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    • 31. 发明授权
    • On-chip samplers for asynchronously triggered events
    • 用于异步触发事件的片上采样器
    • US07694203B2
    • 2010-04-06
    • US11773020
    • 2007-07-03
    • Frankie Y. LiuRonald HoRobert J. Drost
    • Frankie Y. LiuRonald HoRobert J. Drost
    • G01R31/28
    • G01R31/31705G01R19/0053G01R31/2884
    • Embodiments of an integrated circuit that includes a debug circuit are described. This debug circuit is configured to test an asynchronous circuit by performing analog measurements on asynchronous signals associated with the asynchronous circuit, and includes a triggering module configured to gate the debug circuit based on one or more of the asynchronous signals. This triggering module has a continuous mode of operation and a single-shot mode of operation. A timing module within the debug circuit has a timing range exceeding a pre-determined value, and is configured to provide signals corresponding to a first time base or signals corresponding to a second time base. Furthermore, control logic within the debug circuit is configured to select a mode of operation and a given time base for the debug circuit, which is either the first time base or the second time base.
    • 描述包括调试电路的集成电路的实施例。 该调试电路被配置为通过对与异步电路相关联的异步信号执行模拟测量来测试异步电路,并且包括被配置为基于一个或多个异步信号门控调试电路的触发模块。 该触发模块具有连续的操作模式和单次操作模式。 调试电路内的定时模块具有超过预定值的定时范围,并且被配置为提供对应于第一时基的信号或对应于第二时基的信号。 此外,调试电路内的控制逻辑被配置为选择作为第一时基或第二时基的调试电路的操作模式和给定时基。
    • 33. 发明申请
    • Circuit that facilitates proximity communication
    • 促进接近通信的电路
    • US20090189674A1
    • 2009-07-30
    • US12215943
    • 2008-06-30
    • Alex ChowRobert J. DrostRonald HoRobert ProebstingArlene Proebsting
    • Alex ChowRobert J. DrostRonald HoRobert ProebstingArlene Proebsting
    • H03K17/16
    • H01L23/48H01L2225/06527H01L2924/0002H01L2924/00
    • One embodiment of the present invention provides a system that facilitates proximity communication. This system includes a circuit containing a bootstrap transistor and a pass-gate transistor, where the drain of the bootstrap transistor is coupled to the gate of the pass-gate transistor. Note that a first coupling capacitance exists between the source of the pass-gate transistor and the drain of the bootstrap transistor and a second coupling capacitance exists between the drain of the pass-gate transistor and the drain of the bootstrap transistor. During operation, the gate and the source of the bootstrap transistor are coupled to a high voltage, thereby causing an intermediate voltage at the drain of the bootstrap transistor. When the source of the pass-gate transistor transitions to a high voltage, the first coupling capacitance and the second coupling capacitance boost the voltage at the gate of the pass-gate transistor higher than the high voltage, thereby enabling the high voltage at the source of the pass-gate transistor to pass to the drain of the pass-gate transistor.
    • 本发明的一个实施例提供一种便于邻近通信的系统。 该系统包括包含自举晶体管和通过栅极晶体管的电路,其中自举晶体管的漏极耦合到栅极 - 栅极晶体管的栅极。 注意,在栅极晶体管的源极和自举晶体管的漏极之间存在第一耦合电容,并且在通过栅极晶体管的漏极和自举晶体管的漏极之间存在第二耦合电容。 在操作期间,自举晶体管的栅极和源极耦合到高电压,从而在自举晶体管的漏极处产生中间电压。 当栅极晶体管的源极转换到高电压时,第一耦合电容和第二耦合电容使得栅极晶体管的栅极处的电压升高到高于高电压,从而使源极处的高电压 的栅极晶体管传递到栅极晶体管的漏极。
    • 36. 发明授权
    • Enhanced electrically-aligned proximity communication
    • 增强的电对齐邻近通信
    • US07200830B2
    • 2007-04-03
    • US10879607
    • 2004-06-28
    • Robert J. DrostIvan E. SutherlandRonald Ho
    • Robert J. DrostIvan E. SutherlandRonald Ho
    • G06F17/50
    • H01L23/48H01L25/0657H01L2225/06531H01L2924/0002H01L2924/00
    • One embodiment of the present invention provides a system that facilitates capacitive inter-chip communication. During operation, the system first determines an alignment between a first semiconductor die and a second semiconductor die. Next, electrical signals are selectively routed to at least one interconnect pad in a plurality of interconnect pads based on the alignment thereby facilitating communication between the first semiconductor die and the second semiconductor die. The plurality of interconnect pads can include transmitting pads, receiving pads, and transmitting and receiving pads. The alignment may be determined continuously or at times separated by an interval, where the interval is fixed or variable. Several variations on this embodiment are provided.
