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    • 37. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08772836B2
    • 2014-07-08
    • US13042519
    • 2011-03-08
    • Osamu Machida
    • Osamu Machida
    • H01L29/66
    • H01L29/7787H01L29/2003H01L29/7391H01L29/872
    • To provide a semiconductor device in which a rectifying element capable of reducing a leak current in reverse bias when a high voltage is applied and reducing a forward voltage drop Vf and a transistor element are integrally formed on a single substrate.A semiconductor device has a transistor element and a rectifying element on a single substrate. The transistor element has an active layer formed on the substrate and three electrodes (source electrode, drain electrode, and gate electrode) disposed on the active layer. The rectifying element has an anode electrode disposed on the active layer, a cathode electrode which is the drain electrode, and a first auxiliary electrode between the anode electrode and cathode electrode.
    • 提供一种半导体器件,其中,当施加高电压时能够减小反向偏压中的漏电流并且减小正向压降Vf和晶体管元件的整流元件整体形成在单个衬底上。 半导体器件在单个衬底上具有晶体管元件和整流元件。 晶体管元件具有形成在基板上的有源层和设置在有源层上的三个电极(源电极,漏电极和栅电极)。 整流元件具有设置在有源层上的阳极电极,作为漏电极的阴极电极和位于阳极电极和阴极电极之间的第一辅助电极。
    • 39. 发明授权
    • Gate driver
    • 闸门司机
    • US08558587B2
    • 2013-10-15
    • US13482384
    • 2012-05-29
    • Osamu MachidaShinji Sato
    • Osamu MachidaShinji Sato
    • H03K3/00
    • H02M3/1588H02M1/08Y02B70/1466
    • A gate driver turns on/off a switching element Q1 by applying a control signal from a controller to a gate of the switching element. The switching element has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor C1 and a first resistor R1 and is connected between the controller and the gate of the switching element and a short-circuit unit S4 that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.
    • 栅极驱动器通过将来自控制器的控制信号施加到开关元件的栅极来打开/关闭开关元件Q1。 开关元件具有栅极,漏极和源极,并且包含宽带隙半导体。 栅极驱动器包括并联电路,其包括第一电容器C1和第一电阻器R1,并且连接在控制器和开关元件的栅极之间,并且连接在开关元件的栅极和源极之间的短路单元S4 并且在从控制信号的OFF脉冲延迟之后使开关元件的栅极和源极短路。