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31. 发明授权

US6096160A Helicon wave plasma processing apparatus 失效
标题翻译： Helicon波等离子体处理装置
公开(公告)号：US6096160A
公开(公告)日：2000-08-01
申请号：US840325
申请日：1997-04-16
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/3213 , C23F1/02
CPC分类号： H01J37/321 , C23F4/00 , H01J37/3211 , H01J37/32422 , H01L21/3213 , H01J2237/3345 , H01J2237/3346
摘要： Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method, both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing, especially improved selective anisotropic dry etching at high etch rate.
摘要翻译：处理等离子体中的离子/自由基比例和单原子/多原子自由基比率的控制在衬底材料的电感耦合等离子体和/或螺旋波等离子体处理中提供了改进的处理性能。在使用电感耦合等离子体的等离子体处理方法中，以受控的方式间歇地供给高频天线的高频电流，以控制气体解离的状态，促进多原子团的形成。在采用螺旋波等离子体的等离子体处理方法中，以受控的方式间歇地供给提供给磁场发生器的电流，以促进离子的形成。在优选的方法中，高频电流和磁场发生电流都以受控的方式变化，以提供可变的等离子体组成，即根据需要的富自由基富集的等离子体或离子富集等离子体，用于改进的等离子体处理，特别是改进的选择性以高蚀刻速率进行各向异性干蚀刻。

32. 发明授权

US5968273A Wafer stage for manufacturing a semiconductor device 失效
标题翻译：用于制造半导体器件的晶片级
公开(公告)号：US5968273A
公开(公告)日：1999-10-19
申请号：US910329
申请日：1997-08-13
申请人： Shingo Kadomura , Tomohide Jozaki , Shinsuke Hirano , Kinya Miyashita , Yoshiaki Tatsumi , Seiichirou Miyata
发明人： Shingo Kadomura , Tomohide Jozaki , Shinsuke Hirano , Kinya Miyashita , Yoshiaki Tatsumi , Seiichirou Miyata
IPC分类号： C23C16/44 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/458 , H01L21/00 , H01L21/683 , C23C16/00
CPC分类号： C23C16/14 , C23C16/34 , C23C16/401 , C23C16/4586 , H01L21/67109 , H01L21/6831
摘要： Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater. The temperature adjusting jacket is made from a composite aluminum based material prepared by treatment of aluminum or an aluminum alloy with inorganic fibers under a high pressure, and includes a temperature adjusting means.
摘要翻译：公开了一种使用改进的静电吸附技术，在升高的温度可控性的高温下，特别是在400℃以上的加热条件下进行等离子体处理的晶片台。晶片台包括设置在所述静电卡盘下方的静电卡盘和温度调节套管。静电卡盘包括：由绝缘材料制成的电介质构件; 由钎焊层形成的电极，其设置在所述电介质构件的下侧，用于固定所述电介质构件; 设置在所述电极的下侧的氮化铝板，所述电介质构件通过所述电极固定到所述电极上; 加热器，设置在所述氮化铝板的下侧，用于加热所述电介质构件; 以及金属板，其设置在所述氮化铝板的下侧，并且还至少在所述加热器的顶部或底部。温度调节外套由通过在高压下用无机纤维处理铝或铝合金制备的复合铝基材料制成，并且包括温度调节装置。

33. 发明授权

US5738752A System and method for plasma etching 失效
标题翻译：等离子体蚀刻的系统和方法
公开(公告)号：US5738752A
公开(公告)日：1998-04-14
申请号：US673048
申请日：1996-07-01
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/3266 , H01L21/3065 , Y10S156/914
摘要： A plasma etching system capable of preventing ion incident image and satisfying a high anisotropy and a high etching rate and a method using the same. A stage contains a high permeability material layer and it has a potential directly dropped to ground level, and magnetic lines of a magnetic field diffused from a plasma generation source are rendered incident on the stage in the direction substantially perpendicular thereto. This allows negative ions as well as positive ions in plasma to be incident on a substrate to be etched in the direction perpendicular thereto along the magnetic lines. As a result, since acceleration of ions by a sheath is not used it is possible to effectively prevent damage of the substrate.
摘要翻译：一种能够防止离子入射图像并且满足高各向异性和高蚀刻速率的等离子体蚀刻系统及其使用方法。舞台包含高磁导率材料层，并且其具有直接落到地平面的电位，并且从等离子体发生源扩散的磁场的磁力线沿与其大致垂直的方向入射在舞台上。这允许等离子体中的负离子以及正离子沿着与磁性线垂直的方向入射到待蚀刻的基板上。结果，由于不使用护套加速离子，因此能够有效地防止基板的损伤。

