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31. 发明申请

US20110175107A1 SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：碳化硅基板
公开(公告)号：US20110175107A1
公开(公告)日：2011-07-21
申请号：US13005714
申请日：2011-01-13
申请人： Taro NISHIGUCHI , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro NISHIGUCHI , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L29/16
CPC分类号： H01L21/02378 , H01L21/02002 , H01L21/02529 , H01L21/02667 , H01L21/30625 , H01L29/1608
摘要： A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity.
摘要翻译：基部由碳化硅制成并具有主表面。至少一个碳化硅层以沿着主表面的外边缘露出主表面的区域的方式设置在基部的主表面上。沿着主表面的外缘在基部的主表面的该区域上设置至少一个保护层。因此，可以以高的面内均匀性抛光碳化硅衬底。

32. 发明申请

US20110127585A1 LATERAL JUNCTION FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：横向连接场效应晶体管
公开(公告)号：US20110127585A1
公开(公告)日：2011-06-02
申请号：US13056071
申请日：2010-03-26
申请人： Kazuhiro Fujikawa , Shin Harada , Yasuo Namikawa
发明人： Kazuhiro Fujikawa , Shin Harada , Yasuo Namikawa
IPC分类号： H01L29/80
CPC分类号： H01L29/808 , H01L29/063 , H01L29/1066 , H01L29/1608 , H01L29/66068
摘要： A lateral junction field-effect transistor capable of preventing the occurrence of leakage current and realizing a sufficient withstand voltage can be provided. In a lateral JFET according to the present invention, a buffer layer is located on a main surface of a SiC substrate and includes a p-type impurity. A channel layer is located on the buffer layer and includes an n-type impurity having a higher concentration than the concentration of the p-type impurity in the buffer layer. A source region and a drain region are of n-type and formed to be spaced from each other in a surface layer of the channel layer, and a p-type gate region is located in the surface layer of the channel layer and between the source region and the drain region. A barrier region is located in an interface region between the channel layer and the buffer layer and in a region located under the gate region and includes a p-type impurity having a higher concentration than the concentration of the p-type impurity in the buffer layer.
摘要翻译：可以提供能够防止发生漏电流并实现足够的耐压的横向结型场效应晶体管。在根据本发明的横向JFET中，缓冲层位于SiC衬底的主表面上并且包括p型杂质。沟道层位于缓冲层上，并且包括具有比缓冲层中的p型杂质浓度高的浓度的n型杂质。源极区域和漏极区域是n型并且在沟道层的表面层中形成为彼此间隔开，并且p型栅极区域位于沟道层的表面层和源极区域和漏极区域。阻挡区域位于沟道层和缓冲层之间的界面区域中，并位于栅极区域下方的区域中，并且包括具有比缓冲层中的p型杂质浓度高的浓度的p型杂质。

