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31. 发明授权

US07611933B2 Process for manufacturing a thin-film transistor (TFT) device and TFT device manufactured by the process 有权
标题翻译：用于制造薄膜晶体管（TFT）器件和通过该工艺制造的TFT器件的工艺
公开(公告)号：US07611933B2
公开(公告)日：2009-11-03
申请号：US11478332
申请日：2006-06-28
申请人： Salvatore Leonardi , Claudia Caligiore
发明人： Salvatore Leonardi , Claudia Caligiore
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02686 , H01L21/02488 , H01L21/02532 , H01L21/2026 , H01L27/1229 , H01L27/1281 , H01L29/66757
摘要： A process for manufacturing a thin-film transistor device includes forming a dielectric insulation layer on a substrate, forming an amorphous silicon layer on the dielectric insulation layer, crystallizing the amorphous silicon layer, so as to obtain polycrystalline silicon, forming gate structures on the polycrystalline silicon, and forming first doped regions within the polycrystalline silicon laterally with respect to the gate structures. The crystallizing step includes forming first capping dielectric regions on the amorphous silicon layer, and then irradiating the amorphous silicon layer using a laser so as to form active areas of polycrystalline silicon separated by separation portions of amorphous silicon underlying the first capping dielectric regions.
摘要翻译：一种薄膜晶体管器件的制造方法，其特征在于，在基板上形成介电绝缘层，在所述绝缘层上形成非晶硅层，使所述非晶硅层结晶化，得到多晶硅，在所述多晶硅上形成栅极结构硅，并且相对于栅极结构横向地在多晶硅内形成第一掺杂区域。所述结晶步骤包括在所述非晶硅层上形成第一覆盖电介质区域，然后使用激光照射所述非晶硅层，以便形成由所述第一覆盖电介质区域下方的非晶硅的分离部分分离的多晶硅的有源区域。

32. 发明申请

US20080085433A1 PROCESS AND CORRESPONDING APPARATUS FOR CONTINUOUSLY PRODUCING GASEOUS HYDROGEN TO BE SUPPLIED TO MICRO FUEL CELLS AND INTEGRATED SYSTEM FOR PRODUCING ELECTRIC ENERGY 有权
标题翻译：用于连续生产供应给微型燃料电池的气化氢的方法和相应装置以及用于生产电能的集成系统
公开(公告)号：US20080085433A1
公开(公告)日：2008-04-10
申请号：US11867893
申请日：2007-10-05
申请人： Roberta Giuffrida , Marco Salanitri , Giuseppe Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
发明人： Roberta Giuffrida , Marco Salanitri , Giuseppe Spoto , Stefania Calamia , Salvatore Leonardi , Salvatore Coffa , Roberta Zito
IPC分类号： H01M8/04 , B01J19/00 , H01M8/18
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00835 , B01J2219/00891 , B01J2219/00907 , C01B3/065 , C01B2203/066 , H01M8/065 , H01M8/1097 , H01M2008/1095 , Y02E60/362
摘要： A process for the production of hydrogen for micro fuel cells, comprises the successive steps of: continuously supplying a catalytic bed with an aqueous solution of sodium borohydride, the catalytic bed being made of at least one metal chosen among cobalt, nickel, platinum, ruthenium with obtainment of hydrogen and of a by-product comprising sodium metaborate, continuously recovering the hydrogen thus obtained and supplying, with said hydrogen as it is as obtained, a micro fuel cell which transforms hydrogen into electric energy. An apparatus provides continuous supply of hydrogen to a micro fuel cell. An integrated system structured for continuously producing and supplying hydrogen to a micro fuel cell and for converting the continuously supplied hydrogen into electric energy.
摘要翻译：用于生产用于微型燃料电池的氢气的方法包括以下连续步骤：连续向催化床提供硼氢化钠水溶液，催化床由选自钴，镍，铂，钌中的至少一种金属制成通过获得氢气和包含偏硼酸钠的副产物，连续回收由此获得的氢气，并将氢气原样供应到将氢气转化为电能的微型燃料电池中。一种装置向微型燃料电池提供氢的连续供应。一种集成系统，其被构造用于连续生产和向微型燃料电池供应氢气，并将连续供应的氢气转化为电能。

