专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07931760B2 Whiskerless plated structure and plating method 有权
标题翻译：无晶圆镀层结构和电镀方法
公开(公告)号：US07931760B2
公开(公告)日：2011-04-26
申请号：US11473014
申请日：2006-06-23
申请人： Seiki Sakuyama , Kozo Shimizu
发明人： Seiki Sakuyama , Kozo Shimizu
IPC分类号： B23K31/00
CPC分类号： C22C13/00 , B32B15/015 , C22C9/02 , C22C13/02 , C23C18/1601 , C23C18/1651 , C23C18/1692 , C23C18/18 , C23C18/1848 , C23C18/48 , C23C18/52 , H01L2924/0002 , Y10T428/12715 , H01L2924/00
摘要： A plated structure is disclosed that includes a base formed of a copper-based material containing copper as a major component, a plating film formed of a tin-based material containing tin as a major component and provided over the base, and a tin-copper compound barrier film located at the boundary between the base and the plating film. The density of the tin-copper compound barrier film is greater than that of copper.
摘要翻译：公开了一种电镀结构，其包括由以铜为主要成分的铜基材料形成的基底，由锡作为主要成分并且设置在基底上的锡基材料形成的镀膜，以及锡 - 铜复合阻挡膜位于基底与镀膜之间的边界处。锡 - 铜化合物阻挡膜的密度大于铜的密度。

32. 发明授权

US07926696B2 Composition 有权
标题翻译：组成
公开(公告)号：US07926696B2
公开(公告)日：2011-04-19
申请号：US12830784
申请日：2010-07-06
申请人： Seiki Sakuyama
发明人： Seiki Sakuyama
IPC分类号： B23K31/02
CPC分类号： H05K3/341 , H05K3/3494 , H05K2201/0209 , H05K2203/304 , H05K2203/308 , Y02P70/613
摘要： A composition for controlling a temperature elevation of an electronic component when soldering the electronic component on a substrate, includes a first resin for providing the composition with adhesion to the electronic component, a curing agent for curing the first resin by heat treatment for soldering, and a second resin for facilitating removal of the composition from the electronic component.
摘要翻译：一种用于在将电子部件焊接在基板上时控制电子部件的温度升高的组合物，包括：第一树脂，用于向组合物提供与电子部件的粘附性;固化剂，用于通过焊接热处理固化第一树脂;以及用于促进从电子部件去除组合物的第二树脂。

33. 发明申请

US20070221710A1 Soldering flux and method for bonding semiconductor element 有权
标题翻译：焊剂和焊接半导体元件的方法
公开(公告)号：US20070221710A1
公开(公告)日：2007-09-27
申请号：US11475001
申请日：2006-06-27
申请人： Toshiya Akamatsu , Seiki Sakuyama
发明人： Toshiya Akamatsu , Seiki Sakuyama
IPC分类号： B23K1/20
CPC分类号： B23K3/0623 , B23K1/203 , B23K2101/40 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： The method for bonding a semiconductor element comprises the step of applying to solder bumps 10 of a semiconductor chip 12 a soldering flux 16 which contains a thermosetting resin, a polyhydric alcohol and an organic acid and in which the thermosetting resin remains uncured after reflow-bonding, the step of reflow-bonding the solder bumps 10 to the electrodes 18 of the circuit board 20 with the soldering flux 16 while melting the solder bumps 10, and the step of filling an underfill material 22 between the semiconductor chip 12 and the circuit board 20 with the soldering flux 16 being left, the underfill material 22 containing a thermosetting resin of the same group as the thermosetting resin contained in the soldering flux 16 and at least one of a curing agent and a cure catalyst for curing the thermosetting resins.
摘要翻译：用于接合半导体元件的方法包括以下步骤：向半导体芯片12的焊料凸块10施加包含热固性树脂，多元醇和有机酸的焊剂16，并且其中热固性树脂在回流焊后保持未固化在熔化焊料凸块10的同时用焊剂16将焊锡凸块10回流到电路板20的电极18的步骤，以及在半导体芯片12和电路板之间填充底部填充材料22的步骤 20，其中剩下焊剂16，底部填充材料22包含与焊剂16中所含的热固性树脂相同组的热固性树脂，以及用于固化热固性树脂的固化剂和固化催化剂中的至少一种。

