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    • 34. 发明授权
    • Image forming apparatus
    • 图像形成装置
    • US07469891B2
    • 2008-12-30
    • US11582176
    • 2006-10-17
    • Satoru Takahashi
    • Satoru Takahashi
    • B65H1/00
    • B65H1/266B65H2402/45B65H2405/1124B65H2405/115B65H2405/31B65H2601/521
    • Disclosed is an image forming apparatus, which comprises a sheet feed cassette adapted to be insertingly mounted in a sheet feed section of an apparatus body in such a manner that it can be pulled out frontward, a cover member attached to an upper edge of an opening which is formed in a rear portion of the apparatus body to allow a rear portion of the sheet feed cassette mounted in the sheet feed section to protrude rearward therefrom, and adapted such that, when the rear portion of the sheet feed cassette is located to protrude from the opening, it covers an upper surface of the protruded rear portion of the sheet feed cassette, and a noise absorbing material attached onto a surface of the cover member adapted to be located in opposed relation to the sheet feed cassette.
    • 公开了一种图像形成装置,其包括:片材进给盒,其适于插入地装配在装置主体的片材进给部分中,使得其可以向前拉出;盖件,附接到开口的上边缘 其形成在装置主体的后部,以使得安装在供纸部分中的供纸盒的后部从其向后突出,并且适于使得当供纸盒的后部位于突出部 从该开口开始,其覆盖片材进给盒的突出后部的上表面,以及附着在盖构件的表面上的噪声吸收材料,其适于与片材进给盒相对置。
    • 37. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US07050779B2
    • 2006-05-23
    • US10401597
    • 2003-03-31
    • Ikuya OnoKazuhiro TagawaSatoru Takahashi
    • Ikuya OnoKazuhiro TagawaSatoru Takahashi
    • H04B1/28H04B1/26
    • H01L27/0207H03D7/1433H03D2200/0025H03D2200/0047H04B1/40
    • The thermal interference due to the self heating of transistors constituting a gilbert cell circuit is reduced, thereby largely improving the receiving sensitivity to signals. A mixer circuit composed of a gilbert cell circuit comprises transistors T1 to T6. Each of the transistors T1 to T4 is con figured so that four transistors may be connected in parallel. In a layout on a semiconductor chip, four transistors T1a to T1d and T2a to T2d respectively constituting the transistors T1 and T2 are respectively separated into two pairs, and the respective two pairs are laid out in a crisscross shape so that they are crossed with each other. Similarly, four transistors T3a to T3d and T4a to T4d respectively constituting the transistors T3 and T4 are respectively separated into two pairs, and the respective two pairs are laid out in a crisscross shape so that they are crossed with each other. Thus, the thermal influence applied on the transistors T1 to T4 is uniformed.
    • 由于构成吉尔伯特单元电路的晶体管的自发热引起的热干扰降低,从而大大提高了对信号的接收灵敏度。 由吉尔伯特单元电路组成的混频器电路包括晶体管T 1至T 6。 晶体管T 1至T 4中的每一个被配置为使得四个晶体管可以并联连接。 在半导体芯片上的布局中,分别构成晶体管T 1和T 2的四个晶体管T 1 a至T 1 d和T 2 a至T 2 d分别分成两对,并将相应的两对布置在 十字形,使得它们彼此交叉。 类似地,分别构成晶体管T 3和T 4的四个晶体管T 3 a至T 3 d和T 4a至T 4 d分别分成两对,并且相应的两对被布置成十字形,使得它们 相互交叉。 因此,施加在晶体管T 1至T 4上的热影响是均匀的。