33. 发明授权

US06900504B2 Integrated structure effective to form a MOS component in a dielectrically insulated well 有权
标题翻译：集成结构有效地在介电绝缘井中形成MOS部件
公开(公告)号：US06900504B2
公开(公告)日：2005-05-31
申请号：US10442646
申请日：2003-05-21
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L21/762 , H01L29/06 , H01L29/10 , H01L29/786 , H01L31/0392
CPC分类号： H01L29/78612 , H01L21/76283 , H01L29/0692 , H01L29/1087
摘要： The integrated structure and process is effective to form, in a dielectrically insulated well, a MOS component including respective drain and source regions of a first conductivity type as well as a gate region. The integrated structure includes a cut-off layer of the second conductivity type effective to surround only the source region. The cut-off layer is self-aligned by the gate region.
摘要翻译：该集成结构和工艺有效地在介电绝缘的阱中形成包括第一导电类型和栅极区的各自的漏极和源极区的MOS分量。该集成结构包括仅仅围绕源极区域的第二导电类型的截止层。截止层由栅极区域自对准。

34. 发明授权

US06798037B2 Isolation trench structure for integrated devices 有权
标题翻译：集成器件的隔离沟槽结构
公开(公告)号：US06798037B2
公开(公告)日：2004-09-28
申请号：US09853833
申请日：2001-05-10
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L2900
CPC分类号： H01L21/763
摘要： An integrated device having a substrate wherein a buried layer and an epitaxial region have been formed, and an isolation structure adapted to define a plurality of isolation wells for integrating the components of the integrated device therein, the isolation structure including plural dielectrically insulated regions or dielectric trenches being filled with a conductive material to form a plurality of contact regions to buried regions of the device, the buried regions including, in particular, the substrate and buried layer.
摘要翻译：一种具有衬底的集成器件，其中已经形成了掩埋层和外延区域，以及隔离结构，其适于限定用于将集成器件的部件集成在其中的多个隔离阱，该隔离结构包括多个介电绝缘区域或电介质沟槽填充有导电材料以形成多个接触区域到器件的掩埋区域，掩埋区域尤其包括衬底和掩埋层。

35. 发明授权

US06693019B2 METHOD OF MANUFACTURING AN ELECTRONIC POWER DEVICE MONOLITHICALLY INTEGRATED ON A SEMICONDUCTOR AND COMPRISING A FIRST POWER REGION, A SECOND REGION, AND AN ISOLATION STRUCTURE OF LIMITED PLANAR DIMENSION 有权
标题翻译：制造一体化集成在半导体上并包含第一电源区域，第二区域以及有限平面尺寸的隔离结构的电子设备的方法
公开(公告)号：US06693019B2
公开(公告)日：2004-02-17
申请号：US10213016
申请日：2002-08-05
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L2176
CPC分类号： H01L21/76208 , H01L21/761 , H01L27/088
摘要： An electronic power device is integrated monolithically in a semiconductor substrate. The device has a first power region and a second region, each region including P/N junction formed of a first semiconductor region with a first type of conductivity, which first semiconductor region extends through the substrate from the top surface of the device and is diffused into a second semiconductor region with the opposite conductivity from the first. The device also includes an interface structure between the two regions, of substantial thickness and limited planar size, that includes a trench filled with dielectric material. A method of manufacturing the electronic power device includes forming a silicon oxide-filled trench. The method includes forming, in the substrate, a plurality of small trenches having predetermined widths and -being delimited by a corresponding plurality of semiconductor material walls having second predetermined widths. Next, the semiconductor is oxidized by a thermal process directed to oxidize the walls which produces a single trench.
摘要翻译：电子功率器件整体地集成在半导体衬底中。该器件具有第一功率区和第二区，每个区域包括由具有第一导电类型的第一半导体区域形成的P / N结，该第一半导体区域从器件的顶表面延伸穿过衬底并被扩散进入具有与第一半导体相反的导电性的第二半导体区域。该装置还包括两个区域之间的界面结构，其具有相当大的厚度和有限的平面尺寸，其包括填充有电介质材料的沟槽。一种制造电子功率器件的方法包括形成填充氧化硅的沟槽。该方法包括在衬底中形成具有预定宽度的多个小沟槽，并且由相应的具有第二预定宽度的多个半导体材料壁界定。接下来，半导体被热处理氧化，以产生单个沟槽的氧化壁。