34. 发明授权

US5662819A Plasma processing method with controlled ion/radical ratio 失效
标题翻译：具有受控离子/自由基比的等离子体处理方法
公开(公告)号：US5662819A
公开(公告)日：1997-09-02
申请号：US383227
申请日：1995-02-03
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/3213 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/00
CPC分类号： H01J37/321 , C23F4/00 , H01J37/3211 , H01J37/32422 , H01L21/3213 , H01J2237/3345 , H01J2237/3346
摘要： Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing especially improved selective anisotropic dry etching at high etch rate.
摘要翻译：处理等离子体中的离子/自由基比例和单原子/多原子自由基比率的控制在衬底材料的电感耦合等离子体和/或螺旋波等离子体处理中提供了改进的处理性能。在使用电感耦合等离子体的等离子体处理方法中，以受控的方式间歇地供给高频天线的高频电流，以控制气体解离的状态，促进多原子团的形成。在采用螺旋波等离子体的等离子体处理方法中，以受控的方式间歇地供给提供给磁场发生器的电流，以促进离子的形成。在优选的方法中，高频电流和磁场发生电流以受控的方式变化，以提供可变的等离子体组成，即根据需要的富自由基富集等离子体或富离子的等离子体，用于改进的等离子体处理，特别是改进的选择性各向异性干燥以高蚀刻速率蚀刻。

35. 发明授权

US5397431A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5397431A
公开(公告)日：1995-03-14
申请号：US94892
申请日：1993-07-22
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/31116
摘要： A dry etching method for etching an SiO.sub.2 interlayer insulation film 4 formed on an Si.sub.2 N.sub.4 underlying film 3 using an S.sub.2 F.sub.2 /N.sub.2 mixed gas. While the etching proceeds by way of F* and SF.sub.x.sup.+ yielded from S.sub.2 F.sub.2, atoms yielded similarly from S.sub.2 F.sub.2 and N atoms yielded from N.sub.2 are combined with each other, thus yielding sulfur nitride based compounds such as polythiazyl (SN).sub.x to be deposited on pattern sidewall surfaces. When the Si.sub.3 N.sub.4 underlying film 3 is exposed, N atoms in the film and S atoms in a plasma are combined to form (SN).sub.x. These (SN).sub.x in a gaseous phase and on solid surface protect wafer surfaces, improving selectivity. It is also possible to etch the SiO.sub.2 interlayer insulation film with an Si.sub.3 N.sub.4 mask, achieving high selectivity to the mask.
摘要翻译：使用S2F2 / N2混合气体蚀刻在Si 2 N 4基底膜3上形成的SiO 2层间绝缘膜4的干式蚀刻方法。虽然蚀刻通过从S2F2产生的F *和SF x +进行，但是从S2F2产生的原子类似地由N 2产生的N原子彼此组合，从而产生硫化氮基化合物，例如聚噻吩（SN）x，沉积在图案侧壁表面。当暴露Si 3 N 4底层膜3时，膜中的N原子和等离子体中的S原子组合形成（SN）x。这些（SN）x在气相和固体表面上保护了晶片表面，提高了选择性。也可以用Si 3 N 4掩模蚀刻SiO 2层间绝缘膜，实现对掩模的高选择性。

36. 发明授权

US5391244A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5391244A
公开(公告)日：1995-02-21
申请号：US13325
申请日：1993-02-04
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： H01L21/28 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/32137 , H01L21/32139
摘要： A dry etching method for performing one-stage anisotropic etching of a W-polycide film without using a CFC (chlorofluorocarbon) gas is disclosed. The W-polycide film on a substrate is etched by using sulfur halide such as S.sub.2 Cl.sub.2 and S.sub.2 Br.sub.2 for an etching gas while heating the substrate within a temperature range of up to 90.degree. C. Free S released from the sulfur halide is deposited on the substrate within the temperature range, thereby contributing to improvement of selectivity and anisotropy, and Cl.sup.* and Br.sup.* become etchants. Although WCl.sub.x and WBr.sub.x, which are etching reaction products, have low vapor pressure at a normal temperature and under normal pressure, WCl.sub.x and WBr.sub.x may be eliminated sufficiently under reduced pressure and heated conditions. Since F.sup.* is not formed in a plasma, no undercut is generated on an underlying polysilicon layer. Also, since C does not exist, particle pollution can be prevented and selectivity for a gate oxide film can be improved. If a nitrogen based compound, such as N.sub.2, is added to the sulfur halide, deposition of sulfur nitride based compounds can be expected, and the wafer heating temperature can be raised up to 130.degree. C.
摘要翻译：公开了一种用于不使用CFC（氯氟烃）气体进行W-polycide膜的一级各向异性蚀刻的干蚀刻方法。通过使用硫化氢如S2Cl 2和S2Br 2蚀刻衬底上的W-多半导体膜用于蚀刻气体，同时在高达90℃的温度范围内加热衬底。从卤化硫释放的游离S沉积在衬底上在该温度范围内，从而有助于提高选择性和各向异性，Cl *和Br *成为蚀刻剂。虽然作为蚀刻反应产物的WClx和WBrx在常温和常压下具有低蒸气压，但是在减压和加热条件下可以充分消除WClx和WBrx。由于在等离子体中不形成F *，所以在下面的多晶硅层上不产生底切。此外，由于C不存在，可以防止颗粒污染，并且可以提高对栅极氧化膜的选择性。如果将氮等化合物（如N 2）加入到硫卤化物中，则可以预期硫化氮基化合物的沉积，晶片加热温度可升至130℃。

