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31. 发明申请

US20070165338A1 TUNNEL-TYPE MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER 失效
标题翻译：具有层压种子层的隧道式磁性检测装置
公开(公告)号：US20070165338A1
公开(公告)日：2007-07-19
申请号：US11623682
申请日：2007-01-16
申请人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi
发明人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi
IPC分类号： G11B5/33
CPC分类号： G01R33/098 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01L43/10
摘要： A tunnel-type magnetic detecting device is provided. The tunnel-type magnetic detecting device is capable of stably reducing the surface roughness of an insulating barrier layer, and capable of properly improving an MR effect typified by a resistance changing rate. A seed layer is formed in a laminated structure of an NiFeCr layer and an Al layer. This makes it possible to stably reduce the surface roughness of the insulating barrier layer as compared with a related art in which a seed layer is formed in a single-layer structure of an NiFeCr layer. Accordingly, according to the tunnel-type magnetic detecting device of the invention, the MR property typified by an excellent resistance changing rate (ΔR/R) can be obtained stably.
摘要翻译：提供隧道式磁检测装置。隧道式磁检测装置能够稳定地降低绝缘阻挡层的表面粗糙度，能够适当地提高以电阻变化率为代表的MR效应。种子层以NiFeCr层和Al层的层叠结构形成。与使NiFeCr层的单层结构形成种子层的现有技术相比，能够稳定地降低绝缘阻挡层的表面粗糙度。因此，根据本发明的隧道式磁检测装置，可以稳定地获得以优异的电阻变化率（DeltaR / R）为代表的MR特性。

32. 发明申请

US20070127166A1 MAGNETIC DETECTING DEVICE HAVING TWO-LAYERED SEED 审中-公开
标题翻译：具有两层种子的磁性检测装置
公开(公告)号：US20070127166A1
公开(公告)日：2007-06-07
申请号：US11567684
申请日：2006-12-06
申请人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi
发明人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3906
摘要： A magnetic detecting device is disclosed having a fixed magnetic layer, a free magnetic layer, and a nonmagnetic material layer between the fixed magnetic layer and the free magnetic layer. A laminated seed layer having NiFeCr is proximate the fixed magnetic layer. In one version, an antiferromagnetic layer is between the fixed magnetic layer and the laminated seed layer
摘要翻译：公开了一种在固定磁性层和自由磁性层之间具有固定磁性层，自由磁性层和非磁性材料层的磁性检测装置。具有NiFeCr的层压种子层靠近固定磁性层。在一个版本中，反铁磁层位于固定磁性层和层压种子层之间

33. 发明授权

US07106560B2 Magnetic sensor with second antiferromagnetic layer having smaller depth in height direction than free layer 失效
标题翻译：具有第二反铁磁层的磁传感器，其高度方向的深度比自由层的深度要小
公开(公告)号：US07106560B2
公开(公告)日：2006-09-12
申请号：US10619341
申请日：2003-07-14
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , Y10T29/49046
摘要： An end portion of a backfill gap layer is provided on two side portions of a free magnetic layer in a back region, and second antiferromagnetic layers are formed on the two side portions of the free magnetic layer from a face opposing a recording medium to the end portion of the backfill gap layer. Accordingly, in the free magnetic layer in the back region, a bias magnetic field in the magnetic layer is decreased as compared to that in the front region. Hence, a magnetic sensor can be manufactured which can improve the reproduction sensitivity of a central portion of the free magnetic layer to an external magnetic field as compared to that in the past without decreasing the exchange stiffness constant and which can suppress the generation of side reading.
摘要翻译：回填间隙层的端部设置在后区域的自由磁性层的两侧部分上，并且第二反铁磁性层从与记录介质相对的面向末端形成在自由磁性层的两个侧部上回填间隙层的一部分。因此，在背面区域的自由磁性层中，磁性层中的偏磁场与前面区域相比降低。因此，可以制造磁传感器，其可以将自由磁性层的中心部分的再现灵敏度提高到与过去相比较的外部磁场，而不会降低交换刚度常数并且可以抑制侧读取的产生。

