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    • 31. 发明授权
    • Contextual-display advertisement
    • 上下文显示广告
    • US08543924B2
    • 2013-09-24
    • US12043543
    • 2008-03-06
    • Ying ShanYing Li
    • Ying ShanYing Li
    • G09G5/00
    • G06Q30/02
    • Methods and computer storage media for creating contextual-display advertisements are provided. A request for a contextual-display advertisement to be presented on a page is received. Upon receiving the request, the page is evaluated to determine the context of the page so that the resulting advertisement is contextually related to the requesting page. The contextually related text and base image are extracted from their respective database to be merged into a contextual-display advertisement. The visual characteristics of the advertisement text are manipulated to provide visual congruity among the elements of the advertisement. Additionally, the placement of the text on the base image is optimized to provide a contextual-image advertisement that is then rendered to be presented on the requesting page.
    • 提供了用于创建上下文显示广告的方法和计算机存储介质。 接收到在页面上呈现的上下文显示广告的请求。 在接收到请求时,评估页面以确定页面的上下文,使得所生成的广告与请求页面上下文相关。 从相应的数据库中提取上下文相关的文本和基本图像以合并到上下文显示广告中。 操纵广告文字的视觉特征,以提供广告元素之间的视觉一致性。 此外,文本在基本图像上的放置被优化以提供上下文图像广告,然后将其呈现在请求页面上。
    • 33. 发明授权
    • Method of forming E-fuse in replacement metal gate manufacturing process
    • 在更换金属栅极制造工艺中形成电熔丝的方法
    • US08492286B2
    • 2013-07-23
    • US12951107
    • 2010-11-22
    • Henry K. UtomoYing LiGerald L. Leake
    • Henry K. UtomoYing LiGerald L. Leake
    • H01L21/302H01L21/461
    • H01L23/5256H01L21/82345H01L27/0629H01L2924/0002H01L2924/00
    • Embodiment of the present invention provides a method of forming electronic fuse or commonly known as e-fuse. The method includes forming a polysilicon structure and a field-effect-transistor (FET) structure together on top of a common semiconductor substrate, the FET structure having a sacrificial gate electrode; implanting at least one dopant into the polysilicon structure to create a doped polysilicon layer in at least a top portion of the polysilicon structure; subjecting the polysilicon structure and the FET structure to a reactive-ion-etching (RIE) process, the RIE process selectively removing the sacrificial gate electrode of the FET structure while the doped polysilicon layer being substantially unaffected by the RIE process; and converting the polysilicon structure including the doped polysilicon layer into a silicide to form the electronic fuse.
    • 本发明的实施例提供一种形成电子熔断器或通常称为电熔丝的方法。 该方法包括在公共半导体衬底的顶部上形成多晶硅结构和场效应晶体管(FET)结构,该FET结构具有牺牲栅电极; 将至少一种掺杂剂注入所述多晶硅结构中以在所述多晶硅结构的至少顶部中产生掺杂多晶硅层; 将多晶硅结构和FET结构进行反应离子蚀刻(RIE)处理,RIE工艺选择性地去除FET结构的牺牲栅电极,同时掺杂多晶硅层基本上不受RIE工艺的影响; 以及将包括掺杂多晶硅层的多晶硅结构转换成硅化物以形成电子熔丝。