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31. 发明授权

US4202704A Optical energy conversion 失效
标题翻译：光能转换
公开(公告)号：US4202704A
公开(公告)日：1980-05-13
申请号：US968887
申请日：1978-12-13
申请人： Rodney T. Hodgson , Harold J. Hovel , Jerry M. Woodall
发明人： Rodney T. Hodgson , Harold J. Hovel , Jerry M. Woodall
IPC分类号： H01L31/04 , H01L31/055
CPC分类号： H01L31/055 , Y02E10/52
摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.
摘要翻译：通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率在半导体器件效率最高的方向。通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。

32. 发明授权

US08878055B2 Efficient nanoscale solar cell and fabrication method 有权
标题翻译：高效纳米级太阳能电池及其制造方法
公开(公告)号：US08878055B2
公开(公告)日：2014-11-04
申请号：US12852991
申请日：2010-08-09
申请人： Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
发明人： Keith E. Fogel , William S. Graham , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L31/00 , H01L31/052 , H01L31/0236 , H01L31/0352
CPC分类号： H01L31/0527 , H01L31/02366 , H01L31/03529 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
摘要翻译：光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。

33. 发明授权

US08441042B2 BEOL compatible FET structure 有权
标题翻译： BEOL兼容FET结构
公开(公告)号：US08441042B2
公开(公告)日：2013-05-14
申请号：US12561827
申请日：2009-09-17
申请人： Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
发明人： Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
IPC分类号： H01L21/76
CPC分类号： H01L23/5226 , H01L23/53271 , H01L27/124 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.
摘要翻译：本发明提供了用于在线路后端（BEOL）互连结构中并入薄膜晶体管的结构和制造工艺。所描述的结构和制造工艺与BEOL互连结构的处理要求相兼容。结构和制造工艺利用已经并入到互连布线层中的现有处理步骤和材料，以便降低与在这些层级中引入薄膜晶体管相关联的附加成本。与现有技术的3D集成方法相比，该结构能够实现多层次的垂直（3D）集成，具有改进的可制造性和可靠性。

34. 发明申请

US20120305929A1 BEOL COMPATIBLE FET STRUCTRURE 有权
标题翻译： BEOL兼容FET结构
公开(公告)号：US20120305929A1
公开(公告)日：2012-12-06
申请号：US13572742
申请日：2012-08-13
申请人： Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
发明人： Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
IPC分类号： H01L29/786
CPC分类号： H01L23/5226 , H01L23/53271 , H01L27/124 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.
摘要翻译：本发明提供了用于在线路后端（BEOL）互连结构中并入薄膜晶体管的结构和制造工艺。所描述的结构和制造工艺与BEOL互连结构的处理要求相兼容。结构和制造工艺利用已经并入到互连布线层中的现有处理步骤和材料，以便降低与在这些层级中引入薄膜晶体管相关联的附加成本。与现有技术的3D集成方法相比，该结构能够实现多层次的垂直（3D）集成，具有改进的可制造性和可靠性。

35. 发明授权

US08294027B2 Efficiency in antireflective coating layers for solar cells 有权
标题翻译：太阳能电池抗反射涂层的效率
公开(公告)号：US08294027B2
公开(公告)日：2012-10-23
申请号：US12689464
申请日：2010-01-19
申请人： Harold J. Hovel , Rainer K. Krause , Zhengwen Li , Huilong Zhu
发明人： Harold J. Hovel , Rainer K. Krause , Zhengwen Li , Huilong Zhu
IPC分类号： H01L31/04 , B05D5/12
CPC分类号： G02B1/113 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a cell structure includes doping a substrate to form a N-region and a P-region, disposing a first anti-reflective layer on the substrate, disposing a metallic contact paste on the first anti-reflective layer, drying the metallic contact paste to form contacts, disposing a second anti-reflective layer on the first anti-reflective layer and the metallic contacts, and heating the cell structure, wherein heating the cell structure results in metallic contact material penetrating the first anti-reflective layer and contacting the substrate.
摘要翻译：一种电池结构的制造方法，其特征在于，在衬底上掺杂形成N区和P区，在所述衬底上设置第一抗反射层，在所述第一抗反射层上设置金属接触膏，干燥所述金属接触膏以形成接触，在第一抗反射层和金属触点上设置第二抗反射层，并加热电池结构，其中加热电池结构导致金属接触材料穿透第一抗反射层并接触底物。

