on the uneven surface or in the substrate in the second region to serve as a control gate.
摘要翻译：提供了包括衬底，电介质层，浮动栅极，源极和漏极区域，沟道区域和掺杂层的非易失性存储器件。衬底包括第一区域和第二区域，并且衬底在第二区域中具有不平坦的表面。电介质层位于第一区域和第二区域中的衬底上以覆盖不平坦表面。浮栅位于第一区域的介电层上，并连续延伸到第二区域。源极和漏极区域位于第一区域中的浮动栅极的相对侧的衬底中。沟道区位于源极和漏极区之间的衬底中。掺杂层位于第二区域的不平坦表面或衬底中，用作控制栅极。

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