36. 发明授权

US06566732B1 High voltage resistive structure integrated on a semiconductor substrate 有权
标题翻译：集成在半导体衬底上的高电压电阻结构
公开(公告)号：US06566732B1
公开(公告)日：2003-05-20
申请号：US09425445
申请日：1999-10-22
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L2900
CPC分类号： H01L21/76208 , H01L21/761 , H01L27/0802
摘要： A resistive structure integrated on a semiconductive substrate is described. The resistive structure has a first type of conductivity formed into a serpentine region of conductivity which is opposite to that of the semiconductive substrate. In at least two parallel portions of the serpentine region, there is at least one trench filled with an insulating material.
摘要翻译：描述了集成在半导体基板上的电阻结构。电阻结构具有形成为与半导体衬底相反的导电性的蛇形区域的第一类导电性。在蛇形区域的至少两个平行部分中，存在填充有绝缘材料的至少一个沟槽。

37. 发明授权

US06525392B1 Semiconductor power device with insulated circuit 有权
标题翻译：具有绝缘电路的半导体功率器件
公开(公告)号：US06525392B1
公开(公告)日：2003-02-25
申请号：US09352477
申请日：1999-07-13
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L2707
CPC分类号： H01L21/7624 , H01L21/762
摘要： A semiconductor power device with an insulated control circuit is formed in a chip of semiconductor material having predominantly a first type of conductivity. The device includes a region having a second type of conductivity, buried in the semiconductor material, and at least one insulated region of semiconductor material, containing at least part of the control circuit, disposed between the front surface of the chip and the buried region. The device also includes electrical contacts for the buried region and the semiconductor material. To eliminate the effects of parasitic components, the insulated region is delimited, at least partially, by an insulating dielectric material.
摘要翻译：具有绝缘控制电路的半导体功率器件形成在主要具有第一类导电性的半导体材料的芯片中。该器件包括埋置在半导体材料中的第二导电类型的区域和至少一个半导体材料的绝缘区域，该半导体材料的绝缘区域包含设置在芯片的前表面和掩埋区域之间的控制电路的至少一部分。该器件还包括用于掩埋区域和半导体材料的电触点。为了消除寄生成分的影响，绝缘区域至少部分由绝缘电介质材料界定。

38. 发明授权

US6121640A Monolithically integrated device with protective structure 有权
标题翻译：具有保护结构的单片集成器件
公开(公告)号：US6121640A
公开(公告)日：2000-09-19
申请号：US336639
申请日：1999-06-18
申请人： Salvatore Leonardi
发明人： Salvatore Leonardi
IPC分类号： H01L27/06 , H01L27/07 , H01L29/74 , H01L31/111
CPC分类号： H01L27/0716 , H01L27/0635 , H01L29/7302 , H01L29/739 , H01L29/7803 , H01L29/7808
摘要： A monolithic integrated device includes a protection structure and is formed in a semiconductor material substrate having a first conductivity type, which device includes at least a first epitaxial layer formed on the substrate. The integrated device further includes a bipolar first transistor formed of a base region having a second conductivity type and including a first buried region formed in the first epitaxial layer, and having a first diffused region which extends from the first buried region to contact a top surface of the integrated device through a surface contact region with a high concentration of dopant material. The first transistor also has an emitter region with the first conductivity type, embedded in the base region, and including a second buried region formed on the first buried region and a second diffused region, with a high concentration of dopant material, which extends from the second buried region to contact the top surface of the integrated device. The integrated device additionally comprises a second transistor of the MOS type having a drain region formed in the emitter region of the first transistor, said drain region incorporating a third diffused region with a high concentration of dopant material and the first conductivity type which includes a source region of the second transistor. The protection structure is formed of the overlap of the surface contact region and at least one of the diffused regions with a high concentration of dopant material to provide a low breakdown voltage junction of the Zener type.
摘要翻译：单片集成器件包括保护结构，并形成在具有第一导电类型的半导体材料衬底中，该器件至少包括形成在衬底上的第一外延层。集成器件还包括由具有第二导电类型的基极区形成的双极性第一晶体管，并且包括形成在第一外延层中的第一掩埋区，并且具有从第一掩埋区延伸以接触顶表面的第一扩散区的集成器件通过具有高浓度掺杂剂材料的表面接触区域。第一晶体管还具有第一导电类型的发射极区域，嵌入在基极区域中，并且包括形成在第一掩埋区域上的第二掩埋区域和具有高浓度掺杂剂材料的第二扩散区域，其从第二掩埋区域以与集成器件的顶面接触。集成器件还包括MOS型的第二晶体管，其具有形成在第一晶体管的发射极区域中的漏极区域，所述漏极区域包含具有高浓度掺杂剂材料的第三扩散区域，并且第一导电类型包括源极第二晶体管的区域。保护结构由表面接触区域和至少一个扩散区域与高浓度掺杂剂材料的重叠形成，以提供齐纳二极型的低击穿电压结。