36. 发明授权

US08101856B2 Quantum well GaP/Si tandem photovoltaic cells 失效
标题翻译：量子阱GaP / Si串联光伏电池
公开(公告)号：US08101856B2
公开(公告)日：2012-01-24
申请号：US12243995
申请日：2008-10-02
申请人： Harold J. Hovel
发明人： Harold J. Hovel
IPC分类号： H01L31/032
CPC分类号： H01L31/0693 , B82Y20/00 , H01L31/0236 , H01L31/02363 , H01L31/035236 , H01L31/0547 , H01L31/0687 , Y02E10/52 , Y02E10/544
摘要： Two junction solar energy conversion devices, i.e. photovoltaic cells have a bottom silicon N+/P/P+ photovoltaic cell and an upper GaP N+/P/P+ photovoltaic cell containing quantum well layers which extend the wavelength range over which the GaP cell absorbs light. The quantum well layers are composed of materials other than Gallium Phosphide (GaP) and may be either pseudomorphic or metamorphic. Light trapping may be incorporated at the top surface of the GaP photovoltaic cell along with anti-reflective coatings, and light trapping may be incorporated on the bottom surface of the silicon cell. The bottom surface of the silicon photovoltaic cell is coated with a passivating dielectric layer and electrical contact to the silicon is made with conductive vias extending through the passivating layer.
摘要翻译：两结太阳能转换装置即光伏电池具有底部硅N + / P / P +光伏电池和包含量子阱层的上部GaP N + / P / P +光电池，其延伸GaP电池吸收光的波长范围。量子阱层由除了磷化镓（GaP）以外的材料组成，并且可以是伪晶体或变质的。光俘获可以与抗反射涂层一起并入GaP光伏电池的顶表面，并且可以在硅电池的底表面上引入光捕获。硅光伏电池的底表面涂覆有钝化介电层，并且通过延伸穿过钝化层的导电通孔制成与硅的电接触。

37. 发明授权

US08043886B2 Methods for manufacturing a contact grid on a photovoltaic cell 有权
标题翻译：在光伏电池上制造接触栅极的方法
公开(公告)号：US08043886B2
公开(公告)日：2011-10-25
申请号：US12849648
申请日：2010-08-03
申请人： Lawrence A. Clevenger , Harold J. Hovel , Rainer K. Krause , Kevin M. Prettyman
发明人： Lawrence A. Clevenger , Harold J. Hovel , Rainer K. Krause , Kevin M. Prettyman
IPC分类号： H01L21/283
CPC分类号： H01L31/022433 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y02E10/50
摘要： Processes for fabricating a contact grid for a photovoltaic cell generally includes providing a photovoltaic cell having an antireflective coating disposed on a sun facing side, the photovoltaic cell comprising a silicon substrate having a p-n junction; soft stamping a pattern of a UV sensitive photoresist and/or polymer onto the antireflective coating; exposing the UV sensitive photoresist and/or polymer to ultraviolet radiation to cure the UV sensitive photoresist and/or polymer; etching the pattern to form openings in the antireflective coating that define the contact grid; stripping the UV sensitive photoresist and/or polymer; and depositing a conductive metal into the openings defined by the pattern. The metal based paste can be aluminum based, which can be annealed at a relatively low temperature.
摘要翻译：用于制造用于光伏电池的接触栅极的方法通常包括提供具有设置在面向太阳侧的抗反射涂层的光伏电池，所述光伏电池包括具有p-n结的硅衬底; 将UV敏感的光致抗蚀剂和/或聚合物的图案软化到抗反射涂层上; 将UV敏感的光致抗蚀剂和/或聚合物暴露于紫外线辐射以固化UV敏感的光致抗蚀剂和/或聚合物; 蚀刻图案以在防反射涂层中形成限定接触网格的开口; 剥离UV敏感的光致抗蚀剂和/或聚合物; 以及将导电金属沉积到由图案限定的开口中。金属基糊料可以是铝基，其可以在相对低的温度下退火。