37. 发明授权

US5370769A Dry etching method of GaAs 失效
标题翻译： GaAs的干蚀刻方法
公开(公告)号：US5370769A
公开(公告)日：1994-12-06
申请号：US966531
申请日：1992-10-26
申请人： Shingo Kadomura , Junichi Sato
发明人： Shingo Kadomura , Junichi Sato
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/338 , H01L29/778 , H01L29/812 , H01L21/00
CPC分类号： H01L21/30621
摘要： A method of dry etching a GaAs/AlGaAs stacked system with high selectivity without employing a chlorofluorocarbon (CFC) gas. When selectively etching an n.sup.+ -GaAs layer stacked on an n.sup.+ -AlGaAs layer for forming e.g. a gate recess of a high electron mobility transistor (HEMT), a gas having a composition capable of yielding free sulfur (S) and fluorine radicals (F*) in a plasma under conditions of discharge dissociation is used as an etching gas. S is deposited on a pattern sidewall to form a sidewall protection film to contribute to anisotropic etching. On the other hand, F* plays the role of formation of AlF.sub.x with low vapor pressure on an exposed surface of the underlayer of n.sup.+ -AlGaAs to stop etching, to say nothing of a role of an etchant. Although a gas system which is by far the simplest is a mixed system of S.sub.2 F.sub.2 /Xe, a gas system may be employed which is capable of generating Cl* or Br* for producing a reaction product having a high vapor pressure or augmenting S deposition. More concretely, mixed systems of S.sub.2 F.sub.2 /Cl.sub.2, S.sub.2 F.sub.2 /S.sub.2 Cl.sub.2 or S.sub.2 Cl.sub.2 /ClF.sub.3 may be employed.
摘要翻译：在不使用氯氟烃（CFC）气体的情况下，以高选择性干法蚀刻GaAs / AlGaAs堆叠体系的方法。当选择性地蚀刻层叠在n + -AlGaAs层上的n + -GaAs层以形成例如作为蚀刻气体，使用高电子迁移率晶体管（HEMT）的栅极凹部，在放电解离的条件下，能够在等离子体中产生游离硫（S）和氟自由基（F *）的组成的气体。 S沉积在图案侧壁上以形成侧壁保护膜以有助于各向异性蚀刻。另一方面，F *在n + -AlGaAs的底层的露出表面上起到形成低蒸气压的AlFx的作用，以停止蚀刻，而不考虑蚀刻剂的作用。尽管迄今为止最简单的气体系统是S2F2 / Xe的混合系统，但是可以使用能够产生Cl *或Br *以产生具有高蒸气压或增加S沉积的反应产物的气体系统。更具体地，可以使用S2F2 / Cl2，S2F2 / S2Cl2或S2Cl2 / ClF3的混合体系。

38. 发明授权

US5354421A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5354421A
公开(公告)日：1994-10-11
申请号：US824130
申请日：1992-01-22
申请人： Tetsuya Tatsumi , Shingo Kadomura , Tetsuji Nagayama
发明人： Tetsuya Tatsumi , Shingo Kadomura , Tetsuji Nagayama
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/32137 , H01L21/3065
摘要： A dry etching method for performing anisotropic etching of a layer of a silicon based material without using a chlorofluorocarbon gas, is proposed. Sulfur halides yielding free sulfur (S) into a plasma under conditions of dissociation by electrical discharge, such as S.sub.2 F.sub.2 or S.sub.2 Cl.sub.2, are used as main components of the etching gas. This S is used for sidewall protection and for improving selectivity during etching, and is removed by sublimation by heating the wafer after etching. Although etching may be achieved by S.sub.2 F.sub.2 alone, suitable measures may preferably be used to increase the S/X ratio of an etching reaction system, which is a ratio of the number of atoms of S to that of X or a halogen, because the layer of the silicon based material is highly susceptible to halogen radicals. Specifically, optimum results may be obtained by (a) adding H.sub.2, H.sub.2 S or SiH.sub.4 to the etching gas, (b) introducing hydrogen in advance into an area for etching by ion implantation, (c) using a silicon-containing resist mask, or (d) by coating the surface of a wafer cover with an amorphous silicon layer.
摘要翻译：提出了不使用氯氟烃气体进行硅基材料层的各向异性蚀刻的干式蚀刻方法。作为蚀刻气体的主要成分，使用通过放电解离的条件（如S2F2或S2Cl2）在游离硫（S）中产生游离硫（S）的硫化物。该S用于侧壁保护和用于在蚀刻期间提高选择性，并且通过在蚀刻之后加热晶片而通过升华除去。虽然可以仅通过S2F2实现蚀刻，但是优选地可以采用适当的措施来提高蚀刻反应体系的S / X比，其是S的原子数与X或卤素的原子数之比，因为层的硅基材料对卤素自由基非常敏感。具体地，可以通过（a）向蚀刻气体中添加H2，H2S或SiH4，（b）预先将氢引入到通过离子注入蚀刻的区域中，（c）使用含硅抗蚀剂掩模或（d）通过用非晶硅层涂覆晶片盖的表面。

