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    • 31. 发明申请
    • ULTRASOUND PROBE
    • 超声探头
    • US20090069688A1
    • 2009-03-12
    • US12161962
    • 2006-11-14
    • Takanori AonoTatsuya NagataKatsunori AsafusaTakashi KobayashiNaoya Kanda
    • Takanori AonoTatsuya NagataKatsunori AsafusaTakashi KobayashiNaoya Kanda
    • A61B8/14
    • G10K11/002A61B8/00
    • There is provided an ultrasound probe including a first substrate having a silicon substrate and an ultrasound transmit-receive element, an acoustic lens disposed over an upper surface of the first substrate, and a damping layer disposed under the first substrate, in which a second substrate is disposed between a lower surface of the first substrate and an upper surface of the damping layer, and the second substrate is made of a material having approximately the same linear expansion coefficient and acoustic impedance as the silicon substrate of the first substrate. With this structure, it is possible to provide the ultrasound probe which can prevent damage to the silicon substrate due to temperature change and has excellent transmission/reception performance and structure reliability while reducing noise by reflected waves in transmission and reception.
    • 提供一种超声波探头,其包括具有硅衬底和超声波发射接收元件的第一衬底,设置在第一衬底的上表面上的声透镜,以及设置在第一衬底下方的阻尼层,其中第二衬底 设置在第一基板的下表面和阻尼层的上表面之间,第二基板由具有与第一基板的硅基板大致相同的线膨胀系数和声阻抗的材料制成。 利用这种结构,可以提供能够防止由于温度变化而损坏硅基板的超声波探头,并且在发送和接收中减少反射波的噪声的同时具有优异的发送/接收性能和结构可靠性。
    • 35. 发明授权
    • Ultrasound probe
    • 超声探头
    • US07969067B2
    • 2011-06-28
    • US12161962
    • 2006-11-14
    • Takanori AonoTatsuya NagataKatsunori AsafusaTakashi KobayashiNaoya Kanda
    • Takanori AonoTatsuya NagataKatsunori AsafusaTakashi KobayashiNaoya Kanda
    • H01L41/08
    • G10K11/002A61B8/00
    • There is provided an ultrasound probe including a first substrate having a silicon substrate and an ultrasound transmit-receive element, an acoustic lens disposed over an upper surface of the first substrate, and a damping layer disposed under the first substrate, in which a second substrate is disposed between a lower surface of the first substrate and an upper surface of the damping layer, and the second substrate is made of a material having approximately the same linear expansion coefficient and acoustic impedance as the silicon substrate of the first substrate. With this structure, it is possible to provide the ultrasound probe which can prevent damage to the silicon substrate due to temperature change and has excellent transmission/reception performance and structure reliability while reducing noise by reflected waves in transmission and reception.
    • 提供一种超声波探头,其包括具有硅衬底和超声波发射接收元件的第一衬底,设置在第一衬底的上表面上的声透镜,以及设置在第一衬底下方的阻尼层,其中第二衬底 设置在第一基板的下表面和阻尼层的上表面之间,第二基板由具有与第一基板的硅基板大致相同的线膨胀系数和声阻抗的材料制成。 利用这种结构,可以提供能够防止由于温度变化而损坏硅基板的超声波探头,并且在发送和接收中减少反射波的噪声的同时具有优异的发送/接收性能和结构可靠性。
    • 37. 发明授权
    • Ultrasonic transducer and manufacturing method thereof
    • 超声波换能器及其制造方法
    • US07675221B2
    • 2010-03-09
    • US11489612
    • 2006-07-20
    • Shuntaro MachidaHiroyuki EnomotoYoshitaka TadakiTatsuya Nagata
    • Shuntaro MachidaHiroyuki EnomotoYoshitaka TadakiTatsuya Nagata
    • H01L41/08
    • B06B1/0292
    • Disclosed is an improved construction of an ultrasonic transducer, wherein a charge is not easily injected into an insulating film even when the bottom of a membrane comes in contact with a lower electrode, and a manufacturing method thereof without using the wafer laminating technique. The ultrasonic transducer includes a lower electrode; a cavity layer formed on the first electrode; an insulating film covering the cavity layer; and an upper electrode formed on the insulating film, wherein, the cavity layer includes projections formed into an insulating film protruded from the cavity layer. In addition, an opening is formed into the upper electrode, and this upper electrode having the opening formed therein is deposited at a position not being superposed with the projections of the insulating film when seen from the top.
    • 公开了一种超声换能器的改进结构,其中即使膜的底部与下电极接触,电荷也不容易注入到绝缘膜中,并且其制造方法不使用晶片层压技术。 超声波换能器包括下电极; 形成在所述第一电极上的空腔层; 覆盖空腔层的绝缘膜; 以及形成在所述绝缘膜上的上电极,其中,所述空腔层包括形成为从所述空腔层突出的绝缘膜的突起。 此外,在上部电极中形成开口,并且其上形成有开口的该上部电极沉积在从顶部观察时不与绝缘膜的突起重叠的位置。
    • 39. 发明申请
    • Vibration transducer
    • 振动传感器
    • US20090175477A1
    • 2009-07-09
    • US12228589
    • 2008-08-14
    • Yukitoshi SuzukiToshihisa SuzukiKunimasa MuroiTatsuya Nagata
    • Yukitoshi SuzukiToshihisa SuzukiKunimasa MuroiTatsuya Nagata
    • H04R19/04
    • H04R19/04
    • A vibration transducer (e.g. a condenser microphone) having a high sensitivity is constituted of a housing composed of an airtight material having a through-hole, a vibration conversion die (e.g. a microphone die) which is attached to the interior surface of the housing at the prescribed position embracing the through-hole in plan view, and a barrier diaphragm composed of an airtight material whose external periphery is attached to the exterior surface of the housing in an airtight manner oppositely to the prescribed position. The barrier diaphragm has a vibration area which is larger than the sectional area of the through-hole. A space allowing the barrier diaphragm to vibrate is formed between the barrier diaphragm and the exterior surface of the housing, wherein the distance between the barrier diaphragm and the exterior surface of the housing can be gradually reduced from the vibration axis to the external periphery.
    • 具有高灵敏度的振动传感器(例如,电容麦克风)由具有通孔的气密材料,振动转换模具(例如,麦克风模头)组成的壳体构成,该模具连接到壳体的内表面 在平面图中包含通孔的规定位置,以及由外周以与规定位置相反的气密方式附接到壳体的外表面的气密材料构成的阻隔膜。 阻挡隔膜的振动面积大于通孔的截面积。 阻挡隔膜与外壳的外表面之间形成允许隔膜振动的空间,其中阻挡隔膜与壳体外表面之间的距离可以从振动轴逐渐减小到外周。