34. 发明授权

US07092218B2 Magnetic head comprising magnetic domain control layer formed on ABS-side of magnetic flux guide for GMR element and method of manufacturing the magnetic head 失效
标题翻译：磁头包括形成在用于GMR元件的磁通引导件的ABS侧上的磁畴控制层和制造磁头的方法
公开(公告)号：US07092218B2
公开(公告)日：2006-08-15
申请号：US10464708
申请日：2003-06-17
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3916 , G11B5/3932 , G11B2005/3996 , Y10T29/49048
摘要： The present invention provides a magnetic head including a magnetic flux guide layer for effectively inducing an external magnetic field in a free magnetic layer. A magnetic domain control layer is formed in a space below the magnetic flux guide layer and in front of a multilayer film near a surface facing a recording medium. Therefore, the shape of the magnetic flux guide layer can be made substantially flat to improve flux transmission efficiency. Also, the magnetization of the magnetic flux guide layer is controlled by laminating the magnetic flux guide layer on the magnetic domain control layer. Therefore, the magnetic domain control layer can be formed in a substantially flat thin film to stabilize a bias magnetic field to be supplied to the magnetic flux guide layer. Furthermore, the gap length of the magnetic head can be kept short.
摘要翻译：本发明提供一种磁头，其包括用于有效地感应自由磁性层中的外部磁场的磁通引导层。磁畴控制层形成在磁通导向层下面的空间中，并且在面向记录介质的表面附近的多层膜的前方形成。因此，可以使磁通导向层的形状基本平坦化，以提高磁通传输效率。此外，通过在磁畴控制层上层叠磁通引导层来控制磁通引导层的磁化。因此，磁畴控制层可以形成在基本平坦的薄膜中，以稳定供给到磁通导向层的偏置磁场。此外，磁头的间隙长度可以保持较短。

35. 发明申请

US20060110625A1 Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same 有权
公开(公告)号：US20060110625A1
公开(公告)日：2006-05-25
申请号：US11266956
申请日：2005-10-26
申请人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
发明人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3295 , H01F41/303 , H01L43/08 , Y10T428/1107 , Y10T428/1143 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

36. 发明授权

US07045224B2 Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same 失效
标题翻译：磁性检测元件具有在磁道宽度方向上具有预定空间的反铁磁膜及其制造方法
公开(公告)号：US07045224B2
公开(公告)日：2006-05-16
申请号：US10675435
申请日：2003-09-30
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193
摘要： The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized. Furthermore, a magnetic detecting element with high resistance to electrostatic damage (ESD) can be manufactured. Thus, a magnetic detecting element adaptable for a future higher recording density can be provided.
摘要翻译：本发明提供了一种磁检测元件，其包括钉扎磁性层和构成交换耦合膜的第一反铁磁层，其结构被优化以适当地钉扎钉扎磁性层的磁化，提高再生产量并适当地符合较窄的间隙，以及制造磁检测元件的方法。钉扎磁性层具有合成亚铁磁性结构，第一反铁磁性层具有形成在轨道宽度方向中心的预定空间C，仅在第一反铁磁性层与第一磁性层的两侧部之间产生交换耦合磁场的固定磁性层。因此，可以使被钉扎的磁性层的磁化被固定，并且可以实现再现输出和间隙变窄的改善。此外，可以制造具有高抗静电损伤（ESD）的磁性检测元件。因此，可以提供适用于将来更高记录密度的磁检测元件。

37. 发明授权

US07029771B2 Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy 失效
标题翻译：具有自由层的磁传感器通过形状各向异性另外具有磁各向异性
公开(公告)号：US07029771B2
公开(公告)日：2006-04-18
申请号：US10671970
申请日：2003-09-26
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B32B3/02 , B32B15/04 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/123 , H01F10/3268 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1193
摘要： An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.
摘要翻译：在轨道宽度方向上的元件的中央部形成中间区域，在中间区域不设置反铁磁层。因此，可以防止感测电流被分流到中间区域，结果，可以实现再现输出的提高和抗静电损伤的强度。此外，由于元件的中心部分的厚度减小，可以实现更窄的间隙的趋势。此外，由于自由磁性层的磁化方向通过形状各向异性在磁道宽度方向上取向，因此不需要用于定向磁化的装置，因此可以简化元件的结构和制造方法。

