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    • 32. 发明授权
    • Photovoltaic devices fabricated from insulating nanostructured template
    • 由绝缘纳米结构模板制造的光伏器件
    • US07462774B2
    • 2008-12-09
    • US10771250
    • 2004-02-02
    • Martin R. RoscheisenBrian M. SagerKarl Pichler
    • Martin R. RoscheisenBrian M. SagerKarl Pichler
    • H01L31/00H02N6/00
    • H01L51/4233B82Y10/00H01L31/0352H01L31/03529H01L51/0035H01L51/0036H01L51/0037H01L51/0038H01L51/0047H01L51/0051H01L51/0052H01L51/0053H01L51/0078H01L51/0094H01L51/4213H01L51/422H01L51/4226H01L51/4253H01L51/447Y02E10/549
    • Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture with an inorganic insulating nanostructured template having template elements between about 1 nm and about 500 nm in diameter with a elements density of between about 1012 elements/m2 and about 1016 elements/m2. A first charge-transfer material coats the walls of the template elements leaving behind additional space. A second charge-transfer material fills the additional space such that the first and second charge-transfer materials are volumetrically interdigitated. At least one charge transfer material has an absorbance of greater than about 103/cm. The first and second charge-transfer materials have complementary charge transfer properties with respect to each other. A lowest unoccupied molecular orbital (LUMO) or conduction band of the first charge-transfer material is offset from a LUMO or conduction band of the second charge-transfer material by greater than about 0.2 eV. An electrically conductive material may optionally be disposed between the nanostructured template and the first charge-transfer material.
    • 公开了太阳能电池等光伏器件及其制造方法。 器件的特征可以在于具有无机绝缘纳米结构化模板的结构,其具有直径在约1nm至约500nm之间的模板元件,元件密度为约1012个元/ m 2至约10 16个元/ m 2。 第一电荷转移材料涂覆模板元件的壁,留下额外的空间。 第二电荷转移材料填充附加空间,使得第一和第二电荷转移材料是体积相互交错的。 至少一种电荷转移材料的吸光度大于约103 / cm。 第一和第二电荷转移材料相对于彼此具有互补的电荷转移性质。 第一电荷转移材料的最低未占分子轨道(LUMO)或导带从第二电荷转移材料的LUMO或导带偏移大于约0.2eV。 导电材料可以任选地设置在纳米结构化模板和第一电荷转移材料之间。
    • 36. 发明授权
    • Series interconnected optoelectronic device module assembly
    • 系列互连光电器件组件
    • US07732232B2
    • 2010-06-08
    • US11865691
    • 2007-10-01
    • James R. SheatsSam KaoGregory A. MillerMartin R. Roscheisen
    • James R. SheatsSam KaoGregory A. MillerMartin R. Roscheisen
    • H01L21/00
    • H01L31/0392H01L27/3204H01L31/03925H01L31/03928H01L31/046H01L31/0465H01L31/0749H01L31/18H01L51/5203Y02E10/541Y02P70/521
    • Series interconnection of optoelectronic device modules is disclosed. Each device module includes an active layer disposed between a bottom electrode and a transparent conducting layer. An insulating layer is disposed between the bottom electrode of a first device module and a backside top electrode of the first device module. One or more vias are formed through the active layer, transparent conducting layer and insulating layer of the first device module. Sidewalls of the vias are coated with an insulating material such that a channel is formed through the insulating material to the backside top electrode of the first device module. The channel is at least partially filled with an electrically conductive material to form a plug that makes electrical contact between the transparent conducting layer and the backside top electrode of the first device module. Portions of the backside top electrode and insulating layer of a second device module are cut back to expose a portion of the bottom electrode of the second device module. The first and second device modules are attached to an insulating carrier substrate. Electrical contact is made between the backside top electrode of the first device module and the exposed portion of the bottom electrode of the second device module.
    • 公开了光电器件模块的串联互连。 每个器件模块包括设置在底部电极和透明导电层之间的有源层。 绝缘层设置在第一器件模块的底部电极和第一器件模块的背面顶部电极之间。 通过第一器件模块的有源层,透明导电层和绝缘层形成一个或多个通孔。 通孔的侧壁涂覆有绝缘材料,使得通过绝缘材料形成通道到第一器件模块的背面顶部电极。 通道至少部分地填充有导电材料以形成在第一器件模块的透明导电层和背面顶部电极之间形成电接触的插塞。 背面顶部电极和第二器件模块的绝缘层的部分被切割以暴露第二器件模块的底部电极的一部分。 第一和第二器件模块附接到绝缘载体衬底。 在第一器件模块的背面顶部电极和第二器件模块的底部电极的暴露部分之间形成电接触。