33. 发明授权

US5632811A Method of retaining melt of oxide 失效
标题翻译：保留氧化物熔体的方法
公开(公告)号：US5632811A
公开(公告)日：1997-05-27
申请号：US420519
申请日：1995-04-12
申请人： Yasuo Namikawa , Yasuji Yamada , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka
发明人： Yasuo Namikawa , Yasuji Yamada , Satoshi Koyama , Yuh Shiohara , Shoji Tanaka
IPC分类号： C30B9/00 , C30B15/00 , C30B15/12 , C30B29/22 , H01B13/00 , H01L21/208 , C30B29/16
CPC分类号： C30B29/225 , C30B15/12 , C30B9/00
摘要： In order to stably retain an oxide-based melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen at a prescribed temperature with no impurity contamination thereby preparing a large oxide crystal of high quality from the melt, an oxide melt consisting essentially of yttrium or a lanthanoid element, barium, copper and oxygen is stored in a first crucible, which in turn is held in a second crucible. The first crucible is made of a material which is an oxide of at least one element forming the melt having a melting point higher by at least 10.degree. C. than a melt retention temperature and causing no structural phase transition up to a temperature higher by 10.degree. C. than the aforementioned prescribed temperature, with solubility of not more than 5 atomic percent with respect to the melt in a temperature range from the room temperature to a temperature higher by 10.degree. C. than the melt retention temperature. The second crucible is made of a material substantially causing neither melting nor chemical reaction with respect to the oxide-based melt, which can retain the melt more stably than the first material. Even if the melt overflows the first crucible, this overflow is suppressed by the second crucible. It is possible to prepare a crystal of an oxide superconductor such as YBa.sub.2 Cu.sub.3 O.sub.7-x (0.ltoreq.X.ltoreq.1) by the pulling method from the melt which is stored in the first crucible.
摘要翻译：为了稳定地保持基本上由钇或镧系元素，钡，铜和氧组成的氧化物基熔体，在规定的温度下没有杂质污染，从而从熔体制备高质量的大的氧化物晶体，基本上由的钇或镧系元素，钡，铜和氧储存在第一坩埚中，第一坩埚又保持在第二坩埚中。第一坩埚由至少一种形成熔体的元素的氧化物的材料制成，其熔点比熔融保持温度高至少10℃，并且不会导致结构相变达到高于10℃的温度 ℃以上的规定温度，相对于熔体，在室温至高于熔融保持温度10℃的温度范围内的溶解度为5原子％以下。第二坩埚由相对于基于氧化物的熔体基本上不熔化和化学反应的材料制成，其可以比第一材料更稳定地保持熔体。即使熔体溢出第一坩埚，这种溢流被第二坩埚抑制。可以通过从存储在第一坩埚中的熔体的拉伸方法制备氧化物超导体的晶体，例如YBa2Cu3O7-x（0≤X1）。

34. 发明申请

US20120070605A1 SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：硅碳化硅，碳化硅基材，其制造方法，可制造和半导体基板
公开(公告)号：US20120070605A1
公开(公告)日：2012-03-22
申请号：US13375287
申请日：2010-09-17
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa , Shinsuke Fujiwara
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa , Shinsuke Fujiwara
IPC分类号： B32B7/04 , B28D5/00 , C30B23/02 , C01B31/36 , B32B9/04
CPC分类号： C30B29/36 , C30B23/00 , H01L21/02002 , Y10T428/192
摘要： An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.
摘要翻译： SiC锭包括具有4个侧面的底面; 四个侧面从与底面方向相交的方向从底面延伸; 以及与位于与底面相对的一侧的侧面连接的生长面。底面，侧面和生长面中的至少一个是{0001}面，{1-100}面，{11-20}面，或相对于这些平面倾斜10°以内的平面。

35. 发明申请

US20120068195A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基体和碳化硅基体的方法
公开(公告)号：US20120068195A1
公开(公告)日：2012-03-22
申请号：US13322937
申请日：2010-09-27
申请人： Shin Harada , Makoto Sasaki , Taro Nishiguchi , Hideto Tamaso , Yasuo Namikawa
发明人： Shin Harada , Makoto Sasaki , Taro Nishiguchi , Hideto Tamaso , Yasuo Namikawa
IPC分类号： H01L29/161 , H01L21/762
CPC分类号： H01L29/7802 , C30B29/36 , H01L21/02378 , H01L21/02428 , H01L21/02433 , H01L21/02529 , H01L29/0878 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates.
摘要翻译：一种制造碳化硅基板的方法包括以下步骤：制备由单晶碳化硅制成的多个SiC基板; 形成由碳化硅制成的基层，并保持在俯视时并排设置的多个SiC基板; 以及形成填充所述多个SiC衬底之间的间隙的填充部分。

36. 外观设计

USD655256S1 Semiconductor substrate 有权
公开(公告)号：USD655256S1
公开(公告)日：2012-03-06
申请号：US29379471
申请日：2010-11-19
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Shinsuke Fujiwara , Yasuo Namikawa
设计人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Shinsuke Fujiwara , Yasuo Namikawa