34. 发明授权

US07119000B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07119000B2
公开(公告)日：2006-10-10
申请号：US10771391
申请日：2004-02-05
申请人： Kozo Shimizu , Seiki Sakuyama
发明人： Kozo Shimizu , Seiki Sakuyama
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L21/563 , H01L24/13 , H01L2224/05001 , H01L2224/05027 , H01L2224/05568 , H01L2224/11462 , H01L2224/11472 , H01L2224/11502 , H01L2224/11849 , H01L2224/11906 , H01L2224/131 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/13099
摘要： The resist film is provided on the surface of the substrate having electrodes, and openings are provided in the resist film at positions of the electrodes on the substrate. The first metal is supplied into the openings. The first metal is then heated to melt and coagulate it. The second metal is then supplied into the openings on the first metal. The first metal and the second metal are heated to melt and coagulate them. The resist film is finally removed. By this method, excellent solder bumps can be formed on the substrate without remnants of the resist film being left on the substrate.
摘要翻译：在具有电极的基板的表面上设置抗蚀剂膜，并且在基板上的电极的位置处在抗蚀剂膜中设置开口。第一个金属被供应到开口中。然后将第一金属加热熔化并使其凝结。然后将第二金属供应到第一金属上的开口中。将第一金属和第二金属加热熔化并凝结。最后除去抗蚀膜。通过该方法，可以在基板上形成优异的焊料凸块，而不会在基板上残留抗蚀剂膜。

35. 发明授权

US06689639B2 Method of making semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06689639B2
公开(公告)日：2004-02-10
申请号：US10291766
申请日：2002-11-12
申请人： Seiki Sakuyama , Masayuki Ochiai , Ichiro Yamaguchi , Joji Fujimori
发明人： Seiki Sakuyama , Masayuki Ochiai , Ichiro Yamaguchi , Joji Fujimori
IPC分类号： H01L2144
CPC分类号： H01L24/12 , H01L24/11 , H01L24/16 , H01L2224/03912 , H01L2224/05001 , H01L2224/05022 , H01L2224/05023 , H01L2224/05027 , H01L2224/05568 , H01L2224/1147 , H01L2224/1148 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01051 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/15787 , H01L2924/181 , H01L2924/00
摘要： A method of making a semiconductor device includes a resin film forming step for forming a resin film on a semiconductor substrate 10 provided with electrode portions 11 to cover the electrode portions 11, an opening forming step for forming openings in the resin film at locations corresponding to the electrode portions 11, a loading step for loading a bump material in the openings, a bump forming step for forming bumps 41 in the openings by heating, and a removing step for removing the resin film.
摘要翻译：制造半导体器件的方法包括：树脂膜形成步骤，用于在设置有电极部分11的半导体衬底10上形成树脂膜以覆盖电极部分11;开口形成步骤，用于在树脂膜中形成开口，电极部分11，用于将凸起材料装载在开口中的装载步骤，用于通过加热在凸起部分形成凸块41的凸块形成步骤，以及去除树脂薄膜的去除步骤。

36. 发明授权

US06630742B2 Method for forming bumps, semiconductor device, and solder paste 有权
标题翻译：用于形成凸块，半导体器件和焊膏的方法
公开(公告)号：US06630742B2
公开(公告)日：2003-10-07
申请号：US10373773
申请日：2003-02-27
申请人： Seiki Sakuyama
发明人： Seiki Sakuyama
IPC分类号： H01L2348
CPC分类号： H05K3/3484 , H01L21/4853 , H01L21/6835 , H01L23/49883 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/1147 , H01L2224/13099 , H01L2224/141 , H01L2224/16145 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01056 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1532 , H05K3/3436 , H05K3/3452 , H05K2201/0266 , H05K2201/10477 , H05K2201/10674 , H05K2201/10734 , H05K2203/043 , H05K2203/0568 , H05K2203/0574 , H05K2203/0577 , H05K2203/0769
摘要： The present invention relates to a method for forming bumps on a substrate provided with electrode pads. The method includes providing a mask having openings corresponding to the electrode pads, filling each of the openings with a solder paste, and heat treating the solder paste, wherein the solder paste includes solder powder. Preferably, the solder powder contains no more than 10 wt % of particles whose diameter is greater than the thickness of the mask and no more than 1.5 times this thickness. Preferably, the solder powder contains no more than 10 wt % of particles whose diameter is not less than 40% the diameter of the opening portions, or no less than 30 wt % of particles whose diameter is 40 to 100% the thickness of the mask.
摘要翻译：本发明涉及在设置有电极焊盘的基板上形成凸块的方法。该方法包括提供具有对应于电极焊盘的开口的掩模，用焊膏填充每个开口，以及对焊锡膏进行热处理，其中焊膏包括焊料粉末。优选地，焊料粉末含有不超过10重量％的直径大于掩模厚度且不超过该厚度的1.5倍的颗粒。优选地，焊料粉末含有不超过10重量％的直径不小于开口直径的40％的颗粒，或不小于30重量％的直径为掩模厚度为40至100％的颗粒。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式