    • 本发明的一个实施例提供一种便于电容芯片间通信的系统。 在操作期间,系统首先确定第一半导体管芯和第二半导体管芯之间的对准。 接下来,基于对准,电信号被选择性地路由到多个互连焊盘中的至少一个互连焊盘,从而便于第一半导体管芯和第二半导体管芯之间的连通。 多个互连焊盘可以包括传输焊盘,接收焊盘以及发射和接收焊盘。 可以连续地或有时间隔地间隔地确定对准,其中间隔是固定的或可变的。 提供了该实施例的几个变型。
    • 39. 发明授权
    • Low-power memory write circuits
    • 低功耗存储器写入电路
    • US07085178B1
    • 2006-08-01
    • US11045940
    • 2005-01-27
    • Robert J. ProebstingRonald HoRobert J. Drost
    • Robert J. ProebstingRonald HoRobert J. Drost
    • G11C7/00
    • G11C7/1078G11C7/1048G11C7/1096G11C2207/2227
    • One embodiment of the present invention provides a system that writes to a cell in a memory using a low-voltage-swing signal across a pair of global bit-lines. During operation, the system receives a low-voltage-swing signal across a pair of global bit-lines, which is too low to reliably write the memory cell. Next, the system converts the low-voltage-swing signal to a high-voltage-swing signal, which is adequate to reliably write the memory cell. The system then writes to the memory cell by applying the high-voltage-swing signal across a pair of local bit-lines that are coupled to the memory cell. The use of low-voltage-swing signals on the global bit-lines reduces overall power consumption. Furthermore, in one embodiment of the present invention, the voltage conversion is achieved using a pair of cross-coupled NMOS transistors whose sources are directly or indirectly coupled with the global bit-lines, and whose drains are directly or indirectly coupled with the local bit-lines.
    • 本发明的一个实施例提供一种使用跨越一对全局位线的低电压摆幅信号向存储器中的单元写入的系统。 在运行期间,系统通过一对全局位线接收低电压摆幅信号,该位线太低而无法可靠地写存储单元。 接下来,系统将低电压摆幅信号转换成高电压摆幅信号,这足以可靠地写入存储单元。 然后,系统通过将耦合到存储器单元的一对本地位线施加高电压摆幅信号来写入存储器单元。 在全局位线上使用低电压摆幅信号可以降低总体功耗。 此外,在本发明的一个实施例中,使用一对交叉耦合的NMOS晶体管实现电压转换,其中源极与全局位线直接或间接耦合,并且其漏极与本地位直接或间接耦合 线。
    • 40. 发明授权
    • Full-wave rectifier for capacitance measurements
    • 全波整流电容测量
    • US07046017B1
    • 2006-05-16
    • US11216754
    • 2005-08-30
    • Robert J. DrostRonald HoIvan E. Sutherland
    • Robert J. DrostRonald HoIvan E. Sutherland
    • G01R27/26G01N27/22
    • G01R27/2605
    • One embodiment of the present invention provides an electronic circuit and method for measuring a capacitance. A signal generating mechanism generates a signal having a predefined frequency and predefined low and high voltage levels on one terminal of the capacitance. The other terminal of the capacitance is coupled to a switching mechanism. The switching mechanism is set to couple the other terminal of the capacitance to a first amplifier or a second amplifier for a portion of each signal cycle thereby full-wave rectifying a transient current flowing between the two terminals in the capacitance. Outputs of the first amplifier and the second amplifier are coupled to a current measurement mechanism for measuring the current. The capacitance is determined from the measured current. Several variations on this embodiment are provided.
    • 本发明的一个实施例提供一种用于测量电容的电子电路和方法。 信号发生机构在电容的一个端子上产生具有预定频率和预定义的低和高电压电平的信号。 电容的另一个端子耦合到开关机构。 开关机构被设置为将电容的另一个端子耦合到每个信号周期的一部分的第一放大器或第二放大器,由此对在电容中的两个端子之间流动的瞬态电流进行全波整流。 第一放大器和第二放大器的输出耦合到用于测量电流的电流测量机构。 电容由测量电流确定。 提供了该实施例的几个变型。