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31. 发明申请

US20080308847A1 METHOD OF MAKING (100) NMOS AND (110) PMOS SIDEWALL SURFACE ON THE SAME FIN ORIENTATION FOR MULTIPLE GATE MOSFET WITH DSB SUBSTRATE 有权
标题翻译：在具有DSB基板的多个栅极MOSFET的同一熔接方向上制造（100）NMOS和（110）PMOS面板表面的方法
公开(公告)号：US20080308847A1
公开(公告)日：2008-12-18
申请号：US11764442
申请日：2007-06-18
申请人： Weize XIONG , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
发明人： Weize XIONG , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
IPC分类号： H01L27/11 , H01L21/8244
CPC分类号： H01L27/0886 , G11C11/412 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/045 , Y10S257/90 , Y10S438/973 , Y10S438/982
摘要： A method of forming an integrated circuit device that includes a plurality of MuGFETs is disclosed. A PMOS fin of a MuGFET is formed on a substrate. The PMOS fin includes a channel of a first surface of a first crystal orientation. A NMOS fin of another MuGFET is formed on the substrate. The NMOS fin includes a channel on the substrate at one of 0° and 90° to the PMOS fin and includes a second surface of a second crystal orientation.
摘要翻译：公开了一种形成包括多个MuGFET的集成电路器件的方法。在基板上形成MuGFET的PMOS鳍。 PMOS鳍包括第一晶体取向的第一表面的沟道。在基板上形成另一个MuGFET的NMOS鳍。所述NMOS鳍片包括在所述衬底上与所述PMOS鳍片0°和90°之一处的通道，并且包括第二晶体取向的第二表面。

32. 发明申请

US20080185675A1 Trench Isolation Structure and a Method of Manufacture Therefor 审中-公开
标题翻译：沟槽隔离结构及其制造方法
公开(公告)号：US20080185675A1
公开(公告)日：2008-08-07
申请号：US12101965
申请日：2008-04-12
申请人： Rick L. Wise , Mark S. Rodder
发明人： Rick L. Wise , Mark S. Rodder
IPC分类号： H01L23/58
CPC分类号： H01L21/76224 , H01L21/823807 , H01L21/823878
摘要： The present invention provides a trench isolation structure, a method of manufacture therefor and a method for manufacturing an integrated circuit including the same. The trench isolation structure (130), in one embodiment, includes a trench located within a substrate (110), the trench having a buffer layer (133) located on sidewalls thereof. The trench isolation structure (130) further includes a barrier layer (135) located over the buffer layer (133), and fill material (138) located over the barrier layer (135) and substantially filling the trench.
摘要翻译：本发明提供一种沟槽隔离结构及其制造方法以及包括该沟槽隔离结构的集成电路的制造方法。在一个实施例中，沟槽隔离结构（130）包括位于衬底（110）内的沟槽，沟槽具有位于其侧壁上的缓冲层（133）。沟槽隔离结构（130）还包括位于缓冲层（133）上的阻挡层（135）和位于阻挡层（135）上方并且基本上填充沟槽的填充材料（138）。

33. 发明授权

US06496352B2 Post-in-crown capacitor and method of manufacture 有权
标题翻译：后置电容器及其制造方法
公开(公告)号：US06496352B2
公开(公告)日：2002-12-17
申请号：US09335348
申请日：1999-06-17
申请人： Darius L. Crenshaw , William F. Richardson , Rick L. Wise
发明人： Darius L. Crenshaw , William F. Richardson , Rick L. Wise
IPC分类号： H01G4005
CPC分类号： H01L28/91 , H01L21/3212 , H01L28/84
摘要： A post-in-crown capacitor is disclosed. The post-in-crown capacitor (60) includes a crown (44) coupled to a conductive via (20). A post (48) is disposed within the crown (44) and a capacitor insulation layer (50) is formed outwardly from the crown (44) and the post (48). A capacitor plate layer (52) is then formed outwardly from the capacitor insulation layer (50).
摘要翻译：公开了一种后置电容器。冠状后电容器（60）包括联接到导电通路（20）的表冠（44）。柱（48）设置在表冠（44）内，并且从表冠（44）和柱（48）向外形成电容器绝缘层（50）。然后从电容器绝缘层（50）向外形成电容器板层（52）。

34. 发明授权

US6135460A Method of and apparatus for purifying reduced pressure process chambers 失效
标题翻译：减压处理室的净化方法及装置
公开(公告)号：US6135460A
公开(公告)日：2000-10-24
申请号：US124799
申请日：1998-07-29
申请人： Rick L. Wise , Michael A. Kasner
发明人： Rick L. Wise , Michael A. Kasner
IPC分类号： B01D53/04 , C09K3/10 , H01L21/00
CPC分类号： H01L21/67017 , B01D53/04 , C09K3/10 , B01D2253/202 , B01D2258/0216 , Y10S277/913 , Y10S277/918
摘要： Gas purification resins are encapsulated in deformable, permeable polymer sheaths to form purification rings, gaskets or seals. A primary source of contaminants in advanced vacuum processors equipped with vacuum load-lock systems and process gas purifiers is from the leakage of outside ambient contaminants around O-ring seals. Using gas purification rings, gaskets or seals properly placed inside or outside of the outer O-ring seal, the level of contaminants (particularly hydrocarbons, oxygen and moisture) may be significantly reduced or eliminated. The gas purification ring is preferably a hydrocarbon and/or oxygen and/or moisture absorbing and/or adsorbing material encased within a contaminant permeable casing. The gas purification ring can be round or flattened and is preferably more resilient than the O-rings adjacent thereto which form the seal. An adhesive can be placed around the casing holding the purification resin to prevent movement from its purifying location.
摘要翻译：气体净化树脂被封装在可变形的可渗透的聚合物护套中以形成净化环，垫圈或密封件。配备真空负载锁定系统和工艺气体净化器的先进真空处理器中的主要污染源是O型圈密封件周围外部污染物的泄漏。使用气体净化环，垫圈或密封圈适当地放置在外部O形圈密封件的内部或外部，污染物（特别是碳氢化合物，氧气和水分）的水平可能会显着降低或消除。气体净化环优选为包封在可渗透污染的外壳内的烃类和/或氧气和/或吸湿材料和/或吸附材料。气体净化环可以是圆形或扁平的，并且优选地比形成密封件的与其相邻的O形环更有弹性。粘合剂可以放置在保持净化树脂的外壳周围，以防止从其净化位置移动。

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