38. 发明申请

US20100083997A1 QUANTUM WELL GaP/Si TANDEM PHOTOVOLTAIC CELLS 失效
标题翻译： QUANTUM WELL GaP / Si TANDEM光伏电池
公开(公告)号：US20100083997A1
公开(公告)日：2010-04-08
申请号：US12243995
申请日：2008-10-02
申请人： Harold J. Hovel
发明人： Harold J. Hovel
IPC分类号： H01L31/042
CPC分类号： H01L31/0693 , B82Y20/00 , H01L31/0236 , H01L31/02363 , H01L31/035236 , H01L31/0547 , H01L31/0687 , Y02E10/52 , Y02E10/544
摘要： Two junction solar energy conversion devices, i.e. photovoltaic cells have a bottom silicon N+/P/P+ photovoltaic cell and an upper GaP N+/P/P+ photovoltaic cell containing quantum well layers which extend the wavelength range over which the GaP cell absorbs light. The quantum well layers are composed of materials other than Gallium Phosphide (GaP) and may be either pseudomorphic or metamorphic. Light trapping may be incorporated at the top surface of the GaP photovoltaic cell along with anti-reflective coatings, and light trapping may be incorporated on the bottom surface of the silicon cell. The bottom surface of the silicon photovoltaic cell is coated with a passivating dielectric layer and electrical contact to the silicon is made with conductive vias extending through the passivating layer.
摘要翻译：两结太阳能转换装置即光伏电池具有底部硅N + / P / P +光伏电池和包含量子阱层的上部GaP N + / P / P +光电池，其延伸GaP电池吸收光的波长范围。量子阱层由除了磷化镓（GaP）以外的材料组成，并且可以是伪晶体或变质的。光俘获可以与抗反射涂层一起并入GaP光伏电池的顶表面，并且可以在硅电池的底表面上引入光捕获。硅光伏电池的底表面涂覆有钝化介电层，并且通过延伸穿过钝化层的导电通孔制成与硅的电接触。

39. 发明授权

US5470661A Diamond-like carbon films from a hydrocarbon helium plasma 失效
标题翻译：来自烃氦等离子体的类金刚石碳膜
公开(公告)号：US5470661A
公开(公告)日：1995-11-28
申请号：US1374
申请日：1993-01-07
申请人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
发明人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
IPC分类号： G03F1/08 , C01B31/06 , C08J7/06 , C23C8/26 , C23C8/50 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04 , G02B1/10 , G11B5/255 , H01L21/31 , H01L21/314 , B24B3/02
CPC分类号： C23C16/26 , G02B1/105 , G11B5/255 , Y10S427/104 , Y10S427/106 , Y10T428/30
摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.
摘要翻译：本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。更具体地说，本发明的类金刚石碳膜通过采用氦气作为等离子体气体大量稀释的乙炔沉积在基板上。使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，从而使得它们对于各种各样的应用是非常需要的。

40. 发明授权

US4592793A Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates 失效
标题翻译：将杂质扩散到III-V半导体衬底的半导体体气相扩散中的工艺
公开(公告)号：US4592793A
公开(公告)日：1986-06-03
申请号：US712300
申请日：1985-03-15
申请人： Harold J. Hovel , Thermon E. McKoy
发明人： Harold J. Hovel , Thermon E. McKoy
IPC分类号： C30B31/06 , C30B29/40 , C30B31/02 , H01L21/223 , H01L21/225
CPC分类号： H01L21/2233 , H01L21/2258 , Y10S252/951
摘要： A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises:(a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which has been vapor deposited upon a major surface thereof in contact with, or in the proximity of, an object substrate fabricated from a III-V type semiconductor material with the dopant-containing layer of the deposition substrate being substantially opposed to a major surface of the object substrate;(b) introducing into the heating chamber a source of Group V element corresponding to the Group V element of the object substrate, said source being capable of providing Group V element in the vapor phase at the diffusion temperature with the vapor pressure of the vapor phase Group V element being at or above the equilibrium vapor pressure of the Group V element present at the surface of the object substrate; and,(c) heating the deposition substrate and the object substrate to the diffusion temperature for a period of time sufficient to diffuse a predetermined amount of dopant into the object substrate to a predetermined depth therein.
摘要翻译：公开了一种将掺杂剂扩散到III-V型半导体本体中的方法，其包括：（a）放置在基本上没有任何氧化物质的加热室中，该沉积基底具有已经气相沉积的掺杂剂层其主表面与由III-V型半导体材料制成的对象衬底接触或接近，其中沉积衬底的含掺杂剂层基本上与对象衬底的主表面相对; （b）将与对象基板的V族元素相对应的V族元素的源引入加热室，所述源能够在气相中以蒸气相的蒸气压提供气相中的V族元素 V族元素处于或高于存在于物体基板表面的V族元素的平衡蒸气压; 以及（c）将沉积基板和对象基板加热至扩散温度一段足以将预定量的掺杂剂扩散到目标基板中的时间段到其预定的深度。

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