39. 发明授权

US5895249A Integrated edge structure for high voltage semiconductor devices and related manufacturing process 失效
标题翻译：高压半导体器件集成边缘结构及相关制造工艺
公开(公告)号：US5895249A
公开(公告)日：1999-04-20
申请号：US604110
申请日：1996-02-20
申请人： Raffaele Zambrano , Salvatore Leonardi , Giovanna Cacciola
发明人： Raffaele Zambrano , Salvatore Leonardi , Giovanna Cacciola
IPC分类号： H01L29/73 , H01L21/331 , H01L21/76 , H01L29/06 , H01L29/10 , H01L29/732 , H01L29/78
CPC分类号： H01L29/66295 , H01L29/0615 , H01L29/1004
摘要： An integrated edge structure for a high voltage semiconductor device comprising a PN junction represented by a diffused region of a first conductivity type extending from a semiconductor device top surface is described. The edge structure comprises a first, lightly doped ring of the first conductivity type obtained in a first, lightly doped epitaxial layer of a second conductivity type and surrounding said diffused region, and a second, lightly doped ring of the first conductivity type, comprising at least one portion superimposed on and merged with said first ring, obtained in a second, lightly doped epitaxial layer of the second conductivity type grown over the first epitaxial layer.
摘要翻译：描述了一种用于高电压半导体器件的集成边缘结构，其包括由从半导体器件顶表面延伸的第一导电类型的扩散区域表示的PN结。该边缘结构包括第一导电类型的第一轻掺杂环，其在第二导电类型的第一轻掺杂外延层中并且包围所述扩散区，以及第二导电类型的第二轻掺杂环，包括在第一外延层上生长的第二导电类型的第二轻掺杂外延层中获得的至少一个部分叠加在所述第一环上并与之合并。

40. 发明授权

US08338049B2 Monocrystalline silicon flow connector and microfluidic system modularly built thereon for feeding a fuel solution to an energy converting device 有权
标题翻译：单晶硅流连接器和微流体系统模块地构建在其上，用于将燃料溶液供给到能量转换装置
公开(公告)号：US08338049B2
公开(公告)日：2012-12-25
申请号：US11619090
申请日：2007-01-02
申请人： Giuseppe Emanuele Spoto , Roberta Giuffrida , Salvatore Leonardi , Salvatore Abbisso
发明人： Giuseppe Emanuele Spoto , Roberta Giuffrida , Salvatore Leonardi , Salvatore Abbisso
IPC分类号： H01M2/38 , H01M2/40 , H01M8/04 , H01M8/22 , H01M8/24 , B05D5/12
CPC分类号： H01M8/2484 , H01M8/1011 , H01M8/2485 , H01M2008/1095 , H01M2250/30 , Y02B90/18 , Y02E60/523 , Y02P70/56
摘要： A microfluidic system through which a solution of at least an oxidable compound is fed to a feed manifold of an energy converting electrochemical device includes a flow connector. The flow connector includes a silicon platform having a bottom side and an opposing top side, and through holes extending therethough. The silicon platform includes first and second channels defined on the bottom side for communicating with the through holes. The second channel forms an inlet for the feed manifold of the energy converting electrochemical device when the bottom side of the silicon platform is coupled to a flat coupling area of the device. A micropump module is coupled to the top side of the silicon platform for communicating with the through holes in the first and second channels. First and second supply cartridges are coupled to the top side of the silicon platform for communicating with the through holes in the first channel.
摘要翻译：将至少一种可氧化化合物的溶液供给到能量转换电化学装置的进料歧管的微流体系统包括流动连接器。流动连接器包括具有底侧和相对顶侧的硅平台以及在其上延伸的通孔。硅平台包括限定在底侧上的与通孔连通的第一和第二通道。当硅平台的底侧耦合到装置的平坦耦合区域时，第二通道形成能量转换电化学装置的进料歧管的入口。微型泵模块耦合到硅平台的顶侧，用于与第一和第二通道中的通孔相通。第一和第二供应盒连接到硅平台的顶侧，用于与第一通道中的通孔相通。

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