39. 发明授权

US5326431A Dry etching method utilizing (SN).sub.x polymer mask 失效
标题翻译：使用（SN）x聚合物掩模的干蚀刻方法
公开(公告)号：US5326431A
公开(公告)日：1994-07-05
申请号：US893059
申请日：1992-06-03
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： C23F4/00 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/0276 , H01L21/3081 , H01L21/32139
摘要： A dry etching method using no organic resist mask without involving an increase in the number of necessary processes or wafer surface steps. Conventionally, a nitrogen based compound film is formed as a thin anti-reflection film on a gate electrode or aluminum (Al) metallization layer. The nitrogen based compound film thus formed can be used as an etching mask for the material layer by using etching gas capable of forming sulfur (S) in a plasma when dissociated by electric discharges. For instance, a W polycide film masked by a TiON anti-reflection film patterned into a predetermined shape can be etched by S.sub.2 F.sub.2 /H.sub.2 mixed gas. In this case, a nitrogen (N) dangling bond formed on the surface of the TiON anti-reflection film combines with sulfur supplied by S.sub.2 F.sub.2 to form a polythiazyl (SN).sub.x coating, which provides the resulting TiON anti-reflection film pattern with a sufficient etching resistance to act as an etching mask. This etching process emits no carbon to the etching system, thus improving selectivity for a SiO.sub.2 based material layer. The TiON anti-reflection film pattern can also be used as an etching mask for an aluminum metallization layer with a view to reducing after-corrosion.
摘要翻译：不使用有机抗蚀剂掩模的干蚀刻方法，而不涉及增加所需工艺或晶片表面步骤的数量。通常，在栅电极或铝（Al）金属化层上形成作为薄的抗反射膜的氮基化合物膜。这样形成的氮系化合物膜可以通过使用通过放电解离而能够在等离子体中形成硫（S）的蚀刻气体作为材料层的蚀刻掩模。例如，可以通过S2F2 / H2混合气体蚀刻被图案化为规定形状的TiON抗反射膜掩蔽的W型多膜化膜。在这种情况下，形成在TiON防反射膜表面上的氮（N）悬挂键与由S2F2供给的硫结合形成聚噻吩（SN）×涂层，其提供所得到的TiON抗反射膜图案，足够的耐蚀刻性能用作蚀刻掩模。该蚀刻工艺对蚀刻系统不产生碳，从而提高对SiO 2基材料层的选择性。为了减少后腐蚀，TiON抗反射膜图案也可以用作铝金属化层的蚀刻掩模。

40. 发明授权

US5281304A Process for forming copper wiring 失效
标题翻译：铜线布线工艺
公开(公告)号：US5281304A
公开(公告)日：1994-01-25
申请号：US891220
申请日：1992-05-29
申请人： Shingo Kadomura
发明人： Shingo Kadomura
IPC分类号： H01L21/203 , C23C8/06 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/768 , H01L23/52 , B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： C23F4/00 , C23C8/06 , H01L21/76838
摘要： A process for forming a copper wiring is composed of modifying a surface of a copper film to copper sulfide, forming the wiring pattern by etching to define a desired design of the wiring, reducing copper sulfide film to copper, and applying an insulation film to the surroundings of the wiring pattern of copper. Successively forming of the wiring is done by processing in a multichamber equipment having functions of the above.
摘要翻译：一种形成铜布线的方法是将铜膜的表面改性为硫化铜，通过蚀刻形成布线图案以限定布线的所需设计，将铜硫化物膜还原成铜，并将绝缘膜施加到铜的布线图案周围。通过在具有上述功能的多室设备中进行处理，可以连续地形成布线。

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