38. 发明授权

US07002782B2 Magnetic sensing element biased by two antiferromagnetic layers above free magnetic layer and two hard bias layers at two sides of the free magnetic layer, and method for making the same 失效
标题翻译：由自由磁性层上方的两个反铁磁层和自由磁性层两侧的两个硬偏置层偏置的磁感应元件及其制造方法
公开(公告)号：US07002782B2
公开(公告)日：2006-02-21
申请号：US10437219
申请日：2003-05-13
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensing element comprising a stably magnetized free magnetic layer is provided. Hard bias layers are disposed at the two sides of the free magnetic layer, and a third antiferromagnetic layer is disposed on the free magnetic layer. Side regions of the free magnetic layer extending beyond the track width are overlaid by second antiferromagnetic layers with the third antiferromagnetic layer therebetween. The magnetization directions of the side regions of the free magnetic layer are pinned in the track width direction by a synergetic effect of the exchange coupling magnetic fields generated between the side regions of the free magnetic layer and the third antiferromagnetic layer and the longitudinal bias magnetic fields from the hard bias layers.
摘要翻译：提供了包括稳定磁化的自由磁性层的磁感应元件。硬偏置层设置在自由磁性层的两侧，第三反铁磁层设置在自由磁性层上。延伸超过轨道宽度的自由磁性层的侧面区域被第二反铁磁层覆盖，其间具有第三反铁磁性层。自由磁性层的侧面区域的磁化方向通过在自由磁性层和第三反铁磁性层的侧面区域和纵向偏置磁场之间产生的交换耦合磁场的协同作用而在磁道宽度方向上被钉扎从硬偏压层。

39. 发明申请

US20060028775A1 Magnetic detecting element provided with free layer having layered-ferri configuration 有权
标题翻译：磁性检测元件设置有具有层状结构的自由层
公开(公告)号：US20060028775A1
公开(公告)日：2006-02-09
申请号：US11194090
申请日：2005-07-28
申请人： Tomohiro Yamashita , Naoya Hasegawa , Eiji Umetsu , Ryo Nakabayashi , Akira Takahashi
发明人： Tomohiro Yamashita , Naoya Hasegawa , Eiji Umetsu , Ryo Nakabayashi , Akira Takahashi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3945
摘要： A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.
摘要翻译：即使磁性层的磁化方向为180°，也能够抑制输出不对称的变化的磁性检测元件。第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度，并且当施加到第一自由磁性层时，施加到第二自由磁性层的扭矩偏移到第一自由磁性层发生电流磁场。因此，可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时，也保持自由磁性层和被钉扎磁性层之间的正交状态，并且适当地保持输出不对称性。

40. 发明申请

US20050276997A1 Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same 失效
标题翻译：磁性检测元件具有在磁道宽度方向上具有预定空间的反铁磁膜及其制造方法
公开(公告)号：US20050276997A1
公开(公告)日：2005-12-15
申请号：US10675435
申请日：2003-09-30
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
IPC分类号： G11B5/39 , G01R33/09 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10 , H01L43/12 , B32B9/00
CPC分类号： B82Y25/00 , G01R33/093 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1157 , Y10T428/1171 , Y10T428/1193
摘要： The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized. Furthermore, a magnetic detecting element with high resistance to electrostatic damage (ESD) can be manufactured. Thus, a magnetic detecting element adaptable for a future higher recording density can be provided.
摘要翻译：本发明提供了一种磁检测元件，其包括钉扎磁性层和构成交换耦合膜的第一反铁磁层，其结构被优化以适当地钉扎钉扎磁性层的磁化，提高再生产量并适当地符合较窄的间隙，以及制造磁检测元件的方法。钉扎磁性层具有合成亚铁磁性结构，第一反铁磁性层具有形成在轨道宽度方向中心的预定空间C，仅在第一反铁磁性层与第一磁性层的两侧部之间产生交换耦合磁场的固定磁性层。因此，可以使被钉扎的磁性层的磁化被固定，并且可以实现再现输出和间隙变窄的改善。此外，可以制造具有高抗静电损伤（ESD）的磁性检测元件。因此，可以提供适用于将来更高记录密度的磁检测元件。

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