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    • 35. 发明授权
    • Bladder stopper and control assembly
    • 膀胱塞和控制组件
    • US06973685B2
    • 2005-12-13
    • US10106304
    • 2002-03-25
    • Scott Duncan
    • Scott Duncan
    • E03C1/23F16K31/126F16K31/62
    • E03C1/23E03C2001/2313F16K31/126F16K31/62
    • An assembly for selectively blocking a drain to the passage of water. A drain emanating from a substantially circular opening in a basin, sink or tub is provided with a substantially cylindrical member releasably connected to the basin, sink or tub. The substantially cylindrical member is provided with a fluid inlet for receiving a pressurized fluid and an expandable bladder located within the substantially cylindrical member in fluid communication with the fluid inlet, wherein the bladder is sized and positioned such that when expanded, it blocks the drain to the passage of water. A mechanical pump is provided having a pump chamber and a stem emanating from it such that when the stem is moved, fluid pressure is applied to a hydraulic line connected to the fluid inlet for selectively expanding the bladder.
    • 用于选择性地将排水口堵塞到水通道的组件。 从盆,槽或槽中的基本上圆形的开口排出的排水管设置有可释放地连接到盆,槽或桶的大致圆筒形构件。 基本上圆柱形的构件设置有用于接收加压流体的流体入口和位于基本上圆柱形构件内的可膨胀气囊,其与流体入口流体连通,其中气囊的尺寸和位置使得当膨胀时, 水的通过。 提供了一种机械泵,其具有泵室和从其发出的阀杆,使得当阀杆移动时,流体压力被施加到连接到流体入口的液压管路,以选择性地膨胀气囊。
    • 36. 发明申请
    • Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
    • 采用至少一个调制掺杂量子阱结构和一个或多个蚀刻停止层的半导体器件用于精确的接触形成
    • US20050145882A1
    • 2005-07-07
    • US11044636
    • 2005-01-10
    • Geoff TaylorScott Duncan
    • Geoff TaylorScott Duncan
    • H01L21/331H01L21/335H01L29/15H01L29/737H01L29/80H03K17/79H03M1/66H03M1/74H03M1/80H01L29/06
    • H01L29/66318H01L29/155H01L29/66462H01L29/7371H01L29/802H03K17/79H03M1/667H03M1/74H03M1/808
    • A semiconductor device includes a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used to form contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well structure. Thin capping layers are also provided to protect certain layers from oxidation. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). In another aspect of the present invention, a high performance bipolar transistor device is realized from this structure by implanting p-type ions in a interdigitization pattern that forms a plurality of p-type ion implant regions on both sides of the p-type modulation doped quantum well structure to a depth that penetrates the n-type ohmic contact layer. The interdigitization pattern of the p-type implants reduces capacitance between the p-type modulation doped quantum well structure and the n-type ohmic contact layer to enable higher frequency operation.
    • 半导体器件包括在衬底上形成的一系列层,所述层包括包括n型欧姆接触层,p型调制掺杂量子阱结构,n型调制掺杂量子阱结构的第一多个层, 以及包括p型欧姆接触层的第四多个层。 蚀刻停止层用于形成与n型欧姆接触层的接触并与n型调制掺杂量子阱结构接触。 还提供薄盖层以保护某些层免于氧化。 优选地,每个这样的蚀刻停止层被制成足够薄以允许在从该结构实现的光电子/电子器件的操作期间电流隧穿(包括异质结晶闸管器件,n沟道HFET器件,p沟道HFET器件,p型量子阱器件, 基极双极晶体管器件和n型量子阱基双极晶体管器件)。 在本发明的另一方面,通过将p型离子注入到在p型调制掺杂的两侧上形成多个p型离子注入区的叉指形式中,从该结构实现了高性能双极晶体管器件 量子阱结构到穿透n型欧姆接触层的深度。 p型植入物的叉​​指形式降低p型调制掺杂量子阱结构和n型欧姆接触层之间的电容,以实现更高频率的操作。