37. 发明申请

US20120032191A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基体和碳化硅基体的方法
公开(公告)号：US20120032191A1
公开(公告)日：2012-02-09
申请号：US13259012
申请日：2010-09-27
申请人： Shin Harada , Makoto Sasaki , Taro Nishiguchi , Hideto Tamaso , Yasuo Namikawa
发明人： Shin Harada , Makoto Sasaki , Taro Nishiguchi , Hideto Tamaso , Yasuo Namikawa
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/24 , C30B23/00 , C30B25/186 , C30B29/36 , H01L21/02378 , H01L21/02428 , H01L21/02433 , H01L21/02529 , H01L21/187 , H01L29/1608 , H01L29/66068 , H01L29/808 , H01L29/872
摘要： A method for manufacturing a silicon carbide substrate (1) having a large diameter provided readily includes the steps of: preparing a plurality of SiC substrates (20) each made of single-crystal silicon carbide; and connecting end surfaces (20B) of the plurality of SiC substrates (20) to one another such that the plurality of SiC substrates (20) are arranged side by side when viewed in a planar view.
摘要翻译：制造具有大直径的碳化硅衬底（1）的方法容易包括以下步骤：制备由单晶碳化硅制成的多个SiC衬底（20）; 并且将所述多个SiC衬底（20）的端面（20B）彼此连接，使得当在平面图中观察时所述多个SiC衬底（20）并排布置。

38. 发明申请

US20120017826A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20120017826A1
公开(公告)日：2012-01-26
申请号：US13258126
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/025 , C30B33/06 , H01L21/02002 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L29/1608
摘要： A supporting portion (30c) made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion (30c) and at least one single crystal substrate (11) made of silicon carbide are stacked such that the backside surface (B1) of each at least one single crystal substrate (11) and the main surface (FO) of the supporting portion (30c) having irregularities formed contact each other. In order to connect the backside surface (B1) of each at least one single crystal substrate (11) to the supporting portion (30c), the supporting portion (30c) and at least one single crystal substrate (11) are heated such that the temperature of the supporting portion (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate (11) is below the temperature of the supporting portion (30c).
摘要翻译：由碳化硅制成的支撑部分（30c）在主表面（FO）的至少一部分处具有凹凸。支撑部（30c）和由碳化硅构成的至少一个单晶基板（11）被层叠，使得每个至少一个单晶基板（11）的背面（B1）和主晶面具有形成彼此接触的凹凸的支撑部（30c）。为了将每个至少一个单晶衬底（11）的背面（B1）连接到支撑部分（30c），支撑部分（30c）和至少一个单晶衬底（11）被加热，使得支撑部分（30c）的温度超过碳化硅的升华温度，并且每个至少一个单晶衬底（11）的温度低于支撑部分（30c）的温度。

39. 发明申请

US20120012862A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造碳化硅基板，碳化硅基板和半导体器件的方法
公开(公告)号：US20120012862A1
公开(公告)日：2012-01-19
申请号：US13258801
申请日：2010-09-29
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Shinsuke Fujiwara , Yasuo Namikawa , Takeyoshi Masuda
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Shinsuke Fujiwara , Yasuo Namikawa , Takeyoshi Masuda
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0475 , H01L21/187 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate.
摘要翻译：制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 并且通过在基底基板和SiC基板之间形成由导电体的碳制成的中间层，将基底基板与SiC基板相互连接。

40. 发明申请

US20110278593A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造碳化硅衬底的方法，制造半导体器件的方法，碳化硅衬底和半导体器件
公开(公告)号：US20110278593A1
公开(公告)日：2011-11-17
申请号：US13104219
申请日：2011-05-10
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： H01L29/12 , C30B23/02 , H01L21/20 , B32B13/04
CPC分类号： H01L29/7802 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L21/0475 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible.
摘要翻译：一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热坩埚中的基底基底而形成与碳化硅基体的主表面接触的碳化硅制成的基底层，使其落入构成基底基板的碳化硅的升华温度以上的温度范围内。在形成基层的步骤中，将含硅的气体